TT8M1 Datasheet by Rohm Semiconductor

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ROHm $Eulrrmllllrtnv Data Sheet O U ILW % ' 2 e H as; M» aw ram...“ smsn Mm O O . Package Taping m m a, a, Type Code TR “ ‘ Basic ordering unit (pieces 3000 ‘ mam o a: . ., 1 . l P? - >5 IAbsolule maximum ratings (Ta=25°C) fl ,3 _ " L . . (17 a} (I) 1‘) Parameter Symbol L'm'm Unit . Tr1 :Nrch . Dminrsoume voltage vDES 20 v Gatersource voltage vGSS :10 v Drain currem Continuous lD :25 A Pulsed lDP :10 A game on "em Continuous is 0.0 A (Body Diode) Pulsed l,D 10 A Power dissipation PD 1‘25 W / TOTAL 1 w I ELEMENT Channel temperature Tch 150 no Range ol storage temperature T519 755 to +150 ac so is; 10
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1.5V Drive Nch + Pch MOSFET
TT8M1
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package (TSST8).
3) Low voltage drive (1.5V drive).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 3000
TT8M1
Absolute maximum ratings (Ta = 25 C)
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage VDSS 20 20 V
Gate-source voltage VGSS 10 10 V
Continuous ID2.5 2.5 A
Pulsed IDP 10 10 A
Continuous Is0.8 0.8 A
Pulsed Isp 10 10 A
W / TOTAL
W / ELEMENT
Channel temperature Tch C
Range of storage temperature Tstg C
*1 Pw 10 s, Duty cycle 1%
*2 Mounted on a ceramic board.
Symbol
Type
Source current
(Body Diode)
Drain current
Parameter Unit
Limits
1
150
Power dissipation PD
1.25
55 to +150
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
*1
*2
*1
Abbreviated symbol :M01
TSST8
(1) (2) (3) (4)
(8) (7) (6) (5)
1/8 2010.08 - Rev.A
Parameter Symbol Min. Typ. Max. Unit Conditions Gatesource leakage lGSS . . :10 ”A VGS=110V, vus=ov Dralnrsource breakdown voltage v mm 20 . . v lD=1mA,VGS=OV Zero gate voltage drain current lDSS . . l ”A VDS— 0v. v55=ov Gate threshold voltage VGW, 0,3 . 1.0 v VDS=lov. ID=1mA . 52 72 lD=2.5A, sz:4.5v Static dralnrsource onrslate RD: my . 65 90 5A, VGS=2.5V resls‘anoe 85 120 2A, sz:l.av 100 140 5A, sz:l.5v Forward transler admittance l YE l 2,7 . . input capacitance 0,55 . 260 . Output capacitance cos. . 65 . Reverse transler capacitance cm . 35 . Tumron delay time tdiam . 9 . Rise time t, . l7 . Turmoil delay time tmy . za . Fall time t, . l7 . ns RG=10§2 Total gate charge 09 . 3.6 . nc l 5A, van-10v Gatesource charge Qgs . 0.7 . nc sz:4 5V,RL= 4st Galerdraln charge 09., . 0.6 . nc RG=10§2 'Pulsed lBody diode characteristics (SourcerDraln) (Ta : 2560) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage v5D . . 1.2 v is 2.5A, v55=ov 10
Data Sheet
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TT8M1
Electrical characteristics (Ta = 25 C)
<Tr1(Nch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=10V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --1AV
DS=20V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA
-5272 I
D=2.5A, VGS=4.5V
-6590 I
D=2.5A, VGS=2.5V
85 120 ID=1.2A, VGS=1.8V
100 140 ID=0.5A, VGS=1.5V
Forward transfer admittance l Yfs l 2.7 - - S VDS=10V, ID=2.5A
Input capacitance Ciss - 260 - pF VDS=10V
Output capacitance Coss -65-pFV
GS=0V
Reverse transfer capacitance Crss - 35 - pF f=1MHz
Turn-on delay time td(on) -9-nsI
D=1.2A, VDD 10V
Rise time tr-17-nsV
GS=4.5V
Turn-off delay time td(off) -28-nsR
L8.3
Fall time tf-17-nsR
G=10
Total gate charge Qg-3.6-nCI
D=2.5A, VDD 10V
Gate-source charge Qgs -0.7-nCV
GS=4.5V,RL 4
Gate-drain charge Qgd -0.6-nCR
G=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25 C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD --1.2VI
