TJF1052i Datasheet by NXP USA Inc.

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1. General description
The TJF1052i is a high-speed CAN transceiver that provides a galvanically isolated
interface between a Controller Area Network (CAN) protocol controller and the physical
two-wire CAN bus. The TJF1052i is specifically targeted at industrial applications, where
galvanic isolation barriers are needed between the high- and low-voltage parts.
Safety: Isolation is required for safety reasons, eg. to protect humans from electric shock
or to prevent the electronics being damaged by high voltages.
Signal integrity: The isolator uses proprietary capacitive isolation technology to transmit
and receive CAN signals. This technology enables more reliable data communications in
noisy environments, such as electric pumps, elevators or industrial equipment.
Performance: The transceiver is designed for high-speed CAN applications, supplying
the differential transmit and receive capability to a CAN protocol controller in a
microcontroller. Integrating the galvanic isolation along with the transceiver in the
TJF1052i removes the need for stand-alone isolation. It also improves reliability and
system performance parameters such as loop delay.
The TJF1052i belongs to the third generation of high-speed CAN transceivers from NXP
Semiconductors, offering significant improvements over first- and second-generation
devices. It offers improved ElectroMagnetic Compatibility (EMC) and ElectroStatic
Discharge (ESD) performance, and also features ideal passive behavior to the CAN bus
when the transceiver supply voltage is off.
The TJF1052i implements the CAN physical layer as defined in the current ISO11898
standard (ISO11898-2:2003). Pending the release of ISO11898-2:2016 including CAN FD
and SAE J2284-4/5, additional timing parameters defining loop delay symmetry are
specified. This implementation enables reliable communication in the CAN FD fast phase
at data rates up to 5 Mbit/s.
The TJF1052i is an excellent choice for all types of industrial CAN networks where
isolation is required for safety reasons or to enhance signal integrity in noisy
environments.
2. Features and benefits
2.1 General
Isolator and Transceiver integrated into a single SO16 package, reducing board space
ISO 11898-2:2003 compliant
Timing guaranteed for data rates up to 5 Mbit/s in the CAN FD fast phase
Flawless cooperation between the Isolator and the Transceiver
TJF1052i
Galvanically isolated high-speed CAN transceiver
Rev. 3 — 20 May 2016 Product data sheet
CAN
TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 2 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
Fewer components improves reliability in applications
Guaranteed performance (eg. max loop delay <220 ns)
Electrical transient immunity of 45 kV/s (typ)
Suitable for use in 12 V and 24 V systems; compatible with 3 V to 5 V microcontrollers
Bus common mode voltage (Vcm) = 25 V
Low ElectroMagnetic Emission (EME) and high ElectroMagnetic Immunity (EMI)
Dark green product (halogen free and Restriction of Hazardous Substances (RoHS)
compliant)
2.2 Power management
Functional behavior predictable under all supply conditions
Transceiver disengages from the bus when not powered up (zero load)
2.3 Protection
Up to 5 kV (RMS) rated isolation
Three versions available (1 kV, 2.5 kV and 5 kV)
Voltage compliant with UL 1577, IEC 61010 and IEC 60950
5 kV (RMS) rated isolation voltage compliant with UL 1577, IEC 61010 and IEC 60950
High ESD handling capability on the bus pins
Transmit Data (TXD) dominant time-out function
Undervoltage detection on supply pins
3. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IDD1 supply current 1 VTXD = 0 V; bus dominant - - 2.6 mA
VTXD =V
DD1; bus recessive - - 5.6 mA
IDD2 supply current 2 VTXD = 0 V; bus dominant; 60 load - - 70 mA
VTXD =V
DD1; bus recessive - - 10 mA
Vuvd(swoff)(VDD2) switch-off undervoltage
detection voltage on pin VDD2
1.3 - 2.7 V
VESD electrostatic discharge voltage IEC 61000-4-2 at pins CANH and CANL 8- +8kV
VCANH voltage on pin CANH 58 - +58 V
VCANL voltage on pin CANL 58 - +58 V
Tvj virtual junction temperature 40 - +125 C
Tamb ambient temperature 40 - +105 C
. A g \ \ \ \ GNDI STE GND2
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Product data sheet Rev. 3 — 20 May 2016 3 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
4. Ordering information
5. Block diagram
Table 2. Ordering information
Type number Package
Name Description Version
TJF1052IT/5
TJF1052IT/2
TJF1052IT/1
SO16 plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
Table 3. Voltage ratings
Type number Rated insulation voltage according to
UL 1577, IEC 61010 and IEC 60950
TJF1052IT/5 5 kV (RMS)
TJF1052IT/2 2.5 kV (RMS)
TJF1052IT/1 1 kV (RMS)
Fig 1. Block diagram
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 4 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
6. Pinning information
6.1 Pinning
6.2 Pin description
[1] All GND1 pins (pins 2, 7 and 8) should be connected together and to ground domain 1. All GND2 pins (pins
9, 10 and 15) should be connected together and to ground domain 2. Refer to the application notes for
further information.
