Reference for High Performance RF Products Brochure Datasheet by Ampleon USA Inc.

View All Related Products | Download PDF Datasheet
A PLEON
24/7 RF
Reference Book
for High Performance
RF Products
Version 1 - 2016
Ampleon is a young and innovative company with
50 years of experience in RF Power.
Our name, derived from “amplify” (=enhance) and
“eon” (=eternity), reflects the products we stand
for and our commitment to “Amplify the future
of RF Power.
Solutions for a Variety of Segments
We are a leading company in the segments of Mobile
Broadband; Broadcast; Industrial, Scientific & Medical,
Air Traffic Control and Aerospace & Defense (LDMOS).
Furthermore, our technology and drive in innovation have
defined a new market segment for controlling heat and
power: RF Energy, which enables us to improve the white
goods and industrial landscape with sustainable and overall
higher efficiency. Given our comprehensive line-up, we
have set-out to exploit the full potential of data and energy
transfer in RF.
Global Footprint and Customer Proximity
With our headquarters in Nijmegen/Netherlands and
more than 1.250 employees worldwide, we are dedicated
to creating optimal value for our customers. In more than
15 locations around the globe our international team of
experts is always close to our customers and amplified
by our core values of Focus, Excellence and Velocity. Our
intention is to always bring our customers a significant step
further with the help of outstanding RF power solutions.
Technology and Innovations
We leverage leading edge process technologies for higher
performance (GaN, LDMOS) and cost-efficiency to deliver
a leading portfolio of options for RF Power. Our product
consistency is unprecedented and we drive innovations
in traditional as well as new application areas.
Comprehensive Support
We build on decades of RF leadership and related
application know-how. Our customers rely on our dedicated
experts to help them solve their design challenges.
We value high-quality long-term partnerships with our
customers and thus create a clear competitive advantage.
The Leading Global
Partner in RF Power
Amplify the future
224/7 RF - Version 1 - 2016
24/7 RF Web Page
www.ampleon.com/24-7rf
The first-ever 24/7 RF
24/7 RF is a synonym for our dedication
to RF Power: 24 hours, 7 days a week.
The first edition of this reference book not only
includes our recommended product portfolio
but also links it to numerous applications it is
best suited for. It features product highlights,
describes technologies, reveals latest trends,
shows explanatory diagrams, lists features
and types, packaging and packing data.
Beyond, you will find information about design
support, cross references and replacements.
We are convinced that 24/7 RF is the ultimate guide
to anything you need to know about Ampleon’s
High Performance RF products.
Enjoy reading!
324/7 RF - Version 1 - 2016
1. RF Applications ..............................................................................................................................................................................................................................................7
1.1 Mobile Broadband .....................................................................................................................................................................................................................................7
1.1.1 Base Stations (all cellular standards and frequencies) ..................................................................................................7
1.1.2 Repeater .......................................................................................................................................................................................................................................... 10
1.1.3 Small Cells ..................................................................................................................................................................................................................................... 11
1.2 Broadcast .............................................................................................................................................................................................................................................................13
1.2.1 FM/HDR/DAB Radio........................................................................................................................................................................................................14
1.2.2 UHF/D-TV ....................................................................................................................................................................................................................................... 15
1.2.3 VHF/D-TV ........................................................................................................................................................................................................................................ 16
1.3 Industrial, Scientific and Medical (ISM) ................................................................................................................................................................ 19
1.3.1 Instrumentation ..................................................................................................................................................................................................................20
1.3.2 Medical and Industrial Imaging ....................................................................................................................................................................20
1.3.3 CO2 Laser Exciters and Plasma Generators ................................................................................................................................20
1.3.4 Particle Accelerators .....................................................................................................................................................................................................20
1.4 RF Energy ............................................................................................................................................................................................................................................................. 23
1.4.1 RF Cooking....................................................................................................................................................................................................................................25
1.4.2 RF Lighting ....................................................................................................................................................................................................................................27
1.4.3 RF Heating and Drying ...............................................................................................................................................................................................28
1.4.4 RF Ignition .....................................................................................................................................................................................................................................29
1.5 Aerospace & Defense ........................................................................................................................................................................................................................31
1.5.1 Radar ....................................................................................................................................................................................................................................................31
1.5.2 Electronic Counter Measures (ECM) ......................................................................................................................................................32
1.5.3 Military Communication Systems (Milcom) ................................................................................................................................32
2. Technologies ..................................................................................................................................................................................................................................................... 35
2.1 Best-in-Class LDMOS to drive any RF Power Application .........................................................................................................35
2.2 Best-in-Class GaN for High Frequency Performance .....................................................................................................................37
2.3 RF Power Transistor Packages ........................................................................................................................................................................................... 38
3. RF Product Portfolio .....................................................................................................................................................................................................................41
3.1 New Products ................................................................................................................................................................................................................................................ 41
3.2 RF Power Transistors for Mobile Broadband .............................................................................................................................................. 43
3.2.1 0.4 - 1.0 GHz LDMOS Transistors................................................................................................................................................................ 43
3.2.2 1.3 - 1.7 GHz LDMOS Transistors ................................................................................................................................................................ 44
3.2.3 1.8 - 2.0 GHz LDMOS Transistors................................................................................................................................................................ 44
3.2.4 2.0 - 2.2 GHz LDMOS Transistors ..............................................................................................................................................................45
3.2.5 2.3 - 2.4 GHz LDMOS Transistors ............................................................................................................................................................... 46
3.2.6 2.5 - 2.7 GHz LDMOS Transistors ............................................................................................................................................................... 46
3.2.7 3.4 - 3.8 GHz LDMOS Transistors ............................................................................................................................................................... 46
3.2.8 LDMOS Doherty Designs ........................................................................................................................................................................................ 47
3.2.9 GaN Doherty Designs ................................................................................................................................................................................................. 48
3.2.10 Single Package Asymmetric Doherty (PAD) LDMOS Transistors .................................................................49
Contents
424/7 RF - Version 1 - 2016
3.2.11 Overmolded Plastic (OMP) LDMOS Transistors ....................................................................................................................49
3.2.12 MMIC LDMOS Transistors ..................................................................................................................................................................................... 50
3.2.13 Small Cell LDMOS Transistors ........................................................................................................................................................................ 50
3.2.14 High Voltage LDMOS Transistors ................................................................................................................................................................ 51
3.2.15 GaN Transistors for Base Station Applications ............ .......................................................................................................... 51
3.3 RF Power Transistors for Broadcast ..........................................................................................................................................................................52
3.3.1 UHF Broadcast LDMOS Transistors (470 - 860 MHz) .....................................................................................................52
3.3.2 HF / VHF Broadcast LDMOS Transistors (0 - 500 MHz) ...............................................................................................53
3.3.3 HF / VHF Broadcast LDMOS Transistors (0 - 1600 MHz) ............................................................................................53
3.4 RF Power Transistors for Solid State RF Energy and ISM ......................................................................................................... 54
3.4.1 ISM LDMOS Transistors (0 - 500 MHz / XR) .................................................................................................................................. 54
3.4.2 ISM LDMOS Transistors (0 - 1600 MHz) .............................................................................................................................................55
3.4.3 RF Energy LDMOS Transistors (0 - 500 MHz) .............................................................................................................................55
3.4.4 RF Energy LDMOS Transistors (915 MHz) .......................................................................................................................................56
3.4.5 RF Energy LDMOS Transistors (2.45 GHz) ......................................................................................................................................56
3.5 RF Power Transistors for Aerospace & Defense .....................................................................................................................................57
3.5.1 Avionics LDMOS Transistors ..............................................................................................................................................................................57
3.5.2 L-Band LDMOS Transistors ..................................................................................................................................................................................57
3.5.3 S-Band LDMOS Transistors ................................................................................................................................................................................ 58
3.6 Gallium Nitride (GaN) RF Power Devices ........................................................................................................................................................... 58
4. Design Support ................................................................................................ ...........................................................................................................................................61
4.1 Application Notes ...................................................................................................................................................................................................................................62
4.2 Simulation Models .................................................................................................................................................................................................................................62
5. Cross References and Replacements ............................................................................................................................................. 66
5.1 Cross References ................................................................................................................................................................................................. .................................... 66
5.2 Replacements .............................................................................................................................................................................................................................................. 68
6. Packaging and Packing ......................................................................................................................................................................................................... 69
6.1 Packaging .............................................................................................................................................................................................................................................................69
6.2 Packing ..................................................................................................................................................................................................................................................................... 71
6.3 Marking Codes ............................................................................................................................................................................................................................................. 74
7. Abbreviations ................................................................................................................................................................................................................................................. 75
8. Contact ............................................................................................................................................................................................................................................................................76
9. Product Index ................................................................................................................................................................................................................................................ 77
524/7 RF - Version 1 - 2016
EMPOWERING NEXT
GENERATION MOBILE
COMMUNICATION
624/7 RF - Version 1 - 2016
RF Applications
724/7 RF - Version 1 - 2016
1. RF Applications
1.1 Mobile Broadband
ADC
PLL
VC O
DVGA
Att.
LO
Dual
DVGA
Transmitter
Dual
DAC
Dual
Mixer
090
PLL
VC O LNA
BP or LP IF -S AW
R F -S AW
MPA HPA
Dual
ADC
J EDE C
IF
J EDE C InterfaceJ EDE C Interface
IQ-Modulator
I
Q
R F -BP
IF -S AW
Power Amplifier
R X 2
T X / R X 1
Digital
Front
End
DPD
CF R
DUC
DDC
Clock
Generator
Jitter Cleaner
OBS AI / C P R I
Digital Baseband
Tower -
Mounted
Amplifier
µC
Duplexer
Filter Unit
LNA +VGA
(J E DEC ) Interface
DVGA Mixer+LO
RF Power
LNA+VGA
Tx
R x
1.1.1 Base Stations (all cellular standards and frequencies)
RF Power Transistors for Base Stations
Ampleon is the fastest growing supplier of LDMOS transistors for cellular infrastructure, leading the WCDMA and LTE markets.
Our promise is unprecedented performance combined with best-in-class application support and constant innovation.
Our design and manufacturing technologies ensure the best PA manufacturing yields in the industry.
Ampleon's latest 9th and 10th generation LDMOS RF transistors offer the best solutions for all cellular frequency bands.
With the current industry focus on cost reduction, we are extending our product portfolio with OMP and MMIC product
families, which combine high performance with low cost.
Single-Package Asymmetric Doherty (PAD) Transistors and MMICs, Integrated Doherty
PAD devices offer the highest efficiency, smallest footprint, and best cost-effectiveness, and can deliver P1dB power levels up
to 550 W. These products are DPD-friendly and show excellent video bandwidth. Our wide product portfolio covers frequency
bands from 450 MHz to 3.8 GHz and average power levels from 2 to 80 W. Discrete single-stage transistors and asymmetric
MMICs are available to suit most applications, from picocells to macrocells. We are now introducing integrated Doherty to
reduce the size of the PAs for power levels of up to 40 W average. They exist in single- and dual-stage versions.
These Doherty amplifiers integrate both the splitter and combiner inside the package.
Application Diagram of a Base Station
Product Highlight:
LDMOS 2-stage Integrated Doherty
BLM8D1822S-50PB(G)
This fully integrated symmetric Doherty amplifier has two main
applications: driver in macro base-station power amplifiers,
and final stages in small cells (generally in Doherty configuration).
The BLM8D1822S-50PB(G) is a dual path 2-stage integrated Doherty and
final stage (singular). This device is perfectly suited as a general-purpose
driver in the frequency range from 1800 to 2200 MHz. For applications
requiring higher efficiencies, asymmetric versions are in development.
Features
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
wer encies
824/7 RF - Version 1 - 2016
Integrated Doherty Amplifiers for State-of-the-Art Wireless Infrastructure
In order to achieve the highest efficiencies currently possible, Ampleon combines its latest generations of LDMOS technology
with the Doherty concept. We offer the world’s first fully integrated Doherty power amplifier.
