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Product Overview
Digi-Key Part Number IXTP3N120-ND
Quantity Available 418
Can ship immediately
Manufacturer

Manufacturer Part Number

IXTP3N120

Description MOSFET N-CH 1.2KV 3A TO-220AB
Expanded Description N-Channel 1200V (1.2kV) 3A (Tc) 200W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Manufacturer Standard Lead Time 4 Weeks
Documents & Media
Datasheets IXT(A,P)3N120
Catalog Page 1406 (CA2011 PDF)
Product Attributes Select All
Categories
Manufacturer

IXYS

Series HiPerFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50

02:42:37 2/20/2017

Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 9.01000 9.01
10 8.04100 80.41
25 7.23720 180.93
100 6.59370 659.37
250 5.95048 1,487.62
500 5.33932 2,669.66
1,000 4.50304 4,503.04
2,500 4.27789 10,694.73

Submit a request for quotation on quantities greater than those displayed.

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