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NUD3112 Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 2002
October, 2016 Rev. 11
1Publication Order Number:
NUD3112/D
NUD3112
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps, and small DC motors without the need
of a freewheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
Provides a Robust Driver Interface Between D.C. Relay Coil and
Sensitive Logic Circuits
Optimized to Switch Relays of 12 V Rail
Capable of Driving Relay Coils Rated up to 6.0 W at 12 V
Internal Zener Eliminates the Need of FreeWheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low VDS(ON) Reduces System Current Drain
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These are PbFree Devices
Typical Applications
Telecom: Line Cards, Modems, Answering Machines, FAX
Computers and Office: Photocopiers, Printers, Desktop Computers
Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
Industrial: Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
INTERNAL CIRCUIT DIAGRAMS
Drain (3)
1.0 k
300 k
Gate (1)
Source (2)
Drain (6)
1.0 k
300 k
Gate (2)
Source (1)
Drain (3)
1.0 k
300 k
Gate (5)
Source (4)
CASE 318FCASE 318
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MARKING DIAGRAMS
SOT23
CASE 318
STYLE 21
JW5 MG
G
JW5 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
SC74
CASE 318F
STYLE 7
JW5 = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
JW5 MG
G
1
2
3
1
6
Device Package Shipping
ORDERING INFORMATION
NUD3112LT1G SOT23
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SZNUD3112LT1G
SC74
(PbFree)
3000 / Tape &
Reel
NUD3112DMT1G
SOT23
(PbFree)
3000 / Tape &
Reel
SZNUD3112DMT1G SC74
(PbFree)
3000 / Tape &
Reel
NUD3112
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS Drain to Source Voltage – Continuous 14 Vdc
VGS Gate to Source Voltage – Continuous 6 Vdc
IDDrain Current – Continuous 500 mA
EzSingle Pulse DraintoSource Avalanche Energy (TJinitial = 25°C) 50 mJ
TJJunction Temperature 150 °C
TAOperating Ambient Temperature 40 to 85 °C
Tstg Storage Temperature Range 65 to +150 °C
PDTotal Power Dissipation (Note 1) SOT23
Derating Above 25°C
225
1.8
mW
mW/°C
PDTotal Power Dissipation (Note 1) SC74
Derating Above 25°C
380
3.0
mW
mW/°C
RqJA Thermal Resistance JunctiontoAmbient (Note 1) SOT23
SC74
556
329
°C/W
ESD Human Body Model (HBM) According to EIA/JESD22/A114 2000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted onto minimum pad board.
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
VBRDSS Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
14 16 17 V
BVGSO Ig = 1.0 mA − − 8 V
IDSS Drain to Source Leakage Current
(VDS = 12 V , VGS = 0 V, TA = 25°C)
(VDS = 12 V, VGS = 0 V, TA = 85°C)
20
40
mA
IGSS Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
35
65
mA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TA = 85°C)
0.8
0.8
1.2
1.4
1.4
V
RDS(on) Drain to Source OnResistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TA=85°C)
(ID = 500 mA, VGS = 5.0 V, TA=85°C)
1.2
1.3
0.9
1.3
0.9
W
IDS(on) Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TA = 85°C)
300
200
400
mA
gFS Forward Transconductance
(VOUT = 12.0 V, IOUT = 0.25 A)
350 490 mmhos
NUD3112
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3
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol UnitMaxTypMinCharacteristic
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
23 pF
Coss Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
30 pF
Crss Transfer Capacitance
(VDS = 12.0 V, VGS = 0 V, f = 10 kHz)
7pF
SWITCHING CHARACTERISTICS
Symbol Characteristic Min Typ Max Units
tPHL
tPLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V)
21
91
nS
tf
tr
Transition Times:
Fall Time; Figure 1 (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1 (VDS = 12 V, VGS = 5.0 V)
36
61
nS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Switching Waveforms
Vout
Vin
0 V
VOH
VIH
tr
tf
tPLH
tPHL
50%
90%
50%
10% VOL
NUD3112
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4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified)
Figure 2. Output Characteristics
1
0.1
0.01
0.001
0.0001
0.00001
0.0 0.1 0.2 0.3 0.4 0.5 0.6
1
0.1
0.01
0.001
0.0001
3.50.5 1.0 1.5 2.0 2.5
25°C
125°C
ID = 0.5 A
VGS = 3.0 V
1200
1000
600
200
0
50 25 25 75 1250
21
0.1 1 1000
4500
3500
2500
1500
500
0.6 0.8 1 1.2 1.4 1.6
125°C
3.0
800
400
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
ID,DRAIN CURRENT (A)
TEMPERATURE (°C)
IZ, ZENER CURRENT (mA)
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. Transfer Function
Figure 4. OnResistance Variation vs.
Temperature
Figure 5. RDS(ON) Variation vs. GatetoSource
Voltage
Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener
Current
VGS = 3.0 V
VGS = 5.0 V
50 100
15.98
50 25 0 25 125
TEMPERATURE (°C)
IZ = 10 mA
10 100
25°C
0.7 0.8
VGS = 2.0 V
VGS = 1.5 V
VGS = 1.0 V
0.00001
4.0 4.5 5.0
85°C
40°C
ID = 0.25 A
VGS = 3.0 V
ID = 0.5 A
VGS = 5.0 V 40°C85°C 25°C
4000
3000
2000
1000
0
50 75 100
15.96
15.94
15.92
15.90
15.88
15.86
15.84
15.82
15.80
VZ, ZENER VOLTAGE (V)
VZ, ZENER CLAMP VOLTAGE (V)
20
19
18
17
16
15
14
13
40°C
85°C
ID = 250 mA
VDS = 0.8 V
ID,DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE RESISTANCE (mW)
NUD3112
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5
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified)
ID, DRAIN CURRENT (A)
0.4
1.2
0.05 0.10 0.15 0.20 0.30
125°C
0.35
Figure 8. OnResistance vs. Drain Current and
Temperature
Figure 9. Gate Leakage vs. Temperature
1.1
0.9
0.8
0.25
45
35
25
10
0
50 25 25 75 1250
30
15
TEMPERATURE (°C)
50 100
VGS = 3.0 V
VGS = 5.0 V
1
0.7
0.6
0.5
0.45 0.500.40
85°C
25°C
40°C
40
5
20
VGS = 3.0 V
RDS(on), DRAINTOSOURCE RESISTANCE (W)
IGSS, GATE LEAKAGE (mA)
Figure 10. Typical Application Circuit
+12V
1.0 k
300 k
+5V / 3.3V
ESD Zener
Relay
ESD Zener
clamp Zener
clamp Zener
Logic
NUD3112
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6
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NUD3112
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7
PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE N
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03, 04 OBSOLETE. NEW STANDARD 318F05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
L
0°10°0°10°
q
q
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
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