The worlds first fully integrated Doherty transistor looks like an ordinary class-AB transistor but contains a splitter, main
and peak devices, delay lines, and a combiner integrated inside the package. With the ease of design of an ordinary class-AB
amplifier, it also provides significant space and cost savings. It is ideally suited for space-constrained applications like small-cell
base stations and massive antenna arrays.
Recommended Products
Product Highlight:
80 W LDMOS Packaged Asymmetric Doherty Power
Transistor for Base Station Applications at Frequencies
from 1805 MHz to 1880 MHz BLC9G20XS-550AVT
A compact Doherty design based on three BLC9G20XS-550AVT devices
achieves 48 % efficiency at 80 W average output power and 15.5 dB gain
with a 2-carrier LTE signal. It has a peak power capability (P3dB) of 550 W
at 28 V supply voltage.
This Doherty is designed for LTE band 3 operation and is tailored to very
high peak power and volume manufacturing with high yields without
tuning. The PA features very high video bandwidth, enabling full-band
operation.
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
MMIC 1800 2200 3BLM8G1822-3B*
Driver 700 2700 5BLP8G27-5
MMIC 1800 2200 6BLM8G1822-6B*
Driver
700 2700 10 BLP8G27-10
3400 3800 10 BLF9G38-10(G)*
2300 2700 10 BLP8G2327-10*
400 1000 10 BLP6H10-10*
MMIC
700 1000 15 BLM8G0710S-15PB(G)
700 1000 15 BLM8G0710-15B*
1805 2170 20 BLM7G1822S-20PB(G)
Driver 2300 2700 20 BLP8G2327-20*
1500 2200 20 BLP8G1522-20*
MMIC 1800 2200 20 BLM8G1822-20B*
Driver/final 3400 3800 25 BLF6G38S-25
MMIC
2300 2700 25 BLM8G2327S-25PB(G)*
2100 2400 30 BLM7G24S-30BG
700 1000 30 BLM8G0710S-30PB(G)
Driver 2110 2170 40 BLF6G22LS-40P
Driver/final 2500 2700 40 BLF6G27LS-40P(G)
MMIC
1805 2170 40 BLM7G1822S-40AB(G)
1805 2170 40 BLM7G1822S-40PB(G)
2300 2700 40 BLM8G2327S-40PB(G)*
700 1000 45 BLM8G0710S-45AB(G)
Driver 700 1000 45 BLP8G10S-45P(G)
Driver/final 3400 3800 50 BLF6G38(LS)-50
MMIC 1805 2170 50 BLM8D1822S-50PB(G)
Doherty 2300 2690 60 BLC8G27LS-60AV
MMIC 2100 2200 60 BLM7G22S-60PB(G)
700 1000 60 BLM8G0710S-60PB(G)
Final 3400 3800 75 BLF8G38LS-75V
MMIC 1805 2170 80 BLM7G1822S-80AB(G)
1805 2170 80 BLM7G1822S-80PB(G)
Final 1800 2200 80 BLP8G20S-80P
3400 3600 90 BLF9G38LS-90P
Doherty 2496 2690 100 BLC8G27LS-100AV
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Final
2300 2400 100 BLF8G24LS-100(G)V
2500 2700 100 BLF8G27LS-100((G)V)
2500 2700 100 BLF8G27LS-100P
Doherty 1805 1995 120 BLC9G20LS-120V
Final 2100 2200 120 BLC10G22XS-120VT*
Doherty 2496 2690 140 BLC8G27LS-140AV
Final
1805 1990 140 BLF8G20LS-140(G)V
2000 2200 140 BLF8G22LS-140
2500 2700 140 BLF8G27LS-140(V)
700 1000 140 BLP7G07S-140P
3400 3800 140 CLF2H38LS-140* (1)
1800 2200 140 CLF2H1822LS-140*
2500 2700 145 CLF2H27LS-145* (1)
Doherty 2496 2690 150 BLC9G27LS-151AV
Final 2300 2400 150 BLF8G24LS-150(G)V
2500 2700 150 BLF8G27LS-150(G)V
Doherty 1805 2025 160 BLC8G21LS-160AV
Final
729 960 160 BLF6H10LS-160
920 960 160 BLF8G10L(S)-160
925 960 160 BLF8G10LS-160V
MMIC 2000 2200 160 BLF8G22LS-160BV
Final
1800 2000 160 BLF9G20LS-160V
1880 2025 160 BLP8G21S-160PV
2100 2200 160 BLC9G22LS-160V
1800 2000 160 BLC9G20LS-160PV
1800 2000 160 BLC9G20XS-160AV*
MMIC 1800 1990 170 BLF8G19LS-170BV
Final 2300 2400 170 BLC9G24XS-170AV*
Doherty 2496 2690 180 BLC8G27LS-180AV
2500 2700 200 BLC8G27LS-210PV
Final
1800 2000 200 BLF8G20LS-200V
2110 2170 200 BLF8G22LS-200(G)V
2300 2400 200 BLF8G24L(S)-200P(N)
400 500 200 BLP8G05S-200(G)
2100 2200 205 BLF8G22LS-205V
Featu 105-60PB
RF Applications
924/7 RF - Version 1 - 2016
Product Highlight:
LDMOS 2-stage Power MMIC BLM8G0710S-60PB
The BLM8G0710S-60PB(G) is a dual section, 2-stage power MMIC using
Ampleon’s state of the art GEN8 LDMOS technology. This multiband
device is perfectly suited as a general purpose driver or small cell final in
the frequency range from 700 MHz to 1000 MHz. Available in gull wing or
straight lead outline.
Features
Designed for broadband operation (frequency 700 MHz to
1000 MHz)
High section-to-section isolation enabling multiple combinations
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Product Fmin
(MHz)
Fmax
(MHz)
PL(3dB)
(W) Type
Driver
3400
3800
40
CLF2H38LS-40
Final
1800 2200 140 CLF2H1822LS-140*
3400 3800 140 CLF2H38LS-140*
2500 2700 145 CLF2H27LS-145*
1800 2200 220 CLF2H1822LS-220*
Recommended Products
* Check status in section 3.1. as this type is not yet released for mass production
For the complete product selection please see section 3.2.15
Second Generation of GaN Products for Mobile Broadband
Ampleon is the first supplier providing both, high-performance GaN HFET and Si LDMOS technology, offering customers
unbiased choices for fully optimized designs, depending on the specific requirements of each application.
Ampleon currently provides engineering samples of its second generation GaN products for cellular infrastructure in the 1.8 to
2.2, 2.7 and 3.8 GHz bands such as CLF2H1822LS-140, CLF2H1822LS-220, CLF2H27LS-145 and CLF2H38LS-140 respectively.
Based on a 0.5 μm gate-length technology Ampleon’s latest generation GaN amplifiers feature excellent efficiency without
compromise in power, ruggedness and linearity, significantly reducing cooling requirements and amplifier footprint.
We extend our product portfolio with Air-Cavity Plastic (ACP) packages, which combine high performance with low cost.
(1) P3dB
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.2
Recommended Products (continued)
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Final
1800 2000 220 BLF8G20LS-220
2110 2170 220 BLF8G22LS-220
1800 2200 220 CLF2H1822LS-220* (1)
1800 2000 230 BLF8G20LS-230V
Doherty
2300 2400 240 BLC8G24LS-241AV
2500 2700 240 BLC8G27LS-240AV
1805 1995 240 BLC9G20LS-240PV
Final
2110 2170 240 BLF8G22LS-240
2100 2200 240 BLC10G22XS-240PWT*
1800 1900 250 BLC10G19XS-250WT*
716 960 270 BLF8G09LS-270(G)W
820 960 270 BLF8G10LS-270(G(V))
2110 2170 270 BLF8G22LS-270
2110 2170 270 BLF8G22LS-270(G)V
Final 700 900 270 BLP8G10S-270PW
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Final 700 1000 300 BLF8G10LS-300P
Doherty
1900 2000 310 BLC8G20LS-310AV (1)
1805 1990 360 BLC9G20LS-361AVT (1)
1800 2000 400 BLC8G20LS-400AV (1)
Final
716 960 400 BLF8G09LS-400P(G)W
1805 1995 400 BLF8G20LS-400P(G)V
1800 2000 400 BLC9G20XS-400AVT (1)
2100 2200 400 BLC9G22XS-400AVT (1)
800 1000 400 BLC8G09XS-400AWT* (1)
800 1000 400 BLC9H10XS-400A* (1)
700 1000 400 BLC9H10XS-400P*
1452 1511 400 BLC9G15XS-400AVT* (1)
Doherty 2110 2170 450 BLC8G22LS-450AV (1)
1805 1990 470 BLC9G20LS-470AVT (1)
Final 1800 1900 550 BLC9G20XS-550AVT (1)
<9 featu="" 25-40mm)="">
10 24/7 RF - Version 1 - 2016
1.1.2 Repeater
I-DAC
Q-DAC
PA
Tx0
LPF
LPF
LPF
LPF
RF SAW
RF SAW
PA
VGA
VGA
Tx1
Rx0
Rx1
Dual mixerHPA Dual DAC
PLL
VCO
LO Signal
Clock
Recovery
jitter
cleaner
DDC/
DUC
Filtering
mixer
mixer
ADC
ADC
Dual ADC Dual VGA Dual mixer
mixer
mixer LNA
LNA
LNA
Application Diagram of the Components used in a Repeater System
Recommended Products
Product Highlight:
LDMOS 2-stage Power MMIC BLM7G1822S-40AB(G)
The BLM7G1822S-40AB(G) is a dual section, asymmetric, 2-stage power
MMIC using Ampleon’s state of the art GEN7 LDMOS technology.
This multiband device is perfectly suited as small cell final in Doherty
configuration, or as general purpose driver in the 1805 MHz to 2170 MHz
frequency range. Available in gull wing or straight lead outline.
Features
Designed for broadband operation (frequency 1805 MHz to
2170 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
(1) P3dB
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.2
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Driver 3400 3800 10 BLF9G38-10(G)*
MMIC 700 1000 15 BLM8G0710-15B*
Driver 2300 2700 20 BLP8G2327-20*
1500 2200 20 BLP8G1522-20*
MMIC 1800 2200 20 BLM8G1822-20B*
Driver 2110 2170 40 BLF6G22LS-40P
Driver/final 2500 2700 40 BLF6G27LS-40P(G)
MMIC
1805 2170 40 BLM7G1822S-40AB(G)
2300 2700 40 BLM8G2327S-40PB(G)*
700 1000 45 BLM8G0710S-45AB(G)
Driver 700 1000 45 BLP8G10S-45P(G)
Driver/final 3400 3800 50 BLF6G38(LS)-50
MMIC 1805 2170 50 BLM8D1822S-50PB(G)
Doherty 2300 2690 60 BLC8G27LS-60AV
MMIC 2100 2200 60 BLM7G22S-60PB(G)
1805 2170 80 BLM7G1822S-80AB(G)
Final 1800 2200 80 BLP8G20S-80P
3400 3600 90 BLF9G38LS-90P
x mm Mmu >< fea="" -="" hig="">
RF Applications
1124/7 RF - Version 1 - 2016
1.1.3 Small Cells
With the explosion of cellular data usage and the limited number of sites available for new macro base stations, operators have
to find new ways of offering high data rates and excellent quality of service. One option is to strengthen the macro network with
small cells, known as picocells (0.25 to 1 W average) and microcells (2 to 5 W average). Ampleon offers several types of solutions
to the small-cell PAs designer, optimized for performance, integration, or cost.
PLL
VC O
μC
LO
Att.
MIXER + LO
BP or LP
BP or LP
IF-SA W DVG A
I
Q
DUAL
DVGA
DUAL
MIXER
DSP
IF-SA W
IF-SA W
LNA
LNA
FILTER
UNIT
DUPLEXER
TOWER-MOUNTED
AMPLIFIER
Tx
TX/RX1
RX 2
Rx
LNA + VG A
RF-SA W
RF-SA W
RF-BP
POWER AMPLIFIER
HPA
MPA
PLL
VC O
DVGA
OR VG A
TRANSMITTER
RECEIVER
IQ-MODULAT OR
90
0
LNA + VG A
Application Diagram of a typical Small-cell Base Station
Product Highlight:
Power LDMOS Transistor BLM8D1822-25B
The BLM8D1822-25B is a 25 W plastic PQFN LDMOS dual-stage integrated
Doherty PA designed for micro-cell applications. This cost-efficient,
wideband device has an ultra-small footprint and covers all base-station
frequencies from 1800 to 2200 MHz.
