VS-6CWQ10FNPbF Datasheet by Vishay General Semiconductor - Diodes Division

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VS-6CWQ10FNPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 1Document Number: 94250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 3.5 A
FEATURES
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-6CWQ10FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 2 x 3.5 A
VR100 V
VF at IFSee Electrical table
IRM 4.9 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 5 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 7 A
VRRM 100 V
IFSM tp = 5 μs sine 440 A
VF3 Apk, TJ = 125 °C (per leg) 0.63 V
TJRange -40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ10FNPbF UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform
3.5
A
per device 7
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
440
10 ms sine or 6 ms rect. pulse 70
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1 A, L = 10 mH 5.0 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
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VS-6CWQ10FNPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 2Document Number: 94250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
3 A TJ = 25 °C 0.81
V
6 A 0.96
3 A TJ = 125 °C 0.63
6 A 0.74
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
1
mA
TJ = 125 °C 4.9
Threshold voltage VF(TO) TJ = TJ maximum 0.48 V
Forward slope resistance rt30.89 m
Typical junction capacitance per leg CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 92 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -40 to +150 °C
Maximum thermal resistance,
junction to case
per leg RthJC
DC operation
See fig. 4
4.70 °C/W
per device 2.35
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 6CWQ10FN
dPtot
dTJ
------------- 1
RthJA
--------------<
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VS-6CWQ10FNPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 3Document Number: 94250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
100
10
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
1.2
0.8 1.6 2.0 2.4 2.8 3.2
0.4
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.0001
0.1
1
10
0.01
0.001
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80 100
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
20 40 60 100
80
0
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-6CWQ10FNPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 4Document Number: 94250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
110
120
115
125
130
135
140
145
155
150
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
2134
5
0
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
DC
0
0.5
1.5
3.0
3.5
2.5
2.0
1.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
2134
5
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
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VS-6CWQ10FNPbF
www.vishay.com Vishay Semiconductors
Revision: 14-Jan-11 5Document Number: 94250
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
2- Current rating (7 A)
1- Vishay Semiconductors product
3- Center tap configuration-
4
4- Package identifier:
W = D-PAK
5- Schottky “Q” series
6- Voltage rating (10 = 100 V)
7- FN = TO-252AA (D-PAK)
8- None = tube (50 pieces)
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
- PbF = lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
6VS- C W Q 10 FN TRL PbF
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Outline Dimensions
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Revision: 05-Dec-12 1Document Number: 95016
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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