T8T Datasheet by STMicroelectronics

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This is information on a product in full production.
October 2013 DocID16192 Rev 4 1/8
T8T
Snubberless, logic level and standard 8 A Triacs
Datasheet - production data
Table 1. Device summary
Features
Medium current Triac
High static and dynamic commutation
Low thermal resistance with clip bonding
Packages is RoHS (2002/95/EC) compliant
600 V VRM
UL certified (ref. file E81734)
Applications
Value sensitive application
General purpose ac line load switching
Motor control circuits in power tools
Small home appliances, lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole, the T8T series of Triacs
can be used as on/off or phase angle control
function in general purpose ac switching where
high commutation capability is required.
This series can be designed in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
Part number Symbol Value
T810T-6I IGT 3Q
logic level 10 mA
T820T-6I
T835T-6I
IGT 3Q
Snubberless 20 / 35 mA
T825T-6I IGT 4Q
standard 25 mA
A2
G
A1
G
A2
A1
TO-220AB insulated
(T8xxT-6I)
www.st.com
Characteristics T8T
2/8 DocID16192 Rev 4
1 Characteristics
Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
IT(RMS) On-state rms current (full sine wave) Tc = 97 °C 8 A
ITSM Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
F = 50 Hz tp = 20 ms 60 A
F = 60 Hz tp = 16.7 ms 63
I²tI
²t Value for fusing tp = 10 ms 26 A²s
dI/dt Critical rate of rise of on-state current IG = 2 x IGT
tr 100 ns F = 60 Hz Tj = 125 °C 50 A/µs
VDSM,
VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM, VRRM
+ 100 V
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
TjOperating junction temperature range - 40 to + 125 °C
DocID16192 Rev 4 3/8
T8T Characteristics
8
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant T8xxT Unit
T810T T820T T825T T835T
IGT (1) VD = 12 V, RL = 30 ΩI - II - III MAX. 10 20 25 35 mA
IV 40
VGT
VD = VDRM, RL = 30 Ω,
Tj = 25 °C ALL MAX. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C ALL MIN. 0.2 V
IH (2) IT = 500 mA MAX. 15 25 30 40 mA
ILIG = 1.2 IGT
I - III
MAX.
20 35 40 50
mAIV 40
II 25 40 70 70
dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C MIN. 100 750 500 2000 V/µs
Tj = 150 °C(3) 50 500 300 1000
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
MIN.
5.4
A/ms
(dV/dt)c = 10 V/µs 2 4.5
Without snubber 3.4 8
(dV/dt)c = 0.1 V/µs
Tj = 150 °C(3)
2.5
(dV/dt)c = 10 V/µs 1 2
Without snubber 2 6.5
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above Tj max.
Table 4. Static characteristics
Symbol Test conditions Value Unit
VT (1) ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V
VTO (1) Threshold voltage Tj = 125 °C MAX. 0.87 V
RD (1) Dynamic resistance Tj = 125 °C MAX. 60 mΩ
IDRM,
IRRM
VDRM = VRRM
Tj = 25 °C MAX. A
Tj = 125 °C 1 mA
VD = 0.9 x VDRM Tj = 150 °C(2) TYP. 1.9
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above Tj max.
:5 st: 75 mn ‘25 mam LnE-nz mE-m Lama mam man: man: & m um um
Characteristics T8T
4/8 DocID16192 Rev 4
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 2.8 °C/W
Rth(j-a) Junction to ambient (DC) 60 °C/W
Figure 1. Maximum power dissipation versus
rms on-state current Figure 2. On-state rms current versus case
temperature
P(W)
0
1
2
3
4
5
6
7
8
9
10
012345678
0
1
2
3
4
5
6
7
8
9
10
012345678
180°
α= 180°
IT(RMS)(A)
IT(RMS)(A)
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125
α= 180°
TC(°C)
Figure 3. On-state rms current versus ambient
temperature (free air convection) Figure 4. Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125
α= 180°
Ta(°C)
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K = [Zth / Rth]
TO-220AB
TO-220AB
Zth(j-a)
Zth(j-c)
Tp(s)
Figure 5. On-state characteristics (maximum
values) Figure 6. Surge peak on state current versus
number of cycles
ITM(A)
1
10
100
02345
1
10
100
02345
1
VTM(V)
Tjmax:
Vto = 0.87 V
Rd=6 0 mΩ
ITSM(A)
0
10
20
30
40
50
60
70
1 10 100
0
10
20
30
40
50
60
70
1 10 100 1000
Number of cycles
Repetitive
Tc= 97 °C
Non repetitive
Tjinitial = 25 °C One cycle
t = 20 ms
mm ma 1.00 mm 75 mo 125 :5 5n 75 mo ‘25 25 5n 75 Inn 125 25 5-2 75 mo 125
DocID16192 Rev 4 5/8
T8T Characteristics
8
Figure 7. Non repetitive surge peak on-state
current for a sinusoidal Figure 8. Relative variation of gate trigger
current and gate trigger voltage versus junction
temperature
ITSM(A), I²t (A²s)
10
100
1000
0.01 0.10 1.00 10.00
10
100
1000
0.01 0.10 1.00 10.00
dl /dt limitation: 50 A / µs
I²t
ITSM
Tjinitial = 25 °C
tp(ms)
pulse with width t <10 ms, and corresponding value of I²t
p
IGT,V
GT[Tj] / IGT,V
GT[Tj= 25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
Tj(°C)
IGT Q3
IGT Q1-Q2
IGT Q1-Q2-Q3
typical values
Figure 9. Relative variation of holding current
and latching current versus junction
temperature
Figure 10. Relative variation of static dV/dt
immunity versus junction temperature
IH,[T
j] / IH,I
L[Tj= 25 °C]IL
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125
Tj(°C)
IL
IH
typical values
dV / dt [Tj] / [Tj= 125 °C]dV / dt
0
1
2
3
4
5
6
7
25 50 75 100 125
VD=V
R= 402 V
Tj(°C)
Figure 11. Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12. Relative variation of leakage current
versus junction temperature
IDRM/IRRM [Tj;V
DRM /V
RRM] / IDRM/IRRM
[Tj= 125 °C; 600 V]
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125
Tj(°C)
VDRM =V
RRM = 600 V
VDRM =V
RRM = 400 V
VDRM =V
RRM = 200 V
for different values of blocking voltage
Package information T8T
6/8 DocID16192 Rev 4
2 Package information
Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-220AB Insulated dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
C
b2
c2
F
Ø I
L
A
a1
a2
B
e
b1
I4
l3
l2
c1
M
TRIAC Current Sensilivily Anolicalion specific
DocID16192 Rev 4 7/8
T8T Ordering information
8
3 Ordering information
Figure 13. Ordering information scheme
4 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
T810T-6I T810T-6I
TO-220AB-Ins. 2.3 g 50 Tube
T820T-6I T820T-6I
T825T-6I T825T-6I
T835T-6I T835T-6I
T 8 10 T - 6 I
TRIAC
Current
Sensitivity
Application specific
Voltage
Package
I = TO-220AB-Ins.
8 = 8 A
10 = 10 mA
20 = 20 mA
25 = 25 mA
6 = 600 V
35 = 35 mA
Table 8. Document revision history
Date Revision Changes
10-Sep-2009 1 First issue.
18-Jan-2010 2 Updated pag.1.
20-Sep-2011 3 Updated: Features. Replaced order codes with part numbers in
Table 1.
16-Sep-2013 4 Replaced order codes with part numbers in Table 1.
T8T
8/8 DocID16192 Rev 4
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