STF,I,P,U,W13NM60N Datasheet by STMicroelectronics

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123
TO-220FP
123
TAB
I2PAK
123
TO-220
TAB
IPAK
TAB
123
NG1D2TS3
D(2, TAB)
G(1)
S(3)
Features
Order codes VDS RDS(on) max. ID
STF13NM60N
600 V 360 mΩ 11 A
STI13NM60N
STP13NM60N
STU13NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh technology. These revolutionary Power MOSFETs associate a
vertical structure to the company’s strip layout to yield one of the world’s lowest on-
resistance and gate charge. They are therefore suitable for the most demanding
high-efficiency converters.
Product status link
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs
in a TO-220FP, I²PAK, TO-220 and IPAK packages
STF13NM60N, STI13NM60N
STP13NM60N, STU13NM60N
Datasheet
DS6112 - Rev 6 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220FP I²PAK, TO-220, IPAK
VDS Drain-source voltage 600 V
VGS Gate-source voltage ±25 V
ID
Drain current (continuous) at TC = 25 °C 11(1) 11
A
Drain current (continuous) at TC = 100 °C 6.9(1) 6.9
IDM(2) Drain current pulsed 44(1) 44 A
PTOT Total power dissipation at TC = 25 °C 25 90 W
dv/dt(3) Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV
TJOperating junction temperature range
-55 to 150
°C
Tstg Storage temperature range °C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220FP I²PAK, TO-220 IPAK
Rthj-case Thermal resistance junction-case 5 1.39 °C/W
Rthj-a Thermal resistance junction-ambient 62.5 100 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not repetitive
(pulse width limited by TJ max) 3.5 A
EAS
Single-pulse avalanche energy
(starting TJ = 25 °C, ID = IAS, VDD = 50 V) 200 mJ
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical ratings
DS6112 - Rev 6 page 2/20
2Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 600 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 600 V 1
µA
VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 100
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A 280 360
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 V
- 790 - pF
Coss Output capacitance - 60 - pF
Crss Reverse transfer capacitance - 3.6 - pF
Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 135 - pF
QgTotal gate charge VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
(see Figure 17. Test circuit for gate
charge behavior)
- 27 - nC
Qgs Gate-source charge - 4 - nC
Qgd Gate-drain charge - 14 - nC
RgGate input resistance f = 1 MHz, open drain - 4.7 - Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16. Test circuit for resistive
load switching times and
Figure 21. Switching time waveform)
- 3 - ns
trRise time - 8 - ns
td(off) Turn-off delay time - 30 - ns
tfFall time - 10 - ns
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics
DS6112 - Rev 6 page 3/20
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 11 A
ISDM (1) Source-drain current (pulsed) - 44 A
VSD (2) Forward on voltage VGS = 0 V, ISD = 11 A - 1.5 V
trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs,
VDD = 100 V
(see Figure 18. Test circuit for inductive
load switching and diode recovery times)
- 230 ns
Qrr Reverse recovery charge - 2 µC
IRRM Reverse recovery current - 18 A
trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs,
VDD = 100 V, TJ = 150 °C
(see Figure 18. Test circuit for inductive
load switching and diode recovery times)
- 290 ns
Qrr Reverse recovery charge - 2.5 µC
IRRM Reverse recovery current - 17 A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics
DS6112 - Rev 6 page 4/20
10us 100“: TF150°0 1ms D o. Tc:25"C . Sm‘ge 10m 5mm PULSE pu‘se ‘0’1 J) ,4 ,3 72 7‘ D1 1 10 mo Vusm 10 to m ‘0 m “(5) 3. Safe operating area for 10-2 Guzman s‘ng‘epmsg é:ns 6:02 5:01 5=nn5 ' 35:002 4;ka 6:001 ELI—L Sm ‘2 m o g p W 10 «o 10 10 10 t
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for I²PAK and TO-220
AM03258v1
Figure 2. Thermal impedance for I²PAK and TO-220
Figure 3. Safe operating area for TO-220FP
I
D
10
1
0.1
0.01
0.1 1 100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
AM03259v1
Figure 4. Thermal impedance for TO-220FP
GC20940
10-1
10-2
10-3
10-4 10-3 10-2 10-1 100
K
tp (s)
Figure 5. Safe operating area for IPAK
ID
10
1
0.1
0.1 1100 VDS(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM03260v1
Figure 6. Thermal impedance for IPAK
GC20460
100
10-1
10-2
10-5 10-4 10-3 10-2 10-1
K
tp (s)
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
DS6112 - Rev 6 page 5/20
wuaaouw 20 250 240 220 200 wuaam w I (A)
Figure 7. Output characteristics
ID
12
0010 VDS(V)
20
(A)
515 25
20
VGS=10V
4
8
16
4V
5V
6V
AM03300v1
Figure 8. Transfer characteristics
ID
0
04VGS(V)
8
(A)
2610
12
20
4
8
16
VDS=20V
AM03301v1
Figure 9. Normalized VDS vs temperature
ID = 1 mA
AM03258v1
VDS
(norm)
1.08
1.04
1.00
0.96
0.92
-50 0 50 100 TJ (°C)
Figure 10. Static drain-source on-resistance
R
DS(on)
D
V
GS
=10V
810
AM03302v1
8
30
Ω
Figure 11. Gate charge vs gate-source voltage
V
GS
6
4
2
0
0 Q
g
(nC)
(V)
20
8
10
10
V
DD
=480V
I
D
=11A
30
12
300
200
100
0
400
500
V
DS
V
DS
(V)
AM03305v1
Figure 12. Capacitance variations
C
1000
100
10
1
0.1 10 V DS (V)
(pF)
1100
Ciss
Coss
Crss
AM03304v1
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
