MCP111, 112 Datasheet by Microchip Technology

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MIC§CHIP MCP111/112 l: r—\ :I I: U UH iiiii +****1
2004-2016 Microchip Technology Inc. DS20001889F-page 1
MCP111/112
Features
Ultra-Low Supply Current: 1.75 µA (Max.)
Precision Monitoring Options Of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
Resets Microcontroller in a Power-Loss Event
Active-Low VOUT Pin:
-MCP111 Active-Low, Open-Drain
-MCP112 Active-Low, Push-Pull
Available in SOT23-3, TO-92, SC-70 and
SOT-89-3 Packages
Temperature Range:
- Extended: -40°C to +125°C
(except MCP1XX-195)
- Industrial: -40°C to +85°C (MCP1XX-195 Only)
Pb-Free Devices
Applications
Critical Microcontroller and Microprocessor
Power-Monitoring Applications
• Computers
Intelligent Instruments
Portable Battery-Powered Equipment
General Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltages are
available.
Package Types
Block Diagram
3-Pin SOT23-3/SC-70
VDD
VOUT
MCP111/112
1
2
3
VSS
VSS
VOUT
3-Pin TO-92
VDD
1 32
VDD VSS
VOUT
3-Pin SOT-89
VDD
MCP111/112
VDD
Comparator
+
Output
Driver
VOUT
Band Gap
Reference
VSS
DEVICE FEATURES
Device Output Reset Delay
(typ.)
SOT-23/SC70
Package Pin Out
(Pin # 1, 2, 3) Comment
Type Pull-up Resistor
MCP111 Open-drain External No VOUT, VSS, VDD
MCP112 Push-pull No No VOUT, VSS, VDD
MCP102 Push-pull No 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP103 Push-pull No 120 ms VSS, RST, VDD See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP121 Open-drain External 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS20001906)
MCP131 Open-Drain Internal (~95 k)120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS20001906)
Micropower Voltage Detector
MCP111/112
DS20001889F-page 2 2004-2016 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD...................................................................................7.0V
Input current (VDD) .......................................................10 mA
Output current (RST) ....................................................10 mA
Rated Rise Time of VDD .............................................100V/µs
All inputs and outputs (except RST) w.r.t. VSS
.............................................................. -0.6V to (VDD + 1.0V)
RST output w.r.t. VSS .......................................-0.6V to 13.5V
Storage temperature .....................................65°C to + 150°C
Ambient temp. with power applied ...............-40°C to + 125°C
Maximum Junction temp. with power applied ...............150°C
ESD protection on all pins2kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111),
TA = -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
Operating Voltage Range VDD 1.0 5.5 V
Specified VDD Value to VOUT low VDD 1.0 V I RST = 10 µA, V RST < 0.2V
Operating Current IDD < 1 1.75 µA
VDD Trip Point MCP1XX-195 VTRIP 1.872 1.900 1.929 V TA = +25°C (Note 1)
1.853 1.900 1.948 V TA = -40°C to +85°C (Note 2)
MCP1XX-240 2.285 2.320 2.355 V TA = +25°C (Note 1)
2.262 2.320 2.378 V Note 2
MCP1XX-270 2.591 2.630 2.670 V TA = +25°C (Note 1)
2.564 2.630 2.696 V Note 2
MCP1XX-290 2.857 2.900 2.944 V TA = +25°C (Note 1)
2.828 2.900 2.973 V Note 2
MCP1XX-300 2.886 2.930 2.974 V TA = +25°C (Note 1)
2.857 2.930 3.003 V Note 2
MCP1XX-315 3.034 3.080 3.126 V TA = +25°C (Note 1)
3.003 3.080 3.157 V Note 2
MCP1XX-450 4.314 4.380 4.446 V TA = +25°C (Note 1)
4.271 4.380 4.490 V Note 2
MCP1XX-475 4.561 4.630 4.700 V TA = +25°C (Note 1)
4.514 4.630 4.746 V Note 2
VDD Trip Point Tempco TTPCO ±100 — ppm/°
C
Note 1: Trip point is ±1.5% from typical value.
