RSFAL - RSFML Datasheet by Taiwan Semiconductor Corporation

I’V vaFroe ¢ RoHS COMPLIANT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RSF RSF RSF RSF RSF RSF RSF
CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- High temperature metallurgically bonded construction
- Fast switching for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
FAL FBL FDL FGL FJL FKL FML
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
C
J
pF
t
rr
250 ns
T
J
°C
T
STG
°C
Document Number: DS_D1410008 Version: L15
T
J
=125°C
RSFAL - RSFML
Taiwan Semiconductor
0.5A, 50V - 1000V Surface Mount Fast Recover
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: Sub SMA
Sub SMA
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
RSF
JL
10
I
R
5
RSF
ML UNIT
RSF
KL
RSF
BL
RSF
DL
RSF
GL
Marking code
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL RSF
AL
Note 1: Pulse test with PW=300μs, 1% duty cycle
Maximum reverse recovery time (Note 3)
Typical thermal resistance R
θJC
R
θJA
μA
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.5
4
50
Typical junction capacitance (Note 2)
Maximum reverse current @ rated V
R
T
J
=25°C
A
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A V
F
1.3 V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
150 500
32
150 °C/W
Operating junction temperature range
Storage temperature range - 55 to +150
- 55 to +150
5 ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING EXAMPLE PREFERRED PART NO. PACKING CODE
PART NO.
PART NO.
Document Number: DS_D1410008 Version: L15
AEC-Q101 qualified
Green compound
RSFMLHRUG RSFML H RU G
Note 1: "x" defines voltage from 50V (RSFAL) to 1000V (RSFML)
EXAMPLE
PREFERRED
PART NO.
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
RH Sub SMA 10,000 / 13" Paper reel (12mm tape)
MH Sub SMA 10,000 / 13" Plastic reel (12mm tape)
R2 Sub SMA 7,500 / 13" Paper reel (12mm tape)
M2 Sub SMA 7,500 / 13" Plastic reel (12mm tape)
R3 Sub SMA 1,800 / 7" Plastic reel (12mm tape)
RF Sub SMA 3,000 / 7" Plastic reel (12mm tape)
RQ Sub SMA 10,000 / 13" Paper reel (8mm tape)
MQ Sub SMA 10,000 / 13" Plastic reel (8mm tape)
RT Sub SMA 7,500 / 13" Paper reel (8mm tape)
MT Sub SMA 7,500 / 13" Plastic reel (8mm tape)
PACKING
RSFxL
(Note 1) H
RU
G
Sub SMA 1,800 / 7" Plastic reel (8mm tape)
RV Sub SMA 3,000 / 7" Plastic reel (8mm tape)
RATINGS AND CHARACTERISTICS CURVES (T
A
=25°C unless otherwise noted)
RSFAL - RSFML
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE PACKING CODE
SUFFIX
PACKAGE
0
0.1
0.2
0.3
0.4
0.5
0.6
0 255075100125150175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
2
4
6
8
10
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.001
0.01
0.1
1
10
0 20406080100
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=100°C
TJ=25°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
FIG.6— REVERSE RECOVERY TIME CHARACTERIST‘C AND TEST C‘RCUIT D‘AGRAM 5m um NONINDUCWE NomNDucnvE F m ‘+ M#\ — com \ 7 BUT \ ‘0 D ; sovuc tappm) 7n 25A l" y ‘11 "k OSCILLOSCOPE :~ NON / (NOTE 1', ('1 9 woucnvg ~ “ NOIES 1. Rxse Twme=7ns max Input Impedance: = 4 0“ 1 megohm 22p! 2 Rwse nmemnnsmax Sourse Impedance: 50 mm: Cathode em DETAIL 'A'. SCALE720M ¢EH
Min Max Min Max
B 1.70 1.90 0.067 0.075
C 2.70 2.90 0.106 0.114
D 0.16 0.30 0.006 0.012
E 1.23 1.43 0.048 0.056
F 0.80 1.20 0.031 0.047
G 3.40 3.80 0.134 0.150
H 2.45 2.60 0.096 0.102
I 0.35 0.85 0.014 0.033
J 0.00 0.10 0.000 0.004
P/N = Marking Code
G = Green compound Code
YW = Date Code
F = Factory Code
Document Number: DS_D1410008 Version: L15
RSFAL - RSFML
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
Sub SMA
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
A 1.4 0.055
B 1.2 0.047
C 3.1 0.122
MARKING DIAGRAM
D 1.9 0.075
E 4.3 0.169
1
10
1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
5 RSFAL - RSFML SEMICONDUCTO Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
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indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410008 Version: L15
RSFAL - RSFML
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,