MXD1210 Datasheet by Analog Devices Inc./Maxim Integrated

View All Related Products | Download PDF Datasheet
[VI/JXI/VI IIIIAXIM :‘ fll—Iflfl |_| \ , V MAXIM MAXIM fll—Vflflflflflfl LILILILILILILILI [VI/JXI/VI
General Description
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-tol-
erance) condition. When the power supply begins to
fail, the RAM is write-protected, and the device switch-
es to battery-backup mode.
Applications
Microprocessor Systems
Computers
Embedded Systems
Features
Battery Backup
Memory Write Protection
230µA Operating Mode Quiescent Current
2nA Backup Mode Quiescent Current
Battery Freshness Seal
Optional Redundant Battery
Low Forward-Voltage Drop on VCC Supply Switch
5% or 10% Power-Fail Detection Options
Tests Battery Condition During Power-Up
8-Pin SO Available
MXD1210
Nonvolatile RAM Controller
________________________________________________________________
Maxim Integrated Products
1
8
VCCI
+5V 1
2
7VBATT2
6
3
5
4
GND
CE
VCC
CMOS
RAM
MXD1210
CE
FROM
DECODER
VBATT1
VCCO
PART TEMP RANGE PIN-PACKAGE
MXD1210C/D 0°C to +70°C Dice*
MXD1210CPA 0°C to +70°C 8 PDIP
MXD1210CSA 0°C to +70°C 8 SO
MXD1210CWE 0°C to +70°C 16 Wide SO
MXD1210EPA -40°C to +85°C 8 PDIP
MXD1210ESA -40°C to +85°C 8 SO
MXD1210EWE -40°C to +85°C 16 Wide SO
MXD1210MJA -55°C to +125°C 8 CERDIP
Typical Operating Circuit
Ordering Information
CEO
CEGND
1
2
8
7
VCCI
VBATT2VBATT1
TOL
VCCO
DIP/SO
TOP VIEW
3
4
6
5
MXD1210
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
N.C. N.C.
VCCI
N.C.
VBATT2
N.C.
CEO
N.C.
CE
MXD1210
WIDE SO
VCCO
N.C.
TOL
VBATT1
N.C.
N.C.
GND
Pin Configurations
19-0154; Rev 2; 11/05
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*
Contact factory for dice specifications.
Devices in PDIP and SO packages are available in both lead-
ed and lead-free packaging. Specify lead free by adding the +
symbol at the end of the part number when ordering. Lead free
not available for CERDIP package.
[VI/J XI [VI
MXD1210
Nonvolatile RAM Controller
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
(TA= TMIN to TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCI to GND ..........................................................-0.3V to +7.0V
VBATT1 to GND.....................................................-0.3V to +7.0V
VBATT2 to GND.....................................................-0.3V to +7.0V
VCCO to GND ................................................-0.3V to (VS+ 0.3V)
(VS= greater of VCCI, VBATT1, VBATT2)
Digital Input and Output
Voltages to GND.....................................-0.3V to (VCCI + 0.3V)
Continuous Power Dissipation (TA= +70°C)
8-Pin PDIP (derate 9.09mW/°C above +70°C)..............727mW
8-Pin SO (derate 5.88mW/°C above +70°C).................471mW
8-Pin CERDIP (derate 8.00mW/°C above +70°C).........640mW
16-Pin Wide SO (derate 9.52mW/°C above +70°C) .....762mW
Operating Temperature Range
C Suffix.................................................................0°C to +70°C
E Suffix..............................................................-40°C to +85°C
M Suffix ...........................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
TOL = GND 4.75 5.50
Supply Voltage VCCI TOL = VCCO 4.50 5.50 V
Input High Voltage VIH 2.2 V
Input Low Voltage VIL 0.8 V
Battery Voltage VBATT1
VBATT2 1 or 2 batteries (Note 1) 2.0 4.0 V
ELECTRICAL CHARACTERISTICS—Normal Supply Mode, TOL = VCCO
(VCCI = +4.75V to +5.5V, TOL = GND; or VCCI = +4.5V to +5.5V, TOL = VCCO; TA= TMIN to TMAX, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Current ICCI VCCO, CEO open, VBATT1 = VBATT2 = 3V 0.23 0.5 mA
MXD1210C VCCI -
0.20
MXD1210E VCCI -
0.21
Output Supply Voltage VCCO ICCO1 = 80mA (Note 2)
MXD1210M VCCI -
0.25
V
MXD1210C 80
MXD1210E 0.23 75
Output Supply Current ICCO VCCI - VCCO 0.2V (Note 2)
MXD1210M 0.23 65
mA
Input Leakage Current IIL ±1.0 µA
Output Leakage Current IOL ±1.0 µA
High-Level Output Voltage VOH IOH = -1mA 2.4 V
Low-Level Output Voltage VOL IOL = 4mA 0.4 V
TOL = GND 4.50 4.74
VCCI Trip Point VCCTP TOL = VCCO 4.25 4.49 V
[VIIJXI [VI
MXD1210
Nonvolatile RAM Controller
_______________________________________________________________________________________ 3
Note 1: Only one battery input is required. Unused battery inputs must be grounded.