[2] Setting STB HIGH disables the CAN bus connection.
Fig 2. Pin configuration diagram
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Table 4. Pin description
Symbol Pin Description
VDD1 1 supply voltage 1
GND1 2 ground supply 1[1]
TXD 3 transmit data input
n/c 4 not connected
RXD 5 receive data output; reads out data from the bus lines
n/c 6 not connected
GND1 7 ground supply 1[1]
GND1 8 ground supply 1[1]
GND2 9 ground supply 2[1]
GND2 10 ground supply 2[1]
VDD2 11 supply voltage 2
CANL 12 LOW-level CAN bus line
CANH 13 HIGH-level CAN bus line
STB 14 Standby mode control input[2]
GND2 15 ground supply 2[1]
VDD2 16 supply voltage 2
Figure 1 Table 5 e Secfion 12 “Agglication information" Secfion 7.2.2
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Product data sheet Rev. 3 — 20 May 2016 5 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
7. Functional description
7.1 Operation
7.1.1 Normal mode
During normal operation, the TJF1052i transceiver transmits and receives data via bus
lines CANH and CANL (see Figure 1 for the block diagram). The differential receiver
converts the analog data on the bus lines into digital data, which is output on pin RXD.
The slopes of the output signals on the bus lines are controlled internally and are
optimized in a way that guarantees the lowest possible EME.
The isolator used in the TJF1052i is an AC device that employs on-off keying to guarantee
the DC output state at all times. The states of TXD, RXD and the CAN bus at start-up,
shut-down and during normal operation are described in Table 5.
Care should be taken regarding power sequencing if the device is used in networks that
support remote wake-up (see Section 12 “Application information).
7.1.2 Standby mode
The TJF1052i cannot transmit or receive regular CAN messages in Standby mode. Only
the isolator and low-power CAN receiver are active, monitoring the bus lines for activity.
The bus wake-up filter ensures that only bus dominant and bus recessive states that
persist longer than tfltr(wake)bus are reflected on the RXD pin. To reduce current
consumption, the CAN bus is terminated to GND and not biased to VDD2/2 as in Normal
mode.
Standby mode is selected by setting pin STB HIGH. The TJF1052i also switches to
Standby mode when an undervoltage is detected on VDD2 (Vuvd(swoff)(VDD2) < VDD2 <
Vuvd(stb)(VDD2); Section 7.2.2). An internal pull-up ensures that Standby mode is selected
by default when pin STB is not connected.
In Standby mode:
The CAN transmitter if off
The normal CAN receiver is off
The low-power CAN receiver is active
CANH and CANL are biased to GND
The signal received at the low-power CAN receiver is reflected on pin RXD
VDD2 undervoltage detection is active
Table 5. Input/output states at start-up, shut-down and during normal operation
TXD RXD VDD1 VDD2 CAN Comments
HH>V
uvd(VDD1) >Vuvd(stb)VDD2) recessive Normal mode operation
LL>V
uvd(VDD1) >Vuvd(stb)VDD2) dominant Normal mode with TXD dominant time-out active
X X unpowered >Vuvd(stb)VDD2) dominant dominant after VDD1 power loss until TXD dominant
timeout; recessive while VDD2 is ramping up from
an unpowered state
XL>V
uvd(VDD1) unpowered disconnected RXD transitions L-to-H when VDD2 restored
ass-022559
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Product data sheet Rev. 3 — 20 May 2016 6 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
The isolation function of the TJF1052i is not disabled in Standby mode. Overall quiescent
current is not reduced significantly in this mode. The TJF1052i is not designed to support
CAN bus wake-up functionality with very low quiescent currents.
7.2 Fail-safe features
7.2.1 TXD dominant time-out function
A ‘TXD dominant time-out’ timer is started when pin TXD goes LOW. If the LOW state on
TXD persists for longer than tto(dom)TXD, the transmitter is disabled, releasing the bus lines
to recessive state. This function prevents a hardware and/or software application failure
from driving the bus lines to a permanent dominant state (blocking all network
communications). The TXD dominant time-out timer is reset by a positive edge on TXD.
