STW34NM60N Datasheet by STMicroelectronics

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This is information on a product in full production.
March 2015 DocID027675 Rev 2 1/12
12
STW34NM60N
N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh™ II
Power MOSFETs in a TO-247 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Order code V
DSS
R
DS(on)
I
D
P
TOT
STW34NM60N 600 V 0.105 31.5 A 250 W
Table 1. Device summary
Order codes Marking Packages Packaging
STW34NM60N 34NM60N TO-247 Tube
www.st.com
Contents STW34NM60N
2/12 DocID027675 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
é]
DocID027675 Rev 2 3/12
STW34NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 600 V
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 31.5 A
I
D
Drain current (continuous) at T
C
= 100 °C 20 A
I
DM (1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 126 A
P
TOT
Total dissipation at T
C
= 25 °C 250 W
I
AR
Max current during repetitive or single
pulse avalanche
(pulse width limited by T
jmax
) 7A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V) 345 mJ
dv/dt
(2)
2. I
SD
31.5 A, di/dt 400 As, V
DS
peak V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
3. V
DS
480 V
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature -55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.5 °C/W
R
thj-amb
Thermal resistance junction-amb max 50
Electrical characteristics STW34NM60N
4/12 DocID027675 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0) I
D
= 1 mA 600 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 600 V
V
DS
= 600 V, Tc=125 °C
1
100
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ± 25 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on-
resistance V
GS
= 10 V, I
D
= 14.5 A 0.092 0.105 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
- 2722 - pF
C
oss
Output capacitance - 173 - pF
C
rss
Reverse transfer
capacitance -1.75- pF
C
oss eq.(1)
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related V
GS
= 0, V
DS
= 0 to 480 V - 458 - pF
t
d(on)
Turn-on delay time
V
DD
= 300 V, I
D
= 15.75 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 19 and 14)
-18-ns
t
r
Rise time - 36 - ns
t
d(off)
Turn-off delay time - 104 - ns
t
f
Fall time - 73 - ns
Q
g
Total gate charge V
DD
= 480 V, I
D
= 31.5 A
V
GS
=10 V
(see Figure 15)
-84-nC
Q
gs
Gate-source charge - 14 - nC
Q
gd
Gate-drain charge - 45 - nC
R
G
Intrinsic gate resistance
f = 1 MHz, gate DC Bias=0
test signal level=20 mV
open drain
-2.9- Ω
é]
DocID027675 Rev 2 5/12
STW34NM60N Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 31.5 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 126 A
V
SD(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage I
SD
= 31.5 A, V
GS
=0 - 1.6 V
t
rr
Reverse recovery time I
SD
= 31.5 A, V
DD
= 60 V
di/dt = 100 A/µs,
(see Figure 16)
- 412 ns
Q
rr
Reverse recovery charge - 8 µC
I
RRM
Reverse recovery current - 39 A
t
rr
Reverse recovery time I
SD
= 31.5 A,V
DD
= 60 V
di/dt=100 A/µs,
T
j
=150 °C
(see Figure 16)
- 490 ns
Q
rr
Reverse recovery charge - 10 µC
I
RRM
Reverse recovery current - 43 A
ommn lo" ‘04 swcLE FLILSE 10’5 to" 10'3 ‘0'2 10".,(5)
Electrical characteristics STW34NM60N
6/12 DocID027675 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
100
10
1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
AM15707v1
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
I
D
60
40
20
0
010 V
DS
(V)
20
(A)
515 25
80
5V
6V
V
GS
=10V
30
70
50
30
10
AM09020v1
I
D
60
40
20
0
04V
GS
(V)
8
(A)
26
80
10
30
50
70
V
DS
=20V
AM09021v1
VGS
6
4
2
0
020 Qg(nC)
(V)
80
8
40 60
10
VDD=480V
ID=31.5A
300
200
100
0
400
VDS (V)
500
VDS
12
AM15701v1
R
DS(on)
0.092
0.09
0.088
0.086
020 I
D
(A)
(Ω)
10
0.094
0.096
V
GS
=10V
515 25 30
AM15702v1
é]
DocID027675 Rev 2 7/12
STW34NM60N Electrical characteristics
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature Figure 11. Normalized on-resistance vs
temperature
Figure 12. Normalized B
VDSS
vs temperature Figure 13. Source-drain diode forward
characteristics
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1
10000
100
Ciss
Coss
Crss
AM09024v1
E
oss
1
2
0
0100 V
DS
(V)
(µJ)
400
200 300 500
AM09025v1
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
I
D
=250µA
0.60
AM09026v1
R
DS(on)
1.3
1.1
0.7
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
1.5
1.7
1.9
I
D
=14.5A
0.9
2.1
AM15703v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
I
D
=1mA
AM15704v1
V
SD
010 I
SD
(A)
(V)
525
15 20
0.2
0.4
0.6
0.8
TJ=-50°C
TJ=150°C
TJ=25°C
1
1.2
1.4
30
0
AM15705v1
aw
Test circuits STW34NM60N
8/12 DocID027675 Rev 2
3 Test circuits
Figure 14. Switching times test circuit for
resistive load Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
WE Rmfllflfl
DocID027675 Rev 2 9/12
STW34NM60N Package information
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 TO-247 package information
Figure 20. TO-247 drawing
0075325_H
Package information STW34NM60N
10/12 DocID027675 Rev 2
Table 7. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
P 3.55 3.65
R 4.50 5.50
S 5.30 5.50 5.70
é]
DocID027675 Rev 2 11/12
STW34NM60N Revision history
5 Revision history
Table 8. Document revision history
Date Revision Changes
25-Mar-2015 1 Initial release.
30-Mar-2015 2 Updated Figure 2: Safe operating area and Figure 3: Thermal
impedance.
STW34NM60N
12/12 DocID027675 Rev 2
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