DBLS151G - DBLS159G Datasheet by Taiwan Semiconductor Corporation

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DBLS151G - DBLS159G 9 gym a c , ./ ~ RoHS COMPLIANT — + _ + ‘ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
DBLS151G - DBLS159G
CREAT BY ART
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 1200 1400 V
V
RMS
35 70 140 280 420 560 700 840 980 V
V
DC
50 100 200 400 600 800 1000 1200 1400 V
I
F(AV)
A
I
2
t A
2
s
T
J
°C
T
STG
°C
Document Number: DS_D1310042 Version: L15
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
DBLS
MECHANICAL DATA
Case: Molded plastic body
Taiwan Semiconductor
1.5A, 50V - 1400V Glass Passivated Brid
g
e Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
Polarity: Polarity as marked on the body
Weight: 0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL DBLS
151G
DBLS
152G
DBLS
153G
DBLS
154G
DBLS
155G
DBLS
156G
DBLS
157G
DBLS
158G
DBLS
159G UNIT
Maximum repetitive peak reverse voltage
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
50
R
θJL
R
θJA
15
40 °C/W
A
Rating for fusing (t<8.3ms) 10.3
Maximum instantaneous forward voltage (Note 1)
I
F
= 1.5 A V
F
1.1 1.25
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
I
R
2
500 μA
Typical thermal resistance
Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING PACKING CODE PACKAGE PACKING EXAMPLE PART NO. PACKING CODE SUFFIX
PART NO.
Note 1: "x" defines voltage from 50V (DBLS151G) to 1400V (DBLS159G)
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1310042 Version: L15
DBLS157GHRDG DBLS157G
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
HRD G
AEC-Q101 qualified
Green compound
PACKING
CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
HC1 GDBLS
50 / TUBE
RD
DBLS151G - DBLS159G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
DBLS15xG
(Note 1) 1,500 / 13" Paper reel
RATINGS AND CHARACTERISTICS CURVES
EXAMPLE
PREFERRED P/N
0
0.5
1
1.5
2
0 20 40 60 80 100 120 140 160
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE (°C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
10
20
30
40
50
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25°C
TJ=125°C
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
DBLS151G - DBLS157G
DBLS158G - DBLS159G
Taiwan Semiconductor
Min Max Min Max
A 5.00 5.20 0.197 0.205
B 1.02 1.20 0.040 0.047
C 8.13 8.51 0.320 0.335
D 2.40 2.60 0.094 0.102
E 9.80 10.30 0.386 0.406
F 6.20 6.50 0.244 0.256
G 0.22 0.33 0.009 0.013
H 1.02 1.53 0.040 0.060
I 0.076 0.33 0.003 0.013
J 3.90 4.10 0.154 0.161
Symbol
A
B
C
D
E
F
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1310042 Version: L15
DBLS151G - DBLS159G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
DBLS
2.6
9.2
MARKING DIAGRAM
SUGGESTED PAD LAYOUT
Unit (mm)
2.3
1.3
6.9
11.5
Unit (inch)
0.091
0.051
0.272
0.453
0.102
0.362
1
10
100
1 10 100
CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
$- DBLS151G - DBLS159G ssmcounucw - Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1310042 Version: L15
DBLS151G - DBLS159G
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

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