2N7000 Datasheet by Microchip Technology

| 1 ation Absolute Maximum Ratings YY=Yea WW=W _!
Supertex inc.
Supertex inc.
www.supertex.com
2N7000
Doc.# DSFP-2N7000
C062813
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Absolute Maximum Ratings
Parameter Value
Drain-to-Source voltage BVDSS
Drain-to-Gate voltage BVDGS
Gate-to-Source voltage ±30V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
TO-92
TO-92
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Si2N
7000
YYWW
Package may or may not include the following marks: Si or
Product Marking
Ordering Information
Part Number Package Option Packing
2N7000-G TO-92 1000/Bag
2N7000-G P002 TO-92 2000/Reel
2N7000-G P003 TO-92 2000/Reel
2N7000-G P005 TO-92 2000/Reel
2N7000-G P013 TO-92 2000/Reel
2N7000-G PO14 TO-92 2000/Reel
Product Summary
BVDSX/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
60V 5.0Ω75mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Characteristics
Package θja
TO-92 132OC/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
Electrical Characteristics
2
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-Source breakdown voltage 60 - - V VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage 0.8 - 3.0 V VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 10 nA VGS = ±15V, VDS = 0V
IDSS Zero Gate voltage drain current
- - 1.0 µA VGS = 0V, VDS = 48V
- - 1.0 mA VGS = 0V, VDS = 48V,
TA = 125OC
ID(ON) On-state drain current 75 - - mA VGS = 4.5V, VDS = 10V
RDS(ON)
Static Drain-to-Source
on-state resistance
- - 5.3 ΩVGS = 4.5V, ID = 75mA
- - 5.0 VGS = 10V, ID = 500mA
GFS Forward transconductance 100 - - mmho VDS = 10V, ID = 200mA
CISS Input capacitance - - 60
pF VGS = 0V, VDS = 25V,
f = 1.0MHz
COSS Common Source output capacitance - - 25
CRSS Reverse transfer capacitance - - 5
t(ON) Turn-on time - - 10 ns VDD = 15V, ID = 500mA,
RGEN = 25Ω
t(OFF) Turn-off time - - 10
VSD Diode forward voltage drop - 0.85 - V VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package ID
(continuous)
ID
(pulsed)
Power Dissipation
@TC = 25OCIDR
IDRM
TO-92 200mA 500mA 1.0W 200mA 500mA
Notes:
† ID (continuous) is limited by max rated Tj.
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
3
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves
2.5
2.0
1.5
1.0
0.5
00 10 20 30 40 50 0 2 4 6 8 10
0.1 1.0 10 100
1.0
0.1
0.01
0.001
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150
2.0
1.0
0
TO-92
T
A
= -55
O
C
25
O
C
TO-92 (pulsed)
8V
6V
4V
0.001 0.01 0.1 1.0 10
8V
6V
4V
TO-92 (DC)
T
C
= 25
O
C
TO-92
P
D
= 1.0W
T
C
= 25
O
C
V
GS
= 10V
Saturation Characteristics
Maximum Rated Safe Operating Area Thermal Response Characteristics
Thermal Resistance (normalized)
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature
Output Characteristics
I
D
(amperes)
V
DS
(volts)
G
FS
(seimens)
P
D
(watts)
T
C
(
O
C)
I
D
(amperes)
V
DS
(volts) t
p
(seconds)
I
D
(amperes)
V
DS
(volts)
I
D
(amperes)
V
GS
= 10V
V
DS
= 25V
125
O
C
2.5
2.0
1.5
1.0
0.5
0
4
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves (cont.)
0 2 4 6 8 10
2.5
2.0
1.5
1.0
0.5
0
-50 0 50 100 150
1.1
1.0
0.9
0 0.5 1.0 1.5 2.0 2.5
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1.0
VDS = 10V
V(th) @ 1.0mA
VGS = 4.5V
5.0
4.0
3.0
2.0
1.0
0
TA = -55OC
25OC
40 pF
40V
80 pF
1.9
1.6
1.3
1.0
0.7
0.4
100
75
50
25
0
0 10 20 30 40
f = 1MHz
CISS
C
OSS
CRSS
RDS @ 10V, 1.0A
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Te mperature
On-Resistance vs. Drain Current
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
C (picofarads)
I
D
(amperes)
T
J
(
O
C)
R
DSS(ON)
(ohms)
I
D
(amperes)
V
GS (volts)
V
DS
(volts)
V
GS
(volts)
T
j
(
O
C)
VGS = 10V
VDS = 25V
125OC
-50 0 50 100 150
k—>*>| w T L 3 # 3 3 Front View Side View if i Bottom View EX inc. nnyvaie, CA 94039 Tei. 403-222-3333 www.5upenex. com
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
2N7000
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-2N7000
C062813
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014.014.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022.022.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A