s=2.5A, VGS=0V
*Pulsed
Parameter Conditions
ConditionsParameter
Static drain-source on-state
resistance RDS (on) m
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/8 2010.08 - Rev.A
Parameter Symbol Min. Typ. Max. Unit Conditions Gatesource leakage lGSS , , :10 ”A VGS=110V, vus=ov Dralnrsource breakdown voltage v mm 720 , , v |D= 1mA.VGS=OV Zero gate voltage drain current lDSS , l ”A 20v, v55=ov Gate threshold voltage VGW, 41.3 , v 10v, |D=4mA , 49 Static dralnrsource onrslate , ea resistance R”: “’"l 100 150 , 140 250 Forward transler admittance l YE l 2,5 , , input capacitance 0,55 , 1270 , pF VDS=710V Output capacitance cass , 100 , pF ves:ov Reverse transler capacitance cm , 90 , pF t=lMHz Tumron delay time t«lam , 9 , ns 5— 1,2A.VDD!.71OV Rise time t, , 30 , ns vGS .5v Turmoil delay time tmy , 120 , ns R5830 Fall time t, , 85 , ns RG=10§2 Total gate charge 09 , 12 , nc l Z,5A.VDg-710V Gatesource charge Qgs , 2.5 , nc VGS=~4,5V,RL'= 45). Galerdraln charge 09., , 2 , nC RG=10§2 'Pulsed lBody diode characteristics (SourcerDraln) (Ta : 2560) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage v5D , , 71.2 v |§=72.5A, sz:ov 10
Data Sheet
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TT8M1
Electrical characteristics (Ta = 25 C)
<Tr2(Pch)>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=10V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 20 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - 1 AV
DS=20V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS=10V, ID=1mA
-4968 I
D=2.5A, VGS=4.5V
-6895 I
D=1.2A, VGS=2.5V
100 150 ID=1.2A, VGS=1.8V
- 140 280 ID=0.5A, VGS=1.5V
Forward transfer admittance l Yfs l 2.5 - - S VDS=10V, ID=2.5A
Input capacitance Ciss - 1270 - pF VDS=10V
Output capacitance Coss - 100 - pF VGS=0V
Reverse transfer capacitance Crss - 90 - pF f=1MHz
Turn-on delay time td(on) -9-nsI
D=1.2A, VDD 10V
Rise time tr-30-nsV
GS=4.5V
Turn-off delay time td(off) - 120 - ns RL8.3
Fall time tf-85-nsR
G=10
Total gate charge Qg-12-nCI
D=2.5A, VDD 10V
Gate-source charge Qgs -2.5-nCV
GS=4.5V,RL 4
Gate-drain charge Qgd -2-nCR
G=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25 C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD --1.2 V Is=2.5A, VGS=0V
*Pulsed
Parameter Conditions
Conditions
m
Static drain-source on-state
resistance RDS (on)
Parameter
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
3/8 2010.08 - Rev.A
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Data Sheet
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TT8M1
Electrical characteristic curves (Ta = 25C)
<Tr1(Nch)>
10
100
1000
0.01 0.1 1 10
VGS= 1.5V
Pulsed
0
1
2
3
4
5
00.20.40.60.81
VGS= 1.0V
Ta=25°C
Pulsed
VGS= 1.2V
VGS= 2.5V
VGS= 2.0V
VGS= 1.8V
VGS= 1.5V
0.001
0.01
0.1
1
10
00.511.52
VDS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
10
100
1000
0.01 0.1 1 10
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
Ta= 25°C
Pulsed
0
1
2
3
4
5
0246810
VGS= 1.0V
Ta=25°C
Pulsed
VGS= 1.5V
VGS= 4.5V
VGS= 2.5V
VGS= 1.8V
VGS= 1.2V
10
100
1000
0.01 0.1 1 10
VGS= 2.5V
Pulsed
10
100
1000
0.01 0.1 1 10
VGS= 4.5V
Pulsed
0.1
1
10
0.01 0.1 1 10
VDS= 10V
Pulsed
Ta=n25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.01 0.1 1 10
VGS= 1.8V
Pulsed
Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( )Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.9 Forward Transfer Admittance
vs. Drain Current
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( )
DRAIN-CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
