IXF(K,X)120N65X2 Datasheet by IXYS

© 2016 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 120 A
IDM TC= 25C, Pulse Width Limited by TJM 240 A
IATC= 25C15A
EAS TC= 25C 3.5 J
PDTC= 25C 1250 W
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 650 V
VGS(th) VDS = VGS, ID = 8mA 3.5 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 125C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 24 m
IXFK120N65X2
IXFX120N65X2
VDSS = 650V
ID25 = 120A
RDS(on)
24m
DS100685C(12/16)
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
X2-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
GDS
TO-264 (IXFK)
S
G
DTab
INCI—ES MILLI R 5104 MIN MAX MIN MAX A .105 209 4.70 5.50 M 107 HR 7 50 3 (In 5 035 009 0 90 I 25 51 091 105 2.50 2.70 b2 “0 ‘25 2 EU 3 2D c 020 055 0.50 0.05 D 1012 1015 2570 25 30 E .775 709 19 70 20.53 6 215050 5 45 1331: L .750 007 10.50 20 53 L1 091 105 2 50 z 70 N" ‘22 ‘38 3 ID 3 5:) o .225 244 5 so 5 20 01 .345 .552 a 80 9.29 w 150 155 5 00 4 20 001 071 007 I 00 2 20 s 225 .244 5 50 5 20 LY ‘1 J I l 'I I. .IU INCHES WILLIMETERS 5”" MIN MAX MIN MAX A .190 .205 4.03 5.21 AI .090 .100 2.29 2.54 A2 .075 £85 131 2.15 5 045 055 1.14 1.40 52 .075 .fl87 1,91 2.20 M .115 .125 2.92 3.20 c .024 031 0.00 D .019 .040 21.34 DI .550 .590 1551 17.53 02 .035 .050 0.09 1.27 E .520 .535 15.75 15.13 21 .520 .550 13.00 1422 e 215 0:0 5 45 0:: L .780 .810 19.51 20.57 LI .150 .17: 3.51 4.32 0 220 244 559 e 20 R .170 .190 4.32 4.03
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N65X2
IXFX120N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 120 A
ISM Repetitive, Pulse Width Limited by TJM 480 A
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 220 ns
QRM 2.3 μC
IRM 21.0 A
IF = 60A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 46 76 S
RGi Gate Input Resistance 0.74
Ciss 14 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 8700 pF
Crss 5.5 pF
Co(er) 455 pF
Co(tr) 1930 pF
td(on) 39 ns
tr 26 ns
td(off) 82 ns
tf 12 ns
Qg(on) 240 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 87 nC
Qgd 65 nC
RthJC 0.10C/W
RthCS 0.15C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1(External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2,4 - Drain
3 - Source
PLUS 247TM Outline
TO-264 Outline
Terminals: 1 = Gate
2,4 = Drain
3 = Source
b
Q
D
R
EA
S
R1
x2 b2
b1 A1
L1
31 2
L
c
e
40P
e
Q1
1 2 3 4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS 2 PLCS
b4
BACK SIDE
ANmmahzed RDskm 25 22 ‘3 m ‘u us uz ran __// a 40 an ma 150 200 ‘A, Ampere: © 2016 IXVS CORPOHA‘HON‘ AH ngms Reserved
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK120N65X2
IXFX120N65X2
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
7V
5V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
280
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
7V
5V
8V
9V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
120
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
6V
4V
7V
8V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 40 80 120 160 200 240 280
I
A
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK120N65X2
IXFX120N65X2
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 60A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 7. Maximum Drain Current vs. Case Temperature
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 8. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 9. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Flg. 15. Mnxlmum Tmnslenl Therm a: m anm- K/W um nnm unuum uuum Bum um Fu‘se wmh -Seconns ©2016|XVS CORPORATION, All Rights Reserved
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK120N65X2
IXFX120N65X2
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
100µs
R
DS(
on
)
Limit
1ms
10ms
Fig. 13. Output Capacitance Stored Energy
0
10
20
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
IXYS REF: F_120N65X2(X9-S602) 12-14-15
IXYS A Lillelluse Tecnnumgy
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