5,9,11xMTxxKB Datasheet by Vishay General Semiconductor - Diodes Division

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International I223 Rectifier wwwmsnaymm 1
55 A
90 A
110 A
THREE PHASE CONTROLLED BRIDGE
Bulletin I27503 08/97
MT..KB SERIES
Power Modules
53MT.KB 93MT.KB 113MT.KB
Parameters 52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
IO55 90 110 A
@ TC85 85 85 °C
IFSM @ 50Hz 390 950 1130 A
@ 60Hz 410 1000 1180 A
I2t @ 50Hz 770 4525 6380 A2s
@ 60Hz 700 4130 5830 A2s
I2t 7700 45250 63800 A2s
VRRM range 800 to 1600 V
TSTG range - 40 to 125 °C
TJrange - 40 to 125 °C
Major Ratings and Characteristics
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 VRMS isolating voltage
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
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\mernationo IQRRectifler
53-93-113MT..KB Series
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
IOMaximum DC output current 55 90 110 A 120° Rect conduction angle
@ Case temperature 85 85 85 °C
ITSM Maximum peak, one-cycle 390 950 1130 A t = 10ms No voltage
forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 330 800 950 t = 10ms 100% VRRM
345 840 1000 t = 8.3ms reapplied Initial
I2t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.
700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% VRRM
500 2920 4120 t = 8.3ms reapplied
I2t Maximum I2t for fusing 7700 45250 63800 A2s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 1.17 1.09 1.04 V (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.45 1.27 1.27 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 12.40 4.10 3.93 m(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 11.04 3.59 3.37 (I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 2.68 1.65 1.57 V Ipk = 150A, TJ = 25°C
tp = 400µs single junction
di/dt Max. non-repetitive rate 150 A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x IT(AV),
of rise of turned on current Ig = 500mA, tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
mA resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Forward Conduction
Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM/IDRM max.
Type number Code repetitive peak non-repetitive peak peak off-state voltage @ TJ = 125°C
reverse voltage reverse voltage gate open circuit
VV VmA
80 800 900 800
100 1000 1100 1000
53/52/51MT..KB 120 1200 1300 1200 10
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
93/92/91MT..KB 100 1000 1100 1000
113/112/111MT..KB 120 1200 1300 1200 20
140 1400 1500 1400
160 1600 1700 1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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\mernationo IQRRectifler wwwmsnaymm 3
53-93-113MT..KB Series
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
VINS RMS isolation voltage 4000 V TJ = 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise 500 V/µs TJ = TJ max., linear to 0.67 VDRM,
of off-state voltage (*) gate open circuit
Blocking
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
PGM Max. peak gate power 10 W TJ = TJ max.
PG(AV) Max. average gate power 2.5
IGM Max. peak gate current 2.5 A
-VGT Max. peak negative 10 V
gate voltage
VGT Max. required DC gate 4.0 V TJ = - 40°C
voltage to trigger 2.5 TJ = 25°C Anode supply = 6V, resistive load
1.7 TJ = 125°C
IGT Max. required DC gate 270 TJ = - 40°C
current to trigger 150 mA TJ = 25°C Anode supply = 6V, resistive load
80 TJ = 125°C
VGD Max. gate voltage 0.25 V @ TJ = TJ max., rated VDRM applied
that will not trigger
IGD Max. gate current 6 mA
that will not trigger
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
TJMax. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 125 °C
range
RthJC Max. thermal resistance, 0.18 0.14 0.12 K/W DC operation per module
junction to case 1.07 0.86 0.70 DC operation per junction
0.19 0.15 0.12 120° Rect condunction angle per module
1.17 0.91 0.74 120° Rect condunction angle per junction
RthCS Max. thermal resistance, 0.03 K/W Per module
case to heatsink Mounting surface smooth, flat an greased
T Mounting to heatsink 4 to 6 Nm
torque ± 10% to terminal 3 to 4
wt Approximate weight 225 g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
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\mernationo IQRRectifler Smusmda‘ conducuan @ T Remangu‘av conducnon @ T 55%!!!
