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Product Overview
Digi-Key Part Number IXTH6N100D2-ND
Quantity Available 330
Can ship immediately
Manufacturer

Manufacturer Part Number

IXTH6N100D2

Description MOSFET N-CH 1000V 6A TO247
Expanded Description N-Channel 1000V (1kV) 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Documents & Media
Datasheets IXT(A,P,H)6N100D2
Featured Product Depletion-Mode D2™ Power MOSFETs
Catalog Page 1407 (CA2011 PDF)
Product Attributes Select All
Categories
Manufacturer

IXYS

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
Vgs (Max) ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 3A, 0V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
 
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Additional Resources
Standard Package ? 30

00:38:08 2/24/2017

Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 8.93000 8.93
10 8.03400 80.34
25 7.32000 183.00
100 6.60580 660.58
250 6.07020 1,517.55
500 5.53458 2,767.29
1,000 4.82044 4,820.44
2,500 4.64190 11,604.76

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