STF12N50DM2 Datasheet by STMicroelectronics

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March 2016
DocID026809 Rev 2
1/13
This is information on a product in full production.
www.st.com
STF12N50DM2
N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
RDS(on) max.
ID
STF12N50DM2
500 V
0.350 Ω
11 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh DM2 fast recovery diode
series. It offers very low recovery charge and
time (Qrr, trr) combined with low RDS(on),
rendering it suitable for the most demanding high
efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STF12N50DM2
12N50DM2
TO-220FP
Tube
TO-220FP
123
Contents
STF12N50DM2
2/13
DocID026809 Rev 2
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220FP package information ...................................................... 10
5 Revision history ............................................................................ 12
STF12N50DM2
Electrical ratings
DocID026809 Rev 2
3/13
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID(1)
Drain current (continuous) at TC = 25 °C
11
A
ID(1)
Drain current (continuous) at TC= 100 °C
8
IDM(2)
Drain current (pulsed)
44
A
PTOT
Total dissipation at TC = 25 °C
25
W
dv/dt (3)
Peak diode recovery voltage slope
40
V/ns
dv/dt (4)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s, TC = 25 °C)
2500
V
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by safe operating area.
(3) ISD 11 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
(4) VDS 400 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
2.5
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
320
mJ
Electrical characteristics
STF12N50DM2
4/13
DocID026809 Rev 2
2 Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0 V, ID = 1 mA
500
V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 500 V
1
µA
VGS = 0 V, VDS = 500 V,
TC = 125 °C(1)
100
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
0.299
0.350
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS= 100 V, f = 1 MHz,
VGS = 0 V
-
628
-
pF
Coss
Output capacitance
-
38
-
pF
Crss
Reverse transfer
capacitance
-
1.2
-
pF
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 V to 400 V, VGS = 0 V
-
69
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 11 A,
VGS = 10 V (see Figure 15: "Test
circuit for gate charge behavior")
-
16
-
nC
Qgs
Gate-source charge
-
4.6
-
nC
Qgd
Gate-drain charge
-
7
-
nC
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 250 V, ID = 5.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
12.5
-
ns
tr
Rise time
-
9
-
ns
td(off)
Turn-off-delay time
-
28
-
ns
tf
Fall time
-
9.8
-
ns
STF12N50DM2
Electrical characteristics
DocID026809 Rev 2
5/13
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
11
A
ISDM(1)
Source-drain current
(pulsed)
-
44
A
VSD (2)
Forward on voltage
VGS = 0 V, ISD = 11 A
-
1.6
V
trr
Reverse recovery
time
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
140
ns
Qrr
Reverse recovery
charge
-
0.707
µC
IRRM
Reverse recovery
current
-
10.1
A
trr
Reverse recovery
time
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
190
ns
Qrr
Reverse recovery
charge
-
1.111
µC
IRRM
Reverse recovery
current
-
11.7
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STF12N50DM2
6/13
DocID026809 Rev 2
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Normalized gate threshold voltage
vs. temperature
Figure 7: Normalized V(BR)DSS vs.
temperature
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STF12N50DM2
Electrical characteristics
DocID026809 Rev 2
7/13
Figure 8: Static drain-source on-resistance
Figure 9: Normalized on-resistance vs.
temperature
Figure 10: Gate charge vs. gate-source
voltage
Figure 11: Capacitance variations
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
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Test circuits
STF12N50DM2
8/13
DocID026809 Rev 2
3 Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STF12N50DM2
Package information
DocID026809 Rev 2
9/13
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package information
STF12N50DM2
10/13
DocID026809 Rev 2
4.1 TO-220FP package information
Figure 20: TO-220FP package outline
7012510_Rev_K_B
STF12N50DM2
Package information
DocID026809 Rev 2
11/13
Table 9: TO-220FP package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Revision history
STF12N50DM2
12/13
DocID026809 Rev 2
5 Revision history
Table 10: Document revision history
Date
Revision
Changes
26-Aug-2014
1
First release.
07-Mar-2016
2
Text and formatting changes throughout document
In Section 1: "Electrical ratings":
- updated Table 4: "Avalanche characteristics"
In Section 2: "Electrical characteristics"
- updated Table 6: "Dynamic", Table 7: "Switching times" and Table
8: "Source drain diode"
Added Section 2.1: "Electrical characteristics (curves)"
Updated Section 4: "Package information"
STF12N50DM2
DocID026809 Rev 2
13/13
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