53-93-113MT..KB Series
Bulletin I27503 08/97
123
1- Current rating code: 5 = 55 A (Avg)
9 = 90 A (Avg)
11 = 110 A (Avg)
2- Circuit configuration code: 3 = Full-controlled bridge
2 = Positive half-controlled bridge
1 = Negative half-controlled bridge
3- Essential part number
4- Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)
5- Generation II
6- Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
4
Device Code
Ordering Information Table
5 6
11 3 MT 160 K B S90
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o120o90o60o30o180o120o90o60o30o
53/52/51MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W
93/92/91MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
113/112/111MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
negative half-controlled bridge
(51, 91, 111MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
full-controlled bridge
(53, 93, 113MT..KB)
Document Number: 93557
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53-93-113MT..KB Series
Bulletin I27503 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)
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53-93-113MT..KB Series
Bulletin I27503 08/97
Fig. 2 - Forward Voltage Drop Characteristics
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Ratings Characteristic
80
90
100
110
120
130
0 102030405060
Maximum Allowable Case Temperature (°C)
Total Output Current (A)
120°
(Rect)
53MT..KB Series
1
10
100
1000
01234567
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
53MT..KB Series
Per Junction
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.12 K/W
0.2 K/W
0.4 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0 5 10 15 20 25 30 35 40 45 50 55
Total Output Current (A)
Maximum Total Power Loss (W)
12
(Rect)
53MT..KB Series
T = 12C
J
150
200
250
300
350
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
53MT..KB Series
Per Junction
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM J
150
200
250
300
350
400
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pul se Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
53MT..KB Series
Per Junction
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\mernationo IQRRectifler / / / /// wwwmsnaymm 7
53-93-113MT..KB Series
Bulletin I27503 08/97
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristic
80
90
100
110
120
130
0 20406080100
Maximum Allowable Case Temperature (°C)
Total Output Current (A)
120°
(Rect)
93MT..KB Series
1
10
100
1000
0.511.522.533.54
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
93MT..KB Series
Per Junction
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.2 K/W
0.12 K/W
0.4 K/W
0
50
100
150
200
250
300
0 102030405060708090
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
93MT..KB Series
T = 125°C
J
400
450
500
550
600
650
700
750
800
850
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
93MT..KB Series
Per Junction
At Any Rated Load Condition And With
Rated V Appli ed Following Surge.
RRM
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
300
400
500
600
700
800
900
1000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
93MT..KB Series
Per Junction
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Maximum Non Repetitive Surge Current
RRM
J
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\mernationo IQRRectifler 6% j§ / / / / /// wwwmsnaymm a
53-93-113MT..KB Series
Bulletin I27503 08/97
Fig. 12 - Forward Voltage Drop Characteristics
Fig. 13 - Total Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 11 - Current Ratings Characteristic
80
90
100
110
120
130
0 20406080100120
Maximum Allowable Case Temperature (°C)
Total Output Current (A)
120°
(Rect)
113MT..KB Series
1
10
100
1000
0.511.522.533.54
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
113MT..KB Series
Per Junction
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.12 K/W
0.4 K/W
0.2 K/W
0
50
100
150
200
250
300
350
0 102030405060708090100110
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
113MT..KB Series
T = 125°C
J
400
500
600
700
800
900
1000
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
113MT..KB Series
Per Junction
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
400
500
600
700
800
900
1000
1100
1200
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
113MT..KB Series
Per Junction
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Maximum Non Repetitive Surge Current
RRM
J
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\mernationo IQRRectifler 93w KB Se wwwmsnaymm s
53-93-113MT..KB Series
Bulletin I27503 08/97
Fig. 16 - Thermal Impedance ZthJC Characteristics
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 12 5 °C
VGD
IGD Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
a) Recommended l oad l ine f or
b) Recommended load line for
53/ 93/ 113MT..KB Series
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Per Junction
53MT..KB Series
113MT..KB Series
93MT..KB Series
Steady State Value
R = 1.07 K/W
R = 0.86 K/W
R = 0.70 K/W
(DC Operation)
thJC
thJC
thJC
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— VISHAYE
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

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