TF412S Datasheet by onsemi

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42114HK TC-00003110/22512HK GB No.A2300-1/4
Semiconductor Components Industries, LLC, 2014
April, 2014
http://onsemi.com
TF412S
Features
Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)
Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)
Ultrasmall package facilitates miniaturization in end products
Halogen free compliance
Applications
Low-Frequency general-purpose amplifier,
impedance conversion, infrared sensor applications
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Value Unit
Drain-to-Source Voltage VDSX 30 V
Gate-to-Drain Voltage VGDS
30 V
Gate Current IG 10 mA
Drain Current ID 10 mA
Power Dissipation PD 100 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg
55 to +150 C
This product is designed to “ESD immunity < 200V*”,
so please take care when handling.
* Machine Model
Device Package Shipping
TF412ST5G
Pb-free and
Halogen Free
SOT-883 8,000
pcs. / reel
Electrical Characteristics at Ta 25C
Parameter Symbol Conditions Value Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDS IG =
10μA, VDS=0V
30 V
Gate-to-Source Leakage Current IGSS VGS =
20V, VDS=0V 1.0 nA
Cutoff Voltage VGS(off) VDS = 10V, ID = 1μA
0.18 0.80 1.5 V
Drain Current IDSS V
DS = 10V, VGS = 0V 1.2 3.0 mA
Forward Transfer Admittance | yfs | VDS = 10V, VGS=0V, f = 1kHz 3.0 5.0 mS
Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz 4 pF
Reverse Transfer Capacitance Crss 1.1 pF
N-Channel JFET
30V, 1.2 to 3.0mA, 5.0mS, SOT-883
Orderin
g
numbe
r
: ENA2300A
Electrical Connection
1 : Sourc
e
2 : Drain
3 : Gate
Top view
1
2
3
Marking
A2 M
M
= Date Cod
e
SOT-883
31
2
Ordering & Package Information
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
\ GS IDSS
TF412S
No.A2300-2/4
ID -- VDS ID -- VDS
Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
Drain Current, ID -- mA
ID -- VGS ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
IT16770
012345
0
1.0
0.5
1.5
2.0
2.5
3.0
VGS=0V
--0.2V
--0.3V
--0.4V
VGS=0V
--0.1V
--0.2V
IT16771
0 5 10 15 20 25 30
0
1.0
2.0
1.5
0.5
2.5
3.0
--0.1V
--0.3V
--0.4V
HD 131113 IT16773
--1.0 --0.8 --0.6 --0.4 --0.2 0
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0mA
IDSS=3.0mA
--1.0 --0.8 --0.6 --0.4 --0.2 0
0
2.5
2.0
1.5
0.5
1.0
3.0
3.5
--25°C
VDS=10V
25°C
Ta=75
°
C
VDS=10V
Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
Ciss -- VDS
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
23 57 2
0.1 1.0 357 2
10 357
100
1.0
0.1
5
7
2
2
3
10
5
7
3
IT16777
VGS=0V
f=1MHz
IT16776
23 57 2
0.1 1.0 357 2
10 357
100
10
1.0
5
7
2
3
VGS=0V
f=1MHz
|
y
fs | -- IDSS
Drain Current, IDSS -- mA
Forward Transfer Admittance, |
y
fs | -- mS
VGS(off) -- IDSS
Drain Current, IDSS -- mA
Cutoff Voltage, VGS(off) -- V
HD131113
0 3.51.51.00.5 2.0 2.5 3.0
--0.4
--0.2
--1.2
0
--1.4
--0.8
--0.6
--1.0
VDS=10V
ID=1.0μA
HD131113
0.5 1.0 1.5 2.0 3.00 2.5 3.5
7
0
5
6
2
1
3
4
VDS=10V
VGS=0V
f=1kHz
TF412S
No.A2300-3/4
HD131212
PD -- Ta
Allowable Power Dissipation, PD -- mW
Ambient Temperature, Ta -- °C
0
120
100
80
60
20
40
20 40 60 80 100 120 140 160
0
"J 37E I-I @ I-I EB EH mmcamn “G”, may arkmg. PbiFree p
TF412S
PS No.A2300-4/4
Package Dimensions
TF412ST5G
unit : mm
SOT-883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
E
D
BOTTOM VIEW
b
0.10 C
TOP VIEW
0.10 C
A
A1
0.10 C
0.10 C
C
SEATING
PLANE
SIDE VIEW
DIM MIN MAX
MILLIMETERS
A0.340 0.440
A1 0.000 0.030
b0.075 0.200
D2 0.620 BSC
e0.350 BSC
L0.170 0.300
SOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
1.10
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
XX = Specific Device Code
M = Date Code
XX M
L
0.43
RECOMMENDED
D0.950 1.075
E0.550 0.675
E2 0.425 0.550
A
M
0.10 BC
M
0.05 C
e
e/2
2X 3X
D2
E2
2X
0.41
0.55
0.20
EGAKCAPX2
OUTLINE
PIN ONE
REFERENCE
NOTE 3
3X
1
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