2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
4: This parameter is established by characterization and is not 100% tested.
2004-2016 Microchip Technology Inc. DS20001889F-page 3
MCP111/112
Threshold Hysteresis
min. = 1%, max = 6%) MCP1XX-195 VHYS 0.019 0.114 V TA = +25°C
MCP1XX-240 0.023 0.139 V
MCP1XX-270 0.026 0.158 V
MCP1XX-290 0.029 0.174 V
MCP1XX-300 0.029 0.176 V
MCP1XX-315 0.031 0.185 V
MCP1XX-450 0.044 0.263 V
MCP1XX-475 0.046 0.278 V
VOUT Low-level Output Voltage VOL ——0.4VI
OL = 500 µA, VDD = VTRIP(MIN)
VOUT High-level Output Voltage VOH VDD – 0.6 V IOH = 1 mA, For only MCP112
(push-pull output)
Open-drain High Voltage on Output VODH 13.5
(3) VMCP111 only,
VDD = 3.0V, Time voltage >
5.5V applied 100s,
current into pin limited to
2 mA, +25°C operation
recommended
Note 3, Note 4
Open-drain Output Leakage Current
(MCP111 only)
IOD —0.1µA
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111),
TA = -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
Note 1: Trip point is ±1.5% from typical value.
2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
4: This parameter is established by characterization and is not 100% tested.
MCP111/112
DS20001889F-page 4 2004-2016 Microchip Technology Inc.
FIGURE 1-1: Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(only MCP111), TA = -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
VDD Detect to VOUT Inactive tRPU —90 µs Figure 1-1 and CL = 50 pF
(Note 1)
VDD Detect to VOUT Active tRPD —130 — µs VDD ramped from VTRIP(MAX) +
250 mV down to VTRIP(MIN)
250 mV, per Figure 1-1,
CL = 50 pF (Note 1)
VOUT Rise Time After VOUT Active tRT —5 —µs For VOUT 10% to 90% of final
value per Figure 1-1, CL = 50 pF
(Note 1)
Note 1: These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(MCP111 only), TA = -40°C to +125°C.
Parameters Symbol Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 +85 °C MCP1XX-195
Specified Temperature Range TA-40 +125 °C Except MCP1XX-195
Maximum Junction Temperature TJ +150 °C
Storage Temperature Range TA-65 +150 °C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23 JA —336 —°C/W
Thermal Resistance, 3L-SC-70 JA —340 —°C/W
Thermal Resistance, 3L-TO-92 JA — 131.9 °C/W
Thermal Resistance, 3L-SOT-89 JA —110 —°C/W
1V
1V
VTRIP
VDD
VOUT
tRPU
VOH
tRT
tRPD
VOL
2004-2016 Microchip Technology Inc. DS20001889F-page 5
MCP111/112
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-1: IDD vs. Temperature
(MCP111-195).
FIGURE 2-2: IDD vs. Temperature
(MCP112-300).
FIGURE 2-3: IDD vs. Temperature
(MCP112-475).
FIGURE 2-4: IDD vs. VDD (MCP111-195).
FIGURE 2-5: IDD vs. VDD (MCP112-300).
FIGURE 2-6: IDD vs. VDD (MCP112-475).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
MCP112-300 5.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP112-475
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
IDD (uA)
-40°C
+25°C
+85°C
+125°C
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.02.03.04.05.06.0
VDD (V)
IDD (uA)
MCP112-300
-40°C
+25°C
+85°C
+125°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
IDD (uA)
MCP112-475
-40°C
+25°C
+85°C
+125°C
MCP111/112
DS20001889F-page 6 2004-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-7: VTRIP and VHYST vs.
Temperature (MCP111-195).
FIGURE 2-8: VTRIP and VHYST vs.