Features
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Recommended Products
(1) P3dB
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.2.13
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Driver
1800 2200 3BLM8G1822-3B*
700 2700 5BLP8G27-5
1800 2200 6BLM8G1822-6B*
700 2700 10 BLP8G27-10
3400 3800 10 BLF9G38-10(G)*
2300 2700 10 BLP8G2327-10*
2300 2700 20 BLP8G2327-20*
1500 2200 20 BLP8G1522-20*
Driver/final 3400 3800 25 BLF6G38S-25
Driver 2300 2700 25 BLM8G2327S-25PB(G)*
2110 2170 40 BLF6G22LS-40P
Product Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W) Type
Driver/final 2500 2700 40 BLF6G27LS-40P(G)
Final 1805 2170 40 BLM7G1822S-40AB(G)
Driver 2300 2700 40 BLM8G2327S-40PB(G)*
Final 700 1000 45 BLM8G0710S-45AB(G)
Driver 700 1000 45 BLP8G10S-45P(G)
Driver/final 1805 2170 50 BLM8D1822S-50PB(G)
Doherty 2300 2690 60 BLC8G27LS-60AV
Driver 2100 2200 60 BLM7G22S-60PB(G)
Final
1805 2170 80 BLM7G1822S-80AB(G)
1800 2200 80 BLP8G20S-80P
3400 3600 90 BLF9G38LS-90P
AMPLIFYING THE
FUTURE OF TV &
BROADCASTING
12 24/7 RF - Version 1 - 2016
RF Applications
1324/7 RF - Version 1 - 2016
1.2 Broadcast
Application Diagram of a TV Transmitter
typ. 0.5 kW
DVB-T
typ. 5 kW DVB-T
output power
TV e
xciter
DVB-T
Driver stages
amplifiers
harmonic
filter power
monitor
final
Amplifying the Future of TV & Broadcasting
Digital TV accounts for over 70 % of the broadcasting market. With parts of the UHF band reallocated for mobile telephony
(e.g. LTE), operators need to make the most efficient use of the remaining spectrum.
LDMOS Solutions from the Industry Leader for all Segments of the Broadcast Market
Addressing these demands for more efficiency, the broadcasting market is moving away from traditional class A-B solutions.
Solutions based on narrowband and ultra-wideband Doherty power amplifiers deliver increased efficiency of 50 % and above.
In the near future, asymmetrical Doherty amplifiers may provide even higher efficiencies.
We are committed to the UHF-TV industry and continue to invest in UHF-TV LDMOS technology, so that we can deliver
products that support increasingly rich content.
VHF, FM, and Analog TV Markets
Ampleon has enabled the market to transition to and reap the benefits of LDMOS-based solutions. And we will continue to
support our legacy products through customer product life-cycles. We have recently enhanced our broadcast offering with
a full range of eXtremely Rugged (XR) products in our Overmoulded Plastic (OMP) package platform.
Solutions
FM/HDR/DAB Radio
UHF/D-TV
VHF/D-TV
Product Highlight:
UHF Power LDMOS Transistor BLF888D(S)
Designed for broadcast Doherty transmitter applications, including
broadcast transmitters in the UHF band and digital broadcasting systems,
this 650 W LDMOS RF power transistor delivers excellent ruggedness and
is ideally suited for use in digital and analog environments.
Features
High efficiency
High power gain
Excellent ruggedness (VSWR > 40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
14 24/7 RF - Version 1 - 2016
1.2.1 FM/HDR/DAB Radio
Product Highlight:
Power LDMOS Transistor BLF188XR(S)
This 1400 W high power, extremely rugged LDMOS power transistor is
ideal for broadcast and industrial applications in the HF to 600 MHz band.
Features
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Recommended Products
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP10H603 SOT1352-1 10 1400 2.5 50 62 22.8 CW
BLP10H605 SOT1352-1 10 1400 550 59.6 22.4 CW
BLP35M805 SOT1371-1 10 3500 528 17 18 CW pulsed, class-AB
BLP10H610 SOT1352-1 10 1400 10 50 60 22 CW
BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
BLF571 SOT467C 10 500 20 50 70 27.5 CW
BLP05H635XR SOT1223-2 10 600 35 50 75 27 Pulsed RF
BLP05H675XR SOT1223-2 10 600 75 50 75 27 Pulsed RF
Driver/final BLP05H6110XR SOT1223-2 10 600 110 50 75 27 Pulsed RF
BLP05H6150XR SOT1223-2 10 600 150 50 75 27 Pulsed RF
Final BLP05H6250XR SOT1223-2 10 600 250 50 75 27 Pulsed RF
BLF182XR(S) SOT1121A(B) 10 600 250 50 75 28 Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.3
FM (88 - 108 MHz)
FM applications need pure power, resulting in high power building blocks. Ampleons FM solutions not only deliver high power
but are highly efficient, with our latest devices exceeding 85 % efficiency.
Furthermore, FM solutions must be capable of operating under the harshest of conditions. Our eXtremely Rugged (XR)
packaging which supports VSWR > 65 : 1 ensures our products and your service keeps going despite severe operational
conditions.
DAB and HDR
DAB and HDR radio have the same basic requirements as FM: power and robustness. In addition, as they operate across a
broader frequency range, they also need to be highly linear. Ampleons BLFxxxXR transistor series is both highly linear and
stable, making them ideal for these systems.
Ampleon also creates demonstration and reference designs that are optimized in size and performance for radio broadcasting.
These designs are often implemented directly by customers into their systems.
Features and Benefits
Small footprint
Ready for production designs
Printed planar balun design instead of coaxial baluns
m5)
RF Applications
1524/7 RF - Version 1 - 2016
1.2.2 UHF/D-TV
Product Highlight:
UHF Power LDMOS Transistor BLF888E(S)
The BLF888E is a 750 W LDMOS RF power transistor for UHF broadcast
Doherty transmitter applications. The excellent ruggedness of this device
makes it ideal for digital and analog transmitter applications.
Features
Designed for asymmetric Doherty operation
High efficiency
Integrated ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
The UHF (470 - 800 MHz) market is diversifying and taking different approaches to the implementation of full band coverage
with highest possible efficiency. The two main paths are single band ultra-wideband Doherty (UWB) solutions or classical or
wideband Doherty solutions using sub-bands.
Ampleon supports both approaches with dedicated RF power transistors and application designs. For example, our latest
BLF888E transistor is a 3-band ultra-wideband Doherty solution achieving 50 % efficiency across the band. This is a unique
solution in the market.
For classical Doherty we are also developing solutions based on our upcoming BLF898 transistor which will have the highest
DVB-T power capability (180 W average) and will be capable of covering the complete UHF band using a flexible output combiner
design with multiple sub-bands. We are also working on an odd-mode Doherty solution based on the upcoming BLF898(S).
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Final
BLP05H6350XR SOT1223-2 10 600 350 50 75 27.5 Pulsed RF
BLF183XR(S) SOT1121A(B) 10 600 350 50 75 28 Pulsed RF
BLF174XR(S) SOT1214A(B) 10 128 600 50 73 29 Pulsed RF
BLF184XR(S) SOT1214A(B) 10 600 700 50 73.5 23.9 Pulsed RF
BLF184XRG SOT1214B 10 600 700 50 73.5 23.9 Pulsed RF
BLP05H6700XR* SOT1138-2 10 600 700 50 73 23 Pulsed RF
BLF178P SOT539A 10 128 1200 50 75 28.5 Pulsed RF
BLF178XR(S) SOT539A(B) 10 128 1400 50 72 28 Pulsed RF
BLCU188XRS* SOT1250-2 10 600 1400 50 73 24.4 Pulsed RF
BLF188XR(S) SOT539A(B) 10 600 1400 50 73 24.4 Pulsed RF
BLF188XRG SOT1248C 10 600 1400 50 73 24.4 Pulsed RF
Recommended Products (continued)
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see sections 3.3
Recommended Products
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
PL(AV)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver BLP35M805 SOT1371-1 10 3500 5-28 17 18 CW pulsed, class-AB
BLP27M810 SOT1371-1 10 2700 10 -28 19 17 Pulsed CW
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.3
Fe SOXR
16 24/7 RF - Version 1 - 2016
1.2.3 VHF/D-TV
Product Highlight:
Power LDMOS Transistor BLP05H6350XR
The BLP05H6350XR is a 350 W LDMOS RF power transistor for broadcast
transmitter and industrial applications. It can deliver 350 W in broadband
applications from HF to 600 MHz. Its excellent ruggedness and
broadband performance make it ideal for digital transmitter applications.
Features
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent reliability
Easy power control
VHF-TV Band (170 - 250 MHz)
Ampleon’s RF solutions for VHF-TV are highly efficient, with our latest solutions exceeding 85 % efficiency. These high power
solutions provide the building blocks needed to deliver the necessary broadcast reach. These products also need to be able
to operate in extremely harsh conditions making them the ideal candidates for our eXtremely Rugged offering which supports
VSWR > 65 : 1. For design purposes, linearity needs to be pre-correctable.
For VHF-TV applications, Ampleon offers demonstration and reference class-AB applications that are optimized in both size
and performance. These designs are often implemented directly by customers into their systems.
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
PL(AV)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLF640 SOT538A 10 2200 10 -28 31 19.3 1-c W-CDMA
BLF571 SOT467C 10 500 20 -50 70 27.5 CW
BLP10H630P* SOT1223-2 10 1000 30 -50 68 18 Pulsed RF
BLF642 SOT467C 11400 35 -32 63 19 CW
BLP10H660P* SOT1223-2 10 1000 60 -50 68 18 Pulsed RF
BLP10H690P* SOT1223-2 10 1000 90 -50 68 18 Pulsed RF
Driver/final
BLP10H6120P* SOT1223-2 10 1000 120 -50 68 18 Pulsed RF
BLF881(S) SOT467C(B) 11000 140 -50 49 21 CW
BLP15M7160P SOT1223-2 10 1500 160 -28 59.7 19.4 CW
Final/class-AB
BLF882(S) SOT502A(B) 10 860 200 -50 63 20.6 CW
BLF884P(S) SOT1121A(B) 470 860 300 -50 46 21 CW
BLF888A(S) SOT539A(B) 470 860 600 110 50 31 20 DVB-T (8k OFDM)
BLF888B(S) SOT539A(B) 470 860 650 120 50 33 21 DVB-T (8k OFDM)
Final/Doherty BLF888D(S) SOT539A(B) 470 806 -115 50 40 17 DVB-T (8k OFDM)
BLF888E(S)* SOT539A(B) 470 790 -150 50 52 17 DVB-T (8k OFDM)
Final/class-AB BLF898(S)* SOT539A(B) 470 806 900 180 50 32 16 DVB-T (8k OFDM)
Recommended Products (continued)
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.4
Recommended Products
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP10H603 SOT1352-1 10 1400 2.5 50 62 22.8 CW
BLP10H605 SOT1352-1 10 1400 550 59.6 22.4 CW
BLP35M805 SOT1371-1 10 3500 528 17 18 CW pulsed, class-AB
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.3
Featu 8XRS - Easy
RF Applications
1724/7 RF - Version 1 - 2016
Recommended Products (continued)
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP10H610 SOT1352-1 10 1400 10 50 60 22 CW
BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
BLF571 SOT467C 10 500 20 50 70 27.5 CW
BLP05H635XR SOT1223-2 10 600 35 50 75 27 Pulsed RF
BLP05H675XR SOT1223-2 10 600 75 50 75 27 Pulsed RF
Driver/final BLP05H6110XR SOT1223-2 10 600 110 50 75 27 Pulsed RF
BLP05H6150XR SOT1223-2 10 600 150 50 75 27 Pulsed RF
Final
BLP05H6250XR SOT1223-2 10 600 250 50 75 27 Pulsed RF
BLF182XR(S) SOT1121A(B) 10 600 250 50 75 28 Pulsed RF
BLF573(S) SOT502A(B) 10 500 300 50 70 27. 2 CW
BLP05H6350XR SOT1223-2 10 600 350 50 75 27.5 Pulsed RF
BLF183XR(S) SOT1121A(B) 10 600 350 50 75 28 Pulsed RF
BLF574 SOT539A 10 500 600 50 70 26.5 CW
BLF574XR(S) SOT1214A(B) 10 500 600 50 74.7 24 Pulsed RF
BLF184XR(S) SOT1214A(B) 10 600 700 50 73.5 23.9 Pulsed RF
BLF184XRG SOT1214C 10 600 700 50 73.5 23.9 Pulsed RF
BLP05H6700XR* SOT1138-2 10 600 700 50 73 23 Pulsed RF
BLF578 SOT539A 10 500 1200 50 75 26 CW
BLF578XR(S) SOT539A(B) 10 500 1400 50 69 23.5 Pulsed RF
BLCU188XRS* SOT1250-2 10 600 1400 50 73 24.4 Pulsed RF
BLF188XR(S) SOT539A(B) 10 600 1400 50 73 24.4 Pulsed RF
BLF188XRG SOT1248C 10 600 1400 50 73 24.4 Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.3
Product Highlight:
UHF Power LDMOS Transistor BLCU188XRS
The BLCU188XRS is a 1400 W extremely rugged LDMOS power transistor
for broadcast and industrial applications in the HF to 600 MHz band.