The TXD dominant time-out time also defines the minimum possible bit rate of 40 kbit/s.
7.2.2 Undervoltage protection: VDD2
If the voltage on pin VDD2 falls below the standby threshold, Vuvd(stb)(VDD2), the transceiver
switches to Standby mode. The TJF1052i will remain in Standby mode until VDD2 rises
above Vuvd(stb)(VDD2) (max). The low-power receiver continues to monitor the bus while the
TJF1052i is in Standby mode. Data on the bus is still reflected onto RXD, but the transfer
speed is reduced.
If the voltage on VDD2 falls below the switch-off threshold, Vuvd(swoff)(VDD2), the transceiver
switches off and disengages from the bus (zero load). It is guaranteed to switch on again
in Standby mode when VDD2 rises above Vuvd(swoff)(VDD2) (max).
7.2.3 Undervoltage protection: VDD1
If the voltage on pin VDD1 falls below the undervoltage detection threshold, Vuvd(VDD1), the
CAN bus switches to dominant state and the TXD dominant timeout timer is started. RXD
will not go high again until the supply voltage has been restored on VDD1 (VDD1 >
Vuvd(VDD1)).
Fig 3. Wake-up timing
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Product data sheet Rev. 3 — 20 May 2016 7 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
7.2.4 Overtemperature protection
The output drivers are protected against overtemperature conditions. If the virtual junction
temperature exceeds the shutdown junction temperature, Tj(sd), the output drivers are
disabled. They are enabled again when the virtual junction temperature falls below Tj(sd)
and TXD is HIGH. Including the TXD condition ensures that output driver oscillation due to
temperature drift is avoided.
7.3 Insulation characteristics and safety-related specifications
[1] Based on the measured data in the package outline. dL(IO1) is the clearance distance. Note that the clearance distance cannot be larger
than the creepage distance (dL(IO2)).
[2] Based on the measured data in the package outline. dL(IO2) is the creepage distance. According to IEC 60950-1, normative annex F
(also IEC60664 chapter 6.2, Example 11), the effective minimum external tracking is 1.0 mm less due to the presence of an intervening,
unconnected conductive part.
[3] Guaranteed by design at a voltage differential of 500 V with the pins on each side of the isolation barrier connected together, simulating
a 2-pin device.
Table 6. Isolator characteristics
Symbol Parameter Conditions Min Typ Max Unit
dL(IO1) minimum air gap [1] 8.6 - - mm
dL(IO2) minimum external tracking [2] 8.1 - - mm
Rins insulation resistance TA= 125 C[3] 100 - - G
TA= 150 C[3] 10 - - G
- pollution degree - 2 - - -
- material group (IEC 60664) 2 - - -
insulation,
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Product data sheet Rev. 3 — 20 May 2016 8 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
[1] The working voltage is the input-to-output voltage that can be applied without time limit. Which TJF1052i variant should be selected
depends on the overvoltage category and the related insulation voltage.
[2] UL stress test is performed at higher than IEC-specified levels.
[3] Based on transient overvoltages as indicated in IEC60664; creepage and clearance distances not taken into account.
[4] Reinforced insulation should have an impulse withstand voltage one step higher than that specified for basic insulation.
Table 7. Working voltages and isolation
Insulation Characteristics
Parameter Standard TJA1052i/1 TJA1052i/2 TJA1052i/5
max. working insulation voltage
per IEC 60664 (VIORM)[1] IEC 60664 300 VRMS 450 VRMS 800 VRMS
420 Vpeak 630 Vpeak 1120 Vpeak
max. transient overvoltage per
IEC 60664 (VIOTM)[2] tTEST =1.2/50 s (certification)
IEC 60664 2500 Vpeak 4000 Vpeak 6000 Vpeak
rated insulation voltage per
UL 1577 (VISO)UL 1577
tTEST = 60 s (qualification) 1000 VRMS 2500 VRMS 5000 VRMS
tTEST = 1 s (production) 1200 VRMS 3000 VRMS 6000 VRMS
Insulation classification in terms of Overvoltage Category[3]
Insulation type Max. working voltage TJA1052i/1 TJA1052i/2 TJA1052i/5
basic insulation[4] 150 VRMS I - III I - IV I - IV
300 VRMS I - II I - III I - IV
600 VRMS I I - II I - III
1000 VRMS --I - II
reinforced insulation[4] 150 VRMS I - II I - III I - IV
300 VRMS I I - II I - III
600 VRMS - I I - II
1000 VRMS --I
Table 8. Safety approvals
Standard File number
IEC 60950 CB NL-33788
IEC 61010-1 2nd Edition CB NL-33789
UL1577 20131213-E361297
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Product data sheet Rev. 3 — 20 May 2016 9 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
8. Limiting values
[1] The device can sustain voltages up to the specified values over the product lifetime, provided applied voltages (including transients)
never exceed these values.
