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BC807(W), BC327 Datasheet

Nexperia USA Inc.

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Datasheet

1. Product profile
1.1 General description
PNP general-purpose transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
[1] Pulse test: tp 300 μs; δ 0.02.
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009 Product data sheet
Table 1. Product overview
Type number Package NPN complement
NXP JEITA
BC807 SOT23 - BC817
BC807W SOT323 SC-70 BC817W
BC327[1] SOT54 (TO-92) SC-43A BC337
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base;
IC=10mA --45 V
ICcollector current (DC) - - 500 mA
ICM peak collector current - - 1A
hFE DC current gain IC = 100 mA;
VCE =1V
[1]
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W; BC327-16 100 - 250
BC807-25; BC807-25W; BC327-25 160 - 400
BC807-40; BC807-40W; BC327-40 250 - 600
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 2 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT23
1base
2emitter
3 collector
SOT323
1base
2emitter
3 collector
SOT54
1emitter
2base
3 collector
SOT54A
1emitter
2base
3 collector
SOT54 variant
1emitter
2base
3 collector
12
3
sym01
3
3
2
1
3
12
sot323_s
o
sym01
3
3
2
1
001aab34
7
1
2
3
0
06aaa14
9
3
1
2
001aab34
8
1
2
3
0
06aaa14
9
3
1
2
001aab44
7
1
2
3
0
06aaa14
9
3
1
2
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 3 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
3. Ordering information
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering information
Type number[1] Package
Name Description Version
BC807 - plastic surface mounted package; 3 leads SOT23
BC807W SC-70 plastic surface mounted package; 3 leads SOT323
BC327[2] SC-43A plastic single-ended leaded (through hole) package;
3 leads SOT54
Table 5. Marking codes
Type number Marking code[1]
BC807 5D*
BC807-16 5A*
BC807-25 5B*
BC807-40 5C*
BC807W 5D*
BC807-16W 5A*
BC807-25W 5B*
BC807-40W 5C*
BC327 C327
BC327-16 C32716
BC327-25 C32725
BC327-40 C32740
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base;
IC=10mA -45 V
VEBO emitter-base voltage open collector - 5V
ICcollector current (DC) - 500 mA
ICM peak collector current - 1A
IBM peak base current - 200 mA
Ptot total power dissipation
BC807 Tamb 25 °C[1][2] - 250 mW
BC807W Tamb 25 °C[1][2] - 200 mW
BC327 Tamb 25 °C[1][2] - 625 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
BC807 Tamb 25 °C[1][2] --500K/W
BC807W Tamb 25 °C[1][2] --625K/W
BC327 Tamb 25 °C[1][2] --200K/W
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
[1] Pulse test: tp 300 μs; δ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
Tamb = 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA
IE = 0 A; VCB = 20 V;
Tj=150°C--5μA
IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA
hFE DC current gain IC = 100 mA; VCE = 1 V [1]
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W;
BC327-16 100 - 250
BC807-25; BC807-25W;
BC327-25 160 - 400
BC807-40; BC807-40W;
BC327-40 250 - 600
hFE DC current gain IC = 500 mA; VCE = 1 V [1] 40 - -
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 50 mA [1] --700 mV
VBE base-emitter voltage IC = 500 mA; VCE = 1 V [2] --1.2 V
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f=1MHz -5- pF
fTtransition frequency IC = 10 mA; VCE = 5 V;
f=100MHz 80 - - MHz
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 6 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 1. Selection -16: DC current gain as a function of
collector current; typical values Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 3. Selection -40: DC current gain as a function of collector current; typical values
006aaa119
200
100
300
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa120
400
200
600
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa121
400
200
600
800
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 7 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5. Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
006aaa122
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
006aaa123
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 8 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 7. Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Selection- 25: Collector-emitter saturation
voltage as a function of collector current;
typical values
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
006aaa125
IC (mA)
101103
102
110
