T3035H,3050H Datasheet by STMicroelectronics

’l hieaugmented TO-ZZOAB Ins. TOVZZOAB DzPAK
January 2017
DocID17029 Rev 6
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This is information on a product in full production.
www.st.com
T3035H, T3050H
30 A high temperature Snubberless™ Triacs
Datasheet - production data
Features
High current Triac
High immunity level
Low thermal resistance with clip bonding
Very high 3 quadrant commutation at 150 °C
capability
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
Applications
Thanks to its high electrical noise immunity level
and its strong current robustness, the T3035H,
T3050H series is designed for the control of AC
actuators in appliances and industrial systems.
Description
Specifically designed to operate at 150 °C, the
30 A T3035H, T3050H Triacs provide very high
dynamic and enhanced performance in terms of
power loss and thermal dissipation. This allows
the heatsink size optimization, leading to space
and cost effectiveness when compared to
electro-mechanical solutions.
Based on ST Snubberless™ technology, they
offer a specified minimal commutation and high
noise immunity levels valid up to the Tj max.
These devices safely optimize the control of
universal motors and of inductive loads found in
power tools and major appliances.
By using an internal ceramic pad, they provide
voltage insulation (rated at 2500 VRMS).
Table 1: Device summary
Symbol
Unit
IT(RMS)
30
A
VDRM/VRRM
600
V
IGT
35 or 50
mA
Characteristics
T3035H, T3050H
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1 Characteristics
Table 2: Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(full sine wave)
D²PAK,
TO-220AB
TC = 121 °C
30
A
TO-220AB Ins.
TC = 92 °C
ITSM
Non repetitive surge peak on-
state current
(full cycle, Tj initial = 25 °C)
f = 50 Hz
tp = 20 ms
270
A
f = 60 Hz
tp = 16.7 ms
284
I²t
I²t value for fusing
tp = 10 ms
487
A²s
dl/dt
Critical rate of rise of on-state
current
IG = 2 x IGT , tr ≤ 100 ns
f = 120 Hz
Tj = 150 °C
50
A/µs
VDSM /
VRSM
Non repetitive surge peak
off-state voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM +
100
V
IGM
Peak forward gate current
tp = 20 µs
Tj = 150 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
Unit
T3035H
T3050H
IGT(1)
VD = 12 V, RL = 33 Ω
I - II - III
Max.
35
50
mA
VGT
Max.
1.0
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 150 °C
I - II - III
Min.
0.15
V
IH
IT = 500 mA
Max.
60
75
mA
IL
IG = 1.2 x IGT
I - III
Max.
75
90
mA
II
90
110
dV/dt(2)
VD = 2/3 x VDRM, gate open
Tj = 150 °C
Min.
1000
1500
V/µs
(dI/dt)c(2)
Without snubber
Tj = 150 °C
Min.
33
44
A/ms
Notes:
(1)minimum IGT is guaranteed at 20% of IGT max.
(2)for both polarities of A2 referenced to A1.
T3035H, T3050H
Characteristics
DocID17029 Rev 6
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Table 4: Static characteristics
Symbol
Test conditions
Value
Unit
VTM(1)
ITM = 42 A, tp = 380 μs
Tj = 25 °C
Max.
1.55
V
VTO(1)
Threshold voltage
Tj = 150 °C
Max.
0.80
V
Rd(1)
Dynamic resistance
Tj = 150 °C
Max.
15
mΩ
IDRM / IRRM
VDRM = VRRM
Tj = 25 °C
Max.
10
µA
Tj = 150 °C
Max.
8.5
mA
VD/VR = 400 V (at peak mains voltage)
Tj = 150 °C
Max.
7
VD/VR = 200 V (at peak mains voltage)
Tj = 150 °C
Max.
5.5
Notes:
(1)for both polarities of A2 referenced to A1
Table 5: Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
D²PAK,
TO-220AB
0.8
°C/W
TO-220AB Ins.
