BLC9G20LS-120V Datasheet by Ampleon USA Inc.

View All Related Products | Download PDF Datasheet
I ANVIPLEON
1. Product profile
1.1 General description
120 W LDMOS power transistor with enhanced video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
Designed for broadband operation (1805 MHz to 1995 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
1805 MHz to 1995 MHz frequency range
BLC9G20LS-120V
Power LDMOS transistor
Rev. 5 — 24 May 2017 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) GpDACPR5M
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 1805 to 1880 700 28 30 19.2 31 33 [1]
AIWIPLEON e A? ass-17115345
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 2 of 15
BLC9G20LS-120V
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain1
2drain2
3gate1
4gate2
5 video decoupling
6 video decoupling
7source [1]
51 26
7
34
aaa-016345
1, 2, 5, 6
7
3, 4
Table 3. Ordering information
Type number Package
Name Description Version
BLC9G20LS-120V - air cavity plastic earless flanged package; 6 leads SOT1275-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 6+13V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 30 W 0.47 K/W
AfWIPLEON
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 3 of 15
BLC9G20LS-120V
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLC9G20LS-120V is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28 V;
IDq =700mA; P
L= 100 W (CW); f = 1805 MHz.
Table 6. DC characteristics
Tj = 25
C per section, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=1.2mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 120 mA 1.5 1.9 3.1 V
VGSq gate-source quiescent voltage VDS = 28 V; ID=700mA - 2.2 - V
IDSS drain leakage current VGS =0V; V
DS =32V - - 2.8 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
-25-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D=6A - 4.3 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=4.2A
-0.12-
Table 7. RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f1= 1807.5 MHz; f2= 1812.5 MHz; f3= 1872.5 MHz; f4= 1877.5 MHz;
RF performance at VDS =28V; I
Dq =700mA; T
case =25
C; unless otherwise specified; in a water
cooled class-AB test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 30 W 17.8 19.2 - dB
Ddrain efficiency PL(AV) =30W 29 31 - %
RLin input return loss PL(AV) =30W - 13 9dB
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) =30W - 33 28 dBc
AfWIPLEON 4F wmmss
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 4 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 8. Typical impedance
Measured load-pull data of the device; IDq = 700 mA; VDS = 28 V; pulsed CW (tp= 100
s;
=10%).
f ZS [1] ZL [1] PL [2] D [2] Gp [2]
(MHz) () ()(W) (%) (dB)
Maximum power load
1805 1.6 j5.4 1.6 j4.2 169.6 59.4 16.3
1840 2.4 j6.0 1.5 j4.0 170.3 59.0 16.2
1880 2.7 j6.2 1.6 j4.1 168.0 59.6 16.5
1930 3.7 j7.6 1.4 j3.9 167.9 58.3 16.3
1960 3.8 j8.0 1.5 j4.2 166.8 57.3 16.5
1990 5.0 j7.9 1.4 j4.1 162.1 57.2 16.6
Maximum drain efficiency load
1805 1.6 j5.4 2.9 j2.6 117.0 70.1 18.6
1840 2.4 j6.0 2.8 j2.6 116.5 69.9 18.7
1880 2.7 j6.2 2.5 j2.4 110.7 69.8 19.0
1930 3.7 j7.6 2.5 j2.7 115.4 68.2 19.0
1960 3.8 j8.0 2.0 j2.6 113.6 67.5 19.0
1990 5.0 j7.9 2.0 j2.7 113.6 66.7 19.1
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
AfWIPLEON
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 5 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLC9G20LS-120V shows 75 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 1805 MHz to 1880 MHz
band at VDS = 28 V and IDq = 700 mA.
VDS =28V; I
Dq = 700 mA.
(1) low
(2) high
Fig 2. VBW capability in class-AB test circuit
aaa-017684
1 10 102
-80
-60
-40
-20
0
caring spacing (MHz)
IMD
IMDIMD
(dBc)
(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(1)(1)(1)
(2)(2)(2)
(1)(1)(1)
(2)(2)(2)
IMD3IMD3IMD3
IMD5
IMD5IMD5
IMD7
IMD7IMD7
AIWIPLEON
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 6 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.4 Test circuit
[1] American Technical Ceramics type 600F or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] Murata or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers RO4350B with a thickness of 0.76 mm.