Features
Easy power control
Integrated dual sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal resistance due to copper flange
Designed for broadband operation (HF to 600 MHz)
ROBUST SOLUTIONS
SERVING IN HARSH
AND SENSITIVE
ENVIRONMENTS
18 24/7 RF - Version 1 - 2016
RF Applications
1924/7 RF - Version 1 - 2016
1.3 Industrial, Scientific and Medical (ISM)
The ISM frequency bands feature a diverse range of applications including chemical processing, magnetic resonance imaging
(MRI), electro coagulation surgical equipment, precipitation monitoring, and wind profiling. Yet, all these applications share
common requirements, such as high output power, high efficiency, robustness and thermal stability.
Rugged Solutions, Harsh Environments
Systems operating in the ISM band need to share their bandwidth with short-range, low-power communications systems and
radio-frequency identification (RFID) applications. Many ISM applications suffer from severely unmatched inputs and outputs,
demanding very rugged solutions. Whatever the challenge, we have the RF power solutions you need.
RF Power for ISM up to 1600 MHz
Our portfolio includes field-proven LDMOS devices that help developers create ISM systems that deliver high performance
and a long lifetime.
RF Power for the ISM 2.45 GHz Band
Due to its global availability, the 2.45 GHz band supports a wide range of ISM applications including medical therapy as well
as many RF Energy applications (see section 1.4).
Low Power Transistors
Ranging from 2 W to tens of watts, our complete portfolio of low power RF transistors includes devices across all ISM frequencies
and applications. This makes Ampleon the one-stop source for all your ISM RF needs.
Typical Applications
RF drying
RF welding
Citizens’ Band (CB) radio communication
Magnetic Resonance Imaging (MRI)
CO2 lasers
Plasma generators
Particle accelerators
RF heating
RF thawing
Chemical processing
Plasma lighting
Product Highlight:
Broadband LDMOS Driver Transistor BLP10H610
The BLP10H610 is a 10 W LDMOS broadband driver transistor in an OMP
package that is ideal for ISM applications operating at frequencies from
HF to 1400 MHz.
Features
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
20 24/7 RF - Version 1 - 2016
Product Highlight:
Broadband Power LDMOS Transistor BLF647P
The BLF647P is a 200 W LDMOS RF power transistor for industrial
applications in the HF to 1500 MHz frequency range. Its excellent
ruggedness and broadband performance make it ideal for digital
applications.
Features
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
1.3.1 Instrumentation
Ampleon offers a range of RF transistors and evaluation kits for RF instrumentation applications. Our wideband amplifiers
feature low noise and are exceedingly linear, making them particularly suitable for feedback channels in a wide range of
measuring equipment including vector signal transceivers, signal generators and RF power meters.
1.3.2 Medical and Industrial Imaging
Visual presentations are necessary for doctors or clinicians to understand what is going on inside their patients. Ampleon works
with many established brands in helping improve the world of healthcare through safe, efficient and groundbreaking medical
imaging concepts.
However MRI is not only used for medical applications, it can also be used in the industrial market. For example, MRI is used to
measure gas flow in the petrochemical industry.
1.3.3 CO2 Laser Exciters and Plasma Generators
CO2 lasers turn electrical energy into concentrated infrared light energy. The plasma is formed by the gas when electrical energy
transforms into heat. This same process is used for plasma generators.
High power CO2 lasers are used for cutting and welding while lower power applications include engraving. Plasma generators
are primarily used for power generation or to accelerate particle beams, and for plasma etching or deposition in the
semiconductor industry.
These devices need high power amplifiers. High power generates heat. Even highly efficient designs still need to dissipate extra
heat effectively and our ACP3 package, with its low thermal resistance, helps doing that even for very high power systems.
1.3.4 Particle Accelerators
Particle accelerators have endless potential including the development of clean energy, purification of air or water, targeted
cancer treatment, detecting suspicious shipments and of course discovering scientific breakthroughs.
There are three different types of particle accelerators: the synchrotron, linear accelerator (linac) and cyclotron.
A cyclotron accelerates charged particles outwards from the centre along a spiral path, using a rapidly varying (radio frequency)
electric field, cyclotrons are widely used to produce particle beams in physics and nuclear medicine.
ye! re‘eased (or mass produwon emon 3 4 I 4»- .w‘
RF Applications
2124/7 RF - Version 1 - 2016
Product Highlight:
Power LDMOS Transistor BLF188XR
The BLF188XR is a 1400 W extremely rugged LDMOS power transistor for
industrial applications, capable of providing an outstanding 1600 W of
peak output power. It can operate as high as 50 V and still pass extreme
ruggedness testing. The BLF188XR transistor’s ruggedness and excellent
load properties make it ideal for MRI applications.
Features
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP10H610 SOT1352-1 10 1400 10 50 60 22 CW
BLP05H635XR SOT1223-2 10 600 35 50 75 27 Pulsed RF
BLP05H675XR SOT1223-2 10 600 75 50 75 27 Pulsed RF
Driver/final BLP05H6110XR SOT1223-2 10 600 110 50 75 27 Pulsed RF
BLP05H6150XR SOT1223-2 10 600 150 50 75 27 Pulsed RF
Final
BLF182XR(S) SOT1121A(B) 10 600 250 50 75 28 Pulsed RF
BLP05H6250XR SOT1223-2 10 600 250 50 75 27 Pulsed RF
BLF183XR(S) SOT1121A(B) 10 600 350 50 75 28 Pulsed RF
BLP05H6350XR SOT1223-2 10 600 350 50 75 27.5 Pulsed RF
BLF184XR(G) SOT1214(C) 10 600 700 50 73.5 23.9 Pulsed RF
BLF184XRS SOT1214B 10 600 700 50 73.5 23.9 Pulsed RF
BLP05H6700XR* SOT1138-2 10 600 700 50 73 23 Pulsed RF
BLP05H6700XRG* SOT1204-2 10 600 700 50 73 23 Pulsed RF
BLF188XR(S) SOT539A(B) 10 600 1400 50 73 24.4 Pulsed RF
BLF188XRG SOT1248C 10 600 1400 50 73 24.4 Pulsed RF
BLCU188XRS* SOT1250-2 10 600 1400 50 73 24.4 Pulsed RF
Recommended Products for ISM 0 - 500 MHz
Recommended Products for ISM 0 - 1600 MHz
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP35M805 SOT1371-1 10 3500 528 17 18 CW pulsed, class-AB
BLF640 SOT538A 10 2200 10 28 31 19.3 1-c W-CDMA
BLP10H610 SOT1352-1 10 1400 10 50 60 22 CW
BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
BLP10H630P* SOT1223-2 10 1000 30 50 68 18 Pulsed RF
BLF642 SOT467C 11400 35 32 63 19 CW
BLP10H660P* SOT1223-2 10 1000 60 50 68 18 Pulsed RF
Driver/final
BLP10H690P* SOT1223-2 10 1000 90 50 68 18 Pulsed RF
BLF645 SOT540A 11400 100 32 56 18 CW
BLP10H6120P* SOT1223-2 10 1000 120 50 68 18 Pulsed RF
BLP15M7160P SOT1223-2 10 1500 160 28 59.7 19.4 CW
Final
BLF1721M8LS200 SOT502B 1700 2100 200 28 28.5 19 2-c W-CDMA
BLF2324M8LS200P SOT539B 2300 2400 200 28 32 17.2 1-c W-CDMA
BLF647P(S) SOT1121A(B) 10 1500 200 32 70 18 Pulsed RF
BLF6G13L(S)-250P SOT1121A(B) 1300 1300 250 50 56 17 CW
BLF6G15L(S)-500H SOT539A(B) 1400 150 0 500 50 19 16 DVB-T (8k OFDM)
BLF10H6600P(S) SOT539A(B) 400 1000 600 50 46 20.8 2-Tone, class-AB
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.4
Synchrotrons are cyclic particle accelerators that enable large-scale facilities, since bending, beam focusing and acceleration
can be separated into different components. The 27 km long Large Hadron Collider in CERN Switzerland is the world’s largest
synchrotron.
Linear accelerators are increasingly being used in the medical industry for cancer treatment and creating radioactive isotopes.
Linacs run at high power with multiple amplifiers needed to generate particles.
CONTROLLING
HEAT AND POWER
22 24/7 RF - Version 1 - 2016
Feat 5250 - Cop
RF Applications
2324/7 RF - Version 1 - 2016
1.4 RF Energy
Solid state RF Energy represents a radical approach to powering many different types of applications. For cooking, heating and
drying it replaces large, inflexible magnetron tubes with a small, controllable and accurate power source. For lighting, it provides
a highly efficient source that is close to natural light. And in plasma ignition, it enables cleaner combustion to improve fuel
economy and reduce carbon emissions.
Ampleon is a founding member of the RF Energy Alliance whose members share the vision of building a fast-growing and
innovative marketplace and ecosystem around the use of solid state RF Energy as a highly efficient and controllable source
of heat and power.
Solutions
RF cooking
RF lighting
RF heating and drying
Plasma ignition
Recommended Products
Function Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
RF cooking
Driver BLF2425M9L(S)30 SOT1135A(B) 2400 2500 30 32 61 18.5 CW
Final BLC2425M8LS300P* SOT1250-1 2400 2500 300 32 58 17 CW
Driver BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
Final BLC2425M9XS250* SOT1270-1 2400 2500 250 32 61 18 CW
RF lighting
Driver BLP35M805 SOT1371-1 10 3500 528 17 18 CW pulsed, class-AB
Final BLC05M6XS200* SOT1270-1 425 450 200 28 82 21 CW
Driver BLP10H605 SOT1352 10 1400 550 59.6 22.4 CW
Final BLP05H6350XR SOT1223-2 10 600 350 50 75 27.5 Pulsed CW
RF heating and drying
Driver BLF2425M9L(S)30 SOT1135A(B) 2400 2500 30 32 61 18.5 CW
Final BLC2425M8LS300P* SOT1250-1 2400 2500 300 32 58 17 CW
Driver BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
Final BLC2425M9XS250* SOT1270 2400 2500 250 32 61 18 CW
Driver BLP27M810 SOT1371-1 10 2700 10 28 19 17 Pulsed CW
Final BLC2425M9XS250* SOT1270-1 2400 2500 250 32 61 18 CW
Driver BLP10H605 SOT1352 10 1400 550 59.6 22.4 CW
Final BLF0910H6LS500* SOT502B 900 930 500 50 60 18 CW
RF ignition
Predriver BLP27M810 SOT1371 10 2700 10 32 30 17 Pulsed CW
Driver BLF2425M7LS100 SOT502 2300 2500 120 32 55 17.5 Pulsed CW
BLM2425M7S60P SOT1211 2300 2500 90 32 38 23 Pulsed CW
Final BLC2425M9LS700PV* SOT1258-1 2400 2500 1200 (1) 32 50 12.5 Pulsed CW
(1) P3dB pulsed. ∂ ≤ 10%
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see section 3.4
Product Highlight:
Power LDMOS Transistor BLC2425M9XS250
The BLC2425M9XS250 power transistor is one of the first devices to use
our ACP3 technology. Its copper flanges deliver leading Rth performance
and thermal conductivity. A plastic air-cavity package further improves
efficiency by avoiding contact with the bond wires.
