MOC3010-12M, MOC3020-23M Datasheet by onsemi

@b 0N Semiconductor® www.0nseml.com
© Semiconductor Components Industries, LLC, 2018
May, 2018 Rev. 1
1Publication Order Number:
MOC3023M/D
MOC3010M, MOC3011M,
MOC3012M, MOC3020M,
MOC3021M, MOC3022M,
MOC3023M
6-Pin DIP Random-Phase
Triac Driver Output
Optocoupler
(250/400 V Peak)
Description
The MOC301XM and MOC302XM series are optically isolated
triac driver devices. These devices contain a GaAs infrared emitting
diode and a light activated silicon bilateral switch, which functions
like a triac. They are designed for interfacing between electronic
controls and power triacs to control resistive and inductive loads for
115 VAC operations.
Features
Excellent IFT Stability IR Emitting Diode Has Low Degradation
Peak Blocking Voltage
250 V, MOC301XM
400 V, MOC302XM
Safety and Regulatory Approvals
UL1577, 4,170 VACRMS for 1 Minute
DIN EN/IEC6074755
These are PbFree Devices
Applications
Industrial Controls
Solenoid/Valve Controls
Traffic Lights
Static AC Power Switch
Vending Machines
Incandescent Lamp Dimmers
Solid State Relay
Motor Control
Lamp Ballasts
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PDIP6 8.51x6.35, 2.54P
CASE 646BZ
See detailed ordering and shipping information on page 8 of
this data sheet.
ORDERING INFORMATION
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BX
Figure 1. Schematic
MAIN TERM.
NC*
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
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SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For
Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 40/85/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR InputtoOutput Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC 1275 Vpeak
InputtoOutput Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable OverVoltage 6000 Vpeak
External Creepage 7mm
External Clearance 7mm
External Clearance (for Option TV, 0.4” Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
RIO Insulation Resistance at TS, VIO = 500 V > 109W
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ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol Parameters Device Value Unit
Total Device
TSTG Storage Temperature All 40 to 150 °C
TOPR Operating Temperature All 40 to 85 °C
TJJunction Temperature Range All 40 to 100 °C
TSOL Lead Solder Temperature All 260 for 10 seconds °C
PD
Total Device Power Dissipation at 25°C Ambient All 330 mW
Derate Above 25°C 4.4 mW/°C
Emitter
IFContinuous Forward Current All 60 mA
VRReverse Voltage All 3 V
PD
Total Power Dissipation at 25°C Ambient All 100 mW
Derate Above 25°C 1.33 mW/°C
Detector
VDRM OffState Output Terminal Voltage MOC3010M, MOC3011M,
MOC3012M
250 V
MOC3020M, MOC3021M,
MOC3022M, MOC3023M 400
ITSM Peak Repetitive Surge Current (PW = 100 ms, 120 pps) All 1 A
PD
Total Power Dissipation at 25°C Ambient All 300 mW
Derate Above 25°C 4 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
Emitter
VFInput Forward Voltage IF = 10 mA All 1.15 1.50 V
IRReverse Leakage Current VR = 3 V, TA = 25°C All 0.01 100 mA
Detector
IDRM Peak Blocking Current, Either Direction Rated VDRM, IF = 0(1) All 10 100 nA
VTM Peak OnState Voltage, Either Direction ITM = 100 mA peak, IF = 0 All 1.8 3.0 V
1. Test voltage must be applied within dv/dt rating.
TRANSFER CHARACTERISTICS
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
IFT LED Trigger Current Voltage = 3 V(2) MOC3020M 30 mA
MOC3010M 15
MOC3021M
MOC3011M 10
MOC3022M
MOC3012M 5
MOC3023M
IHHolding Current, Either Direction All 100 mA
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT
. Therefore, recommended operating IF lies between max
IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M, 5 mA for MOC3012M and
MOC3023M) and absolute maximum IF (60 mA).
ISOLATION CHARACTERISTICS
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
VISO Isolation Voltage (3) t = 1 Minute All 4170 VACRMS
3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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TYPICAL PERFORMANCE CURVES
Figure 2. LED Forward Voltage vs. Forward
Current
Figure 3. OnState Characteristics
Figure 4. Trigger Current vs. Ambient
Temperature
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
Figure 6. dv/dt vs. Temperature Figure 7. Leakage Current, IDRM vs.
