VS-MBRS(190, 1100)-M3 Datasheet by Vishay General Semiconductor - Diodes Division

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VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-2019 1Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS190-M3, VS-MBRS1100-M3 surface-mount
Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VR90 V, 100 V
VF at IF0.78 V
IRM 1 mA at 125 °C
TJ max. 175 °C
EAS 1.0 mJ
Package SMB (DO-214AA)
Circuit configuration Single
Cathode Anode
SMB (DO-214AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 90, 100 V
IFSM tp = 5 μs sine 870 A
VF1.0 Apk, TJ = 125 °C 0.63 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS190-M3 VS-MBRS1100-M3 UNITS
Maximum DC reverse voltage VR90 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 147 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
870
10 ms sine or 6 ms rect. pulse 50
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
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VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-2019 2Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1) 1 A TJ = 25 °C 0.78 V
TJ = 125 °C 0.62
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 125 °C 1.0
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 42 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -55 to +175 °C
Maximum thermal resistance,
junction to lead RthJL (2) DC operation
See fig. 4 36
°C/W
Maximum thermal resistance,
junction to ambient RthJA DC operation 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (DO-214AA) 19/10
dPtot
dTJ
------------- 1
RthJA
--------------<
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VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-2019 3Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 2 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.00001
0.0001
0.001
1
10
0.1
0.01
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
20 40 80 100
60
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
1
10
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.4 0.6 0.8 1.0
0.2
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
4020 60 80 100
0
TJ = 25 °C
0.1
1
100
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-2019 4Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
110
120
130
140
150
160
170
180
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0.80.4 1.2 1.6
0
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.2
0.6
0.8
0.4
1.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0.3 1.50.6 0.9 1.2
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
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VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-2019 5Document Number: 95744
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBRS190-M3/5BT 5BT 3200 13" diameter plastic tape and reel
VS-MBRS1100-M3/5BT 5BT 3200 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95401
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
SPICE model www.vishay.com/doc?95516
SPICE model www.vishay.com/doc?96602
90 = 90 V
100 = 100 V
2-Schottky MBR series
3-S = SMB (DO-214AA)
4- Current rating (1 = 1 A)
5- Voltage rating
6- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
Device code
51 32 4 6
VS- MBR S 1 100 -M3
1-Vishay Semiconductors product
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Document Number: 95401 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SMB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
Cathode band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 (5.59) REF.
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Revision: 01-Jan-2021 1Document Number: 91000
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