STF,I,P14NM50N Datasheet by STMicroelectronics

View All Related Products | Download PDF Datasheet
This is information on a product in full production.
June 2014 DocID16832 Rev 7 1/18
18
STF14NM50N, STI14NM50N,
STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP, I²PAK and TO-220 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
123
TO-220FP
123
TO-220
123
I
2
PAK
TAB TAB
$0Y
'7$%
*
6
Order codes V
DS
@
T
Jmax
R
DS(on)
max I
D
STF14NM50N
550 V 0.32 Ω12 A STI14NM50N
STP14NM50N
Table 1. Device summary
Order codes Marking Package Packaging
STF14NM50N
14NM50N
TO-220FP
TubeSTI14NM50N I
2
PAK
STP14NM50N TO-220
www.st.com
Contents STF14NM50N, STI14NM50N, STP14NM50N
2/18 DocID16832 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 TO-220FP, STF14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 I
2
PAK, STI14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-220, STP14NM50N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
é]
DocID16832 Rev 7 3/18
STF14NM50N, STI14NM50N, STP14NM50N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I²PAK, TO-220 TO-220FP
V
DS
Drain-source voltage 500 V
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 12 12
(1)
1. Limited by maximum junction temperature
A
I
D
Drain current (continuous) at T
C
= 100 °C 8 8
(1)
A
I
DM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 48 48
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 90 25 W
dv/dt
(3)
3. I
SD
12 A, di/dt 400 A/s,V
DS
peak V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
2500 V
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
TO-220FP I²PAK TO-220
R
thj-case
Thermal resistance junction-case max 5 1.39 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche data
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max) 4A
E
AS
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50 V) 172 mJ
Electrical characteristics STF14NM50N, STI14NM50N, STP14NM50N
4/18 DocID16832 Rev 7
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 500 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 500 V
V
DS
= 500 V, T
C
=125 °C
1
100
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0) V
GS
= ± 25 V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 6 A 0.28 0.32 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 -
816
60
3
-
pF
pF
pF
C
oss eq. (1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Equivalent output
capacitance V
DS
= 0 to 50 V, V
GS
= 0 - 157 - pF
R
G
Intrinsic gate
resistance f = 1 MHz open drain - 4.5 - Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=400 V, I
D
=12 A,
V
GS
=10 V (see Figure 16)-
27
5
15
-
nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 400 V, I
D
= 12 A,
R
G
=4.7 Ω, V
GS
= 10 V
(see Figure 17)
-
12
16
42
22
-
ns
ns
ns
ns
é]
DocID16832 Rev 7 5/18
STF14NM50N, STI14NM50N, STP14NM50N Electrical characteristics
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed) -12
48
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 12 A, V
GS
= 0 - 1.6 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see Figure 20)-
252
2.8
22
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
J
= 150 °C
(see Figure 20)-
300
3.3
22.2
ns
µC
A
scnmm ‘0" 0.05 Zm = V "mi. 5: ¢,/7 M m S‘NGLE PULSE I, L ‘04 75 4 -3 72 -v IO 10 m m 10 us) 5mm K In" mus 0.02 om ‘04 \SINGLE PULSE v,L Mr3 10" 10’3 m" 10" 100.9(5)
Electrical characteristics STF14NM50N, STI14NM50N, STP14NM50N
6/18 DocID16832 Rev 7
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for I²PAK, TO-220 Figure 3. Thermal impedance for I²PAK, TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM07199v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
AM07201v1
I
D
15
10
5
0010 V
DS
(V)
20
(A)
515
20
25
5V
6V
V
GS
=10V
AM07202v1
I
D
15
10
5
004V
GS
(V)
8
(A)
2610
20
25
V
DS
=18V
AM07203v1
(amass é]
DocID16832 Rev 7 7/18
STF14NM50N, STI14NM50N, STP14NM50N Electrical characteristics
