SFAS801G - SFAS808G Datasheet by Taiwan Semiconductor Corporation

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E SFA8801G - SFA3808G Sup K 69 Pia-Free R6Hs COMPUANT PIN 10— K —o PINZW HEATSINK MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SFAS SFAS SFAS SFAS SFAS SFAS SFAS SFAS
SFAS801G - SFAS808G
CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- High efficiency, low VF
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1405074 Version: M15
80 60
Maximum reverse recovery time (Note 1) 35
Maximum instantaneous forward voltage
I
F
= 8 A
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Typical thermal resistance 2.2
I
R
10 μA
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=100°C 400
Typical junction capacitance (Note 2)
V
F
V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
125 A
0.95 1.3 1.7
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 8
SFAS
807G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL SFAS
801G
SFAS
802G
SFAS
803G
SFAS
804G
SFAS
805G
SFAS
806G
SFAS
808G
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
TO-263AB (D
2
PAK)
Case: TO-263AB (D
2
PAK)
Polarity: As marked
Weight: 1.33 g (approximately)
Taiwan Semiconductor
8A, 50V - 600V Surface Mount Su
p
er Fast Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
5 ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING EXAMPLE PART NO. PACKING CODE
PART NO.
*: Optional available
PART NO.
(TA=25 unless otherwise noted)
Document Number: DS_D1405074 Version: M15
HRN G
AEC-Q101 qualified
Green compound
SFAS801GHRNG SFAS801G
RATINGS AND CHARACTERISTICS CURVES
Note 1: "x" defines voltage from 50V (SFAS801G) to 600V (SFAS808G)
EXAMPLE
PREFERRED P/N PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
SFAS80xG
(Note 1) HRN G800 / 13" Paper reel
MN 800 / 13" Plastic reel
D
2
PAK
SFAS801G - SFAS808G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
0
2
4
6
8
10
0 25 50 75 100 125 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
30
60
90
120
150
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=100°C
TJ=25°C
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
SFAS807G-SFAS808G
Pulse Width=300μs
1% Duty Cycle
SFAS805G-SFAS806G
SFAS801G-SFAS804G
FIG.6 REVERSE RECOVERV TIME CHARACTER‘ST‘C AND TEST C‘RCUVT D‘AGRAM sun mu ‘ ‘ ‘ ‘ ‘ NOMNDUCTWE NoMNnumvE « .05»: 1-) : nu ‘ ("y FULSE fl 3 SIM: osmmom appvon \ngz) 4725A [" r ‘${ \ OSC‘LLOSCOPE ' ‘ ;~ NON arm I‘) ‘ r‘ wuucms \ \ NOTES 1,RxseTme=7nsmax \npAlmpedame: .2 4 “A ~ ‘ ‘ ‘ ‘ ‘ megamzsz 2 Rwsshmsmnnsmax Scmselmpeflance: 50mm <7a4> T T A B EF L LiiT AAD __J_ «'4» CG 5 ‘i'W W PH
Min Max Min Max
A-10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1405074 Version: M15
MARKING DIAGRAM
F 9.5 0.374
G 2.5 0.098
D 3.5 0.138
E 16.9 0.665
B 8.3 0.327
C 1.1 0.043
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
A 10.8 0.425
SFAS801G - SFAS808G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
TO-263AB (D
2
PAK)
40
50
60
70
80
90
100
1 10 100 1000
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
SFAS805G-SFAS808G
SFAS801G-SFAS804G
f=1.0MHz
Vsig=50mVp-p
SFA3801G - SFAS8OBG Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405074 Version: M15
SFAS801G - SFAS808G
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

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