STF13N60DM2 Datasheet by STMicroelectronics

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TO-220FP
123
AM15572v1_no_tab
D(2)
G(1)
S(3)
Order codes VDS RDS(on) max. ID
STF13N60DM2 600 V 0.365 Ω 11 A
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
• Zener-protected
Applications
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status links
STF13N60DM2
Product summary
Order code STF13N60DM2
Marking 13N60DM2
Package TO-220FP
Packing Tube
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
STF13N60DM2
Datasheet
DS11595 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ±25 V
ID
Drain current (continuous) at Tcase = 25 °C 11 (1)
A
Drain current (continuous) at Tcase = 100 °C 7 (1)
IDM (2) Drain current (pulsed) 44 (1) A
PTOT Total power dissipation at Tcase = 25 °C 25 W
dv/dt (3) Peak diode recovery voltage slope 40
V/ns
dv/dt(4) MOSFET dv/dt ruggedness 50
VISO
Insulation withstand voltage (RMS) from all three leads to external heat
sink (t = 1 s; TC = 25 °C) 2500 V
Tstg Storage temperature range
-55 to 150 °C
TjOperating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
4. VDS ≤ 480 V.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 5
°C/W
Rthj-amb Thermal resistance junction-ambient 62.5
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not repetitive
(Pulse width limited by Tjmax)2.5 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 340 mJ
STF13N60DM2
Electrical ratings
DS11595 - Rev 3 page 2/13
2Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 600 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 600 V 1.5
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C (1) 100
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on) Static drain-source on-
resistance VGS = 10 V, ID = 5.5 A 0.310 0.365 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
- 730 -
pF
Coss Output capacitance - 38 -
Crss Reverse transfer capacitance - 0.9 -
Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 70 - pF
RGIntrinsic gate resistance f = 1 MHz, ID= 0 A - 5.1 - Ω
QgTotal gate charge VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
- 19 -
nC
Qgs Gate-source charge - 4.4 -
Qgd Gate-drain charge - 9.9 -
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 13. Test circuit
for resistive load switching times and
Figure 18. Switching time waveform)
- 12.3 -
ns
trRise time - 4.8 -
td(off) Turn-off delay time - 42.5 -
tfFall time - 10.6 -
STF13N60DM2
Electrical characteristics
DS11595 - Rev 3 page 3/13
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 11 A
ISDM (1) Source-drain current (pulsed) - 44 A
VSD (2) Forward on voltage VGS = 0 V, ISD = 11 A - 1.6 V
trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
- 90 ns
Qrr Reverse recovery charge - 252 nC
IRRM Reverse recovery current - 5.6 A
trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 15. Test circuit
for inductive load switching and diode
recovery times)
- 170 ns
Qrr Reverse recovery charge - 667 nC
IRRM Reverse recovery current - 8.6 A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for
additional external componentry.
STF13N60DM2
Electrical characteristics
DS11595 - Rev 3 page 4/13
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG080420161019SOA
10 1
10 0
10 -1
10 -1 10 0 10 1 10 2
ID
(A)
VDS (V)
tp =1 µs
tp =10 µs
tp =1 ms
tp =10 ms
tp =100 µs
single pulse
TJ150 °C
TC=25 °C
VGS=10 V
Operation in this area
is limited by R
DS(on)
Figure 2. Thermal impedance
δ=0.5
K
tp(s)
10-4 10-3 10 -1
10 -2
δ=0.2
10-2
10-3
10 0
10-1
Single pulse
0.05
0.02
0.01
0.1
GC20940_ZTH
Figure 3. Output characteristics
GIPG070420161613OCH
25
20
15
10
5
00 4 8 12 16
I D
(A)
V DS (V)
V GS = 5 V
V GS = 8, 9, 10 V
V GS = 6 V
V GS = 7 V
Figure 4. Transfer characteristics
GIPG070420161613TCH
25
20
15
10
5
00 2 4 6 8 10
I D
(A)
V GS (V)
V DS = 20 V
Figure 5. Gate charge vs gate-source voltage
GIPG070420161614QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0 4 8 12 16 20
V GS
(V)
V DS
(V)
Q g (nC)
V DD = 480 V
I D = 11 A
V DS
Figure 6. Static drain-source on-resistance
GIPG070420161610RID
0.33
0.32
0.31
0.3
0.290 2 4 6 8 10
R DS(on)
(Ω)
I D (A)
V GS =10 V
STF13N60DM2
Electrical characteristics (curves)
DS11595 - Rev 3 page 5/13
ewenmmmusos supmmmmmsnr
Figure 7. Capacitance variations
GIPG070420161612CVR
10 3
10 2
10 1
10 0
10 -1
10 -1 10 010 110 2
C
(pF)
V DS (V)
C ISS
C OSS
C RSS
f = 1 MHz
Figure 8. Normalized gate threshold voltage vs
temperature
GIPG060420161230VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125
V GS(th)
(norm.)
T j (°C)
I D = 250 µA
Figure 9. Normalized on-resistance vs temperature
GIPG070420161233RON
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125
R DS(on)
(norm.)
T j (°C)
V GS = 10 V
Figure 10. Normalized V(BR)DSS vs temperature
GIPG060420161354BDV
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125
V (BR)DSS
(norm.)
T j (°C)
I D = 1 mA
Figure 11. Output capacitance stored energy
GIPG070420161614EOS
5
4
3
2
1
00 100 200 300 400 500 600
E OSS
(µJ)
V DS (V)
Figure 12. Source- drain diode forward characteristics
GIPG070420161612SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.50 2 4 6 8 10
V SD
(V)
I SD (A)
T j = -50 °C
T j = 150 °C
T j = 25 °C
STF13N60DM2
Electrical characteristics (curves)
DS11595 - Rev 3 page 6/13
3Test circuits
Figure 13. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF
+
pulse width
VGS
Figure 14. Test circuit for gate charge behavior
AM01469v1
47 kΩ 1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST 100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 15. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
SB
G
25 Ω
AA
BB
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 16. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STF13N60DM2
Test circuits
DS11595 - Rev 3 page 7/13
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
STF13N60DM2
Package information
DS11595 - Rev 3 page 8/13
L7 *3, L6 .31— «i6 L2 L4 L3
4.1 TO-220FP package information
Figure 19. TO-220FP package outline
7012510_Rev_12_B
STF13N60DM2
TO-220FP package information
DS11595 - Rev 3 page 9/13
Table 9. TO-220FP package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
STF13N60DM2
TO-220FP package information
DS11595 - Rev 3 page 10/13
Revision history
Table 10. Document revision history
Date Revision Changes
08-Apr-2016 1 First release.
07-Dec-2016 2 Document status promoted from preliminary to production data.
29-Nov-2018 3 Modified Figure 1. Safe operating area.
Minor text changes.
STF13N60DM2
DS11595 - Rev 3 page 11/13
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................7
4Package information...............................................................8
4.1 TO-220FP package information ..................................................8
Revision history .......................................................................11
STF13N60DM2
Contents
DS11595 - Rev 3 page 12/13
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STF13N60DM2
DS11595 - Rev 3 page 13/13

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