IP(B,I,P)05CN10N G Datasheet by Infineon Technologies

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(ifineon/ RoHS / <® halogen‘free="" (9mm="" $/="" ,//="" 2.="" dram="" pm="" 2="" gate="" pm="" 1="" source="" pm="" 3="">
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
"%&$!"#2 Power-Transistor
Features
R( 492 ??6=?@ C>2 ==6G6=
R I46==6?E82 E6492 C86IR;I"\[#AC@ 5F4E!) '
R/6CJ=@ H@ ?C6D:DE2 ?46R;I"\[#
R   U @ A6C2 E:?8E6>A6C2 EFC6
R*3 7C66=62 5A=2 E:?8, @ # -4@ >A=:2 ?E
R+ F2 =:7:652 44@ C5:?8E@ % )#7@ CE2 C86E2 AA=:42 E:@ ?
R$562 =7@ C9:897C6BF6?4JDH:E49:?82 ?5DJ?49C@ ?@ FDC64E:7:42 E:@ ?
R# 2 =@ 86?7C662 44@ C5:?8E@ $       
Maximum ratings, 2 ETW   U F?=6DD@ E96CH:D6DA64:7:65
Parameter Symbol Conditions Unit
@ ?E:?F@ FD5C2 :?4FCC6?E I;T9   U *# )(( 7
T9    U )((
*F=D655C2 :?4FCC6?E
+# I;$]bY`R T9   U ,((
G2 =2 ?4966?6C8JD:?8=6AF=D6 E7I I;     R>I   "0*. ZA
, 6G6CD65:@ 565v'QtQv'Qt
I;     V;I   /
Qi'Qt     W D
TW$ZNe    U
. XK's`
" 2 E6D@ FC46G@ =E2 86,# V>I r*( K
*@ H6C5:DD:A2 E:@ ? Pa\a T9   U +(( L
) A6C2 E:?82 ?5DE@ C2 86E6>A6C2 EFC6 TWT`aT      U
$ 4=:>2 E:442 E68@ CJ $( $          
Value
V;I )(( K
R - @ ?>2 I.)    -&) Z"
I;)(( 7
Product Summary
Type $*    (   ( " $*$   (   ( " $**   (   ( "
Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+
Marking (-9D)(D (-9D)(D (-9D)(D
, 6G  A2 86        
./ Infineon
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
.96C>2 =C6D:DE2 ?46;F?4E:@ ?42 D6 RaUA9 % % (&- B'L
.96C>2 =C6D:DE2 ?46 RaUA7 >:?:>2 =7@ @ EAC:?E  
;F?4E:@ ?2 >3 :6?E  4>*4@ @ =:?82 C62 -# % % ,(
Electrical characteristics, 2 ETW   U F?=6DD@ E96CH:D6DA64:7:65
Static characteristics
C2 :?D@ FC463 C62 <5@ H?G@ =E2 86 V"8H#;II V>I  / I;  > )(( % % K
" 2 E6E9C6D9@ =5G@ =E2 86 V>I"aU# V;I5V>II;    W *+,
16C@ 82 E6G@ =E2 865C2 :?4FCC6?E I;II
V;I   / V>I  /
TW   U % (&) ) s7
V;I   / V>I  /
TW    U % )( )((
" 2 E6D@ FC46=62 <2 864FCC6?E I>II V>I   / V;I  / % ) )(( [7
C2 :?D@ FC46@ ?DE2 E6C6D:DE2 ?46 R;I"\[#
V>I   / I;     
.)    .)    % ,&) -&, Z"
V>I   / I;     
JE*.+ % +&0 -&)
" 2 E6C6D:DE2 ?46 R>% )&0 % "
J_N[`P\[QbPaN[PR gS`
hV;Ih6*hI;hR;I"\[#ZNe
I;     0) ).* % I
)#% - .   2 ?5% -  
-# 6G:46@ ?  >>I  >>I  >>6A@ IJ* !,  H:E9 4>
*@ ?6=2 J6C  W >E9:4<4@ AA6C2 C62 7@ C5C2 :?