Temperature (MCP112-300).
FIGURE 2-9: VTRIP and VHYST vs.
Temperature (MCP112-475).
FIGURE 2-10: VOL vs. IOL
(MCP111-195 @V
DD = 1.7V).
FIGURE 2-11: VOL vs. IOL
(MCP112-300 @V
DD = 2.7V).
FIGURE 2-12: VOL vs. IOL
(MCP112-475 @V
DD = 4.4V).
1.895
1.900
1.905
1.910
1.915
1.920
1.925
1.930
1.935
1.940
1.945
1.950
-60 -10 40 90 140
Temperature (°C)
VTRIP (V)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
Hyst (V)
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
MCP111-195
max temp is
+85°C
2.900
2.920
2.940
2.960
2.980
3.000
3.020
3.040
-60 -10 40 90 140
Temperature (°C)
VTRIP (V)
0.082
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.098
0.100
Hyst (V)
MCP112-300
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
4.580
4.600
4.620
4.640
4.660
4.680
4.700
4.720
4.740
4.760
4.780
4.800
-60 -20 20 60 100 140
Temperature (°C)
VTRIP (V)
0.100
0.110
0.120
0.130
0.140
0.150
0.160
0.170
0.180
Hyst (V)
MCP112-475
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
-40°C
+25°C
+85°C
+125°C
MCP111-195
VDD = 1.7V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
MCP112-300
VDD = 2.7V
-40°C
+25°C
+85°C
+125°C
0.000
0.010
0.020
0.030
0.040
0.050
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
MCP112-475
VDD = 4.4V
-40°C
+25°C
+85°C
+125°C
2004-2016 Microchip Technology Inc. DS20001889F-page 7
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-13: VOL vs. Temperature
(MCP111-195 @ VDD = 1.7V).
FIGURE 2-14: VOL vs. Temperature
(MCP112-300 @ VDD = 2.7V).
FIGURE 2-15: VOL vs. Temperature
(MCP112-475 @ VDD = 4.4V).
FIGURE 2-16: VOH vs. IOH
(MCP112-300 @ VDD = 3.1V).
FIGURE 2-17: VOH vs. IOH
(MCP112-475 @ VDD = 4.8V).
FIGURE 2-18: Typical Transient Response
(25 °C).
0.000
0.020
0.040
0.060
0.080
0.100
0.120
-40 0 40 80 120
Temperature (°C)
VOL (V)
IOL = 0.00 mA
MCP111-195
VDD = 1.7 V
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0.75 mA
IOL = 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
-40 0 40 80 120
Temperature (°C)
VOL (V)
MCP112-300
VDD = 2.7V
IOL = 0.00 mA
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0.75 mA
IOL = 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
-40 0 40 80 120
Temperature (°C)
VOL (V)
IOL = 0.00 mA
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0.75 mA
IOL = 1.00 mA
MCP112-475
VDD = 4.4V
2.900
2.950
3.000
3.050
3.100
3.150
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOH (V)
-40 °C +25 °C
+85 °C
+125 °C
MCP112-300
VDD = 3.1V
4.680
4.700
4.720
4.740
4.760
4.780
4.800
4.820
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOH (V)
MCP112-475
VDD = 4.8V
-40 °C
+25 °C
+85 °C
+125 °C
0
100
200
300
400
500
600
0.001 0.01 0.1 1 10
VTRIP(min) - VDD
Transient Duration (µs)
MCP111-195
MCP112-475
MCP112-300
MCP111/112
DS20001889F-page 8 2004-2016 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-19: tRPD vs. Temperature
(MCP111-195).
FIGURE 2-20: tRPD vs. Temperature
(MCP112-300).
FIGURE 2-21: tRPD vs. Temperature
(MCP112-475).
FIGURE 2-22: tRPU vs. Temperature
(MCP111-195).
FIGURE 2-23: tRPU vs. Temperature
(MCP112-300).