[2] Referenced to GND1.
[3] According to IEC TS 62228 (2007), Section 4.2.4; parameters for standard pulses defined in ISO7637 part 2: 2004-06.
[4] According to IEC TS 62228 (2007), Section 4.3; DIN EN 61000-4-2.
[5] According to AEC-Q100-002.
[6] 8 kV to GND2 and VDD2; 6 kV to GND1.
[7] According to AEC-Q100-003.
[8] According to AEC-Q100-011 Rev-C1. The classification level is C4B.
[9] An alternative definition of virtual junction temperature is: Tvj =T
amb +PRth(vj-a), where Rth(vj-a) is a fixed value used in the calculation
of Tvj. The rating for Tvj limits the allowable combinations of power dissipation (P) and ambient temperature (Tamb).
[10] If UL compliance is required, the maximum storage temperature is limited to 130 C.
Table 9. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages and currents are referenced to GND2
unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Vxvoltage on pin x[1] on pins CANH, CANL 58 +58 V
on pin VDD1[2], VDD2 0.3 +6.0 V
on pin STB 0.3 VDD2 + 0.3 V
VIinput voltage on pin TXD [2] 0.3 VDD1 +0.3 V
VOoutput voltage on pin RXD [2] 0.3 VDD1 +0.3 V
IOoutput current on pin RXD [2] -10 mA
V(CANH-CANL) voltage between pin CANH
and pin CANL
27 +27 V
Vtrt transient voltage on pins CANH and CANL [3]
pulse 1 100 - V
pulse 2a - 75 V
pulse 3a 150 - V
pulse 3b - 100 V
VESD electrostatic discharge
voltage IEC 61000-4-2 (150 pF, 330 )[4]
at pins CANH and CANL 8+8 kV
Human Body Model (HBM); 100 pF, 1.5 k[5]
at pins CANH and CANL [6] 8+8 kV
at any other pin 4+4 kV
Machine Model (MM); 200 pF, 0.75 H, 10 [7]
at any pin 300 +300 V
Charged Device Model (CDM); field Induced
charge; 4 pF
[8]
at corner pins 750 +750 V
at any pin 500 +500 V
Tvj virtual junction temperature [9] 40 +125 C
Tamb ambient temperature 40 +105 C
Tstg storage temperature [10] 65 +150 C
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Product data sheet Rev. 3 — 20 May 2016 10 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
9. Thermal characteristics
10. Static characteristics
Table 10. Thermal characteristics
According to IEC 60747-1.
Symbol Parameter Conditions Value Unit
Rth(vj-a) thermal resistance from virtual junction to ambient in free air 100 K/W
Table 11. Static characteristics
Tvj =
40
C to +125
C; VDD1 = 3.0 V to 5.25 V with respect to GND1; VDD2 = 4.75 V to 5.25 V with respect to GND2 unless
otherwise specified. Positive currents flow into the IC. All voltages and currents are referenced to GND2 unless otherwise
specified[1].