4@ ??64E:@ ?* :DG6CE:42 =:?DE:==2 :C
Values
,#.WZNe    U 2 ?55FEJ4J4=6    7@ C/T`4%-K
*# FCC6?E:D=:>:E653 J3 @ ?5H:C6H:E92 ?RaUA9   & 0 E9649:A:D2 3 =6E@ 42 CCJ   
+#- 667:8FC6
, 6G  A2 86        
./ Infineon
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
$?AFE42 A2 4:E2 ?46 CV`` % 1(-( )*((( ]=
) FEAFE42 A2 4:E2 ?46 C\`` % )+/( )0*(
, 6G6CD6EC2 ?D76C42 A2 4:E2 ?46 C_`` % /- ))*
.FC?@ ?56=2 JE:>6 tQ"\[# % *0 ,* [`
, :D6E:>6 t_% ,* .+
.FC?@ 7756=2 JE:>6 tQ"\SS# % ., 1.
!2 ==E:>6 tS% *) +)
" 2 E6 92 C
T
6 92 C2 4E6C:DE:4D
.#
" 2 E6E@ D@ FC46492 C86 QT` % ,. .) [9
" 2 E6E@ 5C2 :?492 C86 QTQ % +* ,0
-H:E49:?8492 C86 Q`d % -) /+
" 2 E6492 C86E@ E2 = QT% )+. )0)
" 2 E6A=2 E62 FG@ =E2 86 V]YNaRNb % -&) % K
) FEAFE492 C86 Q\`` V;;   /V>I  / % ),- )1+ [9
Reverse Diode
:@ 564@ ?E:?@ FD7@ CH2 C54FCC6?E II% % )(( 7
:@ 56AF=D64FCC6?E II$]bY`R % % ,((
:@ 567@ CH2 C5G@ =E2 86 VI;
V>I  /I=     
TW   U % )&( )&* K
, 6G6CD6C64@ G6CJE:>6 t__ % ))( [`
, 6G6CD6C64@ G6CJ492 C86 Q__ % +.( % [9
.#- 667:8FC6  7@ C82 E6492 C86A2 C2 >6E6C567:?:E:@ ?
VH   / I=5II
Qi='Qt     W D
T9   U
Values
V>I  /V;I   / 
f  ' # K
V;;   / V>I   /
I;    R>   "
V;;   / I;     
V>I  E@   /
, 6G  A2 86        
@neon
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
1 Power dissipation 2 Drain current
Pa\a5S"T9#I;5S"T9V>I"  /
3 Safe operating area 4 Max. transient thermal impedance
I;5S"V;IT9   U D5( ZaUA95S"t]#
A2 C2 >6E6Ct]A2 C2 >6E6CD5t]'T
 W D
  W D
   W D
 >D
  >D
;9
103
102
101
100
10-1
103
102
101
100
VDS [V]
ID[A]
=:>:E653 J@ ?DE2 E6
_R`V`aN[PR
D:?8=6AF=D6
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
120
0 50 100 150 200
TC[°C]
ID[A]
, 6G  A2 86        
0/. Inflneon
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I;5S"V;ITW   U R;I"\[#5S"I;TW   U
A2 C2 >6E6CV>I A2 C2 >6E6CV>I
7 Typ. transfer characteristics 8 Typ. forward transconductance
I;5S"V>ILV;Ih6*hI;hR;I"\[#ZNe gS`5S"I;TW   U
A2 C2 >6E6CTW
  /
 /   /
 /
  /
0
3
6
9
12
15
0 50 100 150
ID[A]
RDS(on) [m ]
  U
   U
0
50
100
150
200
250
300
0 2 4 6 8
VGS [V]
ID[A]
0
40
80
120
160
200
0 50 100 150
ID[A]
gfs [S]
  /
 /
  /
 /
  /
 /
 /
  /
0
80
160
240
320
400
012345
VDS [V]
ID[A]
, 6G  A2 86        
\ W E
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R;I"\[#5S"TWI;     V>I   / V>I"aU#5S"TWV>I5V;I
A2 C2 >6E6CI;
11 Typ. capacitances 12 Forward characteristics of reverse diode
C5S"V;IV>I  /f  ' # K I=5S"VI;#
A2 C2 >6E6CTW
af]
  
0
2
4
6
8
10
12
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
   W 
    W
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
9V``
9\``
9_``
105
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
  U
   U
  U   
  U   
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF[A]
, 6G  A2 86        
/
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
13 Avalanche characteristics 14 Typ. gate charge
I7I5S"t7KR>I   "V>I5S"QTNaRI;     AF=D65
