IXYH50N120C3D1 Datasheet by IXYS

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© 2016 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1 VCES = 1200V
IC100 = 50A
VCE(sat) 


3.5V
tfi(typ) = 43ns
DS100388D(04/16)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
GCE Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V
VGE(th) IC= 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 A
TJ = 125C 500 μA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 50A, VGE = 15V, Note 1 3.5 V
TJ = 150C 4.2 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1M 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (Chip Capability) 90 A
IC100 TC= 100°C 50 A
IF110 TC= 110°C 25 A
ICM TC= 25°C, 1ms 210 A
SSOA VGE = 15V, TVJ = 150°C, RG = 5 ICM = 100 A
(RBSOA) Clamped Inductive Load @VCE VCES
PCTC= 25°C 625 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
1200V XPTTM IGBT
GenX3TM w/ Diode
IXYS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 50A, VCE = 10V, Note 1 20 32 S
Cies 3100 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 230 pF
Cres 66 pF
Qg(on) 142 nC
Qge IC = 50A, VGE = 15V, VCE = 0.5 • VCES 23 nC
Qgc 60 nC
td(on) 28 ns
tri 62 ns
Eon 3.0 mJ
td(off) 133 ns
tfi 43 ns
Eoff 1.0 1.7 mJ
td(on) 28 ns
tri 68 ns
Eon 6.0 mJ
td(off) 160 ns
tfi 60 ns
Eoff 1.4 mJ
RthJC 0.20 °C/W
RthCS 0.21 °C/W
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 0.5 • VCES, RG = 5
Note 2
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
VCE = 0.5 • VCES, RG = 5
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
(TJ = 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
VF 3.00 V
TJ = 150°C 1.75 V
IRM 9 A
trr 195 ns
RthJC 0.90 °C/W
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V TJ = 100°C
IF = 30A,VGE = 0V, Note 1
Reverse Diode (FRED)
lc - Amperes \c:1uuA VL‘E A Vans 6 7 a 9 w u 12 VGEV Vous ‘3 Vcasan - Normahzed © 2016 IXYS CORPORATION, Au HIQMS Reserved
© 2016 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
00.511.522.533.544.555.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
0 5 10 15 20 25
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
8V
11V
12V
7V
6V
9V
14V
13V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
10
20
30
40
50
60
70
80
90
100
012345678
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
5V
V
GE
= 15V
13V
12V
11V
10V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 50A
I
C
= 25A
I
C
= 100A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 100A
T
J
= 25ºC
50A
25A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
EIXYS w 14 32 «2 g 25 m «a E 24 g (I: . B ; 2“ a U? 15 > 6 «2 4 a 2 4 a a a m 20 an w 50 60 70 so an we 0 IC - Amperes lc « Ampere: 0 mm IXVS Reserves the nght to Change Limwts‘ Test Condihons, and Dimenswons.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
36
40
44
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
TJ
= - 40ºC
25ºC
15C
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
TJ
= 150ºC
RG = 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
020406080100120140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 50A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
' IXYS \ \ Eufl— Emv--_ — 5 i T1=15LTC V5E=15V 25 30 vCE snuv _ _ _ —;’l / 25 g 4 mam 20 m g / E 1. E) 20 3 15 g E \\ E ; .5 , 7 a z m w / / 2 1D "' ’ ”as ._ - — m / z ,/ - - -- /& , I 5 05 ’ ’ z ’ , u u an 5 m <5 2a="" 25="" an="" 20="" rg-ohms="" f="" nu="" ’="" ’="" f="" 120="" 7="" a="" ’="" ’="" i="" ’="" ’="" ,="" —’="" ,4="" 3="" ,="" ,,="" ,="" ,="" ’="" z="" ’="" g="" m.="" ,="" m="" z="" i="" 2="" ¥=""> , , z : 5n ’ ——_,._\4 _ z z \ _. — / \\ 1 -_ _ - — on a 2D 25 5 we in— ‘mom -- 229 14a Rs-Sfl VsE=|5V 12L) v uav 200 CE ; 120 2 mm 130% § § n:125“c '2 g we § an 160 E g E E E Bu ; an 140 g i ‘ 3 “ 60 w 120 2L) I00 40 u an 20 2n an 40 5D 60 m an 90 we \c-Amperes © 2016 IXYS CORPORATION, Au HIQMS Reserved
© 2016 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
5 1015202530
R
G
- Ohms
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
5 1015202530
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
3
6
9
12
15
18
21
E
on
- MilliJoules
E
off
E
on
R
G
= 5V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
R
G
= 5V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
80
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
110
120
130
140
150
160
170
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
sun m m 25a m c 2 tan C o g 2% § 2 2 12a m 2 15a 2 : 3 an mu 5“ 4n 2m 2w nan 12a an 1w Nanoseoonds 4n Fig. 21. Maxlmum Transient Thermal 01 am ZuwcAK/W aam com 0 mm 0 mm u 001 Pu‘se Width - Secnnd IXVS Reserves the nght to Change Limwts‘ Test Condihons, and Dimenswons.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
IXYS REF: IXY_50N120C3D1(6N)05-04-12
Fig. 21. Maximum Transient Thermal Impedance (Diode)
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
40
80
120
160
200
240
20 30 40 50 60 70 80 90 100
IC - Amperes
t
r i
- Nanoseconds
20
24
28
32
36
40
44
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC, 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
25 50 75 100 125 150
TJ - Degrees Centigrade
t
r i
- Nanoseconds
20
24
28
32
36
40
44
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
50
100
150
200
250
300
350
5 1015202530
RG - Ohms
t
r i
- Nanoseconds
15
25
35
45
55
65
75
85
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
m /// m / / m =15a°c w 100°C ‘F / / [A] m [we] m / m VF IV] so, an IHM DA 0A / an [A] /)v 20 // m a a m by w 60 n5 [1 M m 20 I2U a 200 400 sec mm mm rue/m [A/us] © 2016 IXYS CORPORATION, Au HIQMS Reserved
© 2016 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 22. Forward Current I
F
vs V
F
0
10
20
30
40
50
60
70
00.511.522.533.54
V
F
[V]
I
F
[A]
25ºC
T
VJ
= 150ºC
100ºC
Fig. 23. Reverse Recovery Charge QRM vs. -di
F
/dt
0
1
2
3
4
5
100 1000
-di
F
/dt [A/µs]
Q
RM
C]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A
15A
30A
500
Fig. 24. Peak Reverse Current IRM vs. -di
F
/dt
0
10
20
30
40
50
60
0 200 400 600 800 1000
-di
F
/dt [As]
IRM
[A]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A, 30A, 15A
Fig. 25. Dynamic Parameters Q
RM
, I
RM
vs. T
VJ
0
0.5
1
1.5
2
20 40 60 80 100 120 140 160
T
VJ
[ºC]
IRM & QRM [normalized]
I
RM
Q
RM
Fig. 26. Recovery Time t
rr
vs. -di
F
/dt
120
140
160
180
200
220
0 200 400 600 800 1000
-di
F
/dt [As]
t
rr
[ns]
T
VJ
= 100ºC
V
R
= 600V
IF = 60A
30A
15A
Fig. 27. Peak Forward Voltage V
FR
, t
rr
vs -di
F
/dt
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700 800 900 1000
-di
F
/dt [As]
V
FR
[V]
0
0.2
0.4
0.6
0.8
1
1.2
t
rr
[µs]
t
rr
T
VJ
= 100ºC
I
F
= 30A
V
FR
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