Symbol Parameter Conditions Min Typ Max Unit
DC supplies; pin VDD1 and VDD2
IDD1 supply current 1 VDD1 = 3 V to 5 V[2]; VDD2 =5 V;
VTXD =0V
[2]; bus dominant --2.6mA
VDD1 = 3 V to 5 V[2]; VDD2 =5 V;
VTXD =V
DD1[2]; bus recessive --5.6mA
IDD2 supply current 2 VDD1 = 3 V to 5 V[2]; VDD2 =5 V;
VTXD =0V
[2]; bus dominant;
RL=60
--67.6mA
VDD1 = 3 V to 5 V[2]; VDD2 =5 V;
VTXD =V
DD1[2]; bus recessive;
VSTB = 0 V
--13.1mA
VDD1 = 3 V to 5 V[2]; VDD2 =5 V;
VTXD =V
DD1[2]; bus recessive;
VSTB = 5 V
--5.6mA
Vuvd(stb)(VDD2) standby undervoltage
detection voltage on pin VDD2
3.5 - 4.75 V
Vuvd(swoff)(VDD2) switch-off undervoltage
detection voltage on pin VDD2
1.3 - 2.7 V
Vuvd(VDD1) undervoltage detection
voltage on pin VDD1
[2] 1.3 - 2.7 V
Vuvhys undervoltage hysteresis
voltage on pin VDD1 [2] 40 - 100 mV
on pin VDD2 80 - 200 mV
CAN transmit data input; pin TXD
VIH HIGH-level input voltage [2] 2.0 - VDD1 V
VIL LOW-level input voltage [2] 0- 0.8V
ILI input leakage current [2] 10 - +10 A
CAN receive data output; pin RXD
VOH HIGH-level output voltage IOH = 4mA [2] VDD1
0.4 -- V
VOL LOW-level output voltage IOL =4mA [2] --0.4V
Standby mode control input; pin STB
VIH HIGH-level input voltage 0.7VDD2 -V
DD2 +
0.3 V
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Product data sheet Rev. 3 — 20 May 2016 11 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
VIL LOW-level input voltage 0.3 - 0.3VDD2 V
IIH HIGH-level input current VSTB =V
DD2 1- +1A
IIL LOW-level input current VSTB =0V 15 - 1A
Bus lines; pins CANH and CANL
VO(dom) dominant output voltage VTXD =0V; t<t
to(dom)TXD
pin CANH; RL=50to 65 2.75 3.5 4.5 V
pin CANL; RL=50to 65 0.5 1.5 2.25 V
Vdom(TX)sym transmitter dominant voltage
symmetry Vdom(TX)sym =
VDD2 VCANH VCANL
400 - +400 mV
VTXsym transmitter voltage symmetry VTXsym = VCANH +V
CANL;
fTXD = 250 kHz; CSPLIT =4.7nF
[3]
[4] 0.9VDD2 -1.1V
DD2 V
VO(dif) differential output voltage dominant; Normal mode
VTXD =0V; t<t
to(dom)TXD;
RL=45to 70
[2] 1.5 - 3 V
VTXD =0V; t<t
to(dom)TXD;
RL= 2240
[2] 1.5 - 5 V
recessive
Normal mode: VTXD =V
DD1; no
load
[2] 50 - +50 mV
Standby mode; no load 0.2 - +0.2 V
VO(rec) recessive output voltage Normal mode; VTXD =V
DD1;
no load
[2] 20.5V
DD2 3V
Vth(RX)dif differential receiver threshold
voltage Normal mode;
25 V VCANL +25 V;
25 V VCANH +25 V
0.5 - 0.9 V
Standby mode;
12 V VCANL +12 V;
12 V VCANH +12 V
[5] 0.4 - 1.15 V
Vrec(RX) receiver recessive voltage Normal mode;
12 V VCANL +12 V;
12 V VCANH +12 V
3- 0.5V
Vdom(RX) receiver dominant voltage Normal mode;
12 V VCANL +12 V;
12 V v VCANH +12 V
0.9 - 8.0 V
Vhys(RX)dif differential receiver
hysteresis voltage
25 V VCANL +25 V;
25 V VCANH +25 V;
Normal mode
- 165 - mV
IO(sc)dom dominant short-circuit output
current VTXD =0V
[2]; t < tto(dom)TXD;
VDD2 =5V
pin CANH;
VCANH =3V to +40V
100 70 40 mA
pin CANL; VCANL =3V to +40V 40 70 100 mA
IO(sc)rec recessive short-circuit output
current Normal mode; VTXD =V
DD1[2];
VCANH =V
CANL = 27 V to +32 V
5- +5mA
Table 11. Static characteristics …continued
Tvj =
40
C to +125
C; VDD1 = 3.0 V to 5.25 V with respect to GND1; VDD2 = 4.75 V to 5.25 V with respect to GND2 unless
otherwise specified. Positive currents flow into the IC. All voltages and currents are referenced to GND2 unless otherwise
specified[1].
Symbol Parameter Conditions Min Typ Max Unit
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Product data sheet Rev. 3 — 20 May 2016 12 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
[1] All parameters are guaranteed over the virtual junction temperature range by design. Factory testing uses correlated test conditions to
cover the specified temperature and power supply voltage range.
[2] Referenced to GND1.
[3] Not tested in production; guaranteed by design.
[4] The test circuit used to measure the bus output voltage symmetry (which includes CSPLIT) is shown in Figure 10.
[5] Standby mode entered when VDD2 falls below Vuvd(stb)(VDD2).
[6] RXD is LOW during thermal shutdown.
