E Series Power MOSFETs - Vishay/Siliconix

	E Series Power MOSFETs

600 V and 650 V N-Channel E Series Power MOSFETs from Vishay/Siliconix

Vishay/Siliconix's E Series Power MOSFETs

Vishay/Siliconix announces a series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on-resistance and a wide range of current ratings. Based on Vishay’s next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.

Featuring Super Junction Technology, Vishay’s E Series of 600 V and 650 V n-channel power MOSFETs achieve high levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 64 mΩ to 190 mΩ at 10 V, which is 30% lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely low conduction losses to save energy in high-power, high-performance switch mode applications. Available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D²PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.

Features

Low gate charge and gate charge times on-resistance FOM
Wide range of current ratings from 22 A to 47 A
E Series Super Junction Technology
- Reduces on-resistance by 30% compared to previous-generation devices for increased efficiency and power density
- Lower input capacitance
Increased switching speeds
Offered in TO-220, TO-220 FullPAK, TO-247, and TO-263 (D²PAK) packages
Withstand high energy pulse in the avalanche and commutation mode
Compliant to RoHS Directive 2002/95/EC
Ultra-low maximum on resistance from 64 mΩ to 190 mΩ at 10 V
- Saves energy in high-power, high-performance switch mode applications
Avalanche (UIS) rated for reliable operation

Digi-Key P/N	Manufacturer P/N	Description
SIHU7N60E-GE3-ND	SIHU7N60E-GE3	MOSFET N CH 600V 7A TO-251
SIHD7N60E-GE3-ND	SIHD7N60E-GE3	MOSFET N CH 600V 7A TO-252
SIHB15N60E-GE3-ND	SIHB15N60E-GE3	MOSFET N CH 600V 15A DPAK
SIHB33N60E-GE3-ND	SIHB33N60E-GE3	MOSFET N CH 600V 33A TO-263
SIHP30N60E-E3-ND	SIHP30N60E-E3	MOSFET N-CH 600V 29A TO220AB
SIHG30N60E-E3-ND	SIHG30N60E-E3	MOSFET N-CH 600V 29A TO247AC
SIHF30N60E-E3-ND	SIHF30N60E-E3	MOSFET N-CH 600V 29A TO220
SIHG24N65E-E3-ND	SIHG24N65E-E3	MOSFET N-CH 650V 24A TO247AC
SIHP24N65E-E3-ND	SIHP24N65E-E3	MOSFET N-CH 650V 24A TO220AB
SIHB24N65E-E3-ND	SIHB24N65E-E3	MOSFET N-CH 650V 24A D2PAK
SIHP12N60E-E3-ND	SIHP12N60E-E3	MOSFET N-CH 600V 12A TO220AB
SIHF12N60E-E3-ND	SIHF12N60E-E3	MOSFET N-CH 600V 12A TO220 FULLP
SIHP15N60E-E3-ND	SIHP15N60E-E3	MOSFET N-CH 600V 15A TO220AB
SIHG73N60E-GE3CT-ND	SIHG73N60E-GE3	MOSF N CH 600V 73A E TO247AC
SIHP22N60E-E3-ND	SIHP22N60E-E3	MOSFET N-CH 600V 21A TO220AB
SIHF15N60E-E3-ND	SIHF15N60E-E3	MOSFET N-CH 600V 15A TO220 FULLP
SIHB30N60E-GE3-ND	SIHB30N60E-GE3	MOSFET N-CH 600V 29A D2PAK
SIHB12N60E-GE3-ND	SIHB12N60E-GE3	MOSFET N CH 600V 12A TO263
SIHP7N60E-GE3-ND	SIHP7N60E-GE3	MOSFET N CH 600V 7A TO-220AB
SIHF7N60E-E3-ND	SIHF7N60E-E3	MOSFET N CH 600V 7A TO-220
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