STB35N60DM2 Datasheet by STMicroelectronics

View All Related Products | Download PDF Datasheet
I 'l meaugmented m2 TAB) (3(1) NGmZTSzZ
September 2015
DocID028331 Rev 1
1/15
This is information on a product in full production.
www.st.com
STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
RDS(on)
max.
ID
PTOT
STB35N60DM2
600 V
0.110 Ω
28 A
210 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STB35N60DM2
35N60DM2
D²PAK
Tape and reel
13
TAB
D2PAK
Contents
STB35N60DM2
2/15
DocID028331 Rev 1
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 D²PAK (TO-263) type A package information ................................... 9
4.2 D²PAK packing information ............................................................. 12
5 Revision history ............................................................................ 14
STB35N60DM2
Electrical ratings
DocID028331 Rev 1
3/15
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
28
A
Drain current (continuous) at Tcase = 100 °C
17
IDM(1)
Drain current (pulsed)
112
A
PTOT
Total dissipation at Tcase = 25 °C
210
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 28 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400.
(3) VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.6
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
30
Notes:
(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
6
A
EAS(1)
Single pulse avalanche energy
650
mJ
Notes:
(1) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Electrical characteristics
STB35N60DM2
4/15
DocID028331 Rev 1
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
10
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 14 A
0.094
0.11
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input
capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
2400
-
pF
Coss
Output
capacitance
-
110
-
Crss
Reverse transfer
capacitance
-
2.8
-
Coss eq.(1)
Equivalent
output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
190
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID = 0 A
-
4.3
-
Ω
Qg
Total gate
charge
VDD = 480 V, ID = 28 A, VGS = 10 V (see
Figure 15: "Test circuit for gate charge
behavior")
-
54
-
nC
Qgs
Gate-source
charge
-
14.6
-
Qgd
Gate-drain
charge
-
24.2
-
Notes:
(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
STB35N60DM2
Electrical characteristics
DocID028331 Rev 1
5/15
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on
delay time
VDD = 300 V, ID = 14 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test circuit for
resistive load switching times" and Figure 19:
"Switching time waveform")
-
21.2
-
ns
tr
Rise time
-
17
-
td(off)
Turn-off
delay time
-
68
-
tf
Fall time
-
10.7
-
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain
current
-
28
A
ISDM(1)
Source-drain
current
(pulsed)
-
112
A
VSD(2)
Forward on
voltage
VGS = 0 V, ISD = 28 A
-
1.6
V
trr
Reverse
recovery time
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
-
120
ns
Qrr
Reverse
recovery
charge
-
572
nC
IRRM
Reverse
recovery
current
-
10.2
A
trr
Reverse
recovery time
ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
-
215
ns
Qrr
Reverse
recovery
charge
-
1.89
µC
IRRM
Reverse
recovery
current
-
17.7
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 µA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
In (M 1m1 11mm by 10' mus 11m us 1ms my, mum 1o" 10' 1 1o 1 VnsM u A a 1 2 1 e VDs (V) 1r, (A) 50 so 40 20 u z 4 6 a v5s 1v) vnu= 480 V. (V) son 5017 400 300 200 100 u u 10 20 30 AG 50 so 011nm Roman 10) u 100 0.095 n 090 o 065 o 10 2a '17 1A)
Electrical characteristics
STB35N60DM2
6/15
DocID028331 Rev 1
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
K
tpƬ
Zth= K*Rthj-c
δ= tp/Ƭ
Single pulse
0.01
δ=0.5
10-1
10-2
10-4
10-5 10-3 10-2 10-1 tP(s)
0.2
0.1
0.05
0.02
E] 19F) 10‘ 1o3 101 10‘ 10“ 1a" sts Cass Cu: 10" 10‘ 161 V95 (V) Veskm (norm ) 1 1 1 o n 9 o a o 7 D 6 ,75 ,25 25 75 125 n ('6’ Rnsyam Vumuss (norm) (norm) 22 112 103 1a 104 14 100 1.0 095 06 092 0.2 038 ,75 725 25 75 125 mm) -75 -25 25 75 125 met Eoss (w) 15 12 as (V) 1A)
STB35N60DM2
Electrical characteristics
DocID028331 Rev 1
7/15
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
22m: 3 J V“ , Rs u u r rn mun an 4* H» I i J,- L 30% W K17
Test circuits
STB35N60DM2
8/15
DocID028331 Rev 1
3 Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
E] \ ‘ \ .i[ 4. 24 1/2. c T L1 3 _._ \ J‘ n LU, L2 = J1 b 4,9,- L ' b2 47%.: .JL. SEATING PLANE —> C OPLANAR/TY A I DI THERMAL FAD GAL/GE PLANE
STB35N60DM2
Package information
DocID028331 Rev 1
9/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 D²PAK (TO-263) type A package information
Figure 20: D²PAK (TO-263) type A package outline
0079457_A_rev22
Package information
STB35N60DM2
10/15
DocID028331 Rev 1
Table 10: D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
10.40
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
0.4
V2
E] 722 4. 7.5 * 254 4‘7 J 5.08 3.5 76.9 rompm
STB35N60DM2
Package information
DocID028331 Rev 1
11/15
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
5‘ m mamme vehon‘v nzludmg arm and «GM mmmncamund an m Wm cumu‘auve \u‘evanze an Iape Hr 02 mm stldvemonolfesd 9 ¢ ¢ o R l ’ Benqu radlus Um Amman 04 lead AMOESSZVI
Package information
STB35N60DM2
12/15
DocID028331 Rev 1
4.2 D²PAK packing information
Figure 22: Tape
E] 40mm mil. access hole it slot locatim Tape sto‘ in we br tape sun 25mm minim \ G magnum Bflmb AMDSOGBM
STB35N60DM2
Package information
DocID028331 Rev 1
13/15
Figure 23: Reel
Table 11: D²PAK tape and reel mechanical data
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
330
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
13.2
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
26.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
30.4
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Revision history
STB35N60DM2
14/15
DocID028331 Rev 1
5 Revision history
Table 12: Document revision history
Date
Revision
Changes
08-Sep-2015
1
Initial version
STB35N60DM2
DocID028331 Rev 1
15/15
IMPORTANT NOTICE PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications , and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics All rights reserved

Products related to this Datasheet

MOSFET N-CH 600V 28A D2PAK
Available Quantity: 9
Unit Price: 7.99
MOSFET N-CH 600V 28A D2PAK
Available Quantity: 0
Unit Price: 4.79979
MOSFET N-CH 600V 28A D2PAK
Available Quantity: 9
Unit Price: 7.99