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Product Overview
Digi-Key Part Number IRLD110PBF-ND
Quantity Available 5,756
Can ship immediately
Manufacturer

Manufacturer Part Number

IRLD110PBF

Description MOSFET N-CH 100V 1A 4-DIP
Expanded Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 9 Weeks
Documents & Media
Datasheets IRLD110
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1308 (CA2011 PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 100
Other Names *IRLD110PBF

17:05:27 2/25/2017

Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.18000 1.18
10 1.04900 10.49
25 0.99600 24.90
100 0.81800 81.80
250 0.76464 191.16
500 0.67574 337.87
1,000 0.53348 533.48
2,500 0.49791 1,244.78
5,000 0.47302 2,365.09

Submit a request for quotation on quantities greater than those displayed.

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