1N4148, 4448 Datasheet by NXP USA Inc.

View All Related Products | Download PDF Datasheet
nexpefla http://www.nxD.com http://www.DhiliDs.com/ httD://www.semiconductors.philips.com/ htt : www.nex eria.com salesaddressesQneer com
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
rounded by Pmps
DATA SHEET
Product data sheet
Supersedes data of 2002 Jan 23 2004 Aug 10
DISCRETE SEMICONDUCTORS
1N4148; 1N4448
High-speed diodes
M3D17
6
2004 Aug 10 2
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
FEATURES
Hermetically sealed leaded glass SOD27 (DO-35)
package
High switching speed: max. 4 ns
General application
Continuous reverse voltage: max. 100 V
Repetitive peak reverse voltage: max. 100 V
Repetitive peak forward current: max. 450 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar technology, and encapsulated in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
MARKING
TYPE NUMBER MARKING CODE
1N4148 1N4148PH or 4148PH
1N4448 1N4448
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM246
ka
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
1N4148 hermetically sealed glass package; axial leaded; 2 leads SOD27
1N4448
2004 Aug 10 3
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 100 V
VRcontinuous reverse voltage 100 V
IFcontinuous forward current see Fig.2; note 1 200 mA
IFRM repetitive peak forward current 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs4 A
t = 1 ms 1 A
t = 1 s 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 500 mW
Tstg storage temperature 65 +200 °C
Tjjunction temperature 200 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
1N4148 IF = 10 mA 1 V
1N4448 IF = 5 mA 0.62 0.72 V
IF = 100 mA 1 V
IRreverse current VR = 20 V; see Fig.5 25 nA
VR = 20 V; Tj = 150 °C; see Fig.5 50 µA
IRreverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 3µA
Cddiode capacitance f = 1 MHz; VR = 0 V; see Fig.6 4pF
trr reverse recovery time when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
4ns
Vfr forward recovery voltage when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
2.5 V
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
2004 Aug 10 4
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
GRAPHICAL DATA
0 100 200
300
200
0
100
mbg451
Tamb (°C)
IF
(mA)
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
101
104
102103
10
1
10 m" 1 0’2 mo 7‘ (‘ C) 2004 Aug 10
2004 Aug 10 5
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
0 100 Tj (°C) 200
103
102
101
102
10 (1)
1
IR
(µA)
mgd290
(2)
Fig.5 Reverse current as a function of junction
temperature.
(1) VR = 75 V; typical values.
(2) VR = 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
LR a K5 T— 2004 Aug 10
2004 Aug 10 6
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
tr
t
tp
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k 450
D.U.T.
MGA882
Vfr
t
output
signal
V
NXP Semiconductors High-speed diodes PACKAGE OUTLINE Herme‘ically sealed glass package; ax DIMENSIONS(mm are me original dimensions) n D G1 L “NIT max. max. max. min. mm D 56 I 85 A 25 25 4 Nate 1 The markmg band \ndlca‘es me camode OUTLINE REFERENCES ““5“?" IEc JEDEC JEITA $0027 A24 0035 3040 E © W 2004 Aug 10
2004 Aug 10 7
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
05-12-22
Hermetically sealed glass package; axial leaded; 2 leads SOD2
7
UNIT b
max.
mm 0.56
D
max.
G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2004 Aug 10 8
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
founded by PHILIPS
NXP Semiconductors
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541

Products related to this Datasheet

DIODE GEN PURP 100V 200MA ALF2
Available Quantity: 0
Unit Price: 0
DIODE GEN PURP 100V 200MA ALF2
Available Quantity: 0
Unit Price: 0
DIODE GEN PURP 100V 200MA ALF2
Available Quantity: 0
Unit Price: 0
DIODE GEN PURP 100V 200MA ALF2
Available Quantity: 0
Unit Price: 0
DIODE GEN PURP 100V 200MA DO35
Available Quantity: 0
Unit Price: 0
RECTIFIER DIODE
Available Quantity: 0
Unit Price: 0
RECTIFIER DIODE
Available Quantity: 0
Unit Price: 0
RECTIFIER, 0.2A, 100V
Available Quantity: 0
Unit Price: 0