MUN(2,5)213, MMUN2213L, DTC144Exx, NSBC144EF3 Datasheet by onsemi

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cmillcr rcl l or. The BRT climinalc; these individual compuncnll by integrating llrern into a single device. The use of a BRT can reduce bolh syslcm cost and board spacc. Features - Simpli cs Circuil Design - Reduces Board Space - Reduces Component Coum - s and NSV Prefix for Aummmivc and Other Applicalilms Requiring Unique Site and Conlrrrl Change Requiremems; AECrQlUl Qualified and PPAP Capable I These Devices arc Pb—Frcc, Halogen FICc/BFR Free and are ROHS Curnplinnl MAXIMUM RATINGS m : 25°C) naurrg Symbol Max Unll Collector-Ease Vollage VCEQ so Vdc Collector-Emmet Vollage VCEQ so Vdc Collector Currenl — Coniinuous lo we mAdc Inpul Forward Vollage vwm, 40 Vdc Inpul Rel/else Vollage vam, in Vdc SIresses exceeding Ihose lisled in me Maxrmum Ralrrrgs laole may damage Ihe devree, u any oi mese limris are exceeded device lunclionalrly should nol he assumed damage may occur and reliability may he anecled, o Semlcunduclurcampuwnu irransnras LLC 2m2 1 March, 2019 — Rev. 5 0N Semiconductor® www.0nsem om (INPUT) m a e 0 i W) fi cs xxx Spe M Dal . : Pb. (Nole. Microdoi may "Dale Code orlemallon m on manulacmrlng loea ORDERING IN see derailed alderlng‘ markln me package drmensrans semi
© Semiconductor Components Industries, LLC, 2012
March, 2019 Rev. 5
1Publication Order Number:
DTC144E/D
MUN2213, MMUN2213L,
MUN5213, DTC144EE,
DTC144EM3, NSBC144EF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
CollectorBase Voltage VCBO 50 Vdc
CollectorEmitter Voltage VCEO 50 Vdc
Collector Current Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G=PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC59
CASE 318D
STYLE 1
SOT23
CASE 318
STYLE 6
SC70/SOT323
CASE 419
STYLE 3
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
(Rotated 0° Clockwise
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
PIN CONNECTIONS
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MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping
MUN2213T1G, SMUN2213T1G* 8C SC59
(PbFree)
3000 / Tape & Reel
MMUN2213LT1G, SMMUN2213LT1G* A8C SOT23
(PbFree)
3000 / Tape & Reel
SMMUN2213LT3G A8C SOT23
(PbFree)
10000 / Tape & Reel
MUN5213T1G, SMUN5213T1G* 8C SC70/SOT323
(PbFree)
3000 / Tape & Reel
DTC144EET1G, SDTC144EET1G* 8C SC75
(PbFree)
3000 / Tape & Reel
DTC144EM3T5G, NSVDTC144EM3T5G* 8C SOT723
(PbFree)
8000 / Tape & Reel
NSBC144EF3T5G D SOT1123
(PbFree)
8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
12510075502502550
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT1123; 100 mm2, 1 oz. copper trace
(5) SOT723; Minimum Pad
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Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC59) (MUN2213)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 540
370
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 264
287
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SOT23) (MMUN2213L)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 508
311
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 174
208
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5213)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 618
403
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 280
332
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SC75) (DTC144EE, SDTC144EE)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 600
400
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SOT723) (DTC144EM3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 480
205
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
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Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT1123) (NSBC144EF3)
Total Device Dissipation
TA = 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
PD254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
RqJA 493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL 193 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.1
mAdc
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
CollectorEmitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE 80 140
CollectorEmitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
1.2 0.8
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 2.0 mA)
Vi(on) 3.0 1.6
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH 4.9 − −
Vdc
Input Resistor R1 32.9 47 61.1 kW
Resistor Ratio R1/R20.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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TYPICAL CHARACTERISTICS
MUN2213, MMUN2213L, MUN5213, DTC144EE, SDTC144EE, DTC144EM3
Figure 2. VCE(sat) vs. IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (V)
TA=25°C
75°C
25°C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
25°C
100
10 1 100
25°C
75°C
50
010203040
3.2
2.8
1.2
0.8
0.4
0
VR, REVERSE VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=25°C
TA=25°C
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1.6
2.0
2.4
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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TYPICAL CHARACTERISTICS NSBC144EF3
Figure 7. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
10
0.1
0.01
02040
50
IC, COLLECTOR CURRENT (mA)
1000
100
10.1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.001 04 8
Vin, INPUT VOLTAGE (V)
28
Figure 11. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
VR, REVERSE VOLTAGE (V)
30
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
25°C
VCE = 10 V
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
0.8
1.6
2.0
2.4
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
10
150°C
55°C
25°C
150°C
1
10
10 55°C
25°C
150°C
55°C
25°C
150°C
2012 16
1
24
0.01
MIN MOM MAX MIN mu H5 we was mus uns‘ um ans um mum unuz uum 035 an use mm mm uuzu nos um me was anus uum 27a 2m: 3m mas um mzz no ‘su we may 0059 0057 nu ma 2m uu57 nms nus: nzu can use was nma uuzo 254: 2m: 3m: muss mm am: We mugs nsemi com
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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PACKAGE DIMENSIONS
SC59
CASE 318D04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
[T T EE’ , i a: G9 020(oons)® D i LEM UL E:D
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
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PACKAGE DIMENSIONS
SC75/SOT416
CASE 463
ISSUE F
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
E
D
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
e n HE H5 ‘20 L uzs El L2 ms azn T STYLE‘ mm BASE 2 EMH’TER 3 COLLECTOR SOLDERING FOOTPRINT“ "Fov anemonex Infovmahon on em Pia-Free strategy and soldering detai‘s‘ p‘ease download the ON Semiconducmr Soldenng and Mounllng Techniques Reference Manuah SOLDERRM/D, www.cnsemi.com 11 ‘25 azs
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PACKAGE DIMENSIONS
SOT723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 Y
2X
E
12
3
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
‘Fov add Mounl
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PACKAGE DIMENSIONS
SOT1123
CASE 524AA
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN MAX
MILLIMETERS
A0.34 0.40
b0.15 0.28
c0.07 0.17
D0.75 0.85
E0.55 0.65
0.95 1.05
L0.185 REF
HE
D
E
c
A
Y
X
HE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
b1 0.10 0.20
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
0.35 0.40
TOP VIEW
SIDE VIEW
3X
BOTTOM VIEW
L2
L
3X
DIMENSIONS: MILLIMETERS
1.20
2X
0.26
3X 0.34
PACKAGE
OUTLINE
b
2X b1
e
0.08 XY
L2 0.05 0.15
0.20
0.38
1
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