Features
Copper flange
Rth performance
Excellent ruggedness
Plastic air-cavity
REVOLUTIONIZING
COOKING
24 24/7 RF - Version 1 - 2016
ME MI} 5250 flywh- “"\ % Feat - Cop
RF Applications
2524/7 RF - Version 1 - 2016
1.4.1 RF Cooking
Cooking your Food to Perfection
Our solid state RF solutions will change the kitchen landscape. RF ovens perform more efficiently than conventional and
microwave-based ovens. And by providing increased control and power, food can be cooked more precisely, keeping taste,
texture and all the vitamins.
Replacing a single magnetron with multiple solid state RF sources brings additional possibilities for controlling the waveform
inside the oven. The frequency can be changed to match the type of food being cooked and by adjusting the phase of the
signals, the energy distribution can be altered to ensure every meal is cooked to perfection.
For the professional market, RF Energy solutions provide fast, reliable and accurate cooking to help fast food chains and
restaurants provide a speedy and appetizing service. In the home, RF Energy solutions not only cooks food to perfection
but also enables new form factors, such as tabletop ovens.
Key Features and Benefits
Cooks homogeneously
Less moisture lost than microwave or conventional ovens
Accurate, controlled flexible cooking
Able to cook different food items at the same time
Ability to monitor cooking process
Supports different form factor designs
Long lifetime
Reduced maintenance costs
Application Diagram of a Solid State Cooking System
CONTROL BOARD
PC
Detector
in out
coupled
out
Detector
in out
coupled
out
Detector
in out
coupled
out
Detector
in out
coupled
out
Product Highlight:
Power LDMOS Transistor BLC2425M9XS250
The BLC2425M9XS250 power transistor is one of the first devices to use
our ACP3 technology. Its copper flanges deliver leading Rth performance
and thermal conductivity. A plastic air-cavity package further improves
efficiency by avoiding contact with the bond wires.
Features
Copper flange
Rth performance
Excellent ruggedness
Plastic air-cavity
BRINGING ENERGY
TO LIGHT
26 24/7 RF - Version 1 - 2016
FFFFF - High
RF Applications
2724/7 RF - Version 1 - 2016
1.4.2 RF Lighting
Application Diagram of RF Light-Emitting Plasma (LEP)
Our understanding of RF technology has enabled us to create some of the most rugged devices in the industry - know-how that
we have instilled into our RF lighting transistors. In addition, the very high efficiency of our LDMOS transistors also allows our RF
lighting solutions to deliver very high lumens/watt, beating conventional sources.
Our latest RF lighting solutions are ideal for both indoor and outdoor area lighting in architectural, entertainment, high bay and
agricultural/horticultural applications. In the horticulture segment, RF lighting delivers full spectrum light which can help to
increase the speed of cultivating and the quality of crops for the next generation of farmers. This also makes it ideal for retail
applications to ensure items, from food to the latest fashion, look more natural under indoor lighting.
With energy savings of up to 50 % over high-pressure sodium and metal halide systems and long lamp lifetimes, RF lighting
helps to reduce maintenance costs in high bay/high mast installations from car parks to warehouses.
Key Features and Benefits
Full spectrum light
Controllability
Dimmable
Energy saving
Long lifetime
Lower maintenance cost
Smaller form factor design
Product Highlight:
Power LDMOS Transistor BLC05M6XS200
The BLC05M6XS200 is designed for high-power CW applications and is
assembled in a high performance plastic package. This 200 W LDMOS
power transistor for RF lighting applications operates at frequencies from
425 MHz to 450 MHz.
Features
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (425 MHz to 450 MHz)
Internally input matched for high gain
Oscillator
MPA HPA
CONTROLLER
28 24/7 RF - Version 1 - 2016
Product Highlight:
Power LDMOS Transistor BLF0910H6LS500
This 500 W LDMOS power transistor is suitable for industrial applications
in the 915 MHz frequency band. The BLF0910H6LS500 is designed for high
power CW applications and is assembled in a high performance ceramic
package.
Features
High efficiency
Easy power control
Excellent ruggedness
Integrated ESD protection
Designed for broadband operation (900 MHz to 930 MHz)
Internally input matched
1.4.3 RF Heating and Drying
Industrial RF heating and drying is fast and flexible. It allows for a quicker and streamlined production process for many
manufacturing applications. It provides uniform heating and drying, a reduction in emissions and improvements in product
quality and efficiency.
We offer RF heating and drying solutions for both the 915 MHz and 2.45 GHz ISM frequency bands. Available as individual
transistors or complete pallets, our solutions can be easily scaled to deliver the needed power and can assist in reducing
emissions, improving efficiency and speeding up production processes. RF heating and drying can be used for a wide range
of applications from food preparation to chemical processing.
Key Features and Benefits
Faster uniform drying
Excellent ruggedness
Thermal stability
Efficiency savings
Controllability, with available feedback loop
Heat spreads evenly across a target
Prevents local overheating
Improved product quality
Unprecedented system reliability
RF Applications
2924/7 RF - Version 1 - 2016
Product Highlight:
Power LDMOS Transistor BLC2425M9LS700PV
This is a 1200 W LDMOS power transistor for industrial applications
at 2.45 GHz, and particularly automotive plasma ignition. The
BLF2425M9LS700PV is designed for high power low duty cycle pulsed
applications and is assembled in a high performance ACP2 package.
Features
Very high output power
High efficiency
2400 to 2500 MHz operation
Internal input and output matching
Integrated rise/fall time protection
1.4.4 RF Ignition
A Revolution in Automotive Ignition
The automotive industry is facing increasingly tough emission challenges. New European regulations to be introduced in 2021
will reduce fleet CO2 emissions from today’s 130 g/km to 95 g/km. While electric vehicles will play a role in meeting these new
targets, they still only represent a small percentage of vehicles sold. Automotive manufacturers will also need to make their
combustion engine vehicles more efficient and RF ignition offers a new and exciting concept which can improve fuel efficiency
and reduce pollutants.
RF plasma ignition is an emerging technology which has been in development for more than five years. Ampleon has been
working closely with partners to make this new technique a reality for efficient automotive use.
Micro plasma ignition has advantages over the traditional spark plug as it enables more complete combustion, allowing for
a leaner fuel mix and thus reducing carbon emissions and the need for catalytic converters or custom exhausts.
Key Features and Benefits
Cost-efficient
Easy implementation
Improved fuel efficiency
Reduced emissions
MAKING THE WORLD
A MORE PREDICTABLE
PLACE
30 24/7 RF - Version 1 - 2016
RF Applications
3124/7 RF - Version 1 - 2016
1.5 Aerospace & Defense
SWaP + CR
Size, Weight and Power (SWaP) have long been the key requirements for aircraft systems. Systems need to be small, lightweight
and yet still powerful enough for long range operation. Moreover, today’s systems must also be Cost-efficient and Reliable (CR).
As a recognized global leader in base station and broadcast transmitters, Ampleon strengthens a broad portfolio for the
strategic aerospace & defense market. With 50 years of experience in RF, Ampleon is an established, market leading supplier
with a wealth of knowledge and expertise. We are committed to fully support customers' applications with a dedicated longevity
program that guarantees our parts will continue to be available throughout the operational lifetime.
In addition to GaN solutions that deliver the highest performance, we also offer dedicated Gen9 LDMOS solutions that provide
close to GaN performance at a much lower cost and with higher reliability and ruggedness. By being technology agnostic,
we can help customers find the best possible solution for their application needs.
All our aerospace & defense products are ITAR-free, simplifying logistics and paperwork for designs aimed at export markets.
We also provide global application support with offices in the US, Europe and Asia.
Fast Time to Market
To ensure you get your solutions to market as quick as possible, we offer discrete RF components, MMICs
and complete RF pallets.
1.5.1 Radar
Commercial avionics and military radar applications include air traffic control, situational awareness, weather radar, surveillance,
fire control, searching and tracking. These systems cover a wide range of operating frequencies and there is an ongoing
transition within solid state power amplifier solutions and from bipolar to LDMOS and GaN. Ampleon offers a broad portfolio
of dedicated LDMOS and GaN solutions that covers all these frequency bands with highly reliable solutions.
Frequency Bands
Sub-1 GHz
Commercial Avionics (950 - 1215 MHz / 1030 - 1090 MHz)
L-band (1 - 2 GHz)
S-band (2 - 4 GHz)
C-band (4 - 8 GHz)
X-band (8 - 12 GHz)
Ku-band (12 - 18 GHz)
Product Highlight:
LDMOS S-band Radar Power Transistor
BLS9G2934L(S)-400
The BLS9G2934L(S)-400 is a 400 W LDMOS power transistor intended
for S-band radar applications in the 2.9 to 3.4 GHz range.
Features
Easy power control
Integrated dual sided ESD protection enables excellent
off-state isolation
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for S-band operation
Internally matched for ease of use
\ W \ V X \l \ I <\\\:\ km="" l="" 1="" ii="" featu="" re="" -="" operat="" i="">
32 24/7 RF - Version 1 - 2016
1.5.2 Electronic Counter Measures (ECM)
Electronic counter measures / jammers are used in all walks of life from defense systems to cellular jammers. High power is
critical for this market along with a wide frequency range and high efficiency. Ampleon’s solutions ensure effective coverage
across a broad bandwidth with the highest power GaN products on the market.
Application Support
To support customers in developing and bringing new ECM solutions to market quickly, we have a range of demo boards
available on request.
1.5.3 Military Communication Systems (Milcom)
RF solutions for Milcom applications require the highest linearity to ensure clear, interference-free communication. Ampleon
offers dedicated solutions for Milcom applications that perform up to 10 dBC (IMD3 linearity) better than competitive products.
Our portfolio includes both GaN and LDMOS devices.
10
-50
-45
-40
-35
-30
-25
Curves at 1, 1.8, 2.5 GHz
Ampleon’s device, Idq = 200 mA
Competitor A , Idq= 450 mA
Competitor B, Idq = 400 mA
-20
IMD3 (dBc)
PEP Pout (W)
Product Highlight:
Broadband RF Power GaN HEMT
CLF1G0035(S)-200P
The CLF1G0035-200P and CLF1G0035S-200P are 200 W general
purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
Features
Operating frequency from DC to 3.5 GHz
200 W general purpose broadband RF Power GaN HEMT
Excellent ruggedness (VSWR 10 : 1)
High voltage operation (50 V)
Thermally enhanced package
50 W GaN Device Comparison in 1000 - 2500 MHz 50 W Demonstration Board 18502-tone Intermodulation Distortion,
Δf=1 MHz, Vd=50 V
re‘eased {or mass produmon n5 3 S and 3 6 n x " a (S)
RF Applications
3324/7 RF - Version 1 - 2016
Product Highlight:
Power LDMOS Transistor BLF183XR(S)
The BLF183XR is a 350 W extremely rugged LDMOS power transistor
for and industrial applications in the HF to 600 MHz band.