FIGURE 2-24: tRPU vs. Temperature
(MCP112-475).
0
50
100
150
200
250
300
350
-40 -15 10 35 60 85 110
Temperature (°C)
tRPD (µs)
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 1.7V
VDD decreasing from:
5V - 0V
MCP111-195
0
20
40
60
80
100
120
140
160
-40 -15 10 35 60 85 110
Temperature (°C)
tRPD (µs)
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 2.7V
VDD decreasing from:
5V - 0V
MCP112-300
0
50
100
150
200
250
-40 -15 10 35 60 85 110
Temperature (°C)
tRPD (µs)
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 4.4V
VDD decreasing from:
5V - 0V
MCP112-475
0
50
100
150
200
250
300
350
400
-40 -15 10 35 60 85 110
Temperature (°C)
tRPU (µs)
VDD increasing from:
0V - 2.1V
VDD increasing
from: 0V - 5.5V
VDD increasing from:
0V - 2.8V VDD increasing
from: 0V - 4.0V
MCP111-195
0
20
40
60
80
100
120
140
-40 -15 10 35 60 85 110
Temperature (°C)
tRPU (µs)
VDD increasing from:
0V - 3.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 3.3V
VDD increasing from:
0V - 4.0V
MCP112-300
0
50
100
150
200
250
-40 -15 10 35 60 85 110
Temperature (°C)
tRPU (µs)
VDD increasing from:
0V - 4.9V
VDD increasing from:
0V - 5.0V
VDD increasing from:
0V - 5.5V
MCP112-475
"M fiH‘mV’n "
2004-2016 Microchip Technology Inc. DS20001889F-page 9
MCP111/112
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-25: tRT vs. Temperature
(MCP111-195).
FIGURE 2-26: tRT vs. Temperature
(MCP112-300).
FIGURE 2-27: tRT vs. Temperature
(MCP112-475).
FIGURE 2-28: Open-Drain Leakage
Current vs. Voltage Applied to VOUT Pin
(MCP111-195).
20
25
30
35
40
45
50
55
60
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 2.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 2.8V
VDD increasing
from: 0V - 4.0V
MCP111-195
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 3.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 3.3V
VDD increasing from:
0V - 4.0V
MCP112-300
0.0800
0.0900
0.1000
0.1100
0.1200
0.1300
0.1400
0.1500
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 4.8V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 4.9V
VDD increasing from:
0V - 5.0V
MCP112-475
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
01234567891011121314
Pull-Up Voltage (V)
Open-Drain Leakage (A)
125°C
25°C
- 40°C
10m
100µ
1m
10µ
10n
100n
1n
100p
1p
10p
100f
MCP111/112
DS20001889F-page 10 2004-2016 Microchip Technology Inc.
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Pin Number
Symbol Function
SOT-23-3
SC-70 SOT-89-3 T0-92
111V
OUT Output State
VDD Falling:
H = VDD > VTRIP
L = VDD < VTRIP
VDD Rising:
H = VDD > VTRIP + VHYS
L = VDD < VTRIP + VHYS
233V
SS Ground reference
322V
DD Positive power supply
—4V
DD Positive power supply
2004-2016 Microchip Technology Inc. DS20001889F-page 11
MCP111/112
4.0 APPLICATION INFORMATION
For many of today’s microcontroller applications, care
must be taken to prevent low-power conditions that can
cause many different system problems. The most
common causes is a brown-out condition, where the
system supply drops below the operating level momen-
tarily. The second most common cause is when a slowly
decaying power supply causes the microcontroller to
begin executing instructions without sufficient voltage to
sustain SRAM, thus producing indeterminate results.
Figure 4-1 shows a typical application circuit.
FIGURE 4-1: Typical Application Circuit.
