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Product Overview
Digi-Key Part Number IRFBE30PBF-ND
Quantity Available 8,520
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFBE30PBF

Description MOSFET N-CH 800V 4.1A TO-220AB
Expanded Description N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRFBE30PBF

08:42:21 2/23/2017

Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 2.15000 2.15
10 1.93000 19.30
25 1.82120 45.53
100 1.55130 155.13
250 1.45660 364.15
500 1.27454 637.27
1,000 1.05605 1,056.05
2,500 0.98322 2,458.04
5,000 0.94680 4,734.01

Submit a request for quotation on quantities greater than those displayed.

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