STx11NM60ND Datasheet by STMicroelectronics

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October 2010 Doc ID 14625 Rev 2 1/19
19
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Figure 1. Internal schematic diagram
Order codes VDSS (@Tjmax)R
DS(on) max ID
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V < 0.45 Ω
10 A
10 A(1)
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
TO-220 TO-220FP
I²PAK
123
12
3
123
IPAK
DPAK
1
3
3
2
1
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Table 1. Device summary
Order codes Marking Package Packaging
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
DPAK
TO-220FP
I2PA K
TO-220
IPAK
Tape and reel
Tu b e
Tu b e
Tu b e
Tu b e
www.st.com
Contents STD/F/I/P/U11NM60ND
2/19 Doc ID 14625 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STD/F/I/P/U11NM60ND Electrical ratings
Doc ID 14625 Rev 2 3/19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK/I²PAK,
TO-220/IPAK TO-220FP
VDS Drain-source voltage (VGS=0) 600 V
VGS Gate-source voltage ± 25 V
IDDrain current (continuous) at TC = 25°C 10 10 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100°C 6.3 6.3(1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 40 40 (1) A
PTOT Total dissipation at TC = 25°C 90 25 W
dv/dt (3)
3. ISD 10 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS, peak VDS V(BR)DSS
Peak diode recovery voltage slope 40 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
2500 V
Tstg Storage temperature -55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
Rthj-case Thermal resistance junction-case
max 1.38 5 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 100 62.5 °C/W
Rthj-pcb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max 50 °C/W
TlMaximum lead temperature for
soldering purposes 300 300 °C
Electrical ratings STD/F/I/P/U11NM60ND
4/19 Doc ID 14625 Rev 2
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAS Avalanche current, repetitive or not-repetitive(1)
1. Pulse width limited by Tj max
3.5 A
EAS Single pulse avalanche energy (2)
2. starting Tj= 25 °C, ID=IAS, VDD= 50 V
200 mJ
STD/F/I/P/U11NM60ND Electrical characteristics
Doc ID 14625 Rev 2 5/19
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 1 mA, VGS= 0 600 V
dv/dt(1)
1. Value measured at turn off under inductive load
Drain-source voltage slope VDD = 480 V,ID = 10 A,
VGS = 10 V 45 V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,@125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V 100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS= 10 V, ID= 5 A 0.37 0.45 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance VDS =15 V, ID= 5 A - 7.5 - S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f =1 MHz,
VGS = 0 -
850
44
5
-
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS = 0, VDS = 0V to 480 V - 130 - pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-3.7- Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 10 A
VGS = 10 V
(see Figure 19)
-
30
4
16
-
nC
nC
nC
Electrical characteristics STD/F/I/P/U11NM60ND
6/19 Doc ID 14625 Rev 2
Table 7. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
-
16
7
50
9
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -10
40
A
A
VSD(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage ISD = 10 A, VGS=0 - 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 20)
-
130
0.69
11
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 10 A
Tj = 150 °C (see Figure 20)
-
200
1.2
12
ns
µC
A
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STD/F/I/P/U11NM60ND Electrical characteristics
Doc ID 14625 Rev 2 7/19
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
I²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
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10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
0.01
AM08612v1
I
D
10
1
0.10.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM08613v1
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Electrical characteristics STD/F/I/P/U11NM60ND
8/19 Doc ID 14625 Rev 2
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
mmn mum mm mm) (mm (harm) 1.2 2.2 1 1.3 0.5 1.4 0.5 LD 0.4 0.5 0 750 a so 100 150 TJ(‘C) ‘3 750 so mo 150 ncc) Hv272m VS“ BVnss(V) (V) (norm) 0.9 0.5 0.7 0.6 0.5 0.4 a 2 4 6 a m MA) 1.93 1,04 1.00 0.95 0.92 so 100 150 T4 ((2)
STD/F/I/P/U11NM60ND Electrical characteristics
Doc ID 14625 Rev 2 9/19
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
Test circuits STD/F/I/P/U11NM60ND
10/19 Doc ID 14625 Rev 2
3 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STD/F/I/P/U11NM60ND Package mechanical data
Doc ID 14625 Rev 2 11/19
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STD/F/I/P/U11NM60ND
12/19 Doc ID 14625 Rev 2
Figure 24. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
5F L30
STD/F/I/P/U11NM60ND Package mechanical data
Doc ID 14625 Rev 2 13/19
TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
C24 41 1 A74. 0004952_H
Package mechanical data STD/F/I/P/U11NM60ND
14/19 Doc ID 14625 Rev 2
THERMAL mo we: PLANE A‘
STD/F/I/P/U11NM60ND Package mechanical data
Doc ID 14625 Rev 2 15/19
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
Package mechanical data STD/F/I/P/U11NM60ND
16/19 Doc ID 14625 Rev 2
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10
o
TO-251 (IPAK) mechanical data
0068771_H
6.7 1.5 3.0 1.6 2.3 2,3 15 40 mm mm T Access "me a‘ 5‘0! Iacuuon ‘4424 dee slu| a measwed m cars rm m hub |aDE sun 25mm mm mam w wtchvs cumu‘auvs lnlwzm'» on warm FEED nlnzcmN o/ruzmm : v 'H ‘ 51 w . M Di 1 ’ w—dm ‘ ’ - uww “mm ' *v m1; USN Daemon m Feed Mm amamg mums
STD/F/I/P/U11NM60ND Packaging mechanical data
Doc ID 14625 Rev 2 17/19
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STD/F/I/P/U11NM60ND
18/19 Doc ID 14625 Rev 2
6 Revision history
Table 10. Document revision history
Date Revision Changes
23-Apr-2008 1 First release
25-Oct-2010 2
Corrected Figure 2: Safe operating area for TO-220, I²PAK
Corrected Figure 4: Safe operating area for TO-220FP
Corrected Figure 6: Safe operating area for DPAK, IPAK
STD/F/I/P/U11NM60ND
Doc ID 14625 Rev 2 19/19
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