4.1 VTRIP Operation
The voltage trip point (VTRIP) is determined on the falling
edge of VDD. The actual voltage trip point (VTRIPAC) will
be between the minimum trip point (VTRIPMIN) and the
maximum trip point (VTRIPMAX). There is a hysteresis on
this trip point to remove any “jitter” that would occur on
the VOUT pin when the device VDD is at the trip point.
Figure 4-2 shows the state of the VOUT pin as
determined by the VDD voltage. The VTRIP specification
is for falling VDD voltages. When the VDD voltage is
rising, the VOUT pin will not be driven high until VDD is at
VTRIP + VHYS.
FIGURE 4-2: VOUT Operation as Determined by the VTRIP and VHYS.
4.2 Negative Going VDD Transients
The minimum pulse width (time) required to cause a
reset may be an important criteria in the implementa-
tion of a Power-on Reset (POR) circuit. This time is
referred to as transient duration, defined as the amount
of time needed for these supervisory devices to
respond to a drop in VDD. The transient duration time is
dependent on the magnitude of VTRIP – VDD. Generally
speaking, the transient duration decreases with
increases in VTRIP – VDD.
Figure 4-3 shows a typical transient duration vs. reset
comparator overdrive for which the MCP111/112 will
not generate a reset pulse. It shows that the farther
below the trip point the transient pulse goes, the
duration of the pulse required to cause a reset gets
shorter. Figure 2-18 shows the transient response
characteristics for the MCP111/112.
A 0.1 µF bypass capacitor, mounted as close as
possible to the VDD pin, provides additional transient
immunity (refer to Figure 4-1).
2
MCP11X
VDD
VDD
VDD
VOUT MCLR
(Reset Input)
VSS GND
PIC®
Microcontroller
3
1
RPU
Note 1: RPU may be required with the MCP111
due to the open-drain output. Resistor
RPU is not required with the MCP112.
0.1
µF (1)
VDD VTRIPMAX
VTRIPMIN
VTRIPAC
VTRIPAC
VTRIPAC + VHYSAC
VOUT
1V
< 1 V is outside the
device specifications
MCP111/112
DS20001889F-page 12 2004-2016 Microchip Technology Inc.
FIGURE 4-3: Example of Typical
Transient Duration Waveform.
4.3 Effect of Temperature on Time-Out
Period (tRPU)
The time-out period (tRPU) determines how long the
device remains in the reset condition. This is affected
by both VDD and temperature. The graph shown in
Figures 2-22,2-23 and 2-24 show the typical response
for different VDD values and temperatures.
4.4 Using in PIC® Microcontroller
ICSP™ Applications (MCP111
only)
Figure 4-4 shows the typical application circuit for using
the MCP111 for voltage supervisory function when the
PIC microcontroller will be programmed via the In-Cir-
cuit Serial Programming™ (ICSP) feature. Additional
information is available in TB087, “Using Voltage
Supervisors with PIC® Microcontroller Systems which
Implement In-Circuit Serial Programming™”,
DS91087.
FIGURE 4-4: Typical Application Circuit
for PIC® Microcontroller with the ICSP™ feature.
Note: It is recommended that the current into the
RST pin be current limited by a 1 k
resistor.
VDD/VPP
VDD
MCLR
(reset input)
(Active-Low)
VSS
PIC®
MCU
RPU
0.1 µF
1k
MCP111
VDD
RST
VSS
NNN alor ( ‘)
2004-2016 Microchip Technology Inc. DS20001889F-page 13
MCP111/112
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
3-Lead SOT-23
3-Lead TO-92 Example:
Device Code
MCP111T-195I/TT MPNN
MCP111T-240ETT MQNN
MCP111T-270E/TT MGNN
MCP111T-290E/TT NHNN
MCP111T-300E/TT MJNN
MCP111T-315E/TT MKNN
MCP111T-450E/TT MLNN
MCP111T-475E/TT MMNN
MCP112T-195I/TT MRNN
MCP112T-240ETT MSNN
MCP112T-270E/TT MANN
MCP112T-290E/TT MBNN
MCP112T-300E/TT MCNN
MCP112T-315E/TT MDNN
MCP112T-450E/TT MENN
MCP112T-475E/TT MFNN
Example:
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
YWWNNN
XXXXXX
XXXXXX
XXXXXX
MCP111
240E
TO^^
626256
3
e
Device Code
MCP111-240E/TO 240E
MCP111-270E/TO 270E
MCP111-290E/TO 290E
MCP111-300E/TO 300E
MCP111-315E/TO 315E
MCP111-450E/TO 450E
MCP111-475E/TO 475E
MCP111-195I/TO 195I
XXNN
MP25
XXNN U U XXXYYWW UUU :6 UH
MCP111/112
DS20001889F-page 14 2004-2016 Microchip Technology Inc.
