STWA48N60DM2 Datasheet by STMicroelectronics

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December 2016
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This is information on a product in full production.
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STWA48N60DM2
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
RDS(on) max.
ID
STWA48N60DM2
600 V
0.079 Ω
40 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STWA48N60DM2
48N60DM2
TO-247 long leads
Tube
AM15572v1_no_tab
D(2)
G(1)
S(3)
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-247 long leads package information ........................................... 9
5 Revision history ............................................................................ 11
STWA48N60DM2
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
40
A
Drain current (continuous) at Tcase = 100 °C
25
IDM(1)
Drain current (pulsed)
160
A
PTOT
Total dissipation at Tcase = 25 °C
300
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area
(2) ISD ≤ 40 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V
(3) VDS ≤ 480 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.42
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(Pulse width limited by Tjmax)
7
A
EAR
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
950
mJ
Electrical characteristics
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2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C(1)
100
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 20 A
0.065
0.079
Ω
Notes:
(1)Defined by design, not subject to production test
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
ID = 0 A
-
3250
-
pF
Coss
Output capacitance
-
142
-
Crss
Reverse transfer capacitance
-
4.5
-
Coss
eq.(1)
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
258
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID= 0 A
-
4
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 40 A,
VGS = 10 V
(see Figure 14: "Test circuit
for gate charge behavior")
-
70
-
nC
Qgs
Gate-source charge
-
18
-
Qgd
Gate-drain charge
-
28
-
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
STWA48N60DM2
Electrical characteristics
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Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 20 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times" and Figure 18:
"Switching time waveform")
-
27
-
ns
tr
Rise time
-
27
-
td(off)
Turn-off delay time
-
131
-
tf
Fall time
-
9.8
-
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
40
A
ISDM(2)
Source-drain current
(pulsed)
-
160
A
VSD(3)
Forward on voltage
VGS = 0 V, ISD = 40 A
-
1.6
V
trr
Reverse recovery time
ISD = 40 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
140
ns
Qrr
Reverse recovery charge
-
0.7
µC
IRRM
Reverse recovery current
-
10
A
trr
Reverse recovery time
ISD = 40 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
256
ns
Qrr
Reverse recovery charge
-
2.5
µC
IRRM
Reverse recovery current
-
20
A
Notes:
(1)Limited by maximum junction temperature
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 μA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
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STWA48N60DM2
Electrical characteristics
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Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source- drain diode forward characteristics
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Test circuits
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3 Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
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STWA48N60DM2
Package information
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 TO-247 long leads package information
Figure 19: TO-247 long leads package outline
Package information
STWA48N60DM2
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Table 10: TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
3.60
3.70
Q
5.60
6.00
S
6.05
6.15
6.25
STWA48N60DM2
Revision history
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5 Revision history
Table 11: Document revision history
Date
Revision
Changes
20-Dec-2016
1
First release
STWA48N60DM2
12/12
DocID030156 Rev 1
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