Features
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Broadband operation (HF to 600 MHz)
Recommended LDMOS Products for ECM & Milcom
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB)
Linearity,
(2-tone IMD3) Test signal
Driver
BLP35M805 SOT1371-1 10 3500 528 17 18 -CW pulsed, class-AB
BLP10H610 SOT1352-1 10 1400 10 50 35 to 57 > 22 -40 dBc, PEP 5 W CW @ 20 to 512 MHz
BLF571 SOT467C 10 500 20 50 40 to 53 > 14 -38 dBc, PEP 10 W CW @ 200 to 800 MHz
BLF642 SOT467C 11400 35 32 71 > 22 -40 dBc, PEP 10 W CW @ 30 to 512 MHz
BLF644P SOT1228A 10 1300 70 32 30 to 38 > 18 -39 dBc, PEP 15 W CW @ 10 to 600 MHz
BLF645 SOT540A 11400 100 32 50 to 70 >22 -30 dBc, PEP 100 W CW @ 20 to 512 MHz
BLF881(S) SOT467C(B) 11000 140 50 60 to 75 > 17 -30 dBc, PEP 100 W CW @ 30 to 512 MHz
Final
BLF647P(S) SOT1121A(B) 10 1500 200 32 50 to 64 > 22 -36 dBc, PEP 100 W CW @ 10 to 600 MHz
BLF183XR(S) SOT1121A(B) 10 600 350 50 54 to 61 > 14 -40 dBc, PEP 220 W CW @ 30 to 512 MHz
BLF574 SOT539A 10 500 600 50 45 to 60 > 20 -35 dBc, PEP 400 W CW @ 20 to 550 MHz
BLF574XR(S) SOT1214A(B) 10 500 600 50 74,7 24 -Pulsed RF
BLF184XR(G) SOT1214A(C) 10 600 700 50 73,5 23.9 -Pulsed RF
BLCU188XRS* SOT1250-2 10 600 1400 50 73 24.4 -Pulsed RF
Recommended GaN Products for ECM & Milcom
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB)
Linearity, (2-tone
IMD3, Δf= 1 MHz) Test signal
Driver
CLF1G0060(S)-10 SOT1227A(B) 06000 > 10 50 30 to 60 > 14 -40 dBc, PEP 5 W Pulsed RF @ 200 to 3200 MHz
CLF1G0060(S)-30 SOT1227A(B) 06000 > 30 50 45 to 70 > 11 -40 dBc, PEP15 W Pulsed RF @ 500 to 3000 MHz
CLF1G0035(S)-50 SOT467C(B) 03500 > 50 50 40 to 65 > 14 -40 dBc, PEP 10 W CW @ 500 to 2500 MHz
Final
CLF1G0035(S)-100P SOT1228A(B) 03500 > 100 50 50 to 55 > 13 -40 dBc, PEP 20 W Pulsed RF @ 2500 to 3000 MHz
CLF1G0035(S)-100 SOT467C(B) 03500 > 100 50 47 to 80 > 14 -40 dBc, PEP 20 W Pulsed RF @ 500 to 2500 MHz
CLF1G0035(S)-200P SOT1228A(B) 03500 > 200 50 40 to 55 > 12 -40 dBc, PEP 120 W Pulsed RF @ 1700 to 2300 MHz
* Check status in section 3.1, as this type is not yet released for mass production
For the complete product selection please see sections 3.5 and 3.6
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver
BLP10H610 SOT1352-1 10 1400 10 50 60 22 CW
BLP10H630P* SOT1223-2 10 1000 30 50 68 18 Pulsed RF
BLP05H635XR SOT1223-2 10 600 35 50 75 27 Pulsed RF
BLP10H660P* SOT1223-2 10 1000 60 50 68 18 Pulsed RF
BLP05H675XR SOT1223-2 10 600 75 50 75 27 Pulsed RF
Driver/final
BLP10H6120P* SOT1223-2 10 1000 120 50 68 18 Pulsed RF
BLF182XR(S) SOT1121A(B) 10 600 250 50 75 28 Pulsed RF
BLF183XR(S) SOT1121A(B) 10 600 350 50 75 28 Pulsed RF
BLF574XR(S) SOT1214A(B) 10 500 600 50 74.7 24 Pulsed RF
BLF184XR(G) SOT1214A(C) 10 600 700 50 73.5 23.9 Pulsed RF
BLF578 SOT539A 10 500 1200 50 75 26 CW
BLCU188XRS* SOT1250-2 10 600 1400 50 73 24.4 Pulsed RF
Recommended LDMOS Products for Sub-1 GHz
Product Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
Driver CLF1G0060(S)-10 SOT1227A(B) 06000 10 50 55 17 Pulsed RF @ 5000 MHz
CLF1G0060(S)-30 SOT1227A(B) 06000 30 50 49 14 Pulsed RF @ 4000 MHz
Recommended GaN Products for C-Band
DRIVING
TECHNOLOGIES FOR
BEST PERFORMANCE
34 24/7 RF - Version 1 - 2016
Technologies
3524/7 RF - Version 1 - 2016
2. Technologies
2.1 Best-in-Class LDMOS to drive any RF Power Application
LDMOS (Laterally Diffused Metal Oxide Semiconductor) is the mainstream device technology used in high-power RF
amplifiers for frequencies ranging from 10 MHz to 3.8 GHz. LDMOS offers significant performance advantages, including
very high ruggedness and efficiency, high gain, and compatibility with low-cost packaging platforms. LDMOS also offers
a strong cost advantage combined with a large industrial base versus other technologies, such as GaN.
Ampleon’s LDMOS technology platforms are designed for devices that run from supply voltages in the range of 28 to 50 V,
with outstanding efficiency, power, and ruggedness. The technology draws on Ampleon’s heritage of proven product and
technology innovation in RF, which spans over 35 years. Ampleon’s LDMOS devices deliver record performance up to 3.8 GHz
and are applied extensively by wireless network operators to realize best-in-class efficiencies for wireless base stations and
hence reduce operating costs. Our first Gen10 LDMOS products are releasing to production in 2016 and have been optimized
for LTE and with 1.5 dB higher power gain and modulated power added efficiencies in the excess of 50 % at 2.1 GHz.
High Power Doherty Processes and Architectures
We achieved these high efficiencies by developing optimized LDMOS devices with specific Doherty amplifier circuit designs.
Our LDMOS process technology is developed to support Doherty amplifiers with the combination of high power, high efficiency,
low memory effects and excellent pre-distortion capabilities. Ampleon supplies Doherty amplifier circuits both as discrete
transistor products and integrated as Packaged Asymmetric Doherty (PAD) products in a single high power transistor package.
These are fully RF tested at the Doherty level to guarantee performance in the customer’s application circuit, demonstrate the
strengths of Ampleon’s LDMOS to deliver new levels of consistency in power distribution over a die, and also in production,
from batch to batch and year to year.
Broadband MMICs and Drivers
Ampleon has specifically developed a broad portfolio of high performance MMIC products to simplify the overall amplifier line
up. These are high efficiency 2-stage multiband amplifiers, covering frequency ranges 0.7 - 1 GHz, 1.8 - 2.2 GHz, 2.3 - 2.7 GHz
or 3.4 - 3.8 GHz, and packaged in low cost overmolded plastic. They line-up seamlessly with the high power Doherty products
or can be used as standalone transmit amplifiers for lower power applications, e.g. small cells. We are extending the portfolio
in 2016 with integrated Doherty MMICs where the input splitter and output combiner of the Doherty circuit are integrated into
the MMIC package to enhance broadband performance and minimize overall application size.
Multi Market: Higher Power Densities and Ruggedness
For the Broadcast, ISM and Aerospace & Defense markets, Ampleon has developed a family of LDMOS process platforms to
provide devices tuned to the specific needs of these applications. For example, the Gen6HV technology has been optimized for
42 to 50 V operation, and improved further as XR2 to enable devices with ruggedness on par with legacy VDMOS technology.
The Gen6XR process is essential for ISM applications which suffer from severe mismatch conditions, since Gen6XR enables
products that withstand a 1:65 mismatch ratio without compromising the RF performance while still delivering output powers
up 1600 W CW. For broadcast applications, Ampleon offers a broad portfolio of 50 V LDMOS products that set new milestones
in terms of power density and provide a unique high efficiency solution when combined with our patented Ultra-Wideband
(UWB) Doherty technology to cover the full broadcast frequency spectrum.
Aerospace & Defense Applications
The improvements in LDMOS technology have enabled the aerospace & defense radar markets to migrate from designs
using Si bipolar power transistors to LDMOS. LDMOS RF performance is superior to Si bipolar, has a simpler application
and significant cost-of-ownership benefits in these markets. Gen6HV products provide highly efficient solutions for Avionics
L-band radar applications. Our Gen10 LDMOS has a competitive high frequency performance at 2.7 - 3.8 GHz addressing
S-band radar supplementing a full portfolio of broadband GaN devices.
36 24/7 RF - Version 1 - 2016
Solid State RF Energy
The promise of RF Energy is a cleaner, more efficient, and more effective power source than conventional solutions. From solid
state cooking and RF sparkplugs, to RF plasma lighting and medical therapy, to industrial cooking and drying, the possibilities
for RF Energy are nearly limitless. A radical approach is sometimes needed to break through existing limitations and this is
exactly what RF Energy offers. Ampleon has a portfolio of tailored LDMOS amplifiers to meet the requirements of individual RF
Energy applications, from solid state lighting at 433 MHz, to industrial heating at 900 MHz to consumer cooking at 2.45 GHz.
Power levels up to 1200 W are supported and complemented by a full portfolio of drivers to create the full power line-up
needed in any RF Energy application.
Benefits
Competitive products to fit all applications covered by LDMOS
Continuous technology improvements meet market needs
Dedicated technology nodes designed around specific application requirements
Features
Gen9/10 with enhanced VBW performance for 28 - 32 V base-station, aerospace & defense applications
Gen8/9 dual stage multiband MMICs
Gen6XR for 50 V ISM applications requiring extreme ruggedness
Gen6HV for 50 V high power-density for broadcast
Q: bfitfim f f f f 1 m M
Technologies
3724/7 RF - Version 1 - 2016
2.2 Best-in-Class GaN for High Frequency Performance
With more than 35 years of experience in delivering RF power transistors, Ampleon leads the industry in offering GaN RF
power devices through a secure and reliable mainstream supply chain for wireless infrastructure, industrial, scientific and
medical (ISM), and aerospace and defense applications.
Ampleon’s second generation 50 V GaN process technology features best-in-class linearity while at the same time allowing
designers to maintain power, ruggedness, and efficiency. Our third generation GaN processes are being released in 2016,
offering a further increase in power density and performance at 50 V as well as a 30 V GaN node for high frequency applications.
GaN technology features best-in-class linearity while at the same time allowing designers to maintain power, ruggedness, and
efficiency. This enables an uncompromised amplifier design that can minimize component count and reduce amplifier footprint.
Our leading back-end assembly facility consistently leverages the high power density of GaN into smaller and more broadband
circuitry. Through a broad portfolio of high performance GaN and LDMOS products, Ampleon offers an unbiased choice in
enabling optimized designs for your application.
Setting New Performance Boundaries for RF Power Amplifiers
GaN products are also called High-Electron Mobility Transistors (HEMT), a name that captures one of the intrinsic benefits
of GaN – the high electron drift velocity. However, these transistors are depletion-mode devices, so they are normally on
and require a negative gate bias to switch them off. This biasing is not straightforward but Ampleon has proven bias circuitry
to support any application. A further advantage of GaN is that it is a very strong semiconductor material, so it is capable of
withstanding very high temperatures. Ampleon’s GaN transistors are specified to a maximum temperature of 250 °C, compared
to 225 °C for Si LDMOS. With such high temperature capability, there is a greater need to have packages capable of exploiting
this feature. For this, customers benefit from Ampleon’s 35-year legacy in RF power products. Simply put, GaN technology
makes a step increase in efficiency and power density performance over Si LDMOS in several applications (see figure below).
High Efficiency Doherty Architectures
Ampleon’s GaN process technology has been developed to support Doherty amplifiers with the combination of high power,
high efficiencies, low memory effects, and low pre-distortion due to trapping effects. To create high efficiency Doherty circuits,
we developed optimized GaN devices with specific impedance matching in the amplifier circuit to boost the performance.
As with our LDMOS solutions, Ampleon supplies Doherty amplifier circuits both as discrete transistor products and integrated
as packaged asymmetric Doherty (PAD) products and we are also releasing low power 30 V MMICs for higher frequency
applications.