Package Marking Information (Continued)
3-Lead SC-70 Example:
Device Code
MCP111T-195I/LB EPNN
MCP111T-240E/LB EQNN
MCP111T-270E/LB EGNN
MCP111T-290E/LB EHNN
MCP111T-300E/LB EJNN
MCP111T-315E/LB EKNN
MCP111T-450E/LB ELNN
MCP111T-475E/LB EMNN
MCP112T-195I/LB ERNN
MCP112T-240E/LB ESNN
MCP112T-270E/LB EANN
MCP112T-290E/LB EBNN
MCP112T-300E/LB ECNN
MCP112T-315E/LB EDNN
MCP112T-450E/LB EENN
MCP112T-475E/LB EFNN
3-Lead SOT-89 Example:
EP25
NNN
MP1626
256
Device Code
MCP111T-195I/MB MP
MCP111T-240EMB MQ
MCP111T-270E/MB MG
MCP111T-290E/MB NH
MCP111T-300E/MB MJ
MCP111T-315E/MB MK
MCP111T-450E/MB ML
MCP111T-475E/MB MM
MCP112T-195I/MB MR
MCP112T-240EMB MS
MCP112T-270E/MB MA
MCP112T-290E/MB MB
MCP112T-300E/MB MC
MCP112T-315E/MB MD
MCP112T-450E/MB ME
MCP112T-475E/MB MF
2004-2016 Microchip Technology Inc. DS20001889F-page 15
MCP111/112
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DS20001889F-page 16 2004-2016 Microchip Technology Inc.
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3-Lead Plastic Small Outline Transistor (TT) [SOT-23] stLK/ SCREEN RECOMMENDED LAND PATTERN Umts MILUMETERS Dtmension Ltmtts MIN \ NOM \ MAX Contact Pttch E 0.95 33c Contact Pad Spacmg c 2.30 Contact Pad Width txa) x 0.55 Contact Pad Length (x3) v 1 05 DIsIance Between Pads G 1 25 OveraH Wu“?! Z 3 35 Nu|es: t Dimenstoning and toterancing per ASME YM 5M BSC Basic Dimehston. Theorettcauy exact value shown wtthuut toterances. Mlcmcmp Technology Drawmg No COA72104A
2004-2016 Microchip Technology Inc. DS20001889F-page 17
MCP111/112
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2X Q 0.15 C I 2X ML 3X TIPS Q 0.15 C Q 030 C 3X b I-IIEI TOP VIEW I I IfI SEATING! A iI : I A2 fl—I— PLANE I )l L ‘j IN, SIDE VIEW
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DS20001889F-page 18 2004-2016 Microchip Technology Inc.