Temperature
IF LED FORWARD CURRENT (mA)
1 10 100
VF FORWARD VOLTAGE (V)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 55
oC
TA = 25oC
TA = 100oC
VTM ONSTATE VOLTAGE (V)
3210123
ITM ONSTATE CURRENT (mA)
800
600
400
200
0
200
400
600
800
AMBIENT TEMPERATURE T
A (oC)
40 20020406080100
ITM TRIGGER CURRENT (NORMALIZED)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
NORMALIZED TO T
A = 25_CPWin LED TRIGGER WIDTH (
ms)
1 2 5 10 20 50 100
IFT TRIGGER CURRENT (NORMALIZED)
0
5
10
15
20
25
NORMALIZED TO:
PWin 100 ms
TA AMBIENT TEMPERATURE (oC)
25 30 40 6050 70 80 90 100
STATIC dv/dt (V/ms)
0
2
4
6
8
10
12
STATIC dv/dt
CIRCUIT IN FIGURE 8
TA AMBIENT TEMPERATURE (oC)
40 20020406080100
IDRM LEAKAGE CURRENT (nA)
0.1
1
10
100
1000
10000
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Figure 8. Static dv/dt Test Circuit
Note:
This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.
Vdc
400 V (MOC302X)
250 V (MOC301X)
R = 10 kW
CTEST
PROBE
PULSE
INPUT MERCURY
WETTED
RELAY
RTEST
DUT
252 V (MOC302X)
158 V (MOC301X)
0 VOLTS
APPLIED VOLTAGE
WAVEFORM
Vmax =
dv/dt = 0.63 Vmax = 252
RC
RC RC
400 V (MOC302X)
= 250 V (MOC301X)
(MOC302X)
=158
RC (MOC301X)
3. The worstcase condition for static dv/dt is established
by triggering the DUT with a normal LED input current,
then removing the current. The variable RTEST allows
the dv/dt to be gradually increased until the DUT
continues to trigger in response to the applied voltage
pulse, even after the LED current has been removed.
The dv/dt is then decreased until the DUT stops
triggering. RC is measured at this point and recorded.
X100
SCOPE
1. The mercury wetted relay provides a high speed
repeated pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
t
Figure 9. Resistive Load
VCC
Rin 1
2
3
6
5
4
120 V
60 Hz
180 W
RL
MOC3010M
MOC3011M
MOC3012M
Figure 10. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
VCC
Rin 1
2
3
6
5
4
0.1 mF
180 W
C1
2.4 kW
ZL
MOC3010M
MOC3011M
MOC3012M
120 V
60 Hz
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Figure 11. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
VCC
Rin 1
2
3
6
5
4
0.2 mF
180 W
C1
1.2 kW
ZL
MOC3010M
MOC3011M
MOC3012M
120 V
60 Hz
Figure 12. Typical Application Circuit
VCC
Rin 1
2
3
6
5
4
0.05 mF
0.01 mF
LOAD
360 W
39
470 W
HOT
GROUND
MOC3020M
MOC3021M
MOC3022M
MOC3023M 240 VAC
In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.
The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac, and the 470 W resistor and 0.05 mF
capacitor are for snubbing the coupler. These components may or may not be necessary depending upon
the particular and load used.
Reflow Profile
Figure 13. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
_C
Time (s)
0 60 180120 270
260_C
>245_C = 42 s
_C = 90 s
360
1.822_C/s Rampup Rate
33 s
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ORDERING INFORMATION
Part Number Package Shipping
MOC3010M DIP 6Pin 50 Units / Tube
MOC3010SM SMT 6Pin (Lead Bend) 50 Units / Tube
MOC3010SR2M SMT 6Pin (Lead Bend) 1000 Units / Tape & Reel
MOC3010VM DIP 6Pin, DIN EN/IEC6074755 Option 50 Units / Tube
MOC3010SVM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option 50 Units / Tube
MOC3010SR2VM SMT 6Pin (Lead Bend), DIN EN/IEC6074755 Option 1000 Units / Tape & Reel
MOC3010TVM DIP 6Pin, 0.4” Lead Spacing, DIN EN/IEC6074755 Option 50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3023M product families.
MARKING INFORMATION
Figure 14. Top Marking
MOC3010
1
2
6
43 5
V X YY Q
ON
Top Mark Definitions
1ON Semiconductor Logo
2Device Number
3DIN EN/IEC6074755 Option (only appears on component ordered with this option)
4OneDigit Year Code, e.g., ‘5’
5TwoDigit Work Week, Ranging from ‘01’ to ‘53’
6Assembly Package Code
0N Semiwndudw" m 8.89 8.138.851 FII 7.62 (TYP) 6 60 6.106.60 P|N1 U5 * 0.25-0.36 A g 44 E "9' NOTES: i I 3’ g I ‘ A) NO STANDARD APPLIES TO THIS PACKAGE. (’1 g I B) ALL DIMENSIONS ARE IN MILLIMETERS. ‘ C) DIMENSIONS ARE EXCLUSIVE OE BURRS‘ 038 (MN) I ; MOLD FLASH, AND TIE BAR EXTRUSION 7 m I
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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PDIP6 8.51x6.35, 2.54P
CASE 646BY
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DATE 15 JUL 2019
A
B
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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