ES2F & ES2G Datasheet by Vishay General Semiconductor - Diodes Division

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VISHAY. as Mad www vushay com/doc799912 “warms ® RoHS campmm on: D\UdesAmencasfilvlshayLom DuodesAsua@vushay.com DwodesEumge®wshaycom www wshay.com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 1Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount Ultrafast Plastic Rectifier
LINKS TO ADDITIONAL RESOURCES
FEATURES
Glass passivated pellet chip junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 300 V, 400 V
IFSM 50 A
trr 35 ns
VF at IF1.1 V
TJ max. 150 °C
Package SMB (DO-214AA)
Circuit configuration Single
SMB (DO-214AA)
Cathode Anode
3
3
3
D
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage VRRM 300 400 V
Working peak reverse voltage VRWM 225 300 V
Maximum RMS voltage VRMS 210 280 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 50 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY. an: DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEuroge®wshay com www wshay,com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 2Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT
Maximum instantaneous forward voltage 2.0 A VF (1) 1.1 V
Maximum reverse current at VRRM
TA = 25 °C IR
10 µA
TA = 100 °C 200
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns
Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM trr 50 ns
Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM IRM 3.0 A
Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM Qrr 50 nC
Typical junction capacitance 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Maximum thermal resistance RJA (1) 75 °C/W
RJL (1) 25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2GHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel
ES2GHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel
VISHAY. 50 an. DwodesAmencasfllvwshayxmm DwodesAslafilvwshayLam DwodesEumge®vwshay com www wshay,com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 3Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
2.0
1.0
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
0
10
20
30
40
50
60
1 10010
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
10
100
1000
10000
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Axis Title
2nd line
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= 125 °C
TJ= -40 °C
TJ= 25 °C
TJ= 150 °C
TJ= 100 °C
2nd line
10
100
1000
10000
0.001
0.01
0.1
1
10
100
1000
0 20406080100
Axis Title
1st line
2nd line
2nd line
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
TJ= 125 °C
TJ= 100 °C
TJ= 25 °C
TJ= -40 °C
25 50 75 100 125 150 175
80
40
120
160
200
0
t
rr
Q
rr
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Junction Temperature (°C)
100
10
1
0.1 1 10 100 1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
VISHAY. on: D\odesAmencasfilvlshayLom DuodesAsua@vushay.com DwodesEumge®wshaycom www wshay.com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 4Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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