VGS= 4.5V
4/8 2010.08 - Rev.A
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Data Sheet
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TT8M1
0
50
100
150
200
0510
Ta=25°C
Pulsed
ID= 1.25A
ID= 2.5A
0.01
0.1
1
10
0 0.5 1 1.5
VGS=0V
Pulsed
0
1
2
3
4
5
012345
Ta=25°C
VDD=10V
ID=2.5A
RG=10
Pulsed 10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
1
10
100
1000
0.01 0.1 1 10
tf
td(off)
Ta=25°C
VDD=10V
VGS=4.5V
RG=10
Pulsed
t
td(on)
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.12 Switching Characteristics
SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=n 25°C
5/8 2010.08 - Rev.A
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Data Sheet
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TT8M1
<Tr2(Pch)>
0
1
2
3
4
0246810
Ta=25°C
Pulsed
VGS= -1.2V
VGS= -1.1V
VGS= -1.3V
VGS= -1.4V
VGS= -10V
VGS= -1.5V
VGS= 1.8V
0
1
2
3
4
00.20.40.60.81
VGS= -1.3V
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
VGS= -1.1V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
0 0.5 1 1.5
VDS= -10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10
100
1000
0.1 1 10
Ta=25°C
Pulsed VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
10
100
1000
0.1 1 10
VGS= -2.5V
Pulsed Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.1 1 10
VGS= -4.5V
Pulsed Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0
1
10
100
0.1 1 10
VDS= -10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
0.1 1 10
VGS= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain
Fig.5 Static Drain-Source On-State
Resistance vs. Drain
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( )
Fig.9 Forward Transfer Admittance
vs. Drain Current
DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A]
10
100
1000
0.1 1 10
VGS= -1.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( )
DRAIN-CURRENT : -ID[A]
6/8 2010.08 - Rev.A
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Data Sheet
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TT8M1
0
50
100
150
200
250
300
0246810
Ta=25°C
Pulsed
ID= -2.5A
ID= -1.2A
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
5
02468101214
Ta=25°C
VDD= -10V
ID= -2.5A
RG=10
Pulsed
10
100
1000
10000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V 1
10
100
1000
10000
0.01 0.1 1 10
tr
tf
td(off)
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10
Pulsed
td(on)
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Dynamic Input Characteristics
Fig.13 Typical Capacitance
vs. Drain-Source
Fig.14 Switching Characteristics
SOURCE-DRAIN VOLTAGE : -VSD [V]
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : -VDS[V]
7/8 2010.08 - Rev.A
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Data Sheet
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TT8M1
Measurement circuits
<Tr1(Nch)>
<Tr2(Pch)>
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
Fig.2-2 Gate Charge Waveform
VG
VGS
Charge
Qg
Qgs Qgd
Fig.1-2 Switching waveforms
90%
90% 90%
10% 10%
50%
10%
50%
VGS
Pulse width
VDS
ton toff
tr
td(on) tf
td(off)
Fig.1-1 Switching time measurement circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
Fig.2-1 Gate charge measurement circuit
VGS
IG(Const.)
VDS
D.U.T.
ID
RL
VDD
Fig.3-1 Switching time measurement circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
Fig.3-2 Switching waveforms
90%
90% 90%
10% 10%
50%
10%
50%
VGS
Pulse width
VDS
ton toff
tr
td(on) tf
td(off)
Fig.4-2 Gate charge waveform
VG
VGS
Charge
Qg
Qgs Qgd
Fig.4-1 Gate charge measurement circuit
VGS
IG(Const.)
RG
VDS
D.U.T.