1.6
Rth(j-a)
Junction to ambient (Scu = 1 cm2)
D²PAK
45
Junction to ambient
TO-220AB,
TO-220AB Ins.
60
5 \GT‘ var In] / \GT, vm U, : 25 "0] mm” vamc ‘3 20 ‘5 m vmuuazos "' us 750 ,25 n 29 5:: 75 mo <25><50>
Characteristics
T3035H, T3050H
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DocID17029 Rev 6
1.1 Characteristics (curves)
Figure 1: Maximum power dissipation versus
on-state RMS current
Figure 2: On-state RMS current versus case
temperature
Figure 3: On-state RMS current versus ambient
temperature (free air convection)
Figure 4: Variation of thermal impedance versus
pulse duration
Figure 5: Relative variation of gate trigger current
and gate trigger voltage versus junction
temperature
Figure 6: Relative variation of holding current and
latching current versus junction temperature
(typical value)
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
P(W)
I (A)
T(RMS)
0
5
10
15
20
25
30
35
100 125 150
Tc(°C)
TO-220AB- ins
TO-220AB, D²PAK
25 50 75
0
IT(RMS)(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Ta(°C)
-50 -25 75 100 125 150
0 25 50
IT(RMS)(A)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
tP(s)
K=[Zth /Rth]
Zth(j-a)
Zth(j-c)
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
T(°C)
j
IH
IL
IH, IL[Tj] / IH, IL[Tj= 25 °C]
E] \ (A) mono TSM mm mm" 5am; . mum : moo mu m urns) um um mm mm: \ A 1mm TM( } mu m
T3035H, T3050H
Characteristics
DocID17029 Rev 6
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Figure 7: Surge peak on-state current versus
number of cycles
Figure 8: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 9: On state characteristics
(maximum values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 11: Relative variation of static dV/dt
immunity versus junction temperature
Figure 12: Relative variation of leakage current
versus junction temperature for different values of
blocking voltage
0
50
100
150
200
250
1 10 100 1000
One cy cle
t = 20 ms
Number of cycles
Non repetitive
T initial = 25 °C
j
Repetitive
T = 121 °C
C
ITSM(A)
0
1
2
3
4
5
6
7
8
9
10
11
25 50 75 100 125 150
T(°C)
j
(dI/dt)c[T ]/(dI/dt)c [T = 150 °C]
j j
0
1
2
3
4
5
6
7
8
9
10
11
25 50 75 100 125 150
dV/dt[T ]/dV/dt[T = 150 °C]
j j
V = V = 400 V
D R
T(°C)
j
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
T(°C)
j
I /I [T ;V /V ]/I /I
DRM RRM j DRM RRM DRM RRM
[T = 150 °C; 600 V]
j
V = V = 200 V
DRM RRM
V = V = 400 V
DRM RRM
V = V = 600 V
DRM RRM
th 'C/W m « a( ) an Vm=Vw so VDW = VW = Ann v 40 :m _VDW=VRRWHQJV 29 m Tare) v ‘ . zn 40 an an mu 120 «an
Characteristics
T3035H, T3050H
6/12
DocID17029 Rev 6
Figure 13: Thermal resistance junction to ambient
versus copper surface under tab
Figure 14: Acceptable junction to ambient thermal
resistance versus repetitive peak off-state voltage
and ambient temperature
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
SCu(cm²)
Rth(j-a) (°C/W)
Epoxy printed board FR4, eCU= 35 µm
E] o 5 max 7 1 Dmlusmn ' E 7 7 j E m Dz R L. .7 :mm mm mums v1 \ / (Ufiesm yam Dosman answer! m an: uHhe \wo Dosmans or m the Symmemna‘ apvasues
