IRFHM3911TRPbF Datasheet by Infineon Technologies

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infineon Features PQFN 3.3X3.3 mm results in Benefits Standard Pack
IRFHM3911TRPbF
HEXFET® Power MOSFET
Notes through are on page 9
Absolute Maximum Ratings 
Parameter Max. Units
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.2
A
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 6.6
IDM Pulsed Drain Current 36
PD @TA = 25°C Power Dissipation 2.8
W
PD @TC(Bottom) = 25°C Power Dissipation 29
Linear Derating Factor 0.023 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited) 20
VDSS 100 V
RDS(on) max
(@VGS = 10V) 115m
Qg (typical) 17nC
ID
(@TC (Bottom) = 25°C) 11 A
Applications
 POE+ Power Sourcing Equipment Switch
Base part number Package Type Standard Pack
Form Quantity
IRFHM3911PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM3911TRPbF
Orderable Part Number
Features Benefits
Low Thermal Resistance to PCB Enable better thermal dissipation
Low Profile (<1.05mm) Increased Power Density
Industry-Standard Pinout results in Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
 Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
Large Safe Operating Area (SOA) Increased Ruggedness
PQFN 3.3X3.3 mm
S
G
S S
D
D
D
D
D
1 2016-2-23
ABVDSS ATJ AVG m
IRFHM3911TRPbF
2 2016-2-23
D
S
G
Static @ TJ = 25°C (unless otherwise specified) 
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 111 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 92 115 m VGS = 10V, ID = 6.3A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 35µA
VGS(th) Gate Threshold Voltage Coefficient ––– -7.6 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ=125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 6.3A
Qg Total Gate Charge ––– 17 26
Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– VDS = 50V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge ––– 5.4 ––– ID = 6.3A
Qgodr Gate Charge Overdrive ––– 7.7 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 6.8 –––
Qoss Output Charge ––– 5.9 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 3.8 –––
td(on) Turn-On Delay Time ––– 5.0 ––– VDD = 50V, VGS = 10V
tr Rise Time ––– 5.8 ––– ns ID = 6.3A
td(off) Turn-Off Delay Time ––– 16 ––– RG=1.8
tf Fall Time ––– 5.1 –––
Ciss Input Capacitance ––– 760 ––– VGS = 0V
Coss Output Capacitance ––– 73 ––– pF VDS = 50V
Crss Reverse Transfer Capacitance ––– 13 ––– ƒ = 1.0MHz
Avalanche Characteristics 
Parameter Typ. Max.
EAS Single Pulse Avalanche Energy ––– 41
IAR Avalanche Current ––– 6.3
Diode Characteristics 
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 11
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 36 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.3A, VGS = 0V
trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 6.3A, VDD = 50V
Qrr Reverse Recovery Charge ––– 381 571 nC di/dt = 500A/µs
µA

Parameter Typ. Max. Units
RJC (Bottom) Junction-to-Case ––– 4.3
RJC (Top) Junction-to-Case ––– 40
°C/W
RJA Junction-to-Ambient ––– 45
RJA (<10s) Junction-to-Ambient ––– 31
Thermal Resistance
@ / // 'D ‘ DS D18 I //
IRFHM3911TRPbF
3 2016-2-23
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 25°C
4.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
60µs PULSE WIDTH
Tj = 150°C
4.0V
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 50V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on)
, Drain-to-Source On Resistance
(Normalized)
ID = 6.5A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 6.3A
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IRFHM3911TRPbF
4 2016-2-23
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25 50 75 100 125 150
TC , Case Temperature (°C)
0
2
4
6
8
10
12
-ID, Drain Current (A)
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 35µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10 100 1000
VDS, Drain-toSource Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
100µsec
DC
OPERATION IN THIS AREA
LIMITED BY RDS(on)
@
IRFHM3911TRPbF
5 2016-2-23
Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulsewidth
4 8 12 16 20
VGS, Gate-to-Source Voltage (V)
50
100
150
200
250
300
350
400
RDS(on), Drain-to -Source On Resistance (m)
TJ = 25°C
TJ = 125°C
ID = 6.3A
25 50 75 100 125 150
Starting T
J , Junction Temperature (°C)
0
40
80
120
160
200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.4A
2.7A
BOTTOM 6.3A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.01
0.1
1
10
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
Duty Cycle = Single Pulse
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IRFHM3911TRPbF
6 2016-2-23
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 19. Gate Charge Waveform
Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
Fig 16a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 16b. Unclamped Inductive Waveforms
VDD
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IRFHM3911TRPbF
7 2016-2-23
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Outline “C” Package Details
PQFN 3.3 x 3.3 Outline “G” Package Details
5876
#1 324
#1 2 3 4
8765
5876
1324
1234
8765
hug://www.\n‘.com/gackage/ hug://www.irf.com/gackage/
IRFHM3911TRPbF
8 2016-2-23
PQFN 3.3 x 3.3 Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Pitch between successive cavity centers
Overall width of the carrier tape
Bo
W
P1
Ao
Ko
DIMENSION (MM)
CODE MIN MAX
DIMENSION (INCH)
MIN MAX
3.50 3.70 .138 .146
1.10 1.30
7.90 8.10
.043 .051
11.80 12.20
.311 .319
12.30 12.50
.465 .480
.484 .492
3.50 3.70 .138 .146
DESCRIPTION
W1
Qty 4000
Reel Diameter 13 Inches
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
PQFN 3.3 x 3.3 Part Marking
XXXX
?YWW?
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
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IRFHM3911TRPbF
9 2016-2-23
Qualification Information
Qualification Level
Moisture Sensitivity Level PQFN 3.3mm x 3.3mm MSL1
(per JEDEC J-STD-020D††)
RoHS Compliant Yes
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 2.06mH, RG = 50, IAS = 6.3A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 20A by source bonding technology.
IMPORTANT NOTICE no event www.infineon.com) WARNINGS LO‘
IRFHM3911TRPbF
10 2016-2-23
Revision History
Date Comments
6/5/2014  Updated schematic on page 1
 Updated tape and reel on page 8
7/1/2014  Remove “SAWN” package outline on page 7.
2/23/2016
 Updated datasheet with corporate template
 Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and
“Option G” on page 7.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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