ILleakage current VDD2 =0V or V
DD2 shorted to
GND via 47 k;
VCANH =V
CANL =5V;
3- +3A
Riinput resistance 9 15 28 k
Riinput resistance deviation between VCANH and VCANL 3- +3%
Ri(dif) differential input resistance 19 30 52 k
Ci(cm) common-mode input
capacitance
[3] --20pF
Ci(dif) differential input capacitance [3] --10pF
Temperature detection
Tj(sd) shutdown junction
temperature
[3]
[6] - 190 - C
Table 11. Static characteristics …continued
Tvj =
40
C to +125
C; VDD1 = 3.0 V to 5.25 V with respect to GND1; VDD2 = 4.75 V to 5.25 V with respect to GND2 unless
otherwise specified. Positive currents flow into the IC. All voltages and currents are referenced to GND2 unless otherwise
specified[1].
Symbol Parameter Conditions Min Typ Max Unit
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NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
11. Dynamic characteristics
[1] All parameters are guaranteed over the virtual junction temperature range by design. Factory testing uses correlated test conditions to
cover the specified temperature and power supply voltage range.
[2] See Figure 5.
[3] Referenced to GND1.
[4] VI is the input voltage on TXD. See Figure 7 for test setup.
[5] The start-up time is the time from the application of power to valid data at the output. Guaranteed by design.
Table 12. Dynamic characteristics
Tvj =
40
C to +125
C; VDD1 = 3.0 V to 5.25 V with respect to GND1; VDD2 = 4.75 V to 5.25 V with respect to GND2 unless
otherwise specified[1].
Symbol Parameter Conditions Min Typ Max Unit
Transceiver timing; pins CANH, CANL, TXD and RXD; see Figure 4
td(TXD-busdom) delay time from TXD to bus dominant Normal mode - 72 120 ns
td(TXD-busrec) delay time from TXD to bus recessive Normal mode - 97 120 ns
td(busdom-RXD) delay time from bus dominant to RXD Normal mode - 67 130 ns
td(busrec-RXD) delay time from bus recessive to RXD Normal mode - 72 130 ns
td(TXDL-RXDL) delay time from TXD LOW to RXD LOW Normal mode 72 - 220 ns
td(TXDH-RXDH) delay time from TXD HIGH to RXD HIGH Normal mode 72 - 220 ns
tbit(bus) transmitted recessive bit width tbit(TXD) = 500 ns [2] 435 - 530 ns
tbit(TXD) = 200 ns [2] 155 - 210 ns
tbit(RXD) bit time on pin RXD tbit(TXD) = 500 ns [2] 400 - 550 ns
tbit(TXD) = 200 ns [2] 120 - 220 ns
trec receiver timing symmetry tbit(TXD) = 500 ns 65 - +40 ns
tbit(TXD) = 200 ns 45 - +15 ns
tto(dom)TXD TXD dominant time-out time VTXD = 0 V; Normal mode [3] 0.3 1.7 5 ms
CMTI common-mode transient immunity VI=V
DD1 or VI=0 V [4] 20 45 - kV/s
tstartup start-up time [5] -- 500s
tfltr(wake)bus bus wake-up filter time Standby mode 0.5 1 3 s
LAW i
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Product data sheet Rev. 3 — 20 May 2016 14 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
Fig 4. CAN transceiver timing diagram
Fig 5. Loop delay symmetry timing diagram
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 15 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
12. Application information
Isolated CAN applications are becoming increasingly common in industrial automation
processes. The TJF1052i is the ideal solution in applications that require an isolated CAN
node. The device can also be used to isolate high-voltage on-demand pumps and motors
in belt elimination projects.
If the TJF1052i is used in a HS-CAN network that supports remote bus wake-up, the
power-down sequence of the supplies must be managed properly to avoid a dominant
pulse on the CAN bus. VDD2 should pass the minimum undervoltage threshold
(Vuvd(stb)(VDD2) (min)) before VDD1 falls below its maximum undervoltage detection
threshold (Vuvd(VDD1)(max)). Power-up sequencing can happen in any order.
Digital inputs and outputs are 3 V compliant, allowing the TJF1052i to interface directly
with 3 V and 5 V microcontrollers.
12.1 Application hints
Further information on the application of the TJF1052i can be found in NXP application
hints AH1301 Application Hints - TJA1052iGalvanicIsolatedHighSpeedCANTransceiver.
Fig 6. Typical application with TJF1052i and a 5 V microcontroller.
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 16 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
13. Test information
13.1 Test circuits
Fig 7. CMTI test setup
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 17 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
Fig 9. Life expectancy as a function of working voltage
Fig 10. Test circuit for measuring transceiver driver symmetry
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 18 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
14. Package outline
Fig 11. Package outline SOT162-1 (SO16)
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 19 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
15. Handling information
All input and output pins are protected against ElectroStatic Discharge (ESD) under
normal handling. When handling ensure that the appropriate precautions are taken as
described in JESD625-A or equivalent standards.