0.15 C
0.15 C
0.10 C A B
C
SEATING
PLANE
12
N
2X
TOP VIEW
SIDE VIEW
Microchip Technology Drawing C04-060C Sheet 1 of 2
2X
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
3-Lead Plastic Small Outline Transistor (LB) [SC70]
D
EE1
e
e
3X b
A
A1
A2
0.30 C
3X TIPS
END VIEW
c
L
B
A
2004-2016 Microchip Technology Inc. DS20001889F-page 19
MCP111/112
Microchip Technology Drawing C04-060C Sheet 2 of 2
Number of Pins
Overall Height
Terminal Width
Overall Width
Terminal Length
Exposed Pad Width
Molded Package Thickness
Pitch
Standoff
Units
Dimension Limits
A1
A
b
E1
A2
e
L
E
N
0.65 BSC
0.10
0.15
0.80
0.00
-
0.20
1.25 BSC
-
-
2.10 BSC
MILLIMETERS
MIN NOM
3
0.46
0.40
1.10
0.10
MAX
c-0.20 0.26
Lead Thickness
3-Lead Plastic Small Outline Transistor (LB) [SC70]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
Overall Length
Exposed Pad Length
D
D2 2.50
2.00 BSC
2.60 2.70
0.80 - 1.00
REF: Reference Dimension, usually without tolerance, for information purposes only.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.15mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
MCP111/112
DS20001889F-page 20 2004-2016 Microchip Technology Inc.
RECOMMENDED LAND PATTERN
Microchip Technology Drawing No. C04-2060B
3-Lead Plastic Small Outline Transistor (LB) [SC70]
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
Dimensioning and tolerancing per ASME Y14.5M1.
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
Dimension Limits
Units
CContact Pad Spacing
Contact Pitch
MILLIMETERS
0.65 BSC
MIN
E
MAX
2.20
Contact Pad Length
Contact Pad Width
Y
X
0.85
0.50
NOM
Distance Between Pads G 1.25
C
E
X
Y
G
SILK SCREEN
12
3
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2004-2016 Microchip Technology Inc. DS20001889F-page 21
MCP111/112
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DS20001889F-page 22 2004-2016 Microchip Technology Inc.
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2004-2016 Microchip Technology Inc. DS20001889F-page 23
MCP111/112
RECOMMENDED LAND PATTERN
Microchip Technology Drawing C04-2029C
3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]
SILK SCREEN
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Notes:
Dimensioning and tolerancing per ASME Y14.5M1.
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
Y1
Y
X
C
X1
X2
Dimension Limits
Units
Y (2 PLACES)
Y1
X2 (2 PLACES)
X1
MILLIMETERS
MIN
X (3 PLACES)
MAX
1.300
3.125
Y3
Y2
Y4
NOM
1.50 (BSC)C
0.900
1.733
0.416
1.475
0.825
1.000
Y4
Y3
G
Y2
G (2 PLACES) 0.600
QOOOO ”33mm
MCP111/112
DS20001889F-page 24 2004-2016 Microchip Technology Inc.
5.2 Product Tape and Reel Specifications
FIGURE 5-1: Embossed Carrier Dimensions (8, 12, 16 and 24 mm tape only).
FIGURE 5-2: 3-Lead SOT-23/SC70 Device Tape and Reel Specifications.
CARRIER TAPE/CAVITY DIMENSIONS
Case
Outline Package
Type
Carrier
Dimensions Cavity
Dimensions Output
Quantity
Units
Reel
Diameter in
mm
W
mm P
mm A0
mm B0
mm K0
mm
TT SOT-23B 3L 8 4 3.15 2.77 1.22 3000 180
LB SC-70 3L 8 4 2.4 2.4 1.19 3000 180
Top
Cover
Tape
K0
P
W
B0
A0
Standard Reel Component Orientation
Device
Marking
PIN 1
User Direction of Feed
W
P
NWT \O O O HO O O O O L v 4—v
2004-2016 Microchip Technology Inc. DS20001889F-page 25
MCP111/112
FIGURE 5-3: TO-92 Devices.
FIGURE 5-4: SOT-89 Devices.
Device
Marking
P
Seal
Tape
Back
Tape
MARK
FACE
User Direction of Feed
W
MARK
FACE
MARK
FACE
Note: Bent leads are for Tape and Reel only.