A2 C2 >6E6CTW"`aN_a# A2 C2 >6E6CV;;
15 Drain-source breakdown voltage 16 Gate charge waveforms
V8H";II#5S"TWI;  >
  /
  /
  /
0
2
4
6
8
10
12
0 50 100 150
Qgate [nC]
VGS [V]
90
95
100
105
110
115
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
>I
Q
gate
V
T `"aU#
Q
T"aU#
Q
T `
Q
T Q
Q
`d
Q
g
  U
   U
   U
1
10
100
1000
1 10 100 1000
tAV [µs]
IAS [A]
, 6G  A2 86        
I am ulLLIuE'lERs mans: MIN MAX Mm qu nocuMEm no. A 4.30 A57 0.199 0131) 22mm Al 1 1 7 1 40 um o as A2 2.15 2 72 0.085 01 w sum: 0 l1 0.65 0.513 0.17213 mm m a 95 1 m 0 m7 a D55 25 1.2 u 95 1 15 o w o 045 m a as 1 15 o 02: am 0 25 c 0.33 0.50 12.01: 11924 5m 1: 11 a1 1535 0.58:1 mm 91 3,51 9.15 0.335 0 :72 EUROPEAN 12129.1:ch m 1 a 1 g 13 10 0 A30 om : sun was 11.332 1) ms E1 551: 5.50 0.256 D m /, )1 e 2 54 n.1nu Ly e1 5 0: 0.21111 " 3 3 ISSUE an: m 5.5) s 90 0.232 0272 23mm, L man man c1512 c1551 L1 - LED - 01 as mm" up am 3.59 0.112 11153 "5 a 2.130 mo n.1u2 om
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
PG-TO220-3: Outline
, 6G  A2 86        
@neon E :V E a: «U LRLNCL l mu NIHIUF'FRS mcurs mm: l0262 MIN MAX MIN MAX A 2,300 2,572 0:59 0:00 M 2.150 2.11: 0.00:. 0.401 a 0.050 0,004 0,020 0,034 by 0.950 1.093 0.037 0.04:: ' 02 0.92.0 mm 0.031 0,055 as 0.050 mm 0.020 0,044 ,mm c 0.330 am 00- a 0,021 ‘V ""C mm °'°‘6 °'°°° EUROPEAN =Ro£cnoN D 0,500 0:50 0,315 0,377 m 5.900 . 0.272 . E 0.100 10.35: 0,352 0400 L‘ 0.500 5.000 0.750 0.310 a 2.5m 0,100 a 5.003 9.200 ssul. DA [L N 3 3 05405-2000 I 11.00:: “.000 0.5-2 0.551 LI - 4,000 . n Lt L2 - I .177 . tom;
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
PG-TO262-3-1 (I²PAK)
, 6G  A2 86        
Inflneon I F1 FOOTPRINT F2 R i i m wwmnm mass M 1» MAX MIN MAX A 4.300 9.512 was 0.150 A1 9 Dow 9254 mm 9.010 b 9 BED o 359 D 92s a 933 asrzazucs n2 9 95a 1.321 mm 9.952 mm mass 9 n 33D 9.559 mm 9.925 a 9 nu 1430 u ms 995 sen: 0* n s 509 9.9512 H.335 9.372 m 7 Ion - mu - E 9 son 10 312 mm 12.406 0 5, E1 6 son ms 1 § e 2 Sam 0 mo .1 mm 02m) "5'“ N 2 2 E mcpam momma» H 14.605 15 975 H575 12.92; L 2.2m 3.0m) mm 12.1 19 L1 . 1 5m . n as: /1 L2 1 Don 1m was 0.070 “\1 r1 15.950 16 25a mg 0.640 r2 9 30B 9 5m u ass a an 13:11: nus r: 9.500 4.7m) um 12.135 12-m-2n06 r4 1mm 19 my H.421 9.929 F5 3 Ban mo ms 12.151 FILE Fs 1.100 1.300 ms 9.951 70453}
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
PG-TO-263 (D²-Pak)
, 6G  A2 86         
Infineon Published by Infineon Tochnolorles AG 81728 Munich. Germany 32008 Inmecn Technologies AG All Rum: Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabil'nies of any kind. including without limitation, warranties of non- intringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (wwinfineoncom). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fall, it is reasonable to assume that the health of the user or other persons may be endangered.
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