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
Through-hole components
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
Figure 12 Table 13 fl Figure 12
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Product data sheet Rev. 3 — 20 May 2016 20 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
Solder bath specifications, including temperature and impurities
16.4 Reflow soldering
Key characteristics in reflow soldering are:
Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 12) than a SnPb process, thus
reducing the process window
Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 13 and 14
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 12.
Table 13. SnPb eutectic process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350
< 2.5 235 220
2.5 220 220
Table 14. Lead-free process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350 to 2000 > 2000
< 1.6 260 260 260
1.6 to 2.5 260 250 245
> 2.5 250 245 245
mamum peak hamperature = MSL hymn damage \eve\ mmmum peak |emperature = mwmmum soldenng |emperamre
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Product data sheet Rev. 3 — 20 May 2016 21 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
MSL: Moisture Sensitivity Level
Fig 12. Temperature profiles for large and small components
001aac844
temperature
time
minimum peak temperature
= minimum soldering temperature
maximum peak temperature
= MSL limit, damage level
peak
temperature
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Product data sheet Rev. 3 — 20 May 2016 22 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
17. Appendix: ISO 11898-2:2016 parameter cross-reference list
Table 15. ISO 11898-2:2016 to NXP data sheet parameter conversion
ISO 11898-2:2016 NXP data sheet
Parameter Notation Symbol Parameter
HS-PMA dominant output characteristics
Single ended voltage on CAN_H VCAN_H VO(dom) dominant output voltage
Single ended voltage on CAN_L VCAN_L
Differential voltage on normal bus load VDiff VO(dif) differential output voltage
Differential voltage on effective resistance during arbitration
Optional: Differential voltage on extended bus load range
HS-PMA driver symmetry
Driver symmetry VSYM VTXsym transmitter voltage symmetry
Maximum HS-PMA driver output current
Absolute current on CAN_H ICAN_H IO(sc)dom dominant short-circuit output
current
Absolute current on CAN_L ICAN_L
HS-PMA recessive output characteristics, bus biasing active/inactive
Single ended output voltage on CAN_H VCAN_H VO(rec) recessive output voltage
Single ended output voltage on CAN_L VCAN_L
Differential output voltage VDiff VO(dif) differential output voltage
Optional HS-PMA transmit dominant timeout
Transmit dominant timeout, long tdom tto(dom)TXD TXD dominant time-out time
Transmit dominant timeout, short
HS-PMA static receiver input characteristics, bus biasing active/inactive
Recessive state differential input voltage range
Dominant state differential input voltage range
VDiff Vth(RX)dif differential receiver threshold
voltage
Vrec(RX) receiver recessive voltage
Vdom(RX) receiver dominant voltage
HS-PMA receiver input resistance (matching)
Differential internal resistance RDiff Ri(dif) differential input resistance
Single ended internal resistance RCAN_H
RCAN_L
Riinput resistance
Matching of internal resistance MR Riinput resistance deviation
HS-PMA implementation loop delay requirement
Loop delay tLoop td(TXDH-RXDH) delay time from TXD HIGH to
RXD HIGH
td(TXDL-RXDL) delay time from TXD LOW to RXD
LOW
Optional HS-PMA implementation data signal timing requirements for use with bit rates above 1 Mbit/s up to
2 Mbit/s and above 2 Mbit/s up to 5 Mbit/s
Transmitted recessive bit width @ 2 Mbit/s / @ 5 Mbit/s,
intended tBit(Bus) tbit(bus) transmitted recessive bit width
Received recessive bit width @ 2 Mbit/s / @ 5 Mbit/s tBit(RXD) tbit(RXD) bit time on pin RXD
Receiver timing symmetry @ 2 Mbit/s / @ 5 Mbit/s tRec trec receiver timing symmetry
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Product data sheet Rev. 3 — 20 May 2016 23 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
[1] tfltr(wake)bus - bus wake-up filter time, in devices with basic wake-up functionality
HS-PMA maximum ratings of VCAN_H, VCAN_L and VDiff
Maximum rating VDiff VDiff V(CANH-CANL) voltage between pin CANH and
pin CANL
General maximum rating VCAN_H and VCAN_L VCAN_H
VCAN_L
Vxvoltage on pin x
Optional: Extended maximum rating VCAN_H and VCAN_L
HS-PMA maximum leakage currents on CAN_H and CAN_L, unpowered
Leakage current on CAN_H, CAN_L ICAN_H
ICAN_L
ILleakage current
HS-PMA bus biasing control timings
CAN activity filter time, long tFilter twake(busdom)[1] bus dominant wake-up time
CAN activity filter time, short twake(busrec)[1] bus recessive wake-up time
Wake-up timeout, short tWake tto(wake)bus bus wake-up time-out time
Wake-up timeout, long
Timeout for bus inactivity tSilence tto(silence) bus silence time-out time
