PESD5V0S1Bx Datasheet

Nexperia USA Inc.

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Datasheet

1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD
plastic packages designed to protect one signal line from the damage caused by ESD and
other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0S1BA;PESD5V0S1BB;
PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 04 — 20 August 2009 Product data sheet
Table 1. Product overview
Type number Package
NXP JEITA
PESD5V0S1BA SOD323 SC-76
PESD5V0S1BB SOD523 SC-79
PESD5V0S1BL SOD882 -
nBidirectional ESD protection of one line nESD protection > 30 kV
nMax. peak pulse power: PPP = 130 W nIEC 61000-4-2, level 4 (ESD)
nLow clamping voltage: V(CL)R = 14 V nIEC 61000-4-5 (surge); IPP = 12 A
nUltra low leakage current: IRM = 5 nA nUltra small SMD plastic packages
nCellular handsets and accessories nCommunication systems
nPortable electronics nAudio and video equipment
nComputers and peripherals
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse stand-off voltage - - 5 V
Cddiode capacitance VR = 0 V;
f = 1 MHz - 3545pF
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 2 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
2. Pinning information
3. Ordering information
4. Marking
Table 3. Pinning
Pin Description Simplified outline Symbol
SOD323, SOD523
1 cathode 1
2 cathode 2
SOD882
1 cathode 1
2 cathode 2
001aab540
12
sym045
21
21
Transparent
top view
sym045
21
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323
PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523
PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm SOD882
Table 5. Marking codes
Type number Marking code
PESD5V0S1BA E6
PESD5V0S1BB L7
PESD5V0S1BL F1
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 3 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2] Measured from pin 1 to pin 2.
[1] Measured from pin 1 to pin 2.
[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power 8/20 µs[1][2] - 130 W
IPP peak pulse current 8/20 µs[1][2] -12A
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
Table 7. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge
capability IEC 61000-4-2 (contact
discharge)
[1][2] -30kV
HBM MIL-Std 883 - 10 kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2, level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 4 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
010
et
20 t (µs)
Ipp
(%)
40
120
0
40
80
30
mle218
100 % Ipp; 8 µs
50 % Ipp; 20 µs
001aaa191
Ipp
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.7 to 1 ns
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 5 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2] Measures from pin 1 to pin 2.
Table 9. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse stand-off voltage - - 5 V
IRM reverse leakage current VRWM = 5 V;
see Figure 6
- 5 100 nA
V(CL)R clamping voltage IPP = 1 A [1][2] --10V
IPP = 12 A [1][2] --14V
V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V
rdif differential resistance IR = 1 mA - - 50
Cddiode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 - 3545pF
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 6 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Tamb = 25 °C
Fig 3. Peak pulse power dissipation as a function of
exponential time duration tp; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
Tamb = 25 °C; f = 1 MHz
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
001aaa202
tp (µs)
110
4
103
10 102
102
103
Ppp
(W)
10
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
VR (V)
054231
001aaa203
30
26
34
38
Cd
(pF)
22
001aaa204
Tj (°C)
75 150125100
10
1
102
101
IRM(Tj)
IRM(Tj=85°C)
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 7 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Fig 7. ESD clamping test setup and waveforms
006aaa056
50
RZ
CZ
PESD5V0S1Bx
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
450
RG 223/U
50 coax
ESD TESTER 4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 8 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from
the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may
be used on lines where the signal polarities are above and below ground. They provide a
surge capability of up to 130 W per line for a 8/20 µs waveform.
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
Fig 8. Bidirectional protection of one signal line
006aaa057
PESD5V0S1Bx
GND
signal line
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 9 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
8. Package outline
Fig 9. Package outline SOD323 (SC-76)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD323
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1
c
Q
HDvA
M
X
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 10 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Fig 10. Package outline SOD523 (SC-79)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD523 SC-79 02-12-13
06-03-16
Plastic surface-mounted package; 2 leads SOD523
0 0.5 1 mm
scale
D
12
HE
Ebp
A
c
vMA
A
UNIT bpcDEv
mm
AH
E
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1) 0.34
0.26 0.17
0.11 0.1
0.85
0.75
1.25
1.15
0.65
0.58 1.65
1.55
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 11 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
Fig 11. Package outline SOD882
UNIT A1
max.
A(1) be
1L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.55
0.47
0.03 0.62
0.55 0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882 03-04-16
03-04-17
DE
1.02
0.95
L
E
(2)
2
1b
A1
A
D
L
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882
0 0.5 1 mm
scale
e1
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 12 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD5V0S1BA SOD323 4 mm pitch, 8 mm tape and reel -115 -135
PESD5V0S1BB SOD523 4 mm pitch, 8 mm tape and reel -115 -135
PESD5V0S1BL SOD882 4 mm pitch, 8 mm tape and reel - -315
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 13 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
10. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0S1BA_BB_BL_4 20090820 Product data sheet - PESD5V0S1BA_BB_BL_3
Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3 “Pinning”: amended
Figure 9 “Package outline SOD323 (SC-76)”: updated
Figure 10 “Package outline SOD523 (SC-79)”: updated
PESD5V0S1BA_BB_BL_3 20041217 Product data sheet - PESD5V0S1BA_BB_BL_2
PESD5V0S1BA_BB_BL_2 20040802 Product data sheet - PESD5V0S1BA_1
PESD5V0S1BB_1
PESD5V0S1BA_1 20040322 Product specification - -
PESD5V0S1BB_1 20040304 Product specification - -
PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 14 of 15
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 August 2009
Document identifier: PESD5V0S1BA_BB_BL_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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