101
1
VCEsat
(V)
102
(1)
(2)
(3)
006aaa126
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 9 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Tamb = 25 °C
(1) IB = 16.0 mA
(2) IB = 14.4 mA
(3) IB = 12.8 mA
(4) IB = 11.2 mA
(5) IB = 9.6 mA
(6) IB = 8.0 mA
(7) IB = 6.4 mA
(8) IB = 4.8 mA
(9) IB = 3.2 mA
(10) IB = 1.6 mA
Tamb = 25 °C
(1) IB = 13.0 mA
(2) IB = 11.7 mA
(3) IB = 10.4 mA
(4) IB = 9.1 mA
(5) IB = 7.8 mA
(6) IB = 6.5 mA
(7) IB = 5.2 mA
(8) IB = 3.9 mA
(9) IB = 2.6 mA
(10) IB = 1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
VCE (V)
054231
006aaa128
0.4
0.8
1.2
IC
(A)
0
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(1)(3) (2)
VCE (V)
054231
006aaa129
0.4
0.8
1.2
IC
(A)
0
(1)(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(2)
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 10 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
VCE (V)
054231
006aaa130
0.4
0.8
1.2
IC
(A)
0
(1)(2)
(3)(4)
(5)
(6)
(7)
(8)
(9)
(10)
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 11 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
8. Package outline
Fig 13. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2 0.95
e
1.9 2.5
2.1
0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 12 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Fig 14. Package outline SOT323 (SC-70)
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15 0.65
e
1.3 2.2
2.0
0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 13 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Fig 15. Package outline SOT54 (SC-43A/TO-92)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1
e
1
2
3
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 14 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Fig 16. Package outline SOT54A
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
3
2
e
5.08
e1L2
2.54
L1(1)
max.
3
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54A 97-05-13
04-06-28
AL
0 2.5 5 mm
scale
b
c
D
b1
L1
L2
d
E
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54
A
e1
e
1
2
3
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 15 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Fig 17. Package outline SOT54 variant
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 varia
nt
1
2
3
L2
e1
e
e1
04-06-28
05-01-10
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 16 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 5000 10000
BC807 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
BC807W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
BC327 SOT54 bulk, straight leads - -412 -
BC327 SOT54A tape and reel, wide pitch - - -116
BC327 SOT54A tape ammopack, wide pitch - - -126
BC327 SOT 54 variant bulk, delta pinning (on-circle) - -112 -
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 17 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC807_BC807W_
BC327_6 20091117 Product data sheet - BC807_BC807W_
BC327_5
Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3 Pinning: updated
Figure 13 Package outline SOT23 (TO-236AB): updated
Figure 14 Package outline SOT323 (SC-70): updated
BC807_BC807W_
BC327_5 20050221 Product data sheet CPCN200302007F
CPCN200405006F BC807_4; BC807W_3;
BC327_3
BC807_4 20040116 Product specification - BC807_3
BC807W_3 19990518 Product specification - BC807W_808W_CNV_2
BC327_3 19990415 Product specification - BC327_2
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 18 of 19
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 November 2009
Document identifier: BC807_BC807W_BC327_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information . . . . . . . . . . . . . . . . . . . . 16
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12 Contact information. . . . . . . . . . . . . . . . . . . . . 18
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Products

TRANS PNP 45V 0.5A SOT23
Available Quantity138437
Unit Price0.21
TRANS PNP 45V 0.5A SOT23
Available Quantity57676
Unit Price0.21
TRANS PNP 45V 0.5A SOT23
Available Quantity14839
Unit Price0.21
TRANS PNP 45V 0.5A SOT23
Available Quantity24230
Unit Price0.21
TRANS PNP 45V 0.5A SOT23
Available Quantity18090
Unit Price0.21
TRANS PNP 45V 0.5A SOT323
Available Quantity113506
Unit Price0.26
TRANS PNP 45V 0.5A SOT323
Available Quantity17008
Unit Price0.26
TRANS PNP 45V 0.5A SOT323
Available Quantity5232
Unit Price0.26
TRANS PNP 45V 0.5A SOT323
Available Quantity13753
Unit Price0.24