DS6112 - Rev 6 page 6/20
(norm) 725 25 50 75 100 (“0) mun-W
Figure 13. Normalized gate threshold voltage vs
temperature
V
GS(th)
80
0.70
-50 0 T
J
I
D
=250µA
AM03306v1
0.7
0.9
0.8
1.0
1.1
Figure 14. Normalized on resistance vs temperature
R
DS(on)
1.1
0.9
0.7
0.5
-50 0 T
J
(°C)
(norm)
-25 75
25 50 100
1.7
1.5
1.3
D
=5.5A
AM03307v1
ID = 5.5 A
0.5
0.9
1.3
1.7
2.1
Figure 15. Source-drain diode forward characteristics
V
SD
0 4 I
SD
(A)
(V)
2 10
68
0.4
0.6
0.8
1.0
1.2
AM09290v1
T
J
=-50°C
T
J
=25°C
T
J
=150°C
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Electrical characteristics (curves)
DS6112 - Rev 6 page 7/20
3Test circuits
Figure 16. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF
+
pulse width
VGS
Figure 17. Test circuit for gate charge behavior
AM01469v1
47 kΩ 1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST 100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 18. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
SB
G
25 Ω
AA
BB
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 19. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 20. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 21. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Test circuits
DS6112 - Rev 6 page 8/20
L7 L5 JV. «*6 L4 L2 L3
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP package information
Figure 22. TO-220FP package outline
7012510_Rev_13_B
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Package information
DS6112 - Rev 6 page 9/20
Table 8. TO-220FP package mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220FP package information
DS6112 - Rev 6 page 10/20
L2 b Mix} +e7+ L7 A7$
4.2 I²PAK package information
Figure 23. I²PAK package outline
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
I²PAK package information
DS6112 - Rev 6 page 11/20
Table 9. I²PAK package mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 - 4.60
A1 2.40 - 2.72
b 0.61 - 0.88
b1 1.14 - 1.70
c 0.49 - 0.70
c2 1.23 - 1.32
D 8.95 - 9.35
e 2.40 - 2.70
e1 4.95 - 5.15
E 10.00 - 10.40
L 13.00 - 14.00
L1 3.50 - 3.93
L2 1.27 - 1.40
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
I²PAK package information
DS6112 - Rev 6 page 12/20
4.3 TO-220 type A package information
Figure 24. TO-220 type A package outline
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220 type A package information
DS6112 - Rev 6 page 13/20
Table 10. TO-220 type A package mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
TO-220 type A package information
DS6112 - Rev 6 page 14/20
L ID] In] E b4 L2 fitL \ u =‘F‘7j 'bzax) ‘ b (M A, V7 M1 F‘ \ \ B5 9 <79];—>
4.4 IPAK (TO-251) type A package information
Figure 25. IPAK (TO-251) type A package outline
0068771_IK_typeA_rev15
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
IPAK (TO-251) type A package information
DS6112 - Rev 6 page 15/20
Table 11. IPAK (TO-251) type A package mechanical data
Dim.
mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
IPAK (TO-251) type A package information
DS6112 - Rev 6 page 16/20
5Ordering information
Table 12. Order codes
Order codes Marking Package Packing
STF13NM60N
13NM60N
TO-220FP
Tube
STI13NM60N I²PAK
STP13NM60N TO-220
STU13NM60N IPAK
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Ordering information
DS6112 - Rev 6 page 17/20
Revision history
Table 13. Document revision history
Date Revision Changes
29-Feb-2009 1 First release
13-Jan-2010 2 – Added new package, mechanical data: TO-247
– Added new package, mechanical data: D²PAK
08-Nov-2010 3 – Modified Figure 4
– Added new package, mechanical data: I²PAK
18-Jan-2012 4 – Added new package, mechanical data: IPAK
– Minor text changes
14-Nov-2012 5
The part numbers STB13NM60N and STD13NM60N have been moved to a separate
datasheet.
Section 4: Package mechanical data has been updated.
26-Oct-2020 6
The part number STW13NM60N have been moved to a separate datasheet and the document
has been updated accordingly.
Updated cover page.
Updated Section 1 Electrical ratings.
Updated Table 4. Static and Table 7. Source-drain diode.
Updated Section 4 Package information.
Added Section 5 Ordering information.
Minor text changes.
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
DS6112 - Rev 6 page 18/20
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................8
4Package information...............................................................9
4.1 TO-220FP package information ..................................................9
4.2 I²PAK package information......................................................11
4.3 TO-220 type A package information ..............................................13
4.4 IPAK (TO-251) type A package information ........................................15
5Ordering information .............................................................17
Revision history .......................................................................18
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
Contents
DS6112 - Rev 6 page 19/20
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N
DS6112 - Rev 6 page 20/20

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