2N7002DW Datasheet by Micro Commercial Co

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M-C'C- —Mlcm Cummemi‘ campanmx; c: D‘MENS‘ONS INCHES MM M‘N MAX MIN MAX 0006 0,014 0.15 035 0045 0,053 1.15 135 EBB 0079 0,096 200 2,45 0,026 0,65 TYF 0047 0,055 1.20 140 0071 0,087 1.80 220 QHH 77777 0,004 o 10 Du|Dena|est1 Marking:K72 0031 0,043 050 110 0010 0,018 0.26 046 :r—x;:munm> 0003 0,006 0.08 015 1? u .10
MCCSEMI.COM
Rev.3-4-12012020 1/4
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Features
'8$/
1&+$11(/
026)(7
SOT-363
Maximum Ratings
High Density Cell Design For Low RDS(ON)
Voltage Controlled Small Signal Switch
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
Halogen Free. “Green” Device (Note 1)
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Operating Junction Temperature Range: -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 833°C/W Junction to Ambient
Symbol
VDS
VGS
ID
PD
Parameter Rating Unit
V
V
mA
mW
Drain Current
Total Power Dissipation
±20
340
150
Drain-Source Voltage
Gate-Source Voltage
60
0DUNLQJ.
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S1 G1 D2
D1 G2 S2
123
654
J
M
A
C
B
G
H
K
D
L
MIN MAX MIN MAX
A 0.006 0.014 0.15 0.35
B 0.045 0.053 1.15 1.35
C 0.079 0.096 2.00 2.45
D
G 0.047 0.055 1.20 1.40
H 0.071 0.087 1.80 2.20
J ----- 0.004 ----- 0.10
K0.0310.043 0.801.10
L 0.010 0.018 0.26 0.46
M 0.003 0.006 0.08 0.15
0.026 0.65 TYP.
DIMENSIONS
DIM INCHES MM NOTE
68**(67('62/'(53$'/$<287
Dot Denotes Pin1
123
654
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
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Rev.3-4-12012020 2/4
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ELECTRICAL CHARACTERISTICS (Ta=25Яunless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 60 V
Gate-Threshold Voltage(2)VGS(th) VDS=VGS, ID=250µA 1.0 2.5 V
Gate-Body Leakage IGSS VDS =0V, VGS =±20V ±10
Zero Gate Voltage Drain Current IDSS VDS =60V, VGS =0V 80
nA
Drain-Source On-Resistance(2)RDS(on)
VGS=10V, ID=500mA 7
VGS=5V, ID=50mA 7
Drain-Source On-Voltage(2)VDS(on)
VGS=10V, ID=500mA 3.75
VGS=5V, ID=50mA 0.375
Forward Transconductance(2)gfs VDS =10V, ID =200mA 80 ms
Diode Forward Voltage VSD VGS=0V, IS=115mA 0.55 1.2 V
Input Capacitance(3)Ciss 50
Output Capacitance(3)Coss 25
Reverse Transfer Capacitance(3)Crss 5
Turn-On Time(3)td(on) 20
Turn-Off Time(3)td(off) 40
Note: 2. Pulse Test: Pulse Width İ300μs,Duty Cycleİ2%.
3.These Parameters Have No Way to Verify.
VDS=25V,VGS=0V, f=1MHz
VDD=25V,VGEN=10V,RL=50˖,
ID=500mA,RGEN=25˖ns
pF
V
Ω
.c.c. —Micm cummema) convene"); 20 1B 16 14 12 Dmlnesource OneReslstanCe (Q) to DB 01 02 03 01 Source Current (A um 00 02 04 V6 6V 5v,4v 2 3 Dram To Source Voltage (V) 0 4 o 5 0 5 0 7 Dram Current (A) 0 6 0 8 1 0 Source To Draw Vouage (V) 08 12 09 14 10 16 Drain Current (A) Resistance (0) Drain-Source On 4 5 Gate To Source Voltage (V) Rev 3» (20(2020 3,4
MCCSEMI.COM
Rev.3-4-12012020 3/4
Curve Characteristics
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01 45
0.0
0.2
0.4
0.6
0.8
1.0
VGS=2V
VGS=2.5V
VGS=3V
VGS=6V,5V,4V
TA=25°C
Pulsed
23
Drain To Source Voltage (V)
Fig. 1 - Output Characteristics
2608
0.2
0.4
0.6
0.8
0.0
1.0
VDS= 3V
Pulesd
TA=100°C
Drain Current (A)
4
Gate To Source Voltage (V)
Fig. 2 - Transfer Characteristics
TA=25°C
1.0
1.2
1.4
1.6
1.8
0.8
2.0
0.1 0.2 0.3 0.4 0.7 0.8 0.9 1.0
TA=25°C
Pulsed
0.5 0.6
Drain Current (A)
Drain-Source On-Resistance (Ω)
Fig. 3 - RDS(ON)ĂID
VGS=10V
VGS=5V
1
2
3
4
5
6
0
7
02 8
10
TA=100°C
Pulsed
46
Gate To Source Voltage (V)
Drain-Source On-Resistance (Ω)
Fig. 4 - RDS(ON)ĂVGS
TA=25°C
ID=0.5A
0.1
0.01
1
0.0 0.2 0.4 1.2 1.4 1.6
TA=100°C
Pulsed
0.6 0.8 1.0
Source To Drain Voltage (V)
Source Current (A)
Fig. 5 - ISĂVSD
TA=25°C
50 10025 125
1.2
1.4
1.6
1.8
1.0
2.0
ID= 250μA
Threshold Voltage (V)
75
Junction Temperature (°C)
Fig. 6 - Threshold Voltage
Drain Current (A)
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