Figure 8. Normalized V
(BR)DSS
vs temperature Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Gate charge vs gate-source voltage
Figure 12. Normalized gate threshold voltage vs
temperature Figure 13. Normalized on-resistance vs
temperature
V
(BR)DSS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
I
D
=1mA
1.08
1.10
AM09028v1
R
DS(on)
0.280
0.275
0.270
0.26504I
D
(A)
(Ohm)
26
0.285
0.290
0.295
0.300 V
GS
=10V
810
12
AM07205v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
AM07206v1
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=400V
I
D
=12A
25
12
300
250
200
0
350
400
V
DS
30
150
100
50
V
DS
(V)
AM07204v1
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
I
D
=250µA
AM07208v1
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
2.1 I
D
=6A
V
GS
=10 V
AM07209v1
Electrical characteristics STF14NM50N, STI14NM50N, STP14NM50N
8/18 DocID16832 Rev 7
Figure 14. Source-drain diode forward
characteristics
V
SD
0.6
0.4
0.2
0
02I
SD
(A)
(V)
1
0.8
5
346
T
J
= -50 °C
T
J
= 150 °C
T
J
= 25 °C
78910 11
1
1.2
1.4
AM15616v1
aw
DocID16832 Rev 7 9/18
STF14NM50N, STI14NM50N, STP14NM50N Test circuits
3 Test circuits
Figure 15. Switching times test circuit for
resistive load Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times Figure 18. Unclamped inductive load test circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STF14NM50N, STI14NM50N, STP14NM50N
10/18 DocID16832 Rev 7
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
L7 L6 .51.. ‘—G L2 L4 L3
DocID16832 Rev 7 11/18
STF14NM50N, STI14NM50N, STP14NM50N Package mechanical data
4.1 TO-220FP, STF14NM50N
Figure 21. TO-220FP drawing
Package mechanical data STF14NM50N, STI14NM50N, STP14NM50N
12/18 DocID16832 Rev 7
Table 9. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
c2 A7 L7 ‘5 7’ L2
DocID16832 Rev 7 13/18
STF14NM50N, STI14NM50N, STP14NM50N Package mechanical data
4.2 I
2
PAK, STI14NM50N
Figure 22. I²PAK (TO-262) drawing
0004982_Rev_H
Package mechanical data STF14NM50N, STI14NM50N, STP14NM50N
14/18 DocID16832 Rev 7
Table 10. I²PAK (TO-262) mechanical data
DIM. mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
E] _._A_« «— E —» 9P F_. <34 0="" l:="" p="" j="" 01="" _="" )p="" q="" g="" l30="" 7:="" li="" «—="" b="" (x3)="">
DocID16832 Rev 7 15/18
STF14NM50N, STI14NM50N, STP14NM50N Package mechanical data
4.3 TO-220, STP14NM50N
Figure 23. TO-220 type A drawing
BW\SH$B5HYB7
Package mechanical data STF14NM50N, STI14NM50N, STP14NM50N
16/18 DocID16832 Rev 7
Table 11. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P3.75 3.85
Q2.65 2.95
é]
DocID16832 Rev 7 17/18
STF14NM50N, STI14NM50N, STP14NM50N Revision history
5 Revision history
Table 12. Document revision history
Date Revision Changes
26-Nov-2009 1 First release.
02-Dec-2009 2 Inserted table footnote Table 3: Thermal data.
22-Jul-2010 3 Document status promoted from preliminary data to datasheet.
06-Apr-2011 4 Updated E
AS
in Table 2.
30-Oct-2012 5
Updated Figure 1: Internal schematic diagram,Table 1: Device
summary, Table 2: Absolute maximum ratings, Table 3: Thermal
data, Table 5: On /off states.
Updated Section 4: Package mechanical data.
Minor text changes.
07-Feb-2013 6
Minor text changes
Added: Figure 14
Updated: Section 4: Package mechanical data only for DPAK
package
05-Jun-2014 7
The root part numbers STB14NM50N and STD14NM50N have
been moved to a separate datasheet
Updated Coss eq. in Table 6: Dynamic
Updated: Section 4.3: TO-220, STP14NM50N
Minor text changes
ny m
STF14NM50N, STI14NM50N, STP14NM50N
18/18 DocID16832 Rev 7
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

Products related to this Datasheet

MOSFET N-CH 500V 12A TO220
Available Quantity: 877
Unit Price: 4.76
MOSFET N-CH 500V 12A TO220FP
Available Quantity: 0
Unit Price: 5.06
MOSFET N CH 500V 12A I2PAK
Available Quantity: 783
Unit Price: 4.22