See Table 9 for a list of components.
Fig 3. Component layout for test circuit
Table 9. List of components
See Figure 3 for component layout.
Component Description Value Remarks
C1, C7 multilayer ceramic chip capacitor 43 pF [1] ATC 600F
C2 multilayer ceramic chip capacitor 3.9 pF [2] ATC 100A
C3, C4, C5, C9 multilayer ceramic chip capacitor 1.0 F, 50 V [3] Murata
C6 multilayer ceramic chip capacitor 1.5 pF [1] ATC 600F
C8 multilayer ceramic chip capacitor 220 nF, 50 V [3] Murata
C10 electrolytic capacitor > 470 F, 50 V
R1 resistor 2.2 , 1 % tolerance SMD 1206
aaa-017792
C2
C3 C4
C6
C5
C10
C7 C8 C9
C1
R1
50 mm
60 mm
50 mm
AfWIPLEON Ens-017695 Ens-017695 \\ \\ / \\\
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 7 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.5 Graphical data
7.5.1 Pulsed CW
VDS =28V; I
Dq = 700 mA; tp= 100 s; =10%.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
VDS =28V; I
Dq = 700 mA; tp= 100 s; =10%.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
Fig 4. Power gain as a function of output power;
typical values
Fig 5. Drain efficiency as a function of output power;
typical values
aaa-017685
0 20 40 60 80 100 120 140 160
14
16
18
20
22
PL (W)
Gp
Gp
(dB)(dB)(dB)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-017686
0 20 40 60 80 100 120 140 160
0
20
40
60
80
PL (W)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
AfWIPLEON Ens-017697 Ens-017695 / /,/ Ens-017699 Ens-017690 / //
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 8 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.5.2 1-Carrier W-CDMA
VDS =28V; I
Dq = 700 mA.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
VDS =28V; I
Dq = 700 mA.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
Fig 6. Power gain as a function of output power;
typical values
Fig 7. Drain efficiency as a function of output power;
typical values
VDS =28V; I
Dq = 700 mA.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
VDS =28V; I
Dq = 700 mA.
(1) f = 1807.5 MHz
(2) f = 1840.0 MHz
(3) f = 1872.5 MHz
Fig 8. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 9. Peak-to-average ratio as a function of output
power; typical values
aaa-017687
0 10 20 30 40 50 60 70
17
18
19
20
21
PL (W)
Gp
Gp
(dB)(dB)(dB)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-017688
0 10 20 30 40 50 60 70
0
10
20
30
40
50
60
PL (W)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-017689
0 10 20 30 40 50 60 70
-60
-50
-40
-30
-20
PL (W)
ACPR
ACPR5M5M
ACPR5M
(dBc)(dBc)(dBc)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-017690
0 10 20 30 40 50 60 70
4
5
6
7
8
PL (W)
PAR
PARPAR
(dB)
(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
AfWIPLEON / 5537017691 5537017692 JA\ / 4,—\ 5537017693 5537017694
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 9 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.5.3 2-Carrier W-CDMA
VDS =28V; I
Dq = 700 mA; 5 MHz carrier spacing.
(1) f = 1810 MHz
(2) f = 1875 MHz
VDS =28V; I
Dq = 700 mA; 5 MHz carrier spacing.
(1) f = 1810 MHz
(2) f = 1875 MHz
Fig 10. Power gain as a function of output power;
typical values
Fig 11. Drain efficiency as a function of output power;
typical values
VDS =28V; I
Dq = 700 mA; 5 MHz carrier spacing.
(1) f = 1810 MHz
(2) f = 1875 MHz
VDS =28V; I
Dq = 700 mA; 5 MHz carrier spacing.
