IRFR5410PbF, IRFU5410PbF Datasheet by Infineon Technologies

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International IGBR Rectitier D@TC D@TC TSTG RWA RwA
IRFR5410PbF
IRFU5410PbF
HEXFET® Power MOSFET
VDSS = -100V
RDS(on) = 0.205
ID = -13A
12/13/04
Parameter Typ. Max. Units
RθJC Junction-to-Case  1.9
RθJA Junction-to-Ambient (PCB mount)**  50 °C/W
RθJA Junction-to-Ambient  110
Thermal Resistance
D-Pak
T
O-252AA I-Pak
TO-251AA
lUltra Low On-Resistance
lP-Channel
lSurface Mount (IRFR5410)
lStraight Lead (IRFU5410)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Description
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.2 A
IDM Pulsed Drain Current -52
PD @TC = 25°C Power Dissipation 66 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy194 mJ
IAR Avalanche Current-8.4 A
EAR Repetitive Avalanche Energy6.3 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD -95314A
www.irf.com 1
lLead-Free
Gale-lo-Source Reverse Leakage Tum-OH Delay Time Input Capamlance Oulpm Capacnance Pu‘sed Source Currem Reverse Recovery Charge ——— 550 970 Internationcd I
IRFR/U5410PbF
2www.irf.com
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode)   showing the
ISM Pulsed Source Current integral reverse
(Body Diode)   p-n junction diode.
VSD Diode Forward Voltage   -1.6 V TJ = 25°C, IS = -7.8A, VGS = 0V
trr Reverse Recovery Time  130 190 ns TJ = 25°C, IF = -8.4A
Qrr Reverse Recovery Charge  650 970 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-13
-52
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
Starting TJ = 25°C, L = 6.4mH
RG = 25, IAS = -7.8A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD -7.8A, di/dt 200A/µs, VDD V
(BR)DSS,
TJ 150°C
Pulse width 300µs; duty cycle 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100   V VGS = 0V, ID = -250µA
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient  -0.12  V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance   0.205 VGS = -10V, ID = -7.8A
VGS(th) Gate Threshold Voltage -2.0  -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.2   S VDS = -50V, ID = -7.8A
  -25 µA VDS = -100V, VGS = 0V
  -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage   100 VGS = 20V
Gate-to-Source Reverse Leakage -100 nA VGS = -20V
QgTotal Gate Charge   58 ID = -8.4A
Qgs Gate-to-Source Charge   8.3 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge   32 VGS = -10V, See Fig. 6 and 13 
td(on) Turn-On Delay Time  15  VDD = 50V
trRise Time  58  ID = -8.4A
td(off) Turn-Off Delay Time 45 RG = 9.1
tfFall Time  46  RD =6.2Ω, See Fig. 10 
Between lead,
  6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 760 VGS = 0V
Coss Output Capacitance 260 pF VDS = -25V
Crss Reverse Transfer Capacitance  170   = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance  
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
S
D
G
Uses IRF9530N data and test conditions.
mcrmmfla‘ I RPecflHe' zous PULS 20us PULSE T C T C
IRFR/U5410PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
45678910
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-14A
mornmmfla I RPecflHe' OR TEST C‘RCUIT
IRFR/U5410PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0
400
800
1200
1600
2000
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
010 20 30 40 50 60
0
5
10
15
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-8.4A
V =-20V
DS
V =-50V
DS
V =-80V
DS
1
10
100
1000
1 10 100 100
0
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
mcrmmfla‘ IEER Pecflhc' (z SWGLE PuLSE om
IRFR/U5410PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
mcrmmfla‘ IEER Recflhc' Starling T ( c amass
IRFR/U5410PbF
6www.irf.com
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
D
S
I
D
I
G
-3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-
+VDD
25 50 75 100 125 150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-3.5A
-4.9A
-7.8A
Internationcd I
IRFR/U5410PbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
Internationcd I
IRFR/U5410PbF
8www.irf.com
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 16, 1999
EXAMPLE: WIT H AS S E MB L Y
THIS IS AN IRFR120
LOT CODE 1234
YEAR 9 = 199
9
DATE CODE
WE EK 16
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
AS S E MBL Y
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CODE
OR
P = DE S IGNAT E S L EAD-FR EE
PRODUCT (OPTIONAL)
Note: "P" in assembly line position
indicates "L ead-F ree"
12 34
WE EK 16
A = AS S E MB L Y S IT E CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
AS S EMB L Y
INTERNATIONAL
RECTIFIER
Internationcd I >91 5mg. ms: nwmanns m: unmm u w: nmiwmv [x'wwis a; w: mm Bow mm W comm: uvmm www mumw M n, n a m m wmswau wcau'mum w u 4 s A wmsmn M 4; mu m w m mu 7 MM conforms m m mm mm 4 WWDWW mm mm W m W4 W W 4 w m m m 4 44 m M m 44.4 m wimzafl E u; 7 W, 7 4 1 J 42 an m m. m 4 L Q m 1:) W, quD : 444434 ., 4 w 4 w WW4 m, H l—Pak (TO-251AA) Part Marking Information wrm ASSEMEU Lorcuuz 5m Assmmn 0N WW 19 um wmussmamwz w Assmau mrcunz msmmm mum was ASSEMELV muons www.irf.com 1n man 5m Mm EXCEED m ASSCMMENVS Hum ,, w: 27 Draw :7 mm 4, Wm
IRFR/U5410PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
ASS E MBLY
EXAMPLE: WITH ASSEMBLY
THIS IS AN IRFU120
YEAR 9 = 199
9
DAT E CODE
LINE A
WEEK 19
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
LOT CODE 5678
PART NUMBER
56
IRFU120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assembly line
pos iti on indicates "Lead-F ree"
OR
56 78
ASSEMBLY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
IRFU120
PART NUMBER
WEEK 19
DATE CODE
YEAR 9 = 1999
A = ASSEMBLY SITE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
/\ 7\ \77 \/ Internationoi I
IRFR/U5410PbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641
)
15.7 ( .619
)
TRR TRL
N
OTES :
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
http://www.irf.com/package/
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
IMPORTANT NOTICE The iniormation given in this document shall in no event he regarded as a guarantee or conditions or characteristics (“Beschaffenheitsgarantie”l. With respect to any examples, hints or any typical values stated herein and/or any intormation regarding the application of the product, lnlineon Technologies hereoy disclaims any and all warranties and liaoiities of any klnd, including without limitation warranties of nonclrlfrlrlgemerll orintellectual propeny rights otanythird party In addition, any inlormation given in thisdocument is subject to customers compliance with its abligallans stated in this document and any applicable legal requirements, norms and standardsconcerning customer's products and any use ol the product of lnhneon Technologies in customer'sapplications. The data contained in this document is exclusively intended tor technically trained statt It is the responsibility or customers technical departments to evaluate the suitaoility of the product tor the intended application and the completeness or the product inlormation given in this document with respect to such application Fortunher intormationonthe product, technology, delivery terms and conditions and prices please conta our nearest Infineon Technologies ortice lwww nfineon.coml. Due to technical requirements products may contain dangerous substances. For intormation on the types in question please contact your nearest lntineonTechnologiesoitice. Except as otherWise explicitly approved by lniineon Technologies in a written document signed by authorized representatives of lniineon Technologies, lniineon Technologies' products may not he used in any applications where a failure oi the product or any consequences of the use thereot can reasonably be expected to result in personal inyury
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (Beschaffenheitsgarantie) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customers compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customers products and any
use of the product of Infineon Technologies in
customers applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customers technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.

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