Bus Bias reaction time tBias td(busact-bias) delay time from bus active to bias
Table 15. ISO 11898-2:2016 to NXP data sheet parameter conversion
ISO 11898-2:2016 NXP data sheet
Parameter Notation Symbol Parameter
Figure 1 Figure 4 Figure 6 Figure 8 Section 7.1.2 Section 7.2.2 Table 9 Table 11 Table note 2 Table 12 m Section 2.1 Table 9 Table 11 Table 12 Figure 5 ed; Figure 10 Section 17 m Table note 3
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Product data sheet Rev. 3 — 20 May 2016 24 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
18. Revision history
Table 16. Revision history
Document ID Release date Data sheet status Change notice Supersedes
TJF1052i v.3 20160520 Product data sheet - TJF1052i v.3
Modifications: Some minor typos and formatting errors corrected
Figure 1, Figure 4, Figure 6, Figure 8 amended
Section 7.1.2, Section 7.2.2 revised
Table 9: supply pin voltages combined in parameter Vx; Table note 1 added; parameter Vtrt revised
Table 11: measurement added/values and conditions changed for parameter IDD2; reference to
Table note 2 added in measurement conditions of IO(sc)dom; Table note 3 amended
Table 12: added parameter tfltr(wake)bus
ISO 11898-2:2016 compliance:
Section 1: text amended (2nd last paragraph)
Section 2.1: text amended (3rd feature)
Table 9: parameter V(CANH-CANL) added
Table 11:
- measurement conditions changed for parameters VO(dom), VO(dif), IL, IO(sc)dom, Vhys(RX)dif and
Vth(RX)dif (associated table note removed)
- added parameters VTXsym (and associated table note), Vrec(RX) and Vdom(RX)
- symbol VO(dif)bus renamed as VO(dif)
- additional measurements included for parameter VO(dif)
Table 12:
- added parameters tbit(bus) and trec
- parameter tPD(TXD-RXD) replaced with parameters td(TXDL-RXDL) and td(TXDH-RXDH)
- additional measurement included for parameter tbit(RXD)
Figure 5 amended; Figure 10 added
Section 17 added
TJF1052i v.2 20150115 Product data sheet - TJF1052i v.1
TJF1052i v.1 201300710 Product data sheet - -
TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 25 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
19. Legal information
19.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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TJF1052I All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 3 — 20 May 2016 26 of 27
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors TJF1052i
Galvanically isolated high-speed CAN transceiver
© NXP Semiconductors N.V. 2016. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 May 2016
Document identifier: TJF1052I
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
21. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
2.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.2 Power management . . . . . . . . . . . . . . . . . . . . . 2
2.3 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Functional description . . . . . . . . . . . . . . . . . . . 5
7.1 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.1 Normal mode . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 Standby mode. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2 Fail-safe features . . . . . . . . . . . . . . . . . . . . . . . 6
7.2.1 TXD dominant time-out function . . . . . . . . . . . . 6
7.2.2 Undervoltage protection: VDD2 . . . . . . . . . . . . . 6
7.2.3 Undervoltage protection: VDD1 . . . . . . . . . . . . . 6
7.2.4 Overtemperature protection . . . . . . . . . . . . . . . 7
7.3 Insulation characteristics and safety-related
specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Thermal characteristics . . . . . . . . . . . . . . . . . 10
10 Static characteristics. . . . . . . . . . . . . . . . . . . . 10
11 Dynamic characteristics . . . . . . . . . . . . . . . . . 13
12 Application information. . . . . . . . . . . . . . . . . . 15
12.1 Application hints . . . . . . . . . . . . . . . . . . . . . . . 15
13 Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
13.1 Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18
15 Handling information. . . . . . . . . . . . . . . . . . . . 19
16 Soldering of SMD packages . . . . . . . . . . . . . . 19
16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 19
16.2 Wave and reflow soldering . . . . . . . . . . . . . . . 19
16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 19
16.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 20
17 Appendix: ISO 11898-2:2016 parameter
cross-reference list . . . . . . . . . . . . . . . . . . . . . 22
18 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 24
19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
19.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
19.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 25
19.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 26
20 Contact information . . . . . . . . . . . . . . . . . . . . 26
21 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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