(1) f = 1810 MHz
(2) f = 1875 MHz
Fig 12. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 13. Input return loss as a function of output
power; typical values
aaa-017691
0 10 20 30 40 50 60 70
17
17.5
18
18.5
19
19.5
20
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
aaa-017692
0 10 20 30 40 50 60 70
0
10
20
30
40
50
60
PL (W)
ηD
ηD
(%)(%)(%)
(2)(2)(2)
(1)(1)(1)
aaa-017693
0 10 20 30 40 50 60 70
-60
-50
-40
-30
-20
PL (W)
ACPR
ACPR5M5M
ACPR5M
(dBc)(dBc)(dBc)
(2)(2)(2)
(1)(1)(1)
aaa-017694
0 10 20 30 40 50 60 70
8
10
12
14
16
18
PL (W)
RL
RLinin
RLin
(dB)(dB)(dB) (1)(1)(1)
(2)
(2)(2)
AfWIPLEON E© M
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 10 of 15
BLC9G20LS-120V
Power LDMOS transistor
8. Package outline
Fig 14. Package outline SOT1275-1
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1275-1
sot1275-1_po
16-11-15
17-04-13
Unit
mm
max
nom
min
4.01 3.94 0.178 20.42 20.37 9.80
8.89
9.91
A
Dimensions
Air cavity plastic earless flanged package; 6 leads SOT1275-1
bb
1
1.14
cDD
1EE
1eFHH
1LQ
(1)
1.68
U1
20.70
U2
0.94 12.609.55 19.33 25.203.40 3.68 0.127 20.12 20.17 9.50 9.700.89 1.45 20.50
65°
Z
3.17
Z1
5.79
Į
Į
61°2.67 5.29
1.14 12.809.75 19.53 25.40
0.50.50.1
w2
vy
0.5
w1
0 10 mm5
scale
B
A
e
51 2 6
7
34
D
H1
bQ
U2
b1
U1
L
D1
F
Z1
Z
EE1
H
A
c
w1B
w2B
v A
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
y
AMIIPLEON Am
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 11 of 15
BLC9G20LS-120V
Power LDMOS transistor
9. Handling information
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. ESD sensitivity
ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2]
Table 11. Abbreviations
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
MTF Median Time to Failure
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VBW Videoband Width
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
AfWIPLEON 0 Table 2 on gage 2 Table 3 on page 2 Figure 14 on gage 10
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 12 of 15
BLC9G20LS-120V
Power LDMOS transistor
11. Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLC9G20LS-120V v.5 20170524 Product data sheet - BLC9G20LS-120V v.4
Modifications: Table 2 on page 2: change simplified outline
Table 3 on page 2: change version to SOT1275-1
Figure 14 on page 10: change package outline drawing to SOT1275-1
BLC9G20LS-120V v.4 20161202 Product data sheet - BLC9G20LS-120V v.3
BLC9G20LS-120V v.3 20151005 Product data sheet - BLC9G20LS-120V v.2
BLC9G20LS-120V v.2 20150901 Objective data sheet - BLC9G20LS-120V v.1
BLC9G20LS-120V v.1 20150703 Objective data sheet - -
AMIIPLEON
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 13 of 15
BLC9G20LS-120V
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
AfWIPLEON hflg:llwww.am9leon.com hug:Ilwww.amgleon.com/sales
BLC9G20LS-120V All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 5 — 24 May 2017 14 of 15
BLC9G20LS-120V
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
AfWIPLEON
BLC9G20LS-120V
Power LDMOS transistor
© Ampleon Netherlands B.V. 2017. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 24 May 2017
Document identifier: BLC9G20LS-120V
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 VBW in a class-AB operation . . . . . . . . . . . . . . 5
7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.5.1 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.5.2 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
7.5.3 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Handling information. . . . . . . . . . . . . . . . . . . . 11
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Products related to this Datasheet

RF FET LDMOS 65V 19.2DB SOT12753
Available Quantity: 100
Unit Price: 78.8125
RF FET LDMOS 65V 19.2DB SOT12753
Available Quantity: 52
Unit Price: 86.7
RF FET LDMOS 65V 19.2DB SOT12753
Available Quantity: 104
Unit Price: 86.7
RF FET LDMOS 65V 19.2DB SOT12753
Available Quantity: 104
Unit Price: 86.7