Pin 1
User Direction of Feed
P, Pitch
Standard Reel Component Orientation Reverse Reel Component Orientation
W, Width
of Carrier
Tape
Pin 1
MCP111/112
DS20001889F-page 26 2004-2016 Microchip Technology Inc.
NOTES:
2004-2016 Microchip Technology Inc. DS20001889F-page 27
MCP111/112
APPENDIX A: REVISION HISTORY
Revision F (July 2016)
The following is the list of modifications:
1. Updated Table 3-1.
2. Updated Section 5.0 “Packaging informa-
tion”.
3. Minor typographical corrections.
Revision E (January 2013)
Added a note to each package outline drawing.
Revision D (June 2005)
1. Added SOT-89-3 package information
throughout.
Revision C (March 2005)
The following is the list of modifications:
1. Added Section 4.4 “Using in PIC® Microcon-
troller ICSP™ Applications (MCP111 only)”
on using the MCP111 in PIC microcontroller
ICSP applications.
2. Added VODH specifications in Section 1.0
“Electrical Characteristics” (for ICSP
applications).
3. Added Figure 2-28.
4. Added devices features table to page 1.
5. Updated SC-70 package markings and added
Pb-free marking information to Section 5.0
“Packaging information.
6. Added Appendix A: “Revision History”.
Revision B (August 2004)
1. Corrected package marking information in
Section 5.0 “Packaging information”.
Revision A (May 2004)
Original release of this document.
MCP111/112
DS20001889F-page 28 2004-2016 Microchip Technology Inc.
NOTES:
PART NO. X T XXX ‘V 41x
2004-2016 Microchip Technology Inc. DS20001889F-page 29
MCP111/112
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP111: MicroPower Voltage Detector, open-drain
MCP111T: MicroPower Voltage Detector, open-drain
(Tape and Reel)
MCP112: MicroPower Voltage Detector, push-pull
MCP112T: MicroPower Voltage Detector, push-pull
(Tape and Reel)
Monitoring Options: 195 = 1.90V
240 = 2.32V
270 = 2.63V
290 = 2.90V
300 = 2.93V
315 = 3.08V
450 = 4.38V
475 = 4.63V
Temperature Range: I = -40°C to +85°C (MCP11X-195 only)
E = -40°C to +125°C (Except MCP11X-195 only)
Package: LB = SC-70, 3-lead
MB = SOT-89, 3-lead
TO = TO-92, 3-lead
TT = SOT-23B, 3-lead
PART NO. XXX X
Temperature
Monitoring
Options
Device
Examples:
a) MCP111T-195I/TT: Tape and Reel,
1.95V option, open-drain,
-40°C to +85°C,
SOT-23B package.
b) MCP111T-315E/LB: Tape and Reel,
3.15V option, open-drain,
-40°C to +125°C,
SC-70-3 package.
c) MCP111-300E/TO: 3.00V option, open-drain,
-40°C to +125°C,
TO-92-3 package.
d) MCP111-315E/MB: 3.15V option, open-drain,
-40°C to +125°C,
SOT-89-3 package.
a) MCP112T-290E/TT: Tape and Reel,
2.90V option, push-pull, -
40°C to +125°C,
SOT-23B-3 package.
b) MCP112T-475E/LB: Tape and Reel,
4.75V option, push-pull,
-40°C to +125°C,
SC-70-3 package.
c) MCP112-450E/TO: 4.5V option, push-pull,
-40°C to +125°C,
TO-92-3 package.
d) MCP112-315E/MB: 3.15V option, push-pull,
-40°C to +125°C,
SOT-89-3 package.
Range
XX
Package
X
Tape/Reel
Option
MCP111/112
DS20001889F-page 30 2004-2016 Microchip Technology Inc.
NOTES:
YSTEM
2004-2016 Microchip Technology Inc. DS20001889F-page 31
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2004-2016, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0860-4
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTS
YSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
6‘ ‘MICRDCHIP
DS20001889F-page 32 2004-2016 Microchip Technology Inc.
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