T3035H, T3050H
Package information
DocID17029 Rev 6
7/12
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Epoxy meets UL94, V0
Lead-free package leads
Cooling method: by conduction (C)
2.1 D²PAK package information
Figure 15: D²PAK package outline
8.90 16.90
Package information
T3035H, T3050H
8/12
DocID17029 Rev 6
Table 6: D²PAK package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.1693
0.1811
A1
2.49
2.69
0.0980
0.1059
A2
0.03
0.23
0.0012
0.0091
B
0.70
0.93
0.0276
0.0366
B2
1.25
1.40
0.0492
0.0551
C
0.45
0.60
0.0177
0.0236
C2
1.21
1.36
0.0476
0.0535
D
8.95
9.35
0.3524
0.3681
D1
7.50
8.00
0.2953
0.3150
D2
1.30
1.70
0.0512
0.0669
E
10.00
10.28
0.3937
0.4047
E1
8.30
8.70
0.3268
0.3425
E2
6.85
7.25
0.2697
0.2854
G
4.88
5.28
0.1921
0.2079
L
15
15.85
0.5906
0.6240
L2
1.27
1.40
0.0500
0.0551
L3
1.40
1.75
0.0551
0.0689
R
0.40
0.0157
V2
Notes:
(1)Dimensions in inches are given for reference only
Figure 16: D²PAK recommended footprint (dimensions are in mm)
E] B b2 Resm gale 0.5 mm I max. protuswon“) ‘ . IL ,,,,,,, +,. WW 1 == A I4 I3 \ 1 1 a1 1 1 1 I2 1 1 32 1 1 1 1 1 ,7 b1 Resm ale 0.5 mm 4—. max. protuswon“) u )Resm gate posmun accemed m une of the Mo pusmuns or m we symmemca1 oppusfles c2 C1
T3035H, T3050H
Package information
DocID17029 Rev 6
9/12
2.2 TO-220AB (NIns. and Ins.) package information
Figure 17: TO-220AB (NIns. and Ins.) package outline
Package information
T3035H, T3050H
10/12
DocID17029 Rev 6
Table 7: TO-220AB (NIns. and Ins.) package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
15.20
15.90
0.5984
0.6260
a1
3.75
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
0.0520
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
0.0669
I4
15.80
16.40
16.80
0.6220
0.6457
0.6614
M
2.6
0.1024
Notes:
(1)Inch dimensions are for reference only.
T3035H, T3050H
Ordering information
DocID17029 Rev 6
11/12
3 Ordering information
Figure 18: Ordering information scheme
Table 8: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T3035H-6G
T3035H-6G
D²PAK
1.5 g
50
Tube
T3035H-6G-TR
T3035H-6G
1000
Tape and reel 13"
T3035H-6I
T3035H-6I
TO-220AB Ins.
2.3 g
50
Tube
T3035H-6T
T3035H-6T
TO-220AB
2.3 g
50
Tube
T3050H-6G
T3050H-6G
D²PAK
1.5 g
50
Tube
T3050H-6G-TR
T3050H-6G
1000
Tape and reel 13"
T3050H-6T
T3050H-6T
TO-220AB
2.3 g
50
Tube
4 Revision history
Table 9: Document revision history
Date
Revision
Changes
28-Jan-2010
1
Initial release.
17-May-2010
2
Updated maximum Tj in Table 2.
14-Dec-2010
3
Updated IGT in Table 1.
20-Sep-2011
4
Updated: Features.
21-Jul-2015
5
Update Table 2 and reformatted to current standard.
20-Jan-2017
6
D²PAK package added.
T 30 xx H - 6 y - TR
Triac series
Current
Sensitivity
Package
30 = 30 A
35 = 35 mA
50 = 50 mA
High temperature
Voltage
Delivery mode
6 = 600 V
T = TO-220AB
I =TO-220AB insulated
G = D²PAK
Blank = tube (TO-220AB, TO-220AB ins)
-TR = Tape and reel (PAK)
T3035H, T3050H
12/12
DocID17029 Rev 6
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