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ES2F & ES2G Datasheet by Vishay General Semiconductor - Diodes Division
View All Related Products | Download PDF Datasheet
VISHAY.
as Mad
www vushay com/doc799912
“warms
®
RoHS
campmm
on: D\UdesAmencasfilvlshayLom DuodesAsua@vushay.com DwodesEumge®wshaycom
www wshay.com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 1Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface-Mount Ultrafast Plastic Rectifier
LINKS TO ADDITIONAL RESOURCES
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 300 V, 400 V
IFSM 50 A
trr 35 ns
VF at IF1.1 V
TJ max. 150 °C
Package SMB (DO-214AA)
Circuit configuration Single
SMB (DO-214AA)
Cathode Anode
3
3
3
D
D
D
3
D
3D Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage VRRM 300 400 V
Working peak reverse voltage VRWM 225 300 V
Maximum RMS voltage VRMS 210 280 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 50 A
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY.
an: DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEuroge®wshay com
www wshay,com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 2Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT
Maximum instantaneous forward voltage 2.0 A VF (1) 1.1 V
Maximum reverse current at VRRM
TA = 25 °C IR
10 µA
TA = 100 °C 200
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns
Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM trr 50 ns
Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM IRM 3.0 A
Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Irr = 0.1 IRM Qrr 50 nC
Typical junction capacitance 4.0 V, 1 MHz CJ15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2F ES2G UNIT
Maximum thermal resistance RJA (1) 75 °C/W
RJL (1) 25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2GHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel
ES2GHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel
VISHAY.
50
an. DwodesAmencasfllvwshayxmm DwodesAslafilvwshayLam DwodesEumge®vwshay com
www wshay,com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 3Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Reverse Switching Characteristics
Fig. 6 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
2.0
1.0
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
0
10
20
30
40
50
60
1 10010
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
10
100
1000
10000
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Axis Title
2nd line
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= 125 °C
TJ= -40 °C
TJ= 25 °C
TJ= 150 °C
TJ= 100 °C
2nd line
10
100
1000
10000
0.001
0.01
0.1
1
10
100
1000
0 20406080100
Axis Title
1st line
2nd line
2nd line
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
TJ= 125 °C
TJ= 100 °C
TJ= 25 °C
TJ= -40 °C
25 50 75 100 125 150 175
80
40
120
160
200
0
t
rr
Q
rr
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 1 A, 100 A/µs
at 1 A, 100 A/µs
Recovered Stored Charge/
Reverse Recovery Time nC/ns
Junction Temperature (°C)
100
10
1
0.1 1 10 100 1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
VISHAY.
on: D\odesAmencasfilvlshayLom DuodesAsua@vushay.com DwodesEumge®wshaycom
www wshay.com/doc791000
ES2F, ES2G
www.vishay.com Vishay General Semiconductor
Revision: 13-May-2020 4Document Number: 88588
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Cathode Band
SMB (DO-214AA)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
—
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V
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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