M(A,X,XL)PLAD7.5KPxxA(e3) Datasheet by Microchip Technology

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o Microsemi 1% hugfl/vmwmicmsemmom Hi-Rel Non-Hermetic Produc‘s Figure 1 Msc — Lawrence Msc — Ireland MicroNote 132 www.microsemi.com
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
Available 7.5 kW, Unidirectional and Bidirectional
TVS Protection Device
High-Reliability
screening available in
reference to
MIL-PRF-19500
DESCRIPTION
These 7.5 kW rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided
with design features to minimize thermal resistance and cumulative heating. These devices have the
ability to clamp dangerous high voltage, short term transients such as those produced by electrostatic
discharge, radiated RFI, inductive load dumps, and the secondary effects of lightning strikes before they
reach sensitive component regions of a circuit. Typical applications include lightning and automotive load
dump protection. They are particularly effective at meeting the multi-stroke lightning standard RTCA DO-
160, section 22 for aircraft design. The all-metal bottom of this space-efficient, low profile package
provides a very low thermal impedance path for heat to escape to the mounting substrate, keeping the
junction temperature low. The PLAD7.5KP is offered with standoff voltages (Vwm) from 10 to 48 volts in
either unidirectional or bidirectional versions. For more information on PLAD packaged products and our
broad range of TVS solutions, please see our website.
Tested in
accordance with the
requirements of
AEC-Q101
mini-PLAD
(The cathode is the heatsink
under the body of this device.)
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix)
High-reliable, with wafer fabrication and assembly lot traceability
All parts 100% surge tested
Low profile surface mount package
Optional upscreening is available with various screening and conformance inspection options based
on MIL-PRF-19500. Refer to Hi-Rel Non-Hermetic Products brochure on our web site for more
details on the screening options
Suppresses transients up to 7,500 W @ 10/1000 μs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020
3σ lot norm screening performed on standby current (ID)
RoHS compliant (2002/95/EC) devices available
Halogen free (IEC 61249-2-21)
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1,2,3,4,5: MPLAD7.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1,2,3,4: MPLAD7.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:
Class 2,3: MPLAD7.5KP10A to 48CA
Class 4: MPLAD7.5KP10A to 26CA
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*:
Level 1,2,3,4,5: MPLAD7.5KP10A to 48CA
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*:
Level 1, 2, 3: MPLAD7.5KP10A to 48CA
Level 4: MPLAD7.5KP10A to 14CA
Longer transient pulse width capability if well heat sunk for automotive load dump
IPP rating of 97 amps to 441 amps
VWM rating of 10 volts to 48 volts
V(BR)(min) range of 11.1 volts to 53.3 volts
VC(MAX) rating of 17 volts to 77.4 volts
*See MicroNote 132 for further temperature derating selection.
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 1 of 6
o Microsemi Moles: Pad—IBM) Figuves 1 and 2A Package Dimensions Reliabilily Level RoHS Comgliance Folarilx Hi-Rel Non-Hermetic Product Portfolio) Reverse Slandoff Vollage Packs e Desi nalion Ppp Rating (fl) Plastic
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
MAXIMUM RATINGS @ 25 oC unless otherwise specified
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +150
ºC/W
Thermal Resistance Junction-to-Ambient (1)
RӨJA
50
ºC/W
Thermal Resistance Junction-to-Case
RӨJC
1.5
ºC/W
Peak Pulse Power @ 10/1000 µs (2)
PPP
7,500
W
tclamping (0 volts to V(BR) min) Unidirectional
Bidirectional
<100
<5
ps
ns
Forward Clamping Voltage @ 400 Amps (3)
VFS
2.5
V
Forward Surge Current (3)
IFSM
500
A
Solder Temperature @ 10 s
260
ºC
Rated Average Power dissipation
(5)
TA = 25 °C
TC = 100 °C
PM(AV) 2.5
(1)
33.3
(4)
W
W
Notes: 1. When mounted on FR4 PC board with recommended mounting pad (see pad layout).
2. Also see Figures 1 and 2. With impulse repetition rate (duty factor) of 0.05% or less.
3. At 8.3 ms half-sine wave (unidirectional devices only).
4. Case temperature controlled on heat sink as specified.
5. See MicroNote 134 for derating PPP when also applying steady-state power.
MECHANICAL and PACKAGING
CASE: Epoxy, meets UL94V-0
TERMINALS: Tin/lead or matte-tin (fully RoHS compliant) plating
MARKING: Part number
DELIVERY option: Tape and reel (13 inch)
See Package Dimensions on last page.
PART NOMENCLATURE
M PLAD 7.5K P 10 CA (e3)
Reliability Level*
M
MA
MX
MXL
*(see Hi-Rel Non-Hermetic
Product Portfolio)
Package Designation
PPP Rating (W)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Polarity
A = Unidirectional
CA = Bidirectional
Reverse Standoff Voltage
Plastic
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 2 of 6
| OMicrosemi —
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
SYMBOLS & DEFINITIONS
Symbol
Definition
α
V(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V(BR).
ID
Standby Current: The current through the device at rated stand-off voltage.
IPP Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
VC
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
VWM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
DEVICE*
REVERSE
STAND-
OFF
VOLTAGE
VWM
BREAKDOWN
VOLTAGE V(BR)
V(BR) @ I(BR)
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM PEAK
PULSE
CURRENT
(FIG. 2)
IPP
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V(BR)
αV(BR)
Volts
Volts
mA
Volts
µA
Amps
mV/°C
MPLAD7.5KP10A(e3)
10
11.1 - 12.3
5
17.0
15
441
9
MPLAD7.5KP11A(e3)
11
12.2 - 13.5
5
18.2
10
412
10
MPLAD7.5KP12A(e3)
12
13.3 - 14.7
5
19.9
10
377
11
MPLAD7.5KP13A(e3)
13
14.4 - 15.9
5
21.5
10
349
12
MPLAD7.5KP14A(e3)
14
15.6 - 17.2
5
23.2
10
323
13
MPLAD7.5KP15A(e3)
15
16.7 - 18.5
5
24.4
10
307
15
MPLAD7.5KP16A(e3)
16
17.8 - 19.7
5
26.0
10
288
16
MPLAD7.5KP17A(e3)
17
18.9 - 20.9
5
27.6
10
272
18
MPLAD7.5KP18A(e3)
18
20.0 - 22.1
5
29.2
10
257
19
MPLAD7.5KP20A(e3)
20
22.2 - 24.5
5
32.4
10
231
22
MPLAD7.5KP22A(e3)
22
24.4 - 26.9
5
35.5
10
211
24
MPLAD7.5KP24A(e3)
24
26.7 - 29.5
5
38.9
10
193
27
MPLAD7.5KP26A(e3)
26
28.9 - 31.9
5
42.1
10
178
29
MPLAD7.5KP28A(e3)
28
31.1 - 34.4
5
45.5
10
165
30
MPLAD7.5KP30A(e3)
30
33.3 - 36.8
5
48.4
10
155
35
MPLAD7.5KP33A(e3)
33
36.7 - 40.6
5
53.3
10
141
38
MPLAD7.5KP36A(e3)
36
40.0 - 44.2
5
58.1
10
129
40
MPLAD7.5KP40A(e3)
40
44.4 - 49.1
5
64.5
10
116
45
MPLAD7.5KP43A(e3)
43
47.8 - 52.8
5
69.4
10
108
49
MPLAD7.5KP45A(e3)
45
50.0 55.3
5
72.7
10
103
51
MPLAD7.5KP48A(e3)
48
53.3 58.9
5
77.4
10
97
54
* See part nomenclature for additional screening prefixes.
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 3 of 6
O Microsemi 1 000 500 200 100 50 20 10 5.0 2.0 1.0 100 ns 1 us 10 us 100 us 1 ms 10 ms Peak Pulse Power vs. Pulse Time —>l‘—t" 100 ! Peak Value lpp / Half Value IF?" 50 10 x 1000 Wave form/ \ as defined by RIEIA. I I I 0 1 2 3 W
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
GRAPHS
tp – Pulse Time sec
FIGURE 1
Peak Pulse Power vs. Pulse Time
(to 50% of exponentially decaying pulse)
Test waveform parameters: tr = 10 µs, tp = 1000 µs
FIGURE 2
Pulse Waveform
I
PP
Peak Pulse Current - % I
PP
P
PP
Peak Pulse Power kW
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 4 of 6
o Microsemi 1 00 % \ Peak pu‘se power (Single pulse) 75 \ 50 Average power 25 0 0 50 'I 00 1 50 200 Derating Curve
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
GRAPHS (continued)
TL Lead Temperature ºC
FIGURE 3
Derating Curve
PPP Peak Pulse Power - % PPP
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 5 of 6
POLARITY SYMBOL /FOR UNIDIRECTION ONLY A1 «1‘— D
MPLAD7.5KP10A(e3)
MPLAD7.5KP48CA(e3)
PACKAGE DIMENSIONS
PAD LAYOUT
Ref.
Dimensions
Inch
Millimeters
Min
Max
Min
Max
A1
0.337
0.353
8.56
8.97
A2
0.277
0.293
7.04
7.44
B
0.117
0.133
2.97
3.38
C
0.436
0.452
11.07
11.48
D
0.092
0.108
2.34
2.74
G
0.062
0.078
1.57
1.98
H
0.022
0.038
0.56
0.96
J
0.008
0.012
0.20
0.30
Ref.
Dimensions
Inch
Millimeters
Typical
Typical
A
0.353
8.97
B
0.117
2.97
C
0.078
1.98
D
0.033
0.84
RF01084, Rev B (24/6/15) ©2015 Microsemi Corporation Page 6 of 6

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