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BAS19(20,21)LT1, BAS21DW5T1 Datasheet

ON Semiconductor

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Datasheet

© Semiconductor Components Industries, LLC, 1999
November, 2016 − Rev. 18 1Publication Order Number:
BAS19LT1/D
BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage BAS19
BAS20
BAS21
VR120
200
250
Vdc
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM 120
200
250
Vdc
Continuous Forward Current IF200 mAdc
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz) IFSM 2 A
Repetitive Peak Forward Current
(Pulse Train: TON = 1 s, TOFF = 0.5 s) IFRM 0.6 A
Junction and Storage Temperature
Range TJ, Tstg −55 to +150 °C
Power Dissipation (Note 1) PD385 mW
Electrostatic Discharge ESD HM < 500
MM < 400
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
HIGH VOLTAGE
SWITCHING DIODE
5
CATHODE
1
ANODE
MARKING DIAGRAMS
3
CATHODE
1
ANODE
4
CATHODE
3
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SC−88A (SOT−353)
CASE 419A
SOT−23
SC−88A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
2
3
1
Jx M G
G
x = P, R, or S
P = BAS19L
R = BAS20L
S = BAS21L or BAS21DW5
M = Date Code
G= Pb−Free Package
2
3
Jx M G
G
13
321
45
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
(Note: Microdot may be in either location)
www.onsemi.com
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
2
THERMAL CHARACTERISTICS (SOT−23)
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
RJA 556 °C/W
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient RJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic Symbol Max Unit
Power Dissipation (Note 4) PD385 mW
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
RJA 328
3.0 °C/W
mW/°C
Maximum Junction Temperature TJmax 150 °C
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Voltage Leakage Current
(VR = 100 Vdc) BAS19
(VR = 150 Vdc) BAS20
(VR = 200 Vdc) BAS21
(VR = 100 Vdc, TJ = 150°C) BAS19
(VR = 150 Vdc, TJ = 150°C) BAS20
(VR = 200 Vdc, TJ = 150°C) BAS21
IR
0.1
0.1
0.1
100
100
100
Adc
Reverse Breakdown Voltage
(IBR = 100 Adc) BAS19
(IBR = 100 Adc) BAS20
(IBR = 100 Adc) BAS21
V(BR) 120
200
250
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1.0
1.25
Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz) CD 5.0 pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
3
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
IR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
VF, FORWARD VOLTAGE (V)
0.1
10
20
VR, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
50 80 110 140 170
1.6
0
VR, REVERSE VOLTAGE (V)
1.4
1.0
0.6
0.4
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
Figure 2. VF vs. IFFigure 3. IR vs. VR
Figure 4. Capacitance
IR, REVERSE CURRENT (μA)
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
85°C
55°C
150°C
125°C
25°C
-55°C
200 230
0.8
1.2
1357
Cap
-40°C
260
150°C
125°C
85°C
55°C
25°C
30
0.001
tp, PULSE ON TIME (ms)
25
15
5
0
0.01 1 1000
Figure 5. Forward Surge Current
10
20
0.1 10 100
IFSM, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
TJ = 25°C prior to surge
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
BAS19LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
BAS19LT3G SOT−23
(Pb−Free) 10000 / Tape & Reel
NSVBAS19LT1G* SOT−23
(Pb−Free) 3000 / Tape & Reel
BAS20LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
BAS20LT3G SOT−23
(Pb−Free) 10000 / Tape & Reel
NSVBAS20LT3G* SOT−23
(Pb−Free) 10000 / Tape & Reel
SBAS20LT1G* SOT−23
(Pb−Free) 3000 / Tape & Reel
BAS21LT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
SBAS21LT1G* SOT−23
(Pb−Free) 3000 / Tape & Reel
BAS21LT3G SOT−23
(Pb−Free) 10000 / Tape & Reel
SBAS21LT3G* SOT−23
(Pb−Free) 10000 / Tape & Reel
BAS21DW5T1G SC−88A
(Pb−Free) 3000 / Tape & Reel
SBAS21DW5T1G* SC−88A
(Pb−Free) 3000 / Tape & Reel
SBAS21DW5T3G* SC−88A
(Pb−Free) 10000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
BAS19L, BAS20L, BAS21L, BAS21DW5
www.onsemi.com
6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H--- 0.10---0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
12 3
45
A
G
S
D 5 PL
H
C
N
J
K
−B−
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
SOLDER FOOTPRINT
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P
UBLICATION ORDERING INFORMATION
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BAS19LT1/D
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