Key Features and Benefits
High frequencies and bandwidth up to 6 GHz for 50 V GaN
and 12 GHz for 30 V GaN
High efficiency and excellent linearity
High power density
Operation at higher temperatures, without loss of reliability
(250 °C compared to 225 °C for Si LDMOS)
Excellent ruggedness
Applications
Commercial wireless infrastructure (base stations)
Radar systems and jammers
Broadband and narrowband general-purpose amplifiers
Public mobile radios
ISM applications: test instrumentation and EMC testing
GaN vs LDMOS Comparison @ 2.1 GHz
38 24/7 RF - Version 1 - 2016
2.3 RF Power Transistor Packages
Packaging is an important element in RF power transistors, influencing both the cost-efficiency and performance of
a given device. Since peak powers can vary widely, from as low as 5 W to more than 1 kW, a range of packages is needed
to cover every application. The choice of package format (air-cavity or overmolded plastic), often depends on the design
requirements, and any trade-offs to be made between performance and cost.
Air-Cavity Packages
The traditional package for RF power transistors is the air-cavity package with a ceramic lid. The flange (or heatsink) material has
evolved over the years and the most commonly used material today is CPC (Cu/Mo70Cu/Cu), a laminate of copper and copper-
molybdenum. This material has been selected for its thermal properties, providing a low Rth (compared to the Cu-W used earlier)
as well as a good CTE (Thermal Expansion Coefficient) match with the silicon used for the active dies and the internal matching
capacitors. The package is made of three parts: flange, ringframe and lid. The flange is brazed with the ringframe at high
temperature and the resulting component is known as a header. Active and passive dies are then soldered to the flange and wire
bonds are used to create the matching circuits and the connections with the leads. The transistor is then closed by gluing the lid
on top. The final step consists of testing the product for compliance to specification.
Air-Cavity Ceramic (ACC) Packages
Air-cavity ceramic packages have proven their reliability and performance over the years and exist in a variety of sizes and power
levels. They present a number of advantages but also some disadvantages. They are assembled one by one, thereby demanding
a high handling time, and the brazing of the ringframe with the flange creates stress and distortions. Also, each package variation
(such as additional leads, or shorter leads) demands the creation of a unique header and there are limited economies of scale.
Air-Cavity Plastic (ACP) Packages
In order to overcome the limitations of the ACC package while keeping its
performance advantages, Ampleon has introduced a new family of packages
known as Air-Cavity Plastic (ACP2). Their structure is similar to ACC but the
lid and the ringframe are made of polymers instead of ceramic. This enables
the ringframe to be glued to the flange rather than brazed, and reduces the
stress and distortions of the flange. This in turn allows the use of thinner
matching capacitors, reducing RF losses both at the gate and the drain. The
result is higher gain and efficiency compared to the ACC format. In addition,
the assembly process uses strips rather than individual headers, reducing
handling time and allowing more variation in lead shape and length while
* Not drawn to scale
For the complete ACC package overview please see section 6.1
SOT1135B*
SOT1121B*
SOT1120B ACC Package Structure
SOT539A The Three Components of an ACP Transistor:
CPC flange, Polymer Ringframe, Polymer Lid
A Strip of ACP Transistors
Technologies
3924/7 RF - Version 1 - 2016
simplifying logistics. The improved ACP3 package has a further key enhancement by replacing the traditional CPC flange with
a Cu flange which gives a 30 % improvement in thermal performance as well as simplifying the board level assembly to provide
a highly effective cost-efficient RF package solution.
Overmolded Plastic (OMP) Packages
A third transistor package family is overmolded plastic (OMP). The package structure is similar to that of an integrated
circuit, with a copper flange and a molded body, but discrete wire bonds are used in the matching network for improved RF
performance.
OMP packages have a number of outlines, from the HVQFN package for low power drivers, to PQFN package for higher power
drivers, and the SOT502 format of packages for dual path MMICs, and discretes. OMP is an ideal package for low frequency
and low power applications. For the highest performance applications, where the last percentage and decibel matter, air-cavity
packages remain the best option.
The wide range of packages offered by Ampleon enables you to select the right device precisely optimized for your application
and allows to find the best compromise between cost and performance.
HVQFN MMIC Driver Discrete Final
* Not drawn to scale
For the complete ACP package overview please see section 6.1
* Not drawn to scale
For the complete OMP package overview please see section 6.1
SOT1275-1* SOT1278-1*
EMBRACING
UNCOUNTED
APPLICATIONS
40 24/7 RF - Version 1 - 2016
4124/7 RF - Version 1 - 2016
RF Product
Portfolio
3. RF Product Portfolio
Type Application/description
Expected status
per May 2016
Planned
release Section
New: RF Power LDMOS Transistors for Base Station Applications
BLM8G1822-3B Plastic LDMOS MMIC transistor for base station applications DEV Q4-16 3.2.3
BLP8G27-5 Plastic LDMOS transistor for base station applications RFS Released 3.2.2
BLM8G1822-6B Plastic LDMOS MMIC transistor for base station applications DEV Q4-16 3.2.3
BLF9G38-10(G) Ceramic LDMOS transistor for base station applications DEV Q2-16 3.2.7
BLP6H10-10 Plastic LDMOS transistor for base station applications DEV Q4-16 3.2.1
BLP8G2327-10 Plastic LDMOS transistor for base station applications DEV Q3-16 3.2.6
BLP8G27-10 Plastic LDMOS transistor for base station applications RFS Released 3.2.2
BLM8G0710-15B Plastic LDMOS MMIC transistor for base station applications DEV Q4-16 3. 2.1
BLM8G0710S-15PB(G) Plastic LDMOS MMIC transistor for base station applications RFS Released 3.2.1
BLM8G1822-20B Plastic LDMOS MMIC transistor for base station applications DEV Q4-16 3.2.3
BLP8G1522-20 Plastic LDMOS transistor for base station applications DEV Q3-16 3.2.2
BLP8G2327-20 Plastic LDMOS transistor for base station applications DEV Q3-16 3.2.5
BLM8D1822-25B Plastic LDMOS MMIC transistor for base station applications DEV Q1-17 3.2.3
BLM8G2327S-25PB(G) Plastic LDMOS MMIC transistor for base station applications DEV Q1-17 3.2.6
BLM8G2327S-40PB(G) Plastic LDMOS MMIC transistor for base station applications DEV Q4-16 3.2.6
BLM8G0710S-45AB(G) Plastic LDMOS MMIC transistor for base station applications RFS Released 3.2.1
BLM8D1822S-50PB(G) Plastic LDMOS MMIC transistor for base station applications RFS Released 3.2.3
BLC8G27LS-60AV(H) Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.6
BLM8G0710S-60PB(G) Plastic LDMOS MMIC transistor for base station applications RFS Released 3.2.1
BLM7G1822S-80PB(G) Plastic LDMOS MMIC transistor for base station applications RFS Released 3.2.3
BLF9G38LS-90P Ceramic LDMOS transistor for base station applications RFS Released 3.2.7
BLC10G22XS-120VT Air-cavity plastic LDMOS transistor for base station applications DEV Q4-16 3.2.4
BLC9G20LS-120V Air-cavity plastic LDMOS power transistor for base station applications RFS Released 3.2.3
BLC9G27LS-151AV Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.6
BLC9G20XS-160AV Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q3-16 3.2.3
BLC9G24XS-170AV Air-cavity plastic LDMOS asymmetrical Doherty power transistor for base station applications DEV Q3-16 3.2.5
BLP8G05S-200(G) Plastic LDMOS transistor for base station applications RFS Released 3.2.1
BLF8G22LS-205V Ceramic LDMOS transistor for base station applications RFS Released 3.2.4
BLC10G22XS-240PWT Air-cavity plastic LDMOS transistor for base station applications DEV Q4-16 3.2.4
BLC8G27LS-240AV Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.6
BLC9G20LS-240PV Air-cavity plastic LDMOS power transistor for base station applications RFS Released 3.2.3
BLC8G24LS-241AV Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.5
BLC10G19XS-250WT Air-cavity plastic LDMOS transistor for base station applications DEV Q4-16 3.2.3
BLP8G10S-270PW Plastic LDMOS symmetric Doherty transistor for base station applications RFS Released 3.2.1
BLC9G20LS-361AVT Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.3
BLC8G09XS-400AWT Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q3-16 3. 2.1
BLC9G15LS-400AVT Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.2
BLC9G15XS-400AVT Air-cavity plastic LDMOS asymmetrical Doherty power transistor for base station applications DEV Q4-16 3.2.2
Ampleon Product Catalog
www.ampleon.com/products
3.1 New Products
DEV = in Development
RFS = Released for Supply
42 24/7 RF - Version 1 - 2016
Type Application/description
Expected status
per May 2016
Planned
release Section
BLC9G20XS-400AVT Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q2-16 3.2.3
BLC9G22XS-400AVT Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q2-16 3.2.4
BLC9H10XS-400A Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q4-16 3.2.1
BLC9H10XS-400P Air-cavity plastic LDMOS transistor for base station applications DEV Q4-16 3.2.1
BLC8G22LS-450AV Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.4
BLC9G20LS-470AVT Air-cavity plastic LDMOS PAD transistor for base station applications RFS Released 3.2.3
BLC9G20XS-550AVT Air-cavity plastic LDMOS PAD transistor for base station applications DEV Q2-16 3.2.3
NEW: Gallium Nitride (GaN) RF Power Transistors for Base Station Applications
CLF2H1822LS-140 Gen2 GaN HEMT for base station applications DEV Q1-17 3.2.15
CLF2H38LS-140 Gen2 GaN HEMT for base station applications DEV Q3-16 3.2.15
CLF2H27LS-145 Gen2 GaN HEMT for base station applications DEV Q4-16 3.2.15
CLF2H1822LS-220 Gen2 GaN HEMT for base station applications DEV Q1-17 3. 2.15
New: RF Power LDMOS Transistors for FM/UHF/VHF/RF Energy - ISM Applications
