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Product Overview
Digi-Key Part Number IRF630NPBF-ND
Quantity Available 2,838
Can ship immediately
Manufacturer

Manufacturer Part Number

IRF630NPBF

Description MOSFET N-CH 200V 9.3A TO-220AB
Expanded Description N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
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Categories
Manufacturer

Infineon Technologies

Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 82W (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.4A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRF630NPBF
SP001564792

15:16:44 3/25/2017

Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.87000 1.87
10 1.67100 16.71
100 1.30290 130.29
500 1.07632 538.16
1,000 0.84972 849.72

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