ID
RL
VDD
8/8 2010.08 - Rev.A
Notes The content specified herein is subiect td changefor improvement Without notice. The content specitied herein is im the purpose at introducing ROHM‘s products (hereinaiter “Products ‘>. I‘ you Wish to use any such Product, piease be suie tc reter to the specifications Great care was taken in ensuring the accuracy of the intarniaticn speciiied in this dccument The technicai ir‘formation specitied herein is intended cniyte show the typicai iuncticns at and The Products specitied in this document are intended to be used With generalruse eiectrdnic equipment or devices (such as audio visuai equipment office-automation equipment, commu- The Products specified in this document are not designed to be radiation tcierant against the possmility of physicai iniury, fire or any other damage caused in the event oi the ncy, tire cantrdi and faiirsale designs. ROHM it ynu intend to export di ship overseas any Prdduct cr techncidgy speciiied herein that may ROHI'II SEMICONDUU’DR
R1010A
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
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MRJSVQEXMSR63,1WLEPPFIEVRSVIWTSRWMFMPMX]JSVWYGLHEQEKI
I\EQTPIW SJ ETTPMGEXMSR GMVGYMXW JSV XLI 4VSHYGXW 63,1 HSIW RSX KVERX ]SY I\TPMGMXP] SV
MQTPMGMXP]ER]PMGIRWIXSYWISVI\IVGMWIMRXIPPIGXYEPTVSTIVX]SVSXLIVVMKLXWLIPHF]63,1ERH
SXLIVTEVXMIW63,1WLEPPFIEVRSVIWTSRWMFMPMX][LEXWSIZIVJSVER]HMWTYXIEVMWMRKJVSQXLI
YWISJWYGLXIGLRMGEPMRJSVQEXMSR
RMGEXMSRHIZMGIWIPIGXVSRMGETTPMERGIWERHEQYWIQIRXHIZMGIW
;LMPI 63,1 EP[E]W QEOIW IJJSVXW XS IRLERGI XLI UYEPMX] ERH VIPMEFMPMX]SJMXW4VSHYGXWE
4VSHYGXQE]JEMPSVQEPJYRGXMSRJSVEZEVMIX]SJVIEWSRW
4PIEWIFIWYVIXSMQTPIQIRXMR]SYVIUYMTQIRXYWMRKXLI4VSHYGXWWEJIX]QIEWYVIWXSKYEVH
JEMPYVISJER]4VSHYGXWYGLEWHIVEXMRKVIHYRHE
WLEPPFIEVRSVIWTSRWMFMPMX][LEXWSIZIVJSV]SYVYWISJER]4VSHYGXSYXWMHISJXLITVIWGVMFIH
WGSTISVRSXMREGGSVHERGI[MXLXLIMRWXVYGXMSRQERYEP
8LI4VSHYGXWEVIRSXHIWMKRIHSVQERYJEGXYVIHXSFIYWIH[MXLER]IUYMTQIRXHIZMGISV
W]WXIQ[LMGLVIUYMVIWERI\XVIQIP]LMKLPIZIPSJVIPMEFMPMX]XLIJEMPYVISVQEPJYRGXMSRSJ[LMGL
QE]VIWYPXMREHMVIGXXLVIEXXSLYQERPMJISVGVIEXIEVMWOSJLYQERMRNYV]WYGLEWEQIHMGEP
MRWXVYQIRXXVERWTSVXEXMSRIUYMTQIRXEIVSWTEGIQEGLMRIV]RYGPIEVVIEGXSVGSRXVSPPIVJYIP
GSRXVSPPIVSVSXLIVWEJIX]HIZMGI63,1WLEPPFIEVRSVIWTSRWMFMPMX]MRER][E]JSVYWISJER]
SJ XLI 4VSHYGXWJSVXLI EFSZI WTIGMEPTYVTSWIW-J E 4VSHYGXMWMRXIRHIHXSFIYWIHJSVER]
WYGLWTIGMEPTYVTSWITPIEWIGSRXEGXE63,1WEPIWVITVIWIRXEXMZIFIJSVITYVGLEWMRK
FIGSRXVSPPIHYRHIVXLI*SVIMKR)\GLERKIERHXLI*SVIMKR8VEHI0E[]SY[MPPFIVIUYMVIHXS
SFXEMREPMGIRWISVTIVQMXYRHIVXLI0E[

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