BLP35M805 Plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLP27M810 Plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLF2425M9L(S)30 Ceramic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.4.5
BLP10H630P Plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q3-16 3.3.1
BLP05H635XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLM2425M7S60P Ceramic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.4.5
BLP10H660P Plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q3-16 3.3.1
BLP05H675XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLP10H690P Plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q3-16 3.3.1
BLP05H6110XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLP10H6120P Plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q3-16 3.3.1
BLF2425M9LS140 Ceramic LDMOS transistor for RF Energy - ISM applications DEV Q2-16 3.4.5
BLP05H6150XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLC05M6XS200 Air-cavity plastic LDMOS power transistor for RF lighting applications DEV Q2-16 3.3.2
BLF1721M8LS200 Ceramic LDMOS transistor for RF Energy - ISM applications RFS Released 3,4,2
BLF882(S) Ceramic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.1
BLC2425M9XS250 Air-cavity plastic LDMOS transistor for RF Energy - ISM applications DEV Q3-16 3.4.5
BLF182XR(S) XR ceramic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLF6G13LS-250PG Ceramic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.3
BLP05H6250XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLC2425M8LS300P Air-cavity plastic LDMOS transistor for RF Energy - ISM applications DEV Q2-16 3.4.5
BLP05H6350XR XR plastic LDMOS transistor for broadcast/RF Energy - ISM applications RFS Released 3.3.2
BLC2425M9XS500P Air-cavity plastic LDMOS transistor for RF Energy - ISM applications DEV Q1-17 3.4.5
BLF0910H6LS500 Ceramic LDMOS transistor for RF Energy - ISM applications DEV Q3-16 3.4.4
BLC2425M9LS700PV Air-cavity plastic LDMOS transistor for RF Energy - ISM applications DEV Q4 -16 3.4.5
BLP05H6700XR(G) Plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q2-16 3.4.3
BLF888E(S) Ceramic LDMOS transistor for broadcast applications DEV Q2-16 3.3.1
BLF898(S) Ceramic LDMOS transistor for broadcast applications DEV Q3-16 3.3.1
BLF0910H6LS1000P Ceramic LDMOS transistor for RF Energy - ISM applications DEV Q1-17 3.4.4
BLCU188XRS Air-cavity plastic LDMOS transistor for broadcast/RF Energy - ISM applications DEV Q4-16 3.3.2
NEW: RF Power LDMOS Transistors for Avionics Applications
BLA6H0912L(S)-1000 Ceramic LDMOS power transistor for avionics applications RFS Released 3.5.1
NEW: RF Power LDMOS Transistors for S-band Applications
BLS9G2735L(S)-50 Ceramic LDMOS transistor for S-band radar applications DEV Q3-16 3.5.3
BLS8G2731L(S)-400P Ceramic LDMOS transistor for S-band radar applications RFS Released 3.5.3
BLS9G2731L(S)-400(G) Ceramic LDMOS transistor for S-band radar applications DEV Q4-16 3.5.3
BLS9G2934L(S)-400 Ceramic LDMOS transistor for S-band radar applications DEV Q2-16 3.5.3
BLS9G3135L(S)-400 Ceramic LDMOS transistor for S-band radar applications DEV Q2-16 3.5.3
NEW: Gallium Nitride (GaN) RF Power Transistors for Broadband Applications
CLF1G0060(S)-10 Gen1 GaN HEMT for broadband applications RFS Released 3.6
CLF1G0060(S)-30 Gen1 GaN HEMT for broadband applications RFS Released 3.6
CLF1G0035S-50 Gen1 GaN HEMT for broadband applications RFS Released 3.6
CLF1G0035(S)-100P Gen1 GaN HEMT for broadband applications RFS Released 3.6
CLF1G0035S-100 Gen1 GaN HEMT for broadband applications RFS Released 3.6
CLF1G0035(S)-200P Gen1 GaN HEMT for broadband applications RFS Released 3.6
BLFSG LS soABGVT : v/deo demup/mg Input/ta! mxnje v , V-leadsfor external deroup/mg Gullwrng-maped leads Current sense lead was pawer(exceptlon PAD > 250w and GaN : Pads) Ear/€55 ptxkage flange materrat L : CPC, X : Cu Frequency, examp‘e 22 : 2200 MH2,1822 :1800 to 2200 MHz G Standard LDMOS (standard suppty 23 V) D Integrated Doneny (28 V) H Htgh vu‘tage LDMOS (50 v)
4324/7 RF - Version 1 - 2016
RF Product
Portfolio
3.2 RF Power Transistors for Mobile Broadband
RF power transistor selection guide on www.ampleon.com/products/mobile-broadband
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for Mobile Broadband
T = video decoupling capacitor inside
V = V-leads for external decoupling
Gullwing-shaped leads
Current sense lead
P-1dB power (exception PAD > 250 W and GaN = P-3dB)
Earless package
Flange material
Frequency, example 22 = 2200 MHz, 1822 = 1800 to 2200 MHz
D: Integrated Doherty (28 V)
L = CPC, X = Cu
F: Ceramic package
C: Air-cavity plastic (ACP) package
M: MMIC
P: Overmolded plastic package (OMP)
L: High-frequency power transistor
B: Semiconductor die made of Si
G: Standard LDMOS (standard supply 28 V)
H: High voltage LDMOS (50 V)
C: Wide band-gap compound materials, e.g. GaN
Technology generation
AD: Advanced integrated Doherty (28 V)
U: Ultra linear (12 V)
A = Asymmetric doherty (PAD)
P = Symmetric doherty or push-pull configuration
W = Supply thru V-leads
Italic = Optional
GFL -150 A B G V TB L F 9 S
3.2.1 0.4 - 1.0 GHz LDMOS Transistors
Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
BLP7G22-05 SOT1179-2 700 2700 528 23 16 2-c W-CDMA
BLP8G27-5 SOT1371-1 700 2700 528 19 19 2-c W-CDMA
BLP6H10-10* SOT1352 400 1000 10 50 tbd tbd tbd
BLP7G22-10 SOT1179-2 700 2700 10 28 25 17.4 2-c W-CDMA
BLP8G27-10 SOT1371-1 700 2700 10 28 22 17 2-c W-CDMA
BLM8G0710-15B* SOT1462 700 1000 15 28 tbd tbd tbd
BLM8G0710S-15PB SOT1211-2 700 1000 15 28 27 36 1-c W-CDMA
BLM8G0710S-15PB(G) SOT1212-2 700 1000 15 28 27 36 1-c W-CDMA
BLM8G0710S-30PB SOT1211-2 700 1000 30 28 24 35.7 1-c W-CDMA
BLM8G0710S-30PBG SOT1212-2 700 1000 30 28 24 35.7 1-c W-CDMA
BLM8G0710S-45AB SOT1211-2 700 1000 45 28 23.4 35.6 1-c W-CDMA, Peaking section
BLM8G0710S-45ABG SOT1212-2 700 1000 45 28 23.4 35.6 1-c W-CDMA, Peaking section
BLP8G10S-45P SOT1223-2 700 1000 45 28 19.8 20.8 2-c W-CDMA
BLP8G10S-45PG SOT1224-2 700 1000 45 28 19.8 20.8 2-c W-CDMA
BLM8G0710S-60PB SOT1211-2 700 1000 60 28 23.4 35.6 1-c W-CDMA
BLM8G0710S-60PBG SOT1212-2 700 1000 60 28 23.4 35.6 1-c W-CDMA
BLP7G07S-140P SOT1223-2 700 1000 140 28 29.6 20.9 2-c W-CDMA
* Check status in section 3.1, as this type is not yet released for mass production
44 24/7 RF - Version 1 - 2016
3.2.1 0.4 - 1.0 GHz LDMOS Transistors (continued)
(1) P3dB
* Check status in section 3.1, as this type is not yet released for mass production
3.2.2 1.3 - 1.7 GHz LDMOS Transistors
Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
BLP7G22-05 SOT1179-2 700 2700 5 28 23 16 2-c W-CDMA
BLP8G27-5 SOT1371-1 700 2700 5 28 19 19 2-c W-CDMA
BLP7G22-10 SOT1179-2 700 2700 10 28 25 17.4 2-c W-CDMA
BLP8G27-10 SOT1371-1 700 2700 10 28 22 17 2-c W-CDMA
BLP8G1522-20* SOT1462 1500 2200 20 28 tbd tbd tbd
BLF7G15LS-200 SOT502B 1450 1550 200 28 29 19.5 2-c W-CDMA
BLF7G15LS-300P SOT539B 1450 1550 300 28 31 18 2-c W-CDMA
BLC9G15LS-400AVT SOT1258-3 1452 1511 400 (1) 32 51 16.2 1-c W-CDMA
BLC9G15XS-400AVT* SOT1258 1452 1511 400 (1) 28 tbd tbd tbd
Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
BLF6H10LS-160 SOT467B 729 960 160 50 34 20 2-c W-CDMA
BLF8G10L(S)-160 SOT502A(B) 920 960 160 30 29 19.7 2-c W-CDMA
BLF8G10LS-160V SOT1244B 925 960 160 30 30 19.9 2-c W-CDMA
BLP8G05S-200 SOT1138-2 400 500 200 28 77 21 CW
BLP8G05S-200G SOT1204-2 400 500 200 28 77 21 CW
BLF7G10L(S)-250 SOT502A(B) 920 960 250 30 30.5 19.5 2-c W-CDMA
BLF8G09LS-270G(W) SOT1244C(B) 716 960 270 28 33 20 2-c W-CDMA
BLF8G10LS-270 SOT502B 820 960 270 28 33 18.5 2-c W-CDMA
BLF8G10LS-270(G)V SOT1244B(C) 790 960 270 28 31 19.5 2-c W-CDMA
BLP8G10S-270PW SOT1221-2 700 900 270 28 46 17. 3 1-c W-CDMA
BLF8G10LS-300P SOT539B 700 1000 300 28 32 20.5 2-c W-CDMA
BLC9H10XS-400P* SOT1273 700 1000 400 50 tbd tbd tbd
BLF8G09LS-400P(G)W SOT1242B(C) 716 960 400 28 30 20.6 2-c W-CDMA
BLC8G09XS-400AWT* SOT1258-3 800 1000 400 (1) 32 tbd tbd tbd
BLC9H10XS-400A* SOT1273 800 1000 400 (1) 50 tbd tbd tbd
3.2.3 1.8 - 2.0 GHz LDMOS Transistors
Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
BLM8G1822-3B* SOT1179 1800 2200 3 28 tbd tbd tbd
BLP7G22-05 SOT1179-2 700 2700 5 28 23 16 2-c W-CDMA
BLP8G27-5 SOT1371-1 700 2700 5 28 19 19 2-c W-CDMA
BLM8G1822-6B* SOT1179 1800 2200 6 28 tbd tbd tbd
BLP7G22-10 SOT1179-2 700 2700 10 28 25 17.4 2-c W-CDMA
BLP8G27-10 SOT1371-1 700 2700 10 28 22 17 2-c W-CDMA
BLM7G1822S-20PB SOT1211-2 1805 2170 20 28 23 32.3 1-c W-CDMA
BLM7G1822S-20PBG SOT1212-2 1805 2170 20 28 23 32.3 1-c W-CDMA
BLM8G1822-20B* SOT1462 1800 2200 20 28 tbd tbd tbd
BLP8G1522-20* SOT1462 1500 2200 20 28 tbd tbd tbd
BLM8D1822-25B* SOT1462 1800 2200 25 28 tbd tbd tbd
BLM7G1822S-40AB SOT1211-2 1805 2170 40 28 25.5 31.3 1-c W-CDMA, Peaking section
BLM7G1822S-40ABG SOT1212-2 1805 2170 40 28 25.5 31.3 1-c W-CDMA, Peaking section
BLF6G22LS-40P SOT1121B 2110 2170 40 28 30 19 2-c W-CDMA
BLM7G1822S-40PB SOT1211-2 1805 2170 40 28 25 31.5 1-c W-CDMA
BLM7G1822S-40PBG SOT1212-2 1805 2170 40 28 25 31 1-c W-CDMA
BLM8D1822S-50PB SOT1211-2 1805 2170 50 28 37 26.5 1-c W-CDMA
BLM8D1822S-50PBG SOT1212-2 1805 2170 50 28 37 26.5 1-c W-CDMA
BLM7G1822S-80AB SOT1211-2 1805 2170 80 28 24 28.3 1-c W-CDMA, Peaking section
BLM7G1822S-80ABG SOT1212-2 1805 2170 80 28 24 28.3 1-c W-CDMA, Peaking section
BLM7G1822S-80PB SOT1211-2 1805 2170 80 28 24 28 1-c W-CDMA
BLM7G1822S-80PBG SOT1212-2 1805 2170 80 28 24 28 1-c W-CDMA
BLP8G20S-80P SOT1223-2 1800 2200 80 28 33 17.5 2-c W-CDMA
BLC9G20LS-120V SOT1275-3 1805 1995 120 28 31 19.2 2-c W-CDMA
BLF8G20LS-140GV SOT1244C 1805 1990 140 28 32 18.5 2-c W-CDMA
BLF8G20LS-140V SOT1244B 1805 1990 140 28 32 18.5 2-c W-CDMA
4524/7 RF - Version 1 - 2016
RF Product
Portfolio
3.2.3 1.8 - 2.0 GHz LDMOS Transistors (continued)
(1) P3dB
* Check status in section 3.1, as this type is not yet released for mass production
Type Package Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
vDS
(V)
ηD
(%)
Gp
(dB) Test signal
BLC8G21LS-160AV SOT1275-1 1805 2025 160 28 45 15 1-c W-CDMA
BLC9G20LS-160PV* SOT1275-1 1805 2000 160 28 tbd tbd tbd
BLC9G20XS-160AV* SOT1275-1 1800 2000 160 30 tbd tbd tbd
BLF8G20LS-160V SOT1239B 1800 2000 160 28 34 20 2-c W-CDMA
BLF9G20LS-160V SOT1120B 1800 2000 160 28 33.5 19.8 2-c W-CDMA
BLF8G19LS-170BV SOT1120B 1800 1990 170 32 32 18 2-c W-CDMA