Note 2: ICCO1 is the maximum average load current the MXD1210 can supply to the memories.
Note 3: ICCO2 is the maximum average load current the MXD1210 can supply to the memories in battery-backup mode.
Note 4: CEO can sustain leakage current only in battery-backup mode.
Note 5: Guaranteed by design.
Note 6: tCE max must be met to ensure data integrity on power loss.
ELECTRICAL CHARACTERISTICS—Battery-Backup Mode
(VCCI < VBATT, positive edge rate at VBATT1, VBATT2 > 0.1V/µs, TA= TMIN to TMAX, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
MXD1210C/E 2 100 nA
Quiescent Current (Note 1) IBATT VCCO, CEO open,
VCCI = 0V MXD1210M 5 µA
Output Supply Current ICCO2 VBATT - VCCO 0.2V (Notes 3, 4) 300 µA
CEO Output Voltage VOOutput open VBATT -
0.2 V
CAPACITANCE
(TA= TMIN to TMAX, unless otherwise noted.) (Note 5)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Capacitance CIN 5pF
Output Capacitance COUT 7pF
VCC POWER TIMING CHARACTERISTICS
(VCCI = +4.75V to +5.5V, TOL = GND; or VCCI = +4.5V to +5.5V, TOL = VCCO, TA= TMIN to TMAX, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
MXD1210C 5 10 20
MXD1210E 5 10 22
CE Propagation Delay tPD RL = 1kΩ, CL = 50pF
MXD1210M 5 10 25
ns
CE High to Power-Fail tPF (Note 5) 0 ns
TIMING CHARACTERISTICS
(VCCI <+4.75V to +5.5V, TOL = GND; or VCCI <+4.5V, TOL = VCCO, TA= TMIN to TMAX, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Recovery at Power-Up tREC 2520ms
tFTo out-of-tolerance condition 300
VCC Slew-Rate Power-Down tFB Tolerance to battery power 10 µs
VCC Slew-Rate Power-Up tRs
CE Pulse Width tCE (Note 6) 1.5 µs
[MAXI/III lVI/lXI/VI
MXD1210
Nonvolatile RAM Controller
4 _______________________________________________________________________________________4 _______________________________________________________________________________________
Pin Description
PIN
8-PIN PDIP/SO 16-PIN WIDE SO NAME FUNCTION
12V
CCO Backed-Up Supply to RAM
2 4 VBATT1 Battery 1 Positive Connection
3 6 TOL Tolerance Select Pin
4 8 GND Ground
59CE Chip-Enable Input
611CEO Chip-Enable Output
7 13 VBATT2 Battery 2 Positive Connection
815V
CCI 5V Power Supply to Chip
1, 3, 5, 7, 10, 12,
14, 16 N.C. No Connection. Not internally connected.
VCCI
VCCO
GND
CEO
GND
P
P
P
P
FRESHNESS-
SEAL MODE
VOLTAGE LEVEL
DETECTION
BATTERY
TEST
BATTERY
SELECT
CEO
CONTROL
N
VBATT1
VBATT2
CE
TOL
MXD1210
Figure 1. Block Diagram
[VIIJXI [VI
MXD1210
Nonvolatile RAM Controller
_______________________________________________________________________________________ 5_______________________________________________________________________________________ 5
Detailed Description
Main Functions
The MXD1210 executes five main functions to perform
reliable RAM operation and battery backup (see the
Typical Operating Circuit
and Figure 1):
1) RAM Power-Supply Switch: The switch directs
power to the RAM from the incoming supply or
from the selected battery, whichever is at the
greater voltage. The switch control uses the same
criterion to direct power to MXD1210 internal cir-
cuitry.
2) Power-Failure Detection: The write-protection
function is enabled when a power failure is
detected. The power-failure detection range
depends on the state of the TOL pin as follows:
Power-failure detection is independent of the bat-
tery-backup function and precedes it sequentially
as the power-supply voltage drops during a typi-
cal power failure.
3) Write Protection: This holds the chip-enable out-
put (CEO) to within 0.2V of VCCI or of the selected
battery, whichever is greater. If the chip-enable
input (CE) is low (active) when power failure is
detected, then CEO is held low until CE is brought
high, at which time CEO is gated high for the
duration of the power failure. The preceding
sequence completes the current RD/WR cycle,
preventing data corruption if the RAM access is a
WR cycle.
4) Battery Redundancy: A second battery is option-
al. When two batteries are connected, the
stronger battery is selected to provide RAM back-
up and to power the MXD1210. The battery-selec-
tion circuitry remains active while in the
battery-backup mode, selecting the stronger bat-
tery and isolating the weaker one. The battery-
selection activity is transparent to the user and
the system. If only one battery is connected, the
second battery input should be grounded.
5) Battery-Status Warning: This notifies the system
when the stronger of the two batteries measures
2.0V. Each time the MXD1210 is repowered (VCCI
>VCCTP) after detecting a power failure, the bat-
tery voltage is measured. If the battery in use is
low, following the MXD1210 recovery period, the
device issues a warning to the system by inhibit-
ing the second memory cycle. The sequence is
as follows:
First access: read memory location n, loc(n) = x
Second access: write memory location n,
loc(n) = complement (x)
Third access: read memory location n, loc(n) = ?
If the third access (read) is complement (x), then the
battery is good; otherwise the battery is not good.
Return to loc(n) = x following the test sequence.
Freshness-Seal Mode
The freshness-seal mode relates to battery longevity
during storage rather than directly to battery backup.
This mode is activated when the first battery is con-
nected, and is defeated when the voltage at VCCI first
exceeds VCCTP. In the freshness-seal mode, both bat-
teries are isolated from the system; that is, no current is
drained from either battery, and the RAM is not pow-
ered by either battery. This means that batteries can be
installed and the system can be held in inventory with-
out battery discharge. The positive edge rate at
VBATT1 and VBATT2 should exceed 0.1V/µs. The bat-
teries will maintain their full shelf life while installed in
the system.
Battery Backup
The
Typical Operating Circuit
shows the MXD1210 con-
nected to write-protect the RAM when VCC is less than
4.75V, and to provide battery backup to the supply.
CONDITION VCCTP RANGE (V)
TOL = GND 4.75 to 4.50
TOL = VCCO 4.50 to 4.25
[VIIJXIIM
MXD1210
Nonvolatile RAM Controller
6 _______________________________________________________________________________________
VIH
VIH
tPD
tR
tREC
VBATT - 0.2V
VCCI
CEO
CE
4.75V
4.5V
4.25V
Figure 2. Power-Up Timing Diagram
VIH
VIH
VIL
VIL
tCE
tCE
tFB
tPF
tF
tPD
VCCI
CEO
CE
4.75V
4.5V
4.25V
3V
VBATT - 0.2V
Figure 3. Power-Down Timing Diagram
[VI/JXI [VI
MXD1210
Nonvolatile RAM Controller
_______________________________________________________________________________________ 7
Chip Topography
VBATT1
VCCO
TOL
0.121"
(3.073mm)
0.080"
(2.032mm)
VCCI VBATT2
CEO
GND
CE
TRANSISTOR COUNT: 1436;
LEAVE SUBSTRATE UNCONNECTED.
go to www.maxim-ic.com/gackages EQQQQHj T o i i TOP VIEW mm; a x» *‘P TY FRONT V‘EW SIDE VIEW OTES. DkE no um INCLUDE Nam rusN. , MOLD ms» or? mmusmNs m m mm: Mm.“ (.nns"). @géthéfilI/IIJKI/VI LEADS to BE COPLANAR wme D.IDmm (.cm"). wm‘ww CONIROLUNG mMENslaN: mmNEmzs. M MEETS JEDEC Nsmz. PACKAG N = NUMBER or PINS. WM [VIIJXIIM
MXD1210
Nonvolatile RAM Controller
8 _______________________________________________________________________________________
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
SOICN .EPS
PACKAGE OUTLINE, .150" SOIC
1
1
21-0041 B
REV.DOCUMENT CONTROL NO.APPROVAL
PROPRIETARY INFORMATION
TITLE:
TOP VIEW
FRONT VIEW
MAX
0.010
0.069
0.019
0.157
0.010
INCHES
0.150
0.007
E
C
DIM
0.014
0.004
B
A1
MIN
0.053A
0.19
3.80 4.00
0.25
MILLIMETERS
0.10
0.35
1.35
MIN
0.49
0.25
MAX
1.75
0.050
0.016L0.40 1.27
0.3940.386D
D
MINDIM
D
INCHES
MAX
9.80 10.00
MILLIMETERS
MIN MAX
16 AC
0.337 0.344 AB8.758.55 14
0.189 0.197 AA5.004.80 8
N MS012
N
SIDE VIEW
H 0.2440.228 5.80 6.20
e 0.050 BSC 1.27 BSC
C
HE
eBA1
A
D
0-8
L
1
VARIATIONS:
go to wwwmaxim-imoanackages «D1 W W e NIL/0 :3“ 1L3: ._Efl D 1 km!» 1 1 1 \_I A A2 — L A1 ’15' 1‘ -HT INCHES MILLIMETERS INCHES MILLIMETERS MIN MAX MIN MAX MIN MAX MIN MAX N 115101 A --- 0180 --- 4.572 D 0.348 0.390 8.84 9.91 8 AB A1 0.015 ,7, 038 ,7, D 0.735 0.765 18.67 19.43 14 AC A2 0125 0.175 3.18 4.45 D 0.745 0.765 18.92 19.43 16 AA A3 0055 0080 1.40 2.03 D 0.885 0.915 22.48 23.24 18 AD B 0.015 0022 0381 0.56 D 1.015 1045 25 78 26.54 20 AE B1 0.045 0065 1.14 1.65 D 1.14 1.265 28.96 32.13 24 AF C 0.008 0.014 0.8 0.355 D 1.360 1.380 34.54 35.05 28 *5 D1 0.005 0080 0.13 2.03 E 0300 0.325 7.62 8.26 ”DIES: E1 0.240 0.310 6.10 7.87 ‘2 33331113111151211341115.1933? e 0100 123:. 254 Egg m EXCEED 15.. (005') eA 0.300 BSC 7.62 BSC 3: SEEIEDEEIINE‘E ‘¥§&1§LEN'AEI§LH‘§SL“ SE 0400 BSC. 10.16 ESC. W ”EVE TABLE L 0.115 10.150 e921|3 81 2‘ S‘Z‘LJGSEEE SEDEENQ‘U'”55“ MQKDMIPACKAGE FAMILY DUTLINE PDIP 300] [2150043 D mm... mm... m wmxuvl
MXD1210
Nonvolatile RAM Controller
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 _____________________
9
© 2005 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
PDIPN.EPS

Products related to this Datasheet

IC CNTRLR NONVOLATILE RAM 8-SOIC
Available Quantity: 301
Unit Price: 10.3
IC CNTRLR NVRAM 8-DIP
Available Quantity: 172
Unit Price: 10.3
IC CNTRLR NVRAM 8-SOIC
Available Quantity: 21
Unit Price: 10.3
IC CNTRLR NONVOLATILE RAM 8-SOIC
Available Quantity: 0
Unit Price: 0
IC CNTRLR NONVOLATILE RAM 16SOIC
Available Quantity: 0
Unit Price: 0
IC CNTRLR NONVOLATILE RAM 8-DIP
Available Quantity: 0
Unit Price: 0
IC CTRLR NV RAM CMOS LOPWR 8SOIC
Available Quantity: 0
Unit Price: 0
IC CNTRLR NVRAM 16-SOIC
Available Quantity: 0
Unit Price: 12.15
IC CNTRLR NVRAM 8-SOIC
Available Quantity: 0
Unit Price: 7.29414
IC CNTRLR NVRAM 8-SOIC
Available Quantity: 0
Unit Price: 6.63304
MXD1210 NV RAM CONTROLLER
Available Quantity: 0
Unit Price: 0
MXD1210 NV RAM CONTROLLER
Available Quantity: 0
Unit Price: 0
MXD1210 NV RAM CONTROLLER
Available Quantity: 0
Unit Price: 0
MXD1210 NONVOLATILE RAM CONTROLL
Available Quantity: 0
Unit Price: 0
MXD1210 NONVOLATILE RAM CONTROLL
Available Quantity: 0
Unit Price: 0
MXD1210 NONVOLATILE RAM CONTROLL
Available Quantity: 0
Unit Price: 0