FR151G - FR157G Datasheet by Taiwan Semiconductor Corporation

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y 6 ¢ ' RoHS COMPLIANT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FR FR FR FR FR FR FR
CREAT BY ART
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
250 ns
C
J
pF
R
θJA
°C/W
T
J
°C
T
STG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D0000068 Version: H15
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
FR151G - FR157G
Taiwan Semiconductor
1.5A, 50V - 1000V Glass Passivated Fast Recover
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-204AC (DO-15) DO-204AC (DO-15)
Weight: 0.4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL FR
151G
FR
152G
FR
153G
FR
154G
FR
155G
FR
156G
FR
157G UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
50 A
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A V
F
1.3 V
I
R
5μA
100
Maximum reverse recovery time (Note 2) 150 500
Typical junction capacitance (Note 3) 20
Typical thermal resistance 60
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
E "1‘ FR151G - FR157G Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING EXAMPLE PREFERRED PART NO. PACKING CODE
CREAT BY ART
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D0000068 Version: H15
AEC-Q101 qualified
Green compound
PREFERRED
PART NO.
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
FR157GHA0G FR157G H A0 G
3,500 / 13" Paper reel
B0 DO-15 1,000 / Bulk packing
Note 1: "x" defines voltage from 50V (FR151G) to 1000V (FR157G)
EXAMPLE
PACKAGE PACKING
FR15xG
(Note 1) H
A0
G
DO-15 1,500 / Ammo box
R0 DO-15
RATINGS AND CHARACTERISTICS CURVES
FR151G - FR157G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE PACKING CODE
SUFFIX
(*)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0 255075100125150
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (°C)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0
10
20
30
40
50
60
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25°C
TJ=75°C
TJ=125°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300us
1% Duty Cycle
FR151 G - FR157G Taiwan Semiconductor FIG.6 REVERSE RECOVERY TIME CHARACTER‘ST‘C AND TEST CIRCUIT D‘AGRAM 5m Ion NONINDUCTWE NON‘NDUCTIVE “. w .* y’»’/\—/ ,w— .n 5A ‘ (-1 ; DUT (‘1 PuLSE o : 50W GENERATOR 2) (swam) 4125A {NOTE (-1 fl ‘OSCILLOSCOPE §NON k; NDIE1 M {.INDUCTIVE ( ’ NOTES 1 Rusefimeflnsmax Inpm Impedance: 4 ”A 1 megnhm 22m 2. Rise Fmeflflns max. Samse \mpedance: 50 arms
CREAT BY ART
Min Max Min Max
A 2.60 3.60 0.102 0.142
B 0.70 0.90 0.028 0.035
C 25.40 - 1.000 -
D 5.80 7.60 0.228 0.299
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D0000068 Version: H15
FR151G - FR157G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-204AC (DO-15)
DIM. Unit (mm) Unit (inch)
MARKING DIAGRAM
1
10
100
1 10 100
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
5- FR151G - FR157G SEMICONDUCTO Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D